GB1483868A - Storage cell made of insulated gate field effect transistors - Google Patents
Storage cell made of insulated gate field effect transistorsInfo
- Publication number
- GB1483868A GB1483868A GB5039275A GB5039275A GB1483868A GB 1483868 A GB1483868 A GB 1483868A GB 5039275 A GB5039275 A GB 5039275A GB 5039275 A GB5039275 A GB 5039275A GB 1483868 A GB1483868 A GB 1483868A
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistors
- insulated gate
- storage cell
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742459023 DE2459023C3 (de) | 1974-12-13 | 1974-12-13 | Integrierbare, aus Isolierschicht-Feldeffekttransistoren gleicher Leitungsund Steuerungsart aufgebaute statische Schreib/Lesespeicherzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1483868A true GB1483868A (en) | 1977-08-24 |
Family
ID=5933342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5039275A Expired GB1483868A (en) | 1974-12-13 | 1975-12-09 | Storage cell made of insulated gate field effect transistors |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5183742A (fr) |
| DE (1) | DE2459023C3 (fr) |
| FR (1) | FR2294514A1 (fr) |
| GB (1) | GB1483868A (fr) |
| IT (1) | IT1050037B (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2663147A1 (fr) * | 1990-06-12 | 1991-12-13 | Sgs Thomson Microelectronics | Memoire programmable a double transistor a grille flottante. |
| FR2703502B1 (fr) * | 1993-04-02 | 1995-06-16 | Matra Mhs | Cellule memoire statique de type mos. |
-
1974
- 1974-12-13 DE DE19742459023 patent/DE2459023C3/de not_active Expired
-
1975
- 1975-12-09 GB GB5039275A patent/GB1483868A/en not_active Expired
- 1975-12-10 IT IT3012975A patent/IT1050037B/it active
- 1975-12-11 FR FR7537895A patent/FR2294514A1/fr not_active Withdrawn
- 1975-12-13 JP JP50147944A patent/JPS5183742A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2294514A1 (fr) | 1976-07-09 |
| DE2459023A1 (de) | 1976-06-16 |
| DE2459023B2 (de) | 1979-01-18 |
| JPS5183742A (en) | 1976-07-22 |
| DE2459023C3 (de) | 1979-09-13 |
| IT1050037B (it) | 1981-03-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |