IT1050037B - Cella di memorizzazione fatta di transistor ad effetto di campo a porta isolata - Google Patents
Cella di memorizzazione fatta di transistor ad effetto di campo a porta isolataInfo
- Publication number
- IT1050037B IT1050037B IT3012975A IT3012975A IT1050037B IT 1050037 B IT1050037 B IT 1050037B IT 3012975 A IT3012975 A IT 3012975A IT 3012975 A IT3012975 A IT 3012975A IT 1050037 B IT1050037 B IT 1050037B
- Authority
- IT
- Italy
- Prior art keywords
- field
- effect transistor
- storage cell
- cell made
- isolated door
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742459023 DE2459023C3 (de) | 1974-12-13 | 1974-12-13 | Integrierbare, aus Isolierschicht-Feldeffekttransistoren gleicher Leitungsund Steuerungsart aufgebaute statische Schreib/Lesespeicherzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1050037B true IT1050037B (it) | 1981-03-10 |
Family
ID=5933342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT3012975A IT1050037B (it) | 1974-12-13 | 1975-12-10 | Cella di memorizzazione fatta di transistor ad effetto di campo a porta isolata |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5183742A (it) |
| DE (1) | DE2459023C3 (it) |
| FR (1) | FR2294514A1 (it) |
| GB (1) | GB1483868A (it) |
| IT (1) | IT1050037B (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2663147A1 (fr) * | 1990-06-12 | 1991-12-13 | Sgs Thomson Microelectronics | Memoire programmable a double transistor a grille flottante. |
| FR2703502B1 (fr) * | 1993-04-02 | 1995-06-16 | Matra Mhs | Cellule memoire statique de type mos. |
-
1974
- 1974-12-13 DE DE19742459023 patent/DE2459023C3/de not_active Expired
-
1975
- 1975-12-09 GB GB5039275A patent/GB1483868A/en not_active Expired
- 1975-12-10 IT IT3012975A patent/IT1050037B/it active
- 1975-12-11 FR FR7537895A patent/FR2294514A1/fr not_active Withdrawn
- 1975-12-13 JP JP50147944A patent/JPS5183742A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2294514A1 (fr) | 1976-07-09 |
| DE2459023A1 (de) | 1976-06-16 |
| GB1483868A (en) | 1977-08-24 |
| DE2459023B2 (de) | 1979-01-18 |
| JPS5183742A (en) | 1976-07-22 |
| DE2459023C3 (de) | 1979-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT1034492B (it) | Transistore ad effetto di campo a porta isolata | |
| IT1044369B (it) | Transistore ad effetto di campo a porta isolata e metodo di fabbricazione dello stesso | |
| IT941940B (it) | Transistore di memoria ad effetto di campo a porta isolat | |
| ATA407675A (de) | Hierarchische speicheranordnung | |
| IT1076036B (it) | Transistore a effetto di campo con canale di superficie | |
| IT1058321B (it) | Transistore complementare ad effetto di campo | |
| IT1077520B (it) | Trasistore a effetto di campo con molto piccola lunghezza di canale | |
| IT1032952B (it) | Procedimento per la fabbricazione di una struttura complementare di transistore ad effetto di campo a soglia isolata | |
| IT1042692B (it) | Cella di memoria perfzionata | |
| IT1065293B (it) | Registro a scorrimento dinamico usante transistori ad effetto di campo a porta isolata | |
| IT1022436B (it) | Cella di memoria perfezionata | |
| IT1044690B (it) | Dispositivo con due transistori a effetto di campo complementari | |
| SE406136B (sv) | Mis-felteffekttransistordon | |
| IT1039147B (it) | Memoria associativa perfezionata | |
| SE7511384L (sv) | Gastett tillsluten alkalisk ackumulator | |
| DK141388C (da) | Associativ lagercelle | |
| IT990432B (it) | Circuito bistabile che utilizza transistor con effetto di campo a griglia isolata | |
| IT1112216B (it) | Transistore ad effetto di campo,a porta isolata,presentante una struttura di porta,di tipo chiuso,con caratteristiche di rottura a valanga controllate | |
| AR192882A1 (es) | Peliculas termoplasticas con carga | |
| IT1001109B (it) | Cella di memorizzazione realizzata con dispositivi semiconduttori | |
| SE7506947L (sv) | Farmakologiskt aktiva foreningar | |
| IT1039663B (it) | Accumulatore con elettrodi ad avvolgimento | |
| IT1193240B (it) | Transistore a effetto di campo a porta isolata | |
| SE7603695L (sv) | Minnescell med sjelvlekande kondensator | |
| IT1056928B (it) | Cella di memoria |