Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
  • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
  • B01J13/0004—Preparation of sols
  • B01J13/0047—Preparation of sols containing a metal oxide
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
  • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
  • B01J13/0004—Preparation of sols
  • B01J13/0026—Preparation of sols containing a liquid organic phase
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
  • G11B7/0045—Recording
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
  • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
  • G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
  • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
  • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
  • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
  • G11B2007/24302—Metals or metalloids
  • G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
  • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
  • G11B2007/24302—Metals or metalloids
  • G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
  • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
  • G11B2007/24302—Metals or metalloids
  • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)

Definitions

• nanoparticles refers to ultrafine particles whose average particle size ranges from 1 nm to 20 nm.
• Optical recording materials have been gaining in density and sensitivity.
• Laser light having a wavelength of 600 nm or longer has been employed for optical recording and reproduction, and optical recording media have conventionally been designed to exhibit their optimal performance within this wavelength region.
• reduction of light wavelength to one-nth brings an information recording density multiplied by n 2 . Therefore it has been keenly demanded to realize high-density recording with a short wavelength laser of about 400 nm.
• the demands for further increases in density and sensitivity of recording media have been increasing.
• ultrafine particles of semiconductors such as Ge or Si
• This technique aims at multiple-wavelength recording by making use of difference in quantum size effect of ultrafine particles having different sizes in order to improve recording density without relying on reduction of laser wavelength or increase of numerical aperture (NA). It is therefore fundamentally different from the present invention which takes advantage of total phase change of nanoparticles of uniform size in an energy irradiated area.
• JP-A-10-261244 discloses an optical recording medium comprising a substrate having a fine uneven pattern on its surface and a recording layer formed on the patterned substrate by sputtering, in which the recording layer comprises a chalcogen compound having dispersed therein fine metal particles or fine noble metal particles or the recording layer comprises a dielectric material having dispersed therein composite fine particles of a noble metal and a chalcogen compound.
• the technique requires a complicated production process and has poor practicability.
• thin film formation by sputtering while having the merits of a dry process and allowing freedom of film composition designing, meets difficulties in controlling the particle size, particle size distribution and structure of the formed particles and dispersing the particles in a binder or a dielectric medium as compared with the particles formed by a colloid process.
• Such difficulties lead to difficulty in improving distinguishability between recorded areas and non-recorded areas, down-sizing of the recordable area, and stability of the recording material.
• JP-A-12-54012 A technique of forming magnetic nanocrystals of a metal, an intermetallic compound or an alloy by a reduction process is taught in JP-A-12-54012, which is not relevant to the present invention contemplating preparation of a metal chalcogenide.
• a thin film of a material included under the scope of the present invention can be formed by CVD as well as sputtering and reduction as noted above.
• CVD chemical vapor deposition
• formation of an AgInTe 2 thin film by CVD is disclosed in JP-A-3-82593.
• the proposed process requires a substrate to be kept at or above 100°C. Such a high temperature is hardly applicable to a substrate of polymers such as polycarbonate resins. It is an additional problem that the film formation by CVD takes times.
• JP-A-3-231890 proposes firing after spraying or spin coating to make a recording layer comprising an InCuSe 2 alloy, which cannot be seen as practical in view of accuracy in production and heat resistance of a substrate.
• an object of the present invention is to provide an optical recording medium which is capable of recording, reproducing or erasing information with a laser beam of 600 nm or shorter wavelength thereby to achieve a high density and which has a recording layer formed by applying colloidal nanoparticles by spin coating or web coating and thereby accomplishing an increased density and an heightened sensitivity.
• the nanoparticles which can be used in the invention have an average particle size of 1 to 20 nm, preferably 1 to 10 nm, still preferably 1 to 5 nm. Particles greater than 20 nm have an increased melting point to be slow in phase change.
• the lower limit of the particle size is selected according to the practical performance requirements such as weatherability. It is preferred that the nanoparticles be mono-dispersed particles for securing distinguishability between recorded areas and non-recorded areas.
• the "mono-dispersed" particles preferably have a particle size distribution with a coefficient of variation of 30% or smaller, still preferably 20% or smaller, particularly preferably 10% or less.
• adsorbable compound denotes a compound having a group capable of being adsorbed.
• Effective adsorbable compounds include alkylphosphine oxides, alkylphosphines, and compounds containing -SH, -CN, -NH 2 , -SO 2 OH, -SOOH, -OPO(OH) 2 or -COOH, with alkylphosphine oxides and -SH-containing compounds being preferred.
• the alkyl group in the alkylphosphine oxides and alkylphosphines is preferably a trioctyl group or a tributyl group.
• a thin film formed by aggregation of such surface-modified (i.e., dispersed) fine particles can never be obtained by sputtering or vacuum deposition techniques.
• the nanoparticle colloid is applied to a substrate by spin coating or web coating. Compared with dry processes, such wet coating realizes reduction in initial investment and production cost.
• the metal chalcogenides which can be used in the present invention comprise (A) at least one element selected from the group consisting of the elements of the groups 8, 1B and 2B and the elements of the 4th to 6th periods of the groups 3B, 4B and 5B and (B) at least one element selected from the group 6B elements.
• metal chalcogenides are GeSbTe, AgInSbTe, GeTe, Ag 2 Te, AgInTe 2 , AgSbTe 2 , CuInSe 2 , CuInTe 2 , AgSbTe, InSbTe, GeTeS, GeSeS, GeSeSb, GeAsSe, InTe, SeTe, SeAs, GeTeAu, GeTeSeSb, GeTeSnAu, GeTePb, and GeTeSbS.
• GeSbTe, AgInSbTe, GeTe, Ag 2 Te, AgInTe 2 , AgSbTe 2 , CuInSe 2 or CuInTe 2 is preferred.
• the atomic ratios in the above chemical formulae are represented by integers, they may be deviated from integer ratios so as to modify the recording characteristics, preservability, strength, and the like as desired.
• the metal chalcogenide nanoparticles can be synthesized by adding precursor solutions separating containing the element (A) and the element (B) (i.e., a chalcogen) in the form of ultrafine particles of a simple substance or its salt in an alkylphosphine, etc. to a high-boiling organic solvent, such as an alkylphosphine oxide, and allowing the precursors to react at a temperature ranging from 100°C to 350°C.
• precursor as used herein means a reactive substance containing the element which is necessary to form the metal chalcogenide. In the reaction, a precursor containing the element (s) (A) and a precursor containing the element(s) (B) are used.
• precursor-forming organic matter indicates organic substances used to form the precursors, such as organic solvents.
• the alkylphosphine includes symmetric tertiary phosphines, such as tributylphosphine, trioctylphosphine, and triphenylphosphine; asymmetric phosphines, such as dimethylbutylphosphine and dimethyloctylphosphine; and mixtures thereof. Preferred of them are tributylphosphine (TBP) and trioctylphosphine (TOP). These alkylphosphines may have appropriate functional groups (of which the examples are those described below with respect to hydrocarbons solvents).
• the high-boiling organic solvents include alkylphosphine oxides, straight-chain or branched hydrocarbons (usually having 8 to 22 carbon atoms) or fluorocarbons having a functional group modifying the surface of the nanoparticles (e.g., -SH, -SO 2 OH, -SOOH, -PO(OH) 2 , -COOH).
• alkylphosphine oxides include tributylphosphine oxide, trioctylphosphine oxide (TOPO), and dibutyloctylphosphine oxide, with TOPO being the most preferred.
• the reaction between the solution of a precursor containing the element(s) (A) and the solution of a precursor containing the element(s) (B) in the above-specified temperature range (100 to 350°C) is preferably carried out in an inert gas atmosphere.
• the total number of moles of the elements (B) is preferably 0.001% to 0.5%, still preferably 0.005% to 0.2%, based on the weight of the high-boiling organic solvent. If the reaction temperature is lower than 100°C, or if the element (B) concentration is lower than 0.001%, the reaction has a very low rate in particle formation or tends to fail to form nanoparticles. At higher temperatures or in higher concentrations, coarse particles tend to be formed, or the formed particles tend to aggregate, resulting in a failure to re-disperse.
• the nanoparticles thus formed in the reaction mixture are precipitated and flocculated by addition of a flocculant.
• Methanol or ethanol is usually added as a flocculant.
• the supernatant liquor is removed by decantation, and the resulting nanoparticles are re-dispersed in a solvent, such as an aprotic hydrocarbon (e.g., n-hexane).
• aprotic hydrocarbon e.g., n-hexane.
• the surface modifier for the nanoparticles can be added to the preparation system in any stage of from nanoparticle formation up to purification of the particles .
• the nanoparticles be crystalline. In most cases, the above-described reaction system provides fine crystals. This is of extreme significance for reducing the number of steps involved and the cost incurred in the production of optical recording media, as is recognized from the fact that JP-A-8-221814 proposes an optical recording material which is formed into a film by sputtering and calls for no initialization (crystallization). Where the nanoparticles obtained have insufficient crystallinity, they can be initialized with a bulk laser as is well known in the art.
• the optical recording medium of the invention which is of rewritable type preferably comprises a substrate having thereon a first dielectric protective layer, the recording layer, and a second dielectric protective layer in this order. According to necessity, it can have a reflective layer and a protective layer. Where the recording medium is of the type in which a write beam or a read beam is incident upon the substrate side, it is preferred to provide on the substrate the first dielectric protective layer, the recording layer, the second dielectric protective layer, the reflective layer, and the protective layer in the order described. An intermediate layer may be provided between the substrate and the first dielectric layer, between the dielectric layer and the recording layer, between the second dielectric layer and the reflective layer, or between the reflective layer and the protective layer.
• the recording medium is of the type in which a write beam and a read beam are incident on the side opposite to the substrate
• An intermediate layer may be provided between the substrate and the reflective layer, between the reflective layer and the first dielectric layer, between the dielectric layer and the recording layer, or between the second dielectric layer and the protective layer.
• the intermediate layer may be provided in one or more of the above-described positions.
• Each of the layers constituting the recording medium may have a multilayer structure.
• the thickness of the recording layer can range from 5 to 300 nm, usually from 5 to 200 nm, preferably from 5 to 100 nm, still preferably from 5 to 50 nm.
• the recording layer can contain non-decomposing organic binders, such as fluorine-containing polymers or silicone polymers, or nanoparticles of dielectric substances, such as ZnS, SiO 2 , and TiO 2 , to improve the physical strength or durability to repetition of recording and reproduction.
• the dielectric protective layer comprises at least one dielectric, such as ZnS, SiO 2 , TiO 2 , Al 2 O 3 , AlN, SiC, silicon nitride, MgF 2 , CaF 2 , LiF 2 , SiO, Si 3 N 4 , ZnO, MgO, CeO, SiC, ZrO, ZrO 2 , Nb 2 O 5 , SnO 2 , In 2 O 3 , TiN, BN, ZrN, In 2 S 3 , TaS 4 , TaC, B 4 C, WC, TiC, and ZrC.
• dielectric such as ZnS, SiO 2 , TiO 2 , Al 2 O 3 , AlN, SiC, silicon nitride, MgF 2 , CaF 2 , LiF 2 , SiO, Si 3 N 4 , ZnO, MgO, CeO, SiC, ZrO, ZrO 2 , Nb 2 O 5 , SnO 2
• the first and the second dielectric protective layers each preferably have a thickness of 10 to 200 nm. Where a write beam and a read beam are incident on the substrate side, the first dielectric protective layer and the second dielectric protective layer preferably have a thickness of 30 to 150 nm and 10 to 100 nm, respectively. Where a write beam and a read beam are incident on the opposite side, the first dielectric protective layer and the second dielectric protective layer preferably have a thickness of 10 to 100 nm and 30 to 150 nm, respectively.
• the reflective layer can be made of a singlemetal substance having a high reflectance, such as Au, Ag, Al, Pt or Cu, or an alloy comprising one or more of these metals. Ag, Al or an Ag-or Al-based alloy are preferred.
• the thickness of the reflective layer is preferably 30 to 300 nm, still preferably 50 to 200 nm.
• the material used to form the reflective layer or the dielectric layers can also be formed into a nanoparticle colloid dispersion, which is applied by coating.
• the protective layer which is provided on the reflective layer is made of inorganic substances, such as SiO, SiO 2 , MgF 2 , SnO 2 , and Si 3 N 4 , or organic substances, such as thermoplastic resins, thermosetting resins, and ultraviolet (UV)-curing resins, preferably resins.
• a heat-insulating protective layer can be provided between the recording layer and the reflective layer.
• the protective layer can be formed by superposing a film, for example, an extruded plastic film, on the reflective layer and/or the substrate via an adhesive layer or by applying a protective material by, for example, vacuum evaporation, sputtering or coating.
• a protective material for example, vacuum evaporation, sputtering or coating.
• the protective layer can also be formed by applying a resin solution in an appropriate solvent followed by drying to remove the solvent.
• a UV-curing resin it is applied as such or as dissolved in an appropriate solvent followed by UV irradiation to form a cured resin protective layer.
• the coating composition for the protective layer may contain various additives such as antistatic agents, antioxidants and UV absorbers.
• the protective layer preferably has a thickness of 0.1 to 100 ⁇ m, particularly 1 to 50 ⁇ m, especially 2 to 20 ⁇ m. Where the beams are incident on the opposite side, the protective layer preferably has a thickness of 1 to 300 ⁇ m, particularly 10 to 200 ⁇ m, especially 50 to 150 ⁇ m.
• a pair of the thus obtained recording disks composed of the substrate having thereon the recording layer and the dielectric layers and, if desired, the reflective layer, the protective layer, etc. can be joined together via an adhesive, etc. with their recording layers inside to give an optical recording medium having two recording layers.
• the above-obtained recording disk can be joined with a protective disk of the same size via an adhesive, etc. with the recording layer inside to prepare an optical recording disk having a recording layer on one side thereof.
• the joining can be effected with a UV-curing resin useful as the protective layer or any synthetic adhesive.
• a double-sided adhesive tape is also effective.
• the adhesive layer usually has a thickness of 0.1 to 100 ⁇ m, preferably 5 to 80 ⁇ m.
• optical recording medium according to the invention is also useful as a write once type optically recording medium. Any structure of conventional write once recording media can be adopted, in which the nanoparticles of the invention are used in the recording layer.
• hydrophilic printable surface layer As disclosed, e.g., in JP-A-7-169700 and JP-A-10-162438.
• a hydrophilic surface layer can be provided on the optical recordingmedium of the invention.
• the hydrophilic surface layer is formed of a layer comprising a UV-curing resin as a binder having dispersed therein particles of hydrophilic organic polymers, such as protein particles.
• high-density recording can be accomplished by using a laser beam having a wavelength selected from a range of 200 nm to 600 nm, preferably a wavelength of 500 nm or shorter, particularly preferably 430 nm or shorter. That is, a blue-purple laser and a laser beam modulated with a second harmonic generation (SHG) element to have shorter wavelengths can be used for writing and reading.
• SHG second harmonic generation
• Te was dissolved in TOP to prepare a 1M solution (hereinafter Te-TOP).
• AgCl was dissolved in purified TOP to prepare a 1M solution (hereinafter Ag-TOP).
• the resulting nanoparticles had an average particle size of 8 nm, and the coefficient of size variation was as astonishingly small as 5%.
• C-1a 0.5 g/cc dispersion
• In-TOP 1M solution
• TOPO a 1M solution
• 67 cc of In-TOP and 100 cc of Te-TOP were added thereto while vigorously stirring. The vigorous stirring was further continued for about 1 hour.
• the resulting nanoparticles had an average particle size of 6 nm with a variation coefficient of 7%.
• the particles were purified in the same manner as in Example 1. After drying, the particles were dispersed in n-hexane to prepare a 0.5 g/cc dispersion (hereinafter C-2a).
• CuCl and an equimolar amount of InCl 3 were dissolved in TOP to prepare a solution containing CuCl and InCl 3 in respective concentrations of 5M (hereinafter CuIn-TOP).
• CuIn-TOP a solution containing CuCl and InCl 3 in respective concentrations of 5M
• 100 g of TOPO was melted by heating to 150°C, and 100 cc of CuIn-TOP and 100 cc of Te-TOP were added thereto while vigorously stirring.
• the resulting nanoparticles had an average particle size of 12 nm, and the coefficient of size variation was 10%.
• the particles were purified in the same manner as in Example 1.
• the particles were dispersed in n-hexane to prepare a 0.5 g/cc dispersion (hereinafter C-3a).
• C-3a 0.5 g/cc dispersion
• Each of the dispersions C-1a to -3c was applied by spin coating to a polycarbonate disk having a diameter of 120 mm and a thickness of 0.6. mm to form a recording layer having a thickness of 100 nm.
• An amorphous fluorine-containing resin layer (Cytop, available from Asahi Glass Co., Ltd.) was applied by spin coating to the recording layer to a thickness of 200 nm to prepare samples 1 to 9.
• the recording layer a part of which was crystalline after film formation, was irradiated with laser light of 4 to 10 mW to sufficiently crystallize to present an initialized state (unrecorded state).
• samples 10 to 12 were prepared by forming an Ag 2 Te, AgInTe 2 or CuInTe 2 recording layer whose composition was equivalent to C-1a to -1c, C-2a to -2c, and C-1 to -3c, respectively by sputtering on the same polycarbonate substrate as used above, and coating the recording layer with the same amorphous fluorine-containing resin as used above by spin coating to a thickness of 200 nm.
• the recording layers of samples 10 to 12, which were amorphous, were initialized in the same manner as for samples 1 to 9.
• the recording characteristics of the samples were evaluated as follows by use of an optical disk testing drive DDU1000, supplied by Pulstec Industrial Co., Ltd. Test signals having a frequency of 4.35 MHz were recorded by irradiating the substrate side of the disk with a laser beam having a wavelength of 405 nm by using an optical pickup having a numerical aperture (NA) of 0.6 at a linear velocity of 3.5 m/sec and a duty ratio of 33%.
• NA numerical aperture
• the recording power was stepwise increased by 1 mW up to 12 mW.
• the recorded signals were reproduced to obtain the output at which the degree of modulation reached the maximum.
• the degree of modulation is a quotient obtained by dividing the amplitude of a recorded area by the signal intensity of a non-recorded area.
• Samples 13 to 18 were prepared by building up the following layers on a 0.6 mm thick polycarbonate disk in the order listed.
• the recording layer was formed by applying each of the colloidal dispersions C-2a to -2c and C-3a to -3c by spin coating.
• the first dielectric layer, the second dielectric layer and the reflective layer were formed by sputtering.
• the UV-cured layer was formed by spin-coating the reflective layer with a UV-curing resin and irradiating the coating film by UV light.
• Layer structure material and thickness:
• samples 19 and 20 were prepared in the same manner, except that the recording layer comprising AgInTe 2 or CuInTe 2 was formed by sputtering.
• the recorded signals were reproduced with a read beam having a power of 0.7 mW.
• the write laser power (P w ) at which the C/N ratio was saturated or reached the maximum, the optimum power for erasion (P E ), and the erasability are shown in Table 2 below.
• the present invention has accomplished high-density recording with short wavelength laser light of 600 nm or less that could not be effected without difficulty.
• the invention provides a rewritable optical recording medium having a recording layer comprising nanoparticles and thereby exhibiting extremely improved sensitivity.

Landscapes

• Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Optics & Photonics (AREA)
• Dispersion Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Nanotechnology (AREA)
• Crystallography & Structural Chemistry (AREA)
• Theoretical Computer Science (AREA)
• Mathematical Physics (AREA)
• Manufacturing & Machinery (AREA)
• Inorganic Chemistry (AREA)
• Optical Record Carriers And Manufacture Thereof (AREA)
• Thermal Transfer Or Thermal Recording In General (AREA)
• Optical Recording Or Reproduction (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=18672093

Family Applications (1)

Country Status (4)

Cited By (2)

Families Citing this family (9)

Citations (2)

Family Cites Families (7)

• 2000
  • 2000-06-06 JP JP2000169202A patent/JP2001347756A/ja active Pending
• 2001
  • 2001-05-28 TW TW090112784A patent/TW522396B/zh not_active IP Right Cessation
  • 2001-06-05 EP EP01113746A patent/EP1162612A3/de not_active Withdrawn
  • 2001-06-06 US US09/874,313 patent/US20020006580A1/en not_active Abandoned

Patent Citations (2)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events