DE69939916D1 - Verfahren zum Herstellen von Folien-Elektroden - Google Patents

Verfahren zum Herstellen von Folien-Elektroden

Info

Publication number
DE69939916D1
DE69939916D1 DE69939916T DE69939916T DE69939916D1 DE 69939916 D1 DE69939916 D1 DE 69939916D1 DE 69939916 T DE69939916 T DE 69939916T DE 69939916 T DE69939916 T DE 69939916T DE 69939916 D1 DE69939916 D1 DE 69939916D1
Authority
DE
Germany
Prior art keywords
foil electrodes
producing foil
producing
electrodes
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939916T
Other languages
English (en)
Inventor
Dina Katzir
Iris Tartakovsky
Israel Tartakovsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Acktar Ltd
Original Assignee
Acktar Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acktar Ltd filed Critical Acktar Ltd
Application granted granted Critical
Publication of DE69939916D1 publication Critical patent/DE69939916D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
DE69939916T 1998-03-03 1999-02-11 Verfahren zum Herstellen von Folien-Elektroden Expired - Lifetime DE69939916D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/033,664 US6287673B1 (en) 1998-03-03 1998-03-03 Method for producing high surface area foil electrodes

Publications (1)

Publication Number Publication Date
DE69939916D1 true DE69939916D1 (de) 2009-01-02

Family

ID=21871724

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939916T Expired - Lifetime DE69939916D1 (de) 1998-03-03 1999-02-11 Verfahren zum Herstellen von Folien-Elektroden

Country Status (5)

Country Link
US (3) US6287673B1 (de)
EP (1) EP0940828B1 (de)
JP (1) JP3746627B2 (de)
DE (1) DE69939916D1 (de)
IL (1) IL128430A (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL141592A (en) * 2001-02-22 2007-02-11 Zvi Finkelstein Electrolytic capacitors and method for making them
US6287673B1 (en) * 1998-03-03 2001-09-11 Acktar Ltd. Method for producing high surface area foil electrodes
JP3329380B2 (ja) * 1999-09-21 2002-09-30 日本電気株式会社 半導体装置およびその製造方法
DE10005124C2 (de) * 2000-02-07 2002-03-28 Becromal Spa Elektrode sowie Verfahren zu ihrer Herstellung
US7066234B2 (en) 2001-04-25 2006-06-27 Alcove Surfaces Gmbh Stamping tool, casting mold and methods for structuring a surface of a work piece
US6660660B2 (en) * 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US6844203B2 (en) * 2001-08-30 2005-01-18 Micron Technology, Inc. Gate oxides, and methods of forming
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6803151B2 (en) * 2002-02-21 2004-10-12 Delphi Technologies, Inc. Electrode
US7323422B2 (en) * 2002-03-05 2008-01-29 Asm International N.V. Dielectric layers and methods of forming the same
US6812100B2 (en) * 2002-03-13 2004-11-02 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-k dielectrics
JP4367838B2 (ja) * 2002-03-25 2009-11-18 堀金属表面処理工業株式会社 導電性陽極酸化皮膜を表面に有するマグネシウム又はマグネシウム合金製品及びその製造方法
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
IL153289A (en) * 2002-12-05 2010-06-16 Acktar Ltd Electrodes for electrolytic capacitors and method for producing them
JP4414663B2 (ja) * 2003-03-03 2010-02-10 財団法人国際科学振興財団 液晶ディスプレイバックライトユニット用可視光反射部材と可視光反射部材の製造方法
US7049192B2 (en) 2003-06-24 2006-05-23 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectrics
US7029971B2 (en) * 2003-07-17 2006-04-18 E. I. Du Pont De Nemours And Company Thin film dielectrics for capacitors and methods of making thereof
IL161606A0 (en) * 2004-04-25 2004-09-27 Acktar Ltd Integral separator for electrolytic capacitors
US7715174B1 (en) 2004-05-17 2010-05-11 Pacesetter, Inc. Electrolytic capacitors with alternate cathode materials for use in pulse discharge applications
GB2418628B (en) * 2004-10-01 2006-12-13 Acktar Ltd Improved laminates and the manufacture thereof
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP4882458B2 (ja) * 2005-09-30 2012-02-22 日本ケミコン株式会社 電解コンデンサ
JP4984031B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ用電極材
JP4797754B2 (ja) * 2005-09-30 2011-10-19 日本ケミコン株式会社 電解コンデンサ用電極材
JP4983074B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ
JP4983073B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ
JP4983072B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ
JP4984030B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ用電極材
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
IL173121A (en) * 2006-01-12 2011-07-31 Dina Katsir Electrodes, membranes, printing plate precursors and other articles including multi-strata porous coatings
JP2007273912A (ja) * 2006-03-31 2007-10-18 Nippon Chemicon Corp 電解コンデンサ
EP2009653A4 (de) 2006-03-31 2015-08-12 Nippon Chemicon Elektrodenmaterial für einen elektrolytkondensator
IL175270A0 (en) * 2006-04-26 2006-09-05 Acktar Ltd Composite inorganic membrane for separation in fluid systems
JP2008010490A (ja) * 2006-06-27 2008-01-17 Nichicon Corp 電解コンデンサ用電極の製造方法
JP2008258232A (ja) * 2007-03-31 2008-10-23 Nippon Chemicon Corp 電解コンデンサ用電極材
JP4992522B2 (ja) * 2007-04-05 2012-08-08 パナソニック株式会社 コンデンサ用電極箔及びそれを用いたコンデンサ
DE102007055844A1 (de) 2007-12-17 2009-06-25 Wacker Chemie Ag Vernetzbare Siliconbeschichtungszusammensetzungen
JP5016472B2 (ja) * 2007-12-19 2012-09-05 ニチコン株式会社 電解コンデンサ用電極箔の製造方法
JP2009164412A (ja) 2008-01-08 2009-07-23 Kobe Steel Ltd 多孔質金属薄膜およびその製造方法、ならびにコンデンサ
DE202008015506U1 (de) 2008-01-17 2009-02-19 Vostock Ltd. Mehrschichtige Anode
JP4978509B2 (ja) * 2008-02-22 2012-07-18 富士通株式会社 電極箔の製造方法
EP2100988B1 (de) 2008-03-12 2019-06-12 Acktar Ltd. Dünn geschichtete Struktur
WO2010029598A1 (ja) * 2008-09-11 2010-03-18 パナソニック株式会社 コンデンサ用電極箔とそれを用いた電解コンデンサ、およびコンデンサ用電極箔の製造方法
CN102150227B (zh) * 2008-10-10 2013-05-15 松下电器产业株式会社 电容器用电极箔及其制造方法和使用该电极箔的固体电解电容器
EP2377970B1 (de) * 2008-12-26 2013-02-13 Sharp Kabushiki Kaisha Verfahren zur herstellung einer form und verfahren zur herstellung eines antireflexionsfilms unter verwendung der form
KR101677101B1 (ko) 2009-03-23 2016-11-17 도요 알루미늄 가부시키가이샤 전극 구조체, 콘덴서, 전지 및 전극 구조체의 제조 방법
WO2011043059A1 (ja) 2009-10-09 2011-04-14 パナソニック株式会社 電極箔およびこれを用いたコンデンサ
WO2011125721A1 (ja) 2010-04-07 2011-10-13 東洋アルミニウム株式会社 電極構造体の製造方法、電極構造体およびコンデンサ
JP5692726B2 (ja) * 2010-08-31 2015-04-01 国立大学法人 鹿児島大学 アルミニウム薄膜の製造方法
ITMI20110089A1 (it) 2011-01-26 2012-07-27 Industrie De Nora Spa Elettrodo per evoluzione di ossigeno in processi elettrochimici industriali
DE102011116939A1 (de) * 2011-10-26 2013-05-02 H.C. Starck Gmbh Verzugsfreie schablonengedruckte Anoden auf Ta-/Nb-Blech
JP6297065B2 (ja) * 2013-01-31 2018-03-20 ディーナ カツィール 低蛍光器具
ITUB20159439A1 (it) * 2015-12-21 2017-06-21 Industrie De Nora Spa Rivestimento anticorrosivo e metodo per il suo ottenimento
CN106910635A (zh) * 2017-02-24 2017-06-30 中国科学院合肥物质科学研究院 一种用于钽电容器的有序孔阵列阳极钽箔及其制备方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011383A (en) 1957-04-30 1961-12-05 Carpenter L E Co Decorative optical material
US3443933A (en) 1964-06-11 1969-05-13 Leesona Corp Method of preparing metal blacks
FR2004645A1 (de) * 1968-03-25 1969-11-28 Matsushita Electric Ind Co Ltd
US3781610A (en) * 1972-05-22 1973-12-25 G Bodway Thin film circuits and method for manufacture
JPS5195858A (en) 1975-01-14 1976-08-23 ****** *** *ku***chi*se*ku*******ka*****************chi***ne********
JPS5271976A (en) * 1975-12-11 1977-06-15 Nec Corp Semiconductor device
US4138262A (en) 1976-09-20 1979-02-06 Energy Conversion Devices, Inc. Imaging film comprising bismuth image-forming layer
US4287449A (en) 1978-02-03 1981-09-01 Sharp Kabushiki Kaisha Light-absorption film for rear electrodes of electroluminescent display panel
JPS5573865A (en) 1978-11-21 1980-06-03 Fuji Photo Film Co Ltd Manufacture of vapor deposition coating
GB2056501A (en) 1979-08-09 1981-03-18 Standard Telephones Cables Ltd Porous metal films
GB2056503B (en) * 1979-08-09 1983-12-07 Standard Telephones Cables Ltd Porous metal films
DE3009533C2 (de) 1980-03-12 1986-11-06 D. Swarovski & Co., Wattens, Tirol Belag mit mittlerem Brechwert, Verfahren zu dessen Herstellung und Verwendung des Belages
US4455506A (en) 1981-05-11 1984-06-19 Gte Products Corporation Contrast enhanced electroluminescent device
US4822718A (en) 1982-09-30 1989-04-18 Brewer Science, Inc. Light absorbing coating
US4547702A (en) 1983-10-11 1985-10-15 Gte Products Corporation Thin film electroluminscent display device
US4602189A (en) 1983-10-13 1986-07-22 Sigmatron Nova, Inc. Light sink layer for a thin-film EL display panel
CA1197088A (en) 1983-10-17 1985-11-26 Jerzy A. Dobrowolski Vapour deposition regulating apparatus
US4634639A (en) 1984-04-30 1987-01-06 Hoya Corporation Electroluminescent panel having a light absorption layer of germanium oxide
US4537665A (en) 1984-09-04 1985-08-27 Sprague Electric Company Production of aluminum foil capacitor electrodes
US4672264A (en) 1985-01-08 1987-06-09 Phosphor Products Company Limited High contrast electroluminescent display panels
JPS61284092A (ja) 1985-06-07 1986-12-15 アルプス電気株式会社 薄膜ｅｌ表示素子
JPS6231922A (ja) * 1985-08-02 1987-02-10 Ise Electronics Corp 螢光光源管
US4582574A (en) 1985-08-15 1986-04-15 Sprague Electric Company Preparation of capacitor electrodes
US4670690A (en) 1985-10-23 1987-06-02 Rockwell International Corporation Thin film electrolumenescent display panel
US4870322A (en) 1986-04-15 1989-09-26 Hoya Corporation Electroluminescent panel having a layer of germanium nitride between an electroluminescent layer and a back electrode
EP0272926B1 (de) * 1986-12-24 1991-10-16 Showa Aluminum Kabushiki Kaisha Eine Aluminium-Kondensatorelektrode für elektrolytische Kondensatoren und Verfahren zu ihrer Herstellung
DE3852026T2 (de) 1987-07-30 1995-03-30 Matsushita Electric Ind Co Ltd Verfahren zur herstellung eines elektrolytischen kondensators.
US4857361A (en) 1988-04-18 1989-08-15 Ppg Industries, Inc. Haze-free infrared-reflecting coated glass
US4886591A (en) 1988-08-04 1989-12-12 Universite De Sherbrooke Phosphate bonded composite electrodes
EP0394475B1 (de) 1988-09-28 1998-11-18 Toray Industries, Inc. Aluminium-vakuumverdämpfungsfilm und verfahren zur herstellung
JPH0359930A (ja) 1989-07-27 1991-03-14 Toshiba Corp カラー受像管
KR910008076B1 (ko) 1989-09-07 1991-10-07 삼성전관 주식회사 전자발광소자의 제조방법
JPH059710A (ja) * 1991-07-02 1993-01-19 Nippon Chemicon Corp 電解コンデンサ用アルミニウム電極の製造方法
DE4207368A1 (de) 1991-08-06 1993-02-11 Biotronik Mess & Therapieg Stimmulationselektrode
DE4127743C2 (de) 1991-08-22 1994-05-11 Fraunhofer Ges Forschung Oberflächenvergrößerte Aluminiumfolie für Elektrolytkondensatoren und Vakuum-Beschichtungsverfahren zu deren Herstellung
DE4204193A1 (de) * 1992-02-10 1993-08-12 Vita Valve Medizintechnik Gmbh Verfahren zur herstellung eines elektrolytkondensators
FR2688092B1 (fr) 1992-02-14 1994-04-15 Traitement Metaux Alliages Sa Feuille pour electrode de condensateur electrolytique et procede de fabrication.
DE4208811A1 (de) 1992-03-19 1993-09-23 Merck Patent Gmbh Aufdampfmaterial zur herstellung hochbrechender optischer schichten
DE4209910A1 (de) 1992-03-26 1993-09-30 Char Kovskij Politekhn I Im V Verfahren zur Herstellung einer Aluminiumfolie für Elektroden eines oxidisch-elektrolytischen Kondensators, Folie zur Fertigung von Elektroden eines elektrolytischen Kondensators und elektrolytischer Kondensator
US5548474A (en) * 1994-03-01 1996-08-20 Avx Corporation Electrical components such as capacitors having electrodes with an insulating edge
US5576240A (en) * 1994-12-09 1996-11-19 Lucent Technologies Inc. Method for making a metal to metal capacitor
DE19525143A1 (de) 1995-07-11 1997-01-16 Biotronik Mess & Therapieg Elektrolytkondensator, insbesondere Tantal-Elektrolytkondensator
US5643432A (en) 1995-07-13 1997-07-01 Avx Corporation Selective anodization of capacitor anode body
KR0175017B1 (ko) * 1995-10-23 1999-04-01 윤종용 알루미나 형성장치 및 알루미나 마스크를 이용한 식각 방법
WO1997037052A1 (fr) * 1996-04-03 1997-10-09 Zakrytoe Aktsionernoe Obschestvo 'skb 'istra' Procede et dispositif de deposition de revetement poreux et feuille cathodique de condensateur electrolytique
US6084285A (en) * 1997-10-20 2000-07-04 The Board Of Trustees Of The Leland Stanford Junior University Lateral flux capacitor having fractal-shaped perimeters
US6287673B1 (en) * 1998-03-03 2001-09-11 Acktar Ltd. Method for producing high surface area foil electrodes

Also Published As

Publication number Publication date
EP0940828A3 (de) 2001-08-16
US20010051442A1 (en) 2001-12-13
IL128430A (en) 2004-09-27
US6764712B2 (en) 2004-07-20
US20010006735A1 (en) 2001-07-05
EP0940828A2 (de) 1999-09-08
JPH11317331A (ja) 1999-11-16
US6933041B2 (en) 2005-08-23
IL128430A0 (en) 2000-01-31
US6287673B1 (en) 2001-09-11
JP3746627B2 (ja) 2006-02-15
EP0940828B1 (de) 2008-11-19

Similar Documents

Publication Publication Date Title
DE69939916D1 (de) Verfahren zum Herstellen von Folien-Elektroden
DE59912169D1 (de) Verfahren zum Herstellen von Druckprodukten
DE69722961D1 (de) Verfahren zum herstellen von individuell angepassten medizinischen vorrichtungen
DE59914036D1 (de) Verfahren zum gesteuerten parallelbetrieb von gleichspannnungswandlern
DE60031174D1 (de) Verfahren zum herstellen von gebogenen thermoplastischen rohren
DE69627642D1 (de) Verfahren zum herstellen von pflasterungen
DE69711416D1 (de) Verfahren zum herstellen von aethylacetat
DE60007039D1 (de) Verfahren zum Herstellen von Schrauben
DE69926436D1 (de) Verfahren zum Entfernen von Leukozyten
DE69923278D1 (de) Verfahren zum herstellen von zusammenhängenden beuteln
DE69521530D1 (de) Verbessertes verfahren zum herstellen von verbundwerkstoffen
DE69916295D1 (de) Verfahren zum kontinuierlichen herstellen von carbonatestern
ATE222828T1 (de) Verfahren zum herstellen von sägebändern
DE59813943D1 (de) Verfahren zum Herstellen von elektronischen Elementen
DE59914127D1 (de) Verfahren zum herstellen von halbleiterbauelementen
DE69809455T2 (de) Verfahren zum herstellen von prägewalzen
DE69940478D1 (de) Verfahren zum herstellen von flüssigkeitsbeuteln
ATA66195A (de) Verfahren zum herstellen von gehäusen
DE50004185D1 (de) Verfahren zum herstellen von (zigaretten-)packungen
DE69919017D1 (de) Verfahren zum herstellen von photopolymerisierbaren halofluorierten acrylaten
DE50105330D1 (de) Verfahren zum herstellen von flachbandkabeln
DE69504476T2 (de) Verfahren zum herstellen von polyflouroxetanen
DE60027779D1 (de) Verfahren zum herstellen von konischen wickeln fadenförmigen gutes
DE69817572D1 (de) Verfahren zum herstellen von synthesegummi
DE59911952D1 (de) Verfahren zum herstellen von induktiven bauelementen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition