DE69614609T2 - Verfahren zur Herstellung eines Einkristalles - Google Patents

Verfahren zur Herstellung eines Einkristalles

Info

Publication number
DE69614609T2
DE69614609T2 DE69614609T DE69614609T DE69614609T2 DE 69614609 T2 DE69614609 T2 DE 69614609T2 DE 69614609 T DE69614609 T DE 69614609T DE 69614609 T DE69614609 T DE 69614609T DE 69614609 T2 DE69614609 T2 DE 69614609T2
Authority
DE
Germany
Prior art keywords
production
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69614609T
Other languages
English (en)
Other versions
DE69614609D1 (de
Inventor
Eiichi Iino
Kiyotaka Takano
Masanori Kimura
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69614609D1 publication Critical patent/DE69614609D1/de
Application granted granted Critical
Publication of DE69614609T2 publication Critical patent/DE69614609T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69614609T 1995-06-01 1996-06-03 Verfahren zur Herstellung eines Einkristalles Expired - Lifetime DE69614609T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7158454A JP2940437B2 (ja) 1995-06-01 1995-06-01 単結晶の製造方法及び装置

Publications (2)

Publication Number Publication Date
DE69614609D1 DE69614609D1 (de) 2001-09-27
DE69614609T2 true DE69614609T2 (de) 2002-07-04

Family

ID=15672109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69614609T Expired - Lifetime DE69614609T2 (de) 1995-06-01 1996-06-03 Verfahren zur Herstellung eines Einkristalles

Country Status (5)

Country Link
US (2) US5792255A (de)
EP (1) EP0745706B1 (de)
JP (1) JP2940437B2 (de)
KR (1) KR100239864B1 (de)
DE (1) DE69614609T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2940437B2 (ja) * 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JP3520883B2 (ja) * 1995-12-29 2004-04-19 信越半導体株式会社 単結晶の製造方法
JPH10297994A (ja) * 1997-04-25 1998-11-10 Sumitomo Sitix Corp シリコン単結晶育成方法
JP2992988B2 (ja) * 1997-11-06 1999-12-20 日本電気株式会社 シリコン単結晶育成方法
DE19753477A1 (de) * 1997-12-02 1999-06-10 Wacker Siltronic Halbleitermat Verfahren und Heizvorrichtung zum Aufschmelzen von Halbleitermaterial
JP2000247788A (ja) * 1999-02-26 2000-09-12 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
DE60041429D1 (de) * 1999-03-17 2009-03-12 Shinetsu Handotai Kk Verfahren zur herstellung von silicium einkristallen
JP4358380B2 (ja) * 1999-09-28 2009-11-04 住友重機械工業株式会社 磁界中熱処理装置
JP4193558B2 (ja) * 2003-04-16 2008-12-10 信越半導体株式会社 単結晶の製造方法
JP4432458B2 (ja) * 2003-10-30 2010-03-17 信越半導体株式会社 単結晶の製造方法
JP4501507B2 (ja) * 2004-04-06 2010-07-14 株式会社Ｓｕｍｃｏ シリコン単結晶育成方法
US8147611B2 (en) * 2005-07-13 2012-04-03 Shin-Etsu Handotai Co., Ltd. Method of manufacturing single crystal
KR100840751B1 (ko) * 2005-07-26 2008-06-24 주식회사 실트론 고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼
KR100793950B1 (ko) * 2005-07-27 2008-01-16 주식회사 실트론 실리콘 단결정 잉곳 및 그 성장방법
KR100831044B1 (ko) * 2005-09-21 2008-05-21 주식회사 실트론 고품질 실리콘 단결정 잉곳의 성장장치, 그 장치를 이용한성장방법
JP2007210865A (ja) * 2006-02-13 2007-08-23 Sumco Corp シリコン単結晶引上装置
US8152921B2 (en) 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
JP4919343B2 (ja) * 2007-02-06 2012-04-18 コバレントマテリアル株式会社 単結晶引上装置
WO2008146371A1 (ja) 2007-05-30 2008-12-04 Sumco Corporation シリコン単結晶引上装置
JP4829176B2 (ja) * 2007-06-08 2011-12-07 シルトロニック・ジャパン株式会社 単結晶の製造方法
KR100906284B1 (ko) * 2007-11-02 2009-07-06 주식회사 실트론 산소농도 특성이 개선된 반도체 단결정의 제조방법
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
JP5304206B2 (ja) 2008-12-04 2013-10-02 信越半導体株式会社 単結晶の製造方法および単結晶の製造装置
JP5131170B2 (ja) * 2008-12-05 2013-01-30 信越半導体株式会社 単結晶製造用上部ヒーターおよび単結晶製造装置ならびに単結晶製造方法
EP2270264B1 (de) * 2009-05-13 2011-12-28 Siltronic AG Verfahren und Vorrichtung zur Züchtung eines Siliciumeinzelkristalls durch Schmelzung
KR101729515B1 (ko) 2015-04-14 2017-04-24 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
KR102060422B1 (ko) 2015-11-02 2019-12-30 가부시키가이샤 사무코 단결정 실리콘의 제조 방법
CN110129883A (zh) * 2018-03-30 2019-08-16 杭州慧翔电液技术开发有限公司 一种用于磁控直拉单晶的磁体结构及磁控直拉单晶的方法
JP6610816B1 (ja) 2019-02-18 2019-11-27 信越半導体株式会社 シリコン単結晶引上装置
CN116926656B (zh) * 2023-08-02 2023-12-26 鸿新新能源科技(云南)有限公司 一种内置磁场装置的光伏半导体单晶炉

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3245051C2 (de) * 1982-12-06 1986-09-25 Alkem Gmbh, 6450 Hanau Verfahren zum Herstellen von PuO↓2↓-haltigen Kristallen
JPS6027682A (ja) * 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
US4565671A (en) 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
ATE55424T1 (de) * 1984-09-04 1990-08-15 Forschungszentrum Juelich Gmbh Verfahren zur herstellung eines kristallinen koerpers aus der schmelze.
JPS61222984A (ja) * 1985-03-28 1986-10-03 Toshiba Corp 単結晶の製造装置
GB8805478D0 (en) * 1988-03-08 1988-04-07 Secr Defence Method & apparatus for growing semi-conductor crystalline materials
JP2940437B2 (ja) * 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JP2716023B2 (ja) * 1995-11-22 1998-02-18 日本電気株式会社 シリコン単結晶育成装置

Also Published As

Publication number Publication date
US5980630A (en) 1999-11-09
DE69614609D1 (de) 2001-09-27
KR100239864B1 (ko) 2000-01-15
US5792255A (en) 1998-08-11
JP2940437B2 (ja) 1999-08-25
JPH08333191A (ja) 1996-12-17
KR970001604A (ko) 1997-01-24
EP0745706A1 (de) 1996-12-04
EP0745706B1 (de) 2001-08-22

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