DE69120326D1 - Verfahren zur Herstellung eines Siliziumeinkristalles - Google Patents

Verfahren zur Herstellung eines Siliziumeinkristalles

Info

Publication number
DE69120326D1
DE69120326D1 DE69120326T DE69120326T DE69120326D1 DE 69120326 D1 DE69120326 D1 DE 69120326D1 DE 69120326 T DE69120326 T DE 69120326T DE 69120326 T DE69120326 T DE 69120326T DE 69120326 D1 DE69120326 D1 DE 69120326D1
Authority
DE
Germany
Prior art keywords
production
single crystal
silicon single
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120326T
Other languages
English (en)
Other versions
DE69120326T2 (de
Inventor
Kyojiro Kaneko
Hideyuki Mizumoto
Teruoki Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Titanium Technologies Co Ltd
Original Assignee
Sumitomo Sitix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Sitix Corp filed Critical Sumitomo Sitix Corp
Application granted granted Critical
Publication of DE69120326D1 publication Critical patent/DE69120326D1/de
Publication of DE69120326T2 publication Critical patent/DE69120326T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S423/00—Chemistry of inorganic compounds
    • Y10S423/09—Reaction techniques
    • Y10S423/16—Fluidization

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69120326T 1990-03-30 1991-03-27 Verfahren zur Herstellung eines Siliziumeinkristalles Expired - Fee Related DE69120326T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8519390 1990-03-30

Publications (2)

Publication Number Publication Date
DE69120326D1 true DE69120326D1 (de) 1996-07-25
DE69120326T2 DE69120326T2 (de) 1996-12-12

Family

ID=13851815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120326T Expired - Fee Related DE69120326T2 (de) 1990-03-30 1991-03-27 Verfahren zur Herstellung eines Siliziumeinkristalles

Country Status (3)

Country Link
US (1) US5211802A (de)
EP (1) EP0450494B1 (de)
DE (1) DE69120326T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268063A (en) * 1990-04-27 1993-12-07 Sumitomo Sitix Co., Ltd. Method of manufacturing single-crystal silicon
JP3053958B2 (ja) * 1992-04-10 2000-06-19 光弘 丸山 浮遊帯溶融法による結晶の製造装置
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
JP2922078B2 (ja) * 1993-03-17 1999-07-19 株式会社トクヤマ シリコンロッドの製造方法
JPH0873297A (ja) * 1994-09-05 1996-03-19 Shin Etsu Chem Co Ltd 太陽電池用基板材料の製法とこれを用いた太陽電池
DE19520175A1 (de) * 1995-06-01 1996-12-12 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe
US5810934A (en) 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
DE19607098C2 (de) * 1996-02-24 1999-06-17 Ald Vacuum Techn Gmbh Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
JPH11169704A (ja) * 1997-12-12 1999-06-29 Sharp Corp 粒子改質方法および粒子改質装置
DE10204178B4 (de) * 2002-02-01 2008-01-03 Siltronic Ag Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
EP1974077A2 (de) 2006-01-20 2008-10-01 BP Corporation North America Inc. Verfahren und vorrichtungen zur herstellung von monokristallin-formsilicium und monokristallin-formsiliciumkörper für die fotovoltaik
JP5141020B2 (ja) * 2007-01-16 2013-02-13 株式会社Ｓｕｍｃｏ 多結晶シリコンの鋳造方法
CN101796226A (zh) * 2007-07-20 2010-08-04 Bp北美公司 由籽晶制造铸造硅的方法
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
WO2009015168A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing geometric multi-crystalline cast materials
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
CN102272047B (zh) * 2009-02-04 2013-07-31 株式会社德山 多晶硅的制造方法
CA2779659C (en) 2009-11-20 2020-05-05 Kyojiro Kaneko Silicon electromagnetic casting apparatus
US20130044779A1 (en) 2011-08-16 2013-02-21 Raytheon Company Method for tailoring the dopant profile in a laser crystal using zone processing
CN104169475B (zh) * 2012-03-26 2018-01-12 胜高股份有限公司 多晶硅及其铸造方法
DE102012213506A1 (de) * 2012-07-31 2014-02-06 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium
JP6629886B2 (ja) 2016-06-29 2020-01-15 株式会社クリスタルシステム 単結晶製造装置
EP3299498B1 (de) * 2016-07-28 2020-02-19 Crystal Systems Corporation Einkristallzüchtungsvorrichtung
US11326270B2 (en) 2018-03-29 2022-05-10 Crystal Systems Corporation Single-crystal production equipment and single-crystal production method
CN113008622B (zh) * 2021-03-09 2022-07-26 亚洲硅业(青海)股份有限公司 一种颗粒硅区熔检测采样装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal
GB898872A (en) * 1959-08-14 1962-06-14 Ici Ltd Improvements in the manufacture of crystalline silicon
BE759175A (nl) * 1969-11-21 1971-05-19 Philips Nv Werkwijze voor de bereiding van calcieteenkristallen
US4325777A (en) * 1980-08-14 1982-04-20 Olin Corporation Method and apparatus for reforming an improved strip of material from a starter strip of material
DE3220340A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
US5006317A (en) * 1990-05-18 1991-04-09 Commtech Development Partners Ii Process for producing crystalline silicon ingot in a fluidized bed reactor

Also Published As

Publication number Publication date
DE69120326T2 (de) 1996-12-12
US5211802A (en) 1993-05-18
EP0450494A1 (de) 1991-10-09
EP0450494B1 (de) 1996-06-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SUMITOMO SITIX OF AMAGASAKI, INC., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee