DE69600127T2 - Für Technologie und Temperatur kompensierte Spannungsdetektionsschaltung - Google Patents
Für Technologie und Temperatur kompensierte SpannungsdetektionsschaltungInfo
- Publication number
- DE69600127T2 DE69600127T2 DE69600127T DE69600127T DE69600127T2 DE 69600127 T2 DE69600127 T2 DE 69600127T2 DE 69600127 T DE69600127 T DE 69600127T DE 69600127 T DE69600127 T DE 69600127T DE 69600127 T2 DE69600127 T2 DE 69600127T2
- Authority
- DE
- Germany
- Prior art keywords
- technology
- temperature
- detection circuit
- voltage detection
- circuit compensated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
- G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
- G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Nonlinear Science (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measurement Of Current Or Voltage (AREA)
- Control Of Voltage And Current In General (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9500862A FR2729762A1 (fr) | 1995-01-23 | 1995-01-23 | Circuit de detection de tension compense en technologie et en temperature |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69600127D1 DE69600127D1 (de) | 1998-02-05 |
DE69600127T2 true DE69600127T2 (de) | 1998-04-16 |
Family
ID=9475500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69600127T Expired - Fee Related DE69600127T2 (de) | 1995-01-23 | 1996-01-17 | Für Technologie und Temperatur kompensierte Spannungsdetektionsschaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5708420A (de) |
EP (1) | EP0723160B1 (de) |
JP (1) | JP2885312B2 (de) |
DE (1) | DE69600127T2 (de) |
FR (1) | FR2729762A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004017284A1 (de) * | 2004-04-07 | 2005-10-27 | Infineon Technologies Ag | Integrierte Halbleiterschaltung und Verfahren zur Prüfung der integrierten Halbleiterschaltung |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3450629B2 (ja) * | 1997-02-26 | 2003-09-29 | 株式会社東芝 | 負電圧検知回路及び不揮発性半導体記憶装置 |
JP2000031756A (ja) * | 1998-07-14 | 2000-01-28 | Mitsubishi Electric Corp | カレントミラー回路及びチャージポンプ回路 |
TW544680B (en) * | 2000-08-04 | 2003-08-01 | Nec Electronics Corp | Timer circuit and semiconductor memory device integrated with the timer circuit |
JP3852906B2 (ja) * | 2000-11-06 | 2006-12-06 | 株式会社東芝 | 温度補償回路及び可変利得増幅回路 |
US20030197546A1 (en) * | 2001-07-09 | 2003-10-23 | Samsung Electronics Co., Ltd. | Negative voltage generator for a semiconductor memory device |
US7336121B2 (en) * | 2001-05-04 | 2008-02-26 | Samsung Electronics Co., Ltd. | Negative voltage generator for a semiconductor memory device |
FR2878986B1 (fr) * | 2004-12-08 | 2007-04-27 | Atmel Corp | Principe de regulation de puissance d'une sortie a haute tension dans des dispositifs de circuits integres |
EP1712973A3 (de) * | 2005-04-12 | 2007-03-07 | St Microelectronics S.A. | Stromkreis zur Erzeugung eines Bezugsstroms |
JP4562638B2 (ja) * | 2005-10-27 | 2010-10-13 | 三洋電機株式会社 | 低電圧検出回路 |
CN103134977B (zh) * | 2011-11-28 | 2015-08-19 | 统达能源股份有限公司 | 大电流侦测装置及其侦测方法 |
CN103853227B (zh) * | 2012-12-05 | 2016-02-17 | 艾尔瓦特集成电路科技(天津)有限公司 | 基准电压生成电路 |
CN103698578A (zh) * | 2013-12-26 | 2014-04-02 | 浙江华立科技有限公司 | 电力集抄***的功率输出控制方法及其电力集抄*** |
CN104198783B (zh) * | 2014-09-19 | 2017-08-25 | 杭州士兰微电子股份有限公司 | 具有温度补偿特性的电源检测电路及受电设备 |
CN104849536B (zh) * | 2015-06-11 | 2017-12-01 | 中国人民解放军国防科学技术大学 | 一种应用于可串联锂电池组保护芯片的检测电路 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3628070A (en) * | 1970-04-22 | 1971-12-14 | Rca Corp | Voltage reference and voltage level sensing circuit |
US4140930A (en) * | 1976-07-30 | 1979-02-20 | Sharp Kabushiki Kaisha | Voltage detection circuit composed of at least two MOS transistors |
JPS5326175A (en) * | 1976-08-23 | 1978-03-10 | Seiko Instr & Electronics Ltd | Electronic watch |
GB2020437B (en) * | 1978-04-14 | 1982-08-04 | Seiko Instr & Electronics | Voltage detecting circuit |
JPS5893606A (ja) * | 1981-11-27 | 1983-06-03 | Sumitomo Rubber Ind Ltd | 自動二輪車 |
JPS58190775A (ja) * | 1982-04-30 | 1983-11-07 | Fujitsu Ltd | 電源電圧検出回路 |
US4617473A (en) * | 1984-01-03 | 1986-10-14 | Intersil, Inc. | CMOS backup power switching circuit |
US4716323A (en) * | 1985-04-27 | 1987-12-29 | Kabushiki Kaisha Toshiba | Power voltage drop detecting circuit |
US4980792A (en) * | 1988-02-02 | 1990-12-25 | National Semiconductor Corporation | BiCMOS power transition circuit |
JPH03113613A (ja) * | 1989-09-28 | 1991-05-15 | Sumitomo Electric Ind Ltd | 広ダイナミックレンジ電流源回路 |
JP2778781B2 (ja) * | 1990-01-29 | 1998-07-23 | 三菱電機株式会社 | 閾値電圧生成回路 |
US5043652A (en) * | 1990-10-01 | 1991-08-27 | Motorola, Inc. | Differential voltage to differential current conversion circuit having linear output |
US5196833A (en) * | 1991-08-13 | 1993-03-23 | Ford Motor Company | Low voltage detector circuit |
-
1995
- 1995-01-23 FR FR9500862A patent/FR2729762A1/fr active Granted
-
1996
- 1996-01-17 EP EP96470001A patent/EP0723160B1/de not_active Expired - Lifetime
- 1996-01-17 DE DE69600127T patent/DE69600127T2/de not_active Expired - Fee Related
- 1996-01-22 US US08/589,220 patent/US5708420A/en not_active Expired - Lifetime
- 1996-01-23 JP JP8028669A patent/JP2885312B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004017284A1 (de) * | 2004-04-07 | 2005-10-27 | Infineon Technologies Ag | Integrierte Halbleiterschaltung und Verfahren zur Prüfung der integrierten Halbleiterschaltung |
DE102004017284B4 (de) * | 2004-04-07 | 2012-06-06 | Qimonda Ag | Integrierte Halbleiterschaltung und Verfahren zur Prüfung der integrierten Halbleiterschaltung |
Also Published As
Publication number | Publication date |
---|---|
JP2885312B2 (ja) | 1999-04-19 |
FR2729762B1 (de) | 1997-02-28 |
EP0723160A1 (de) | 1996-07-24 |
EP0723160B1 (de) | 1997-12-29 |
JPH08248067A (ja) | 1996-09-27 |
FR2729762A1 (fr) | 1996-07-26 |
DE69600127D1 (de) | 1998-02-05 |
US5708420A (en) | 1998-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |