DE69507343D1 - Reduzierung des gehaltes an metall-ionen einer lösung in pgmea von novolak-harzen mit einem chelatbildenden ionenaustausch-harz - Google Patents
Reduzierung des gehaltes an metall-ionen einer lösung in pgmea von novolak-harzen mit einem chelatbildenden ionenaustausch-harzInfo
- Publication number
- DE69507343D1 DE69507343D1 DE69507343T DE69507343T DE69507343D1 DE 69507343 D1 DE69507343 D1 DE 69507343D1 DE 69507343 T DE69507343 T DE 69507343T DE 69507343 T DE69507343 T DE 69507343T DE 69507343 D1 DE69507343 D1 DE 69507343D1
- Authority
- DE
- Germany
- Prior art keywords
- pgmea
- chelate
- reducing
- solution
- exchange resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/366,614 US5614352A (en) | 1994-12-30 | 1994-12-30 | Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin |
PCT/US1995/016685 WO1996020965A1 (en) | 1994-12-30 | 1995-12-21 | Metal ion reduction in novolak resins solution in pgmea |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69507343D1 true DE69507343D1 (de) | 1999-02-25 |
DE69507343T2 DE69507343T2 (de) | 1999-09-02 |
Family
ID=23443761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69507343T Expired - Fee Related DE69507343T2 (de) | 1994-12-30 | 1995-12-21 | Reduzierung des gehaltes an metall-ionen einer lösung in pgmea von novolak-harzen mit einem chelatbildenden ionenaustausch-harz |
Country Status (7)
Country | Link |
---|---|
US (1) | US5614352A (de) |
EP (1) | EP0805828B1 (de) |
JP (1) | JPH10512309A (de) |
KR (1) | KR100425427B1 (de) |
CN (1) | CN1074426C (de) |
DE (1) | DE69507343T2 (de) |
WO (1) | WO1996020965A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
US5830990A (en) * | 1992-07-10 | 1998-11-03 | Clariant Finance (Bvi) Limited | Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists |
US5837417A (en) * | 1994-12-30 | 1998-11-17 | Clariant Finance (Bvi) Limited | Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition |
US6029679A (en) * | 1995-09-07 | 2000-02-29 | Hitachi, Ltd. | Semiconductor cleaning and production methods using a film repulsing fine particle contaminants |
US5750031A (en) * | 1995-09-26 | 1998-05-12 | Clariant Finance (Bvi) Limited | Process for producing surfactant having a low metal ion level and developer produced therefrom |
US5656413A (en) * | 1995-09-28 | 1997-08-12 | Hoechst Celanese Corporation | Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom |
US5962183A (en) * | 1995-11-27 | 1999-10-05 | Clariant Finance (Bvi) Limited | Metal ion reduction in photoresist compositions by chelating ion exchange resin |
US5665517A (en) * | 1996-01-11 | 1997-09-09 | Hoechst Celanese Corporation | Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom |
CN1244930A (zh) * | 1996-12-17 | 2000-02-16 | 克拉里安特国际有限公司 | 通过离子交换法来减少含有机极性溶剂的抗光蚀剂组合物中的金属离子污染物的方法 |
US5936071A (en) * | 1998-02-02 | 1999-08-10 | Clariant Finance (Bvi) Limited | Process for making a photoactive compound and photoresist therefrom |
US6358672B2 (en) * | 1998-02-05 | 2002-03-19 | Samsung Electronics Co., Ltd. | Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist |
US5955570A (en) * | 1998-07-01 | 1999-09-21 | Clariant International Ltd. | Trace metal ion reduction by Ion Exchange Pack |
US6893958B2 (en) * | 2002-04-26 | 2005-05-17 | Micron Technology, Inc. | Methods for preventing cross-linking between multiple resists and patterning multiple resists |
US20040206702A1 (en) * | 2002-08-08 | 2004-10-21 | Davidson James M. | Use of an oxidizer to improve trace metals removal from photoresist and photoresist components |
JP5686217B1 (ja) * | 2014-04-30 | 2015-03-18 | 住友ベークライト株式会社 | 感光性樹脂材料および樹脂膜 |
CN107098810B (zh) * | 2017-05-16 | 2021-04-30 | 天津大学 | 一种制备电子级丙二醇甲醚醋酸酯的分离提纯方法 |
JP7236806B2 (ja) | 2018-01-09 | 2023-03-10 | スリーエム イノベイティブ プロパティズ カンパニー | フィルター、金属イオンの除去方法及び金属イオン除去装置 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929808A (en) * | 1956-04-04 | 1960-03-22 | Exxon Research Engineering Co | Removal of metal contaminants in polymerization processes |
US4033909A (en) * | 1974-08-13 | 1977-07-05 | Union Carbide Corporation | Stable phenolic resoles |
US4033910A (en) * | 1975-09-26 | 1977-07-05 | Union Carbide Corporation | Methyl formate as an adjuvant in phenolic foam formation |
GB1509354A (en) * | 1976-04-24 | 1978-05-04 | Maruzen Oil Co Ltd | Process for purifying halogenated alkenyl-phenol polymers |
US4250031A (en) * | 1977-03-01 | 1981-02-10 | Unitika Ltd. | Phenolic chelate resin and method of adsorption treatment |
US4195138A (en) * | 1978-06-26 | 1980-03-25 | The Dow Chemical Company | Chelate resins prepared from the cured reaction product of a polyalkylenepolyamine and epoxide |
JPS5884814A (ja) * | 1981-11-17 | 1983-05-21 | Dainippon Ink & Chem Inc | ノボラツク型フエノ−ル系樹脂の製造法 |
US4452883A (en) * | 1983-05-17 | 1984-06-05 | Minnesota Mining And Manufacturing Company | Barrier resin for photothermographic color separation |
US4584261A (en) * | 1984-07-27 | 1986-04-22 | E. I. Du Pont De Nemours And Company | Process for etching nonphotosensitive layer under washoff photopolymer layer |
US4567130A (en) * | 1984-07-27 | 1986-01-28 | E. I. Du Pont De Nemours And Company | Process for etching single photopolymer layer utilizing chemically soluble pigments |
JPH063549B2 (ja) * | 1984-12-25 | 1994-01-12 | 株式会社東芝 | ポジ型フォトレジスト現像液組成物 |
US4636540A (en) * | 1985-07-08 | 1987-01-13 | Atlantic Richfield Company | Purification of polymer solutions |
JPS6232453A (ja) * | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
US4784937A (en) * | 1985-08-06 | 1988-11-15 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant |
US4747954A (en) * | 1985-09-16 | 1988-05-31 | The Dow Chemical Company | Removal of metals from solutions |
US4721665A (en) * | 1986-09-29 | 1988-01-26 | Polychrome Corporation | Method for neutralizing acidic novolak resin in a lithographic coating composition |
JPS6472155A (en) * | 1987-09-12 | 1989-03-17 | Tama Kagaku Kogyo Kk | Developing solution for positive type photoresist |
GB8729510D0 (en) * | 1987-12-18 | 1988-02-03 | Ucb Sa | Photosensitive compositions containing phenolic resins & diazoquinone compounds |
JPH01228560A (ja) * | 1988-03-08 | 1989-09-12 | Hitachi Chem Co Ltd | 不純金属成分の低減された溶液の製造法 |
US5212044A (en) * | 1988-09-08 | 1993-05-18 | The Mead Corporation | Photoresist composition including polyphenol and sensitizer |
US5175078A (en) * | 1988-10-20 | 1992-12-29 | Mitsubishi Gas Chemical Company, Inc. | Positive type photoresist developer |
US5063135A (en) * | 1989-02-27 | 1991-11-05 | Fuji Photo Film Co., Ltd. | Color diffusion transfer photographic light-sensitive material |
JPH03128903A (ja) * | 1989-07-13 | 1991-05-31 | Fine Kurei:Kk | 合成樹脂の改質方法および改質合成樹脂 |
DE3923426A1 (de) * | 1989-07-15 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt |
JPH0465415A (ja) * | 1990-07-04 | 1992-03-02 | Hitachi Chem Co Ltd | 不純金属成分の低減されたノボラツク樹脂の製造法 |
US5446125A (en) * | 1991-04-01 | 1995-08-29 | Ocg Microelectronic Materials, Inc. | Method for removing metal impurities from resist components |
JPH05239166A (ja) * | 1991-08-22 | 1993-09-17 | Hoechst Celanese Corp | 高いガラス転位点と高い光感度を有するフォトレジスト用ノボラック樹脂組成物 |
JP2771075B2 (ja) * | 1991-09-03 | 1998-07-02 | オリン・マイクロエレクトロニツク・ケミカルズ・インコーポレイテツド | レジスト成分からの金属不純物除去方法 |
US5378802A (en) * | 1991-09-03 | 1995-01-03 | Ocg Microelectronic Materials, Inc. | Method for removing impurities from resist components and novolak resins |
JPH0768297B2 (ja) * | 1991-11-28 | 1995-07-26 | 丸善石油化学株式会社 | フォトレジスト用ビニルフェノール系重合体の精製方法 |
JPH0768296B2 (ja) * | 1991-11-28 | 1995-07-26 | 丸善石油化学株式会社 | ビニルフェノール系重合体の金属除去方法 |
JP3630422B2 (ja) * | 1991-12-18 | 2005-03-16 | クラリアント・ファイナンス・(ビーブイアイ)・リミテッド | ノボラック樹脂中の金属イオンの低減 |
JP3184530B2 (ja) * | 1992-03-06 | 2001-07-09 | クラリアント・ファイナンス・(ビーブイアイ)・リミテッド | 金属イオンレベルが低いフォトレジスト |
US5300628A (en) * | 1992-06-29 | 1994-04-05 | Ocg Microelectronic Materials, Inc. | Selected chelate resins and their use to remove multivalent metal impurities from resist components |
SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
EP0671025B1 (de) * | 1992-11-25 | 1997-08-13 | Hoechst Celanese Corporation | Metallionenreduzierung in antireflexunterschichten für photoresist |
US5286606A (en) * | 1992-12-29 | 1994-02-15 | Hoechst Celanese Corporation | Process for producing a developer having a low metal ion level |
WO1994014858A1 (en) * | 1992-12-29 | 1994-07-07 | Hoechst Celanese Corporation | Metal ion reduction in polyhydroxystyrene and photoresists |
US5476750A (en) * | 1992-12-29 | 1995-12-19 | Hoechst Celanese Corporation | Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists |
US5350714A (en) * | 1993-11-08 | 1994-09-27 | Shipley Company Inc. | Point-of-use purification |
-
1994
- 1994-12-30 US US08/366,614 patent/US5614352A/en not_active Expired - Fee Related
-
1995
- 1995-12-21 CN CN95197185A patent/CN1074426C/zh not_active Expired - Fee Related
- 1995-12-21 JP JP8521082A patent/JPH10512309A/ja not_active Ceased
- 1995-12-21 DE DE69507343T patent/DE69507343T2/de not_active Expired - Fee Related
- 1995-12-21 EP EP95943931A patent/EP0805828B1/de not_active Expired - Lifetime
- 1995-12-21 KR KR1019970704385A patent/KR100425427B1/ko not_active IP Right Cessation
- 1995-12-21 WO PCT/US1995/016685 patent/WO1996020965A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100425427B1 (ko) | 2004-09-13 |
EP0805828A1 (de) | 1997-11-12 |
CN1171799A (zh) | 1998-01-28 |
CN1074426C (zh) | 2001-11-07 |
EP0805828B1 (de) | 1999-01-13 |
DE69507343T2 (de) | 1999-09-02 |
JPH10512309A (ja) | 1998-11-24 |
US5614352A (en) | 1997-03-25 |
WO1996020965A1 (en) | 1996-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69507343D1 (de) | Reduzierung des gehaltes an metall-ionen einer lösung in pgmea von novolak-harzen mit einem chelatbildenden ionenaustausch-harz | |
DE59010064D1 (de) | Verfahren zur Herstellung von Novolak-Harzen mit geringem Metallionengehalt | |
DK160322C (da) | Korrosionshindrende overtraeksmiddel indeholdende en epoxyharpiks | |
DE3680241D1 (de) | Als konservendosenlack verwendbare waessrige epoxydharzdispersionen. | |
DE69521147D1 (de) | Reduktion des metallionensgehaltes in novolakharzen mit einem ionenaustauschharz in einem polaren lösungsmittel, und photoresistzusammensetzungen mit diesen novolaken | |
DE3381752D1 (de) | Werkzeug im bohrloch mit einer fluessigen feder. | |
BR8306655A (pt) | Processo e aparelho para empilhamento no contador de programa para sub-rotinas e interrupcoes encaixadas | |
EP0271199A3 (en) | Novolak resin for positive photoresist | |
GB8510722D0 (en) | Silicon-containing novolak resin | |
DE69326727D1 (de) | Entgasung mit Hilfe von Wasser | |
EP0175588A3 (en) | Novolac based epoxy resin curing agents for use in aqueous systems | |
DE69400453D1 (de) | Dampfbügeleisen mit einem Aussentank | |
BR8803009A (pt) | Processo de realcar o brilho e manter a resistencia a corrosao de um revestimento auto-depositado | |
DE69505265D1 (de) | Metallionengehalt reduzierung von novolakharzlösungen mit einem anionenaustauscherharz | |
DE69015941D1 (de) | Epoxyacrylat-Harze und fotosensitive Harzzusammensetzungen. | |
DK114786A (da) | Forbedret epoxyharpiks til anvendelse ved belaegning af daaser samt fremgangsmaade til fremstilling af saadanne epoxyharpikser | |
DK162024C (da) | Graensefladeperler til mixed-bed ionbytterharpikser samt mixed-bed ionbyttermateriale | |
DE3274354D1 (en) | Novolak resin and a positive photoresist composition containing the same | |
DE69314965D1 (de) | Novolakharzgemische | |
BR8604531A (pt) | Resinas epoxi novolac tendo reduzidos componentes com funcionalidade 2 e um processo para a reducao de componentes com funcionalidade 2 em resinas novolac | |
FI872534A0 (fi) | Fenolihartseihin pohjautuvat uudet hartsiseokset | |
DE69326401D1 (de) | Entgasung mit Hilfe einer Flüssigkeit | |
DK261983A (da) | Pigmentholdigt, korrosionsbestandigt, termohaerdende overtraeksmateriale i oploesning i et organisk oploesningsmiddel samt anvendelse af materialet til korrosionsbeskyttelse af en metaloverflade | |
DE59010398D1 (de) | Neue Epoxidharze | |
DE69306357D1 (de) | Einrichtung zur Zusammensetzung von zwei Teilen in einer Verschraubungsstation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU |
|
8339 | Ceased/non-payment of the annual fee |