CN1171799A - 降低在pgmea中的酚醛清漆树脂溶液的金属离子含量 - Google Patents
降低在pgmea中的酚醛清漆树脂溶液的金属离子含量 Download PDFInfo
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- CN1171799A CN1171799A CN95197185.9A CN95197185A CN1171799A CN 1171799 A CN1171799 A CN 1171799A CN 95197185 A CN95197185 A CN 95197185A CN 1171799 A CN1171799 A CN 1171799A
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- Prior art keywords
- exchange resin
- ion
- ion exchange
- solution
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 103
- 239000003456 ion exchange resin Substances 0.000 claims abstract description 85
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- 238000000034 method Methods 0.000 claims abstract description 57
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- GLDUZMNCEGHSBP-UHFFFAOYSA-N 2-(2-octylphenoxy)ethanol Chemical compound CCCCCCCCC1=CC=CC=C1OCCO GLDUZMNCEGHSBP-UHFFFAOYSA-N 0.000 description 1
- YVLNDCLPPGIRCP-UHFFFAOYSA-N 2-nitro-3-phenylprop-2-enoic acid Chemical compound OC(=O)C([N+]([O-])=O)=CC1=CC=CC=C1 YVLNDCLPPGIRCP-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
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- 241000723346 Cinnamomum camphora Species 0.000 description 1
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- WWKGVZASJYXZKN-UHFFFAOYSA-N Methyl violet 2B Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC(N)=CC=1)=C1C=CC(=[N+](C)C)C=C1 WWKGVZASJYXZKN-UHFFFAOYSA-N 0.000 description 1
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- 239000011777 magnesium Substances 0.000 description 1
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- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- PGSADBUBUOPOJS-UHFFFAOYSA-N neutral red Chemical compound Cl.C1=C(C)C(N)=CC2=NC3=CC(N(C)C)=CC=C3N=C21 PGSADBUBUOPOJS-UHFFFAOYSA-N 0.000 description 1
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- 239000011664 nicotinic acid Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
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- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
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- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003385 sodium Chemical class 0.000 description 1
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- 239000008117 stearic acid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- JEVGKYBUANQAKG-UHFFFAOYSA-N victoria blue R Chemical compound [Cl-].C12=CC=CC=C2C(=[NH+]CC)C=CC1=C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 JEVGKYBUANQAKG-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- MECHNRXZTMCUDQ-RKHKHRCZSA-N vitamin D2 Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)/C=C/[C@H](C)C(C)C)=C\C=C1\C[C@@H](O)CCC1=C MECHNRXZTMCUDQ-RKHKHRCZSA-N 0.000 description 1
- 235000001892 vitamin D2 Nutrition 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/366,614 | 1994-12-30 | ||
US08/366,614 US5614352A (en) | 1994-12-30 | 1994-12-30 | Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1171799A true CN1171799A (zh) | 1998-01-28 |
CN1074426C CN1074426C (zh) | 2001-11-07 |
Family
ID=23443761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95197185A Expired - Fee Related CN1074426C (zh) | 1994-12-30 | 1995-12-21 | 降低在pgmea中的酚醛清漆树脂溶液的金属离子含量 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5614352A (zh) |
EP (1) | EP0805828B1 (zh) |
JP (1) | JPH10512309A (zh) |
KR (1) | KR100425427B1 (zh) |
CN (1) | CN1074426C (zh) |
DE (1) | DE69507343T2 (zh) |
WO (1) | WO1996020965A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105022228A (zh) * | 2014-04-30 | 2015-11-04 | 住友电木株式会社 | 感光性树脂材料和树脂膜 |
Families Citing this family (16)
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SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
US5830990A (en) * | 1992-07-10 | 1998-11-03 | Clariant Finance (Bvi) Limited | Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists |
US5837417A (en) * | 1994-12-30 | 1998-11-17 | Clariant Finance (Bvi) Limited | Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition |
US6029679A (en) * | 1995-09-07 | 2000-02-29 | Hitachi, Ltd. | Semiconductor cleaning and production methods using a film repulsing fine particle contaminants |
US5750031A (en) * | 1995-09-26 | 1998-05-12 | Clariant Finance (Bvi) Limited | Process for producing surfactant having a low metal ion level and developer produced therefrom |
US5656413A (en) * | 1995-09-28 | 1997-08-12 | Hoechst Celanese Corporation | Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom |
US5962183A (en) * | 1995-11-27 | 1999-10-05 | Clariant Finance (Bvi) Limited | Metal ion reduction in photoresist compositions by chelating ion exchange resin |
US5665517A (en) * | 1996-01-11 | 1997-09-09 | Hoechst Celanese Corporation | Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom |
CN1244930A (zh) * | 1996-12-17 | 2000-02-16 | 克拉里安特国际有限公司 | 通过离子交换法来减少含有机极性溶剂的抗光蚀剂组合物中的金属离子污染物的方法 |
US5936071A (en) * | 1998-02-02 | 1999-08-10 | Clariant Finance (Bvi) Limited | Process for making a photoactive compound and photoresist therefrom |
US6358672B2 (en) * | 1998-02-05 | 2002-03-19 | Samsung Electronics Co., Ltd. | Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist |
US5955570A (en) * | 1998-07-01 | 1999-09-21 | Clariant International Ltd. | Trace metal ion reduction by Ion Exchange Pack |
US6893958B2 (en) * | 2002-04-26 | 2005-05-17 | Micron Technology, Inc. | Methods for preventing cross-linking between multiple resists and patterning multiple resists |
US20040206702A1 (en) * | 2002-08-08 | 2004-10-21 | Davidson James M. | Use of an oxidizer to improve trace metals removal from photoresist and photoresist components |
CN107098810B (zh) * | 2017-05-16 | 2021-04-30 | 天津大学 | 一种制备电子级丙二醇甲醚醋酸酯的分离提纯方法 |
JP7236806B2 (ja) | 2018-01-09 | 2023-03-10 | スリーエム イノベイティブ プロパティズ カンパニー | フィルター、金属イオンの除去方法及び金属イオン除去装置 |
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JPS5884814A (ja) * | 1981-11-17 | 1983-05-21 | Dainippon Ink & Chem Inc | ノボラツク型フエノ−ル系樹脂の製造法 |
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SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
EP0671025B1 (en) * | 1992-11-25 | 1997-08-13 | Hoechst Celanese Corporation | Metal ion reduction in bottom anti-reflective coatings for photoresists |
US5286606A (en) * | 1992-12-29 | 1994-02-15 | Hoechst Celanese Corporation | Process for producing a developer having a low metal ion level |
WO1994014858A1 (en) * | 1992-12-29 | 1994-07-07 | Hoechst Celanese Corporation | Metal ion reduction in polyhydroxystyrene and photoresists |
US5476750A (en) * | 1992-12-29 | 1995-12-19 | Hoechst Celanese Corporation | Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists |
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-
1994
- 1994-12-30 US US08/366,614 patent/US5614352A/en not_active Expired - Fee Related
-
1995
- 1995-12-21 CN CN95197185A patent/CN1074426C/zh not_active Expired - Fee Related
- 1995-12-21 JP JP8521082A patent/JPH10512309A/ja not_active Ceased
- 1995-12-21 DE DE69507343T patent/DE69507343T2/de not_active Expired - Fee Related
- 1995-12-21 EP EP95943931A patent/EP0805828B1/en not_active Expired - Lifetime
- 1995-12-21 KR KR1019970704385A patent/KR100425427B1/ko not_active IP Right Cessation
- 1995-12-21 WO PCT/US1995/016685 patent/WO1996020965A1/en active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105022228A (zh) * | 2014-04-30 | 2015-11-04 | 住友电木株式会社 | 感光性树脂材料和树脂膜 |
Also Published As
Publication number | Publication date |
---|---|
KR100425427B1 (ko) | 2004-09-13 |
EP0805828A1 (en) | 1997-11-12 |
DE69507343D1 (de) | 1999-02-25 |
CN1074426C (zh) | 2001-11-07 |
EP0805828B1 (en) | 1999-01-13 |
DE69507343T2 (de) | 1999-09-02 |
JPH10512309A (ja) | 1998-11-24 |
US5614352A (en) | 1997-03-25 |
WO1996020965A1 (en) | 1996-07-11 |
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