DE69425632D1 - Verfahren zur Herstellung einer kristallisierten Halbleiterschicht und diese verwendender Halbleitervorrichtungen - Google Patents
Verfahren zur Herstellung einer kristallisierten Halbleiterschicht und diese verwendender HalbleitervorrichtungenInfo
- Publication number
- DE69425632D1 DE69425632D1 DE69425632T DE69425632T DE69425632D1 DE 69425632 D1 DE69425632 D1 DE 69425632D1 DE 69425632 T DE69425632 T DE 69425632T DE 69425632 T DE69425632 T DE 69425632T DE 69425632 D1 DE69425632 D1 DE 69425632D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- same
- semiconductor layer
- crystallized
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/016—Catalyst
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/918—Special or nonstandard dopant
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5339397A JP2860869B2 (ja) | 1993-12-02 | 1993-12-02 | 半導体装置およびその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69425632D1 true DE69425632D1 (de) | 2000-09-28 |
DE69425632T2 DE69425632T2 (de) | 2000-12-28 |
Family
ID=18327095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69425632T Expired - Lifetime DE69425632T2 (de) | 1993-12-02 | 1994-12-02 | Verfahren zur Herstellung einer kristallisierten Halbleiterschicht und diese verwendender Halbleitervorrichtungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US5585291A (de) |
EP (2) | EP0656644B1 (de) |
JP (1) | JP2860869B2 (de) |
KR (1) | KR100303110B1 (de) |
CN (3) | CN1196089C (de) |
DE (1) | DE69425632T2 (de) |
TW (1) | TW260831B (de) |
Families Citing this family (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100483651C (zh) | 1992-08-27 | 2009-04-29 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
US5403762A (en) | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
US6323071B1 (en) | 1992-12-04 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device |
TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
JP3562588B2 (ja) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
EP1119053B1 (de) * | 1993-02-15 | 2011-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zur Herstellung eines TFT-Halbleiterbauelementes |
US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
TW241377B (de) | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
US6090646A (en) | 1993-05-26 | 2000-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
KR100186886B1 (ko) * | 1993-05-26 | 1999-04-15 | 야마자끼 승페이 | 반도체장치 제작방법 |
US5818076A (en) * | 1993-05-26 | 1998-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
US5663077A (en) * | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
JPH0766424A (ja) * | 1993-08-20 | 1995-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2814049B2 (ja) | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
TW264575B (de) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
CN100472752C (zh) | 1993-12-02 | 2009-03-25 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
US6798023B1 (en) | 1993-12-02 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film |
US5869362A (en) * | 1993-12-02 | 1999-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
KR100319332B1 (ko) | 1993-12-22 | 2002-04-22 | 야마자끼 순페이 | 반도체장치및전자광학장치 |
JP3221473B2 (ja) | 1994-02-03 | 2001-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6162667A (en) * | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
TW273639B (en) * | 1994-07-01 | 1996-04-01 | Handotai Energy Kenkyusho Kk | Method for producing semiconductor device |
JPH0869967A (ja) | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
TW403993B (en) * | 1994-08-29 | 2000-09-01 | Semiconductor Energy Lab | Semiconductor circuit for electro-optical device and method of manufacturing the same |
JP3442500B2 (ja) * | 1994-08-31 | 2003-09-02 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
TW374247B (en) * | 1994-09-15 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Method of fabricating semiconductor device |
US6127279A (en) * | 1994-09-26 | 2000-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Solution applying method |
US6300659B1 (en) | 1994-09-30 | 2001-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and fabrication method for same |
US5915174A (en) * | 1994-09-30 | 1999-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for producing the same |
US5942768A (en) | 1994-10-07 | 1999-08-24 | Semionductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
US6337229B1 (en) | 1994-12-16 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of making crystal silicon semiconductor and thin film transistor |
US6331475B1 (en) | 1995-01-12 | 2001-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method and manufacturing semiconductor device |
JP4130237B2 (ja) * | 1995-01-28 | 2008-08-06 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及び半導体装置の作製方法 |
KR100265179B1 (ko) * | 1995-03-27 | 2000-09-15 | 야마자끼 순페이 | 반도체장치와 그의 제작방법 |
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JP4056571B2 (ja) | 1995-08-02 | 2008-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3907726B2 (ja) | 1995-12-09 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法 |
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US6478263B1 (en) | 1997-01-17 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
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US7056381B1 (en) | 1996-01-26 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device |
US6180439B1 (en) | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
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JP3472024B2 (ja) | 1996-02-26 | 2003-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6100562A (en) * | 1996-03-17 | 2000-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
CN100405530C (zh) | 1996-05-15 | 2008-07-23 | 精工爱普生株式会社 | 薄膜器件的制造方法 |
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EP1365276B1 (de) | 1996-09-19 | 2005-12-28 | Seiko Epson Corporation | Verfahren zur Herstellung einer Matrixanzeigevorrichtung |
KR100297498B1 (ko) | 1996-11-20 | 2001-10-24 | 윤덕용 | 마이크로파를이용한다결정박막의제조방법 |
JP3899566B2 (ja) | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
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JP4242461B2 (ja) | 1997-02-24 | 2009-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5994164A (en) * | 1997-03-18 | 1999-11-30 | The Penn State Research Foundation | Nanostructure tailoring of material properties using controlled crystallization |
JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH10282414A (ja) * | 1997-04-09 | 1998-10-23 | Canon Inc | ズームレンズ |
US6241817B1 (en) * | 1997-05-24 | 2001-06-05 | Jin Jang | Method for crystallizing amorphous layer |
JP3376247B2 (ja) * | 1997-05-30 | 2003-02-10 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置 |
US6541793B2 (en) | 1997-05-30 | 2003-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and semiconductor device using thin-film transistors |
US6307214B1 (en) | 1997-06-06 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
JP3844561B2 (ja) | 1997-06-10 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6501094B1 (en) | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
JP3717634B2 (ja) | 1997-06-17 | 2005-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3295346B2 (ja) | 1997-07-14 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ |
JP3830623B2 (ja) * | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
JP3974229B2 (ja) | 1997-07-22 | 2007-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH1140498A (ja) | 1997-07-22 | 1999-02-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP3939399B2 (ja) * | 1997-07-22 | 2007-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4318768B2 (ja) * | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4180689B2 (ja) * | 1997-07-24 | 2008-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW408351B (en) * | 1997-10-17 | 2000-10-11 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
KR100340124B1 (ko) | 1998-02-10 | 2003-01-29 | 주승기 | 박막트랜지스터 제조방법 |
US6821710B1 (en) * | 1998-02-11 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US6171740B1 (en) | 1998-06-25 | 2001-01-09 | The Penn State Research Foundation | Electrostatic printing of a metallic toner to produce a polycrystalline semiconductor from an amorphous semiconductor |
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1993
- 1993-12-02 JP JP5339397A patent/JP2860869B2/ja not_active Expired - Fee Related
-
1994
- 1994-11-29 US US08/350,114 patent/US5585291A/en not_active Expired - Lifetime
- 1994-12-02 CN CNB991177967A patent/CN1196089C/zh not_active Expired - Fee Related
- 1994-12-02 KR KR1019940032879A patent/KR100303110B1/ko not_active IP Right Cessation
- 1994-12-02 EP EP94308974A patent/EP0656644B1/de not_active Expired - Lifetime
- 1994-12-02 EP EP99121017A patent/EP0984317A3/de not_active Withdrawn
- 1994-12-02 CN CNB2005100091618A patent/CN100521222C/zh not_active Expired - Fee Related
- 1994-12-02 CN CN94112772A patent/CN1052565C/zh not_active Expired - Fee Related
- 1994-12-02 DE DE69425632T patent/DE69425632T2/de not_active Expired - Lifetime
- 1994-12-05 TW TW083111270A patent/TW260831B/zh not_active IP Right Cessation
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Publication number | Publication date |
---|---|
CN1645621A (zh) | 2005-07-27 |
KR100303110B1 (ko) | 2001-12-15 |
TW260831B (de) | 1995-10-21 |
US5585291A (en) | 1996-12-17 |
CN1109211A (zh) | 1995-09-27 |
EP0656644A1 (de) | 1995-06-07 |
JPH07161635A (ja) | 1995-06-23 |
CN1196089C (zh) | 2005-04-06 |
EP0656644B1 (de) | 2000-08-23 |
CN1052565C (zh) | 2000-05-17 |
CN1248757A (zh) | 2000-03-29 |
CN100521222C (zh) | 2009-07-29 |
JP2860869B2 (ja) | 1999-02-24 |
DE69425632T2 (de) | 2000-12-28 |
EP0984317A2 (de) | 2000-03-08 |
EP0984317A3 (de) | 2001-03-21 |
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