DE69402232D1 - Universaler negativ arbeitender Photoresist - Google Patents

Universaler negativ arbeitender Photoresist

Info

Publication number
DE69402232D1
DE69402232D1 DE69402232T DE69402232T DE69402232D1 DE 69402232 D1 DE69402232 D1 DE 69402232D1 DE 69402232 T DE69402232 T DE 69402232T DE 69402232 T DE69402232 T DE 69402232T DE 69402232 D1 DE69402232 D1 DE 69402232D1
Authority
DE
Germany
Prior art keywords
negative working
working photoresist
universal negative
universal
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE69402232T
Other languages
English (en)
Other versions
DE69402232T2 (de
Inventor
William R Bunsvold
Willard E Conley
Jeffrey D Gelorme
Robert L Wood
Leo L Linehan
Ratnam Sooriyakumaran
Tsong-Lin Tai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21814865&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69402232(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69402232D1 publication Critical patent/DE69402232D1/de
Application granted granted Critical
Publication of DE69402232T2 publication Critical patent/DE69402232T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B3/00—Dyes with an anthracene nucleus condensed with one or more carbocyclic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69402232T 1993-02-26 1994-01-14 Universaler negativ arbeitender Photoresist Revoked DE69402232T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2340193A 1993-02-26 1993-02-26

Publications (2)

Publication Number Publication Date
DE69402232D1 true DE69402232D1 (de) 1997-04-30
DE69402232T2 DE69402232T2 (de) 1997-09-18

Family

ID=21814865

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69402232T Revoked DE69402232T2 (de) 1993-02-26 1994-01-14 Universaler negativ arbeitender Photoresist

Country Status (5)

Country Link
EP (1) EP0613050B1 (de)
JP (1) JP2708363B2 (de)
KR (1) KR940020179A (de)
DE (1) DE69402232T2 (de)
TW (1) TW338119B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077641A (en) * 1997-01-17 2000-06-20 Kodak Polychrome Graphics Llc Lithographic plates
GB9700877D0 (en) * 1997-01-17 1997-03-05 Horsell Graphic Ind Ltd Lithographic plates
JP3810510B2 (ja) * 1997-03-26 2006-08-16 富士写真フイルム株式会社 ネガ型画像記録材料及び平版印刷版原版
TW419615B (en) * 1997-09-18 2001-01-21 Ibm Photo crosslinkable, aqueous base developable negative photoresist composition and method for use thereof
US6455228B1 (en) 1999-08-25 2002-09-24 Tokyo Ohka Kogyo Co., Ltd. Multilayered body for photolithographic patterning
TWI289238B (en) 2000-01-13 2007-11-01 Fujifilm Corp Negative resist compositions using for electronic irradiation
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
JP4645789B2 (ja) 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
WO2003045915A1 (fr) 2001-11-30 2003-06-05 Wako Pure Chemical Industries, Ltd. Compose de bisimide, generateur d'acide et composition de reserve contenant ledit compose, procede de formation de motif au moyen de ladite composition
US7426775B2 (en) 2003-12-17 2008-09-23 The Procter + Gamble Company Polymeric structures comprising a hydrophile/lipophile system
US7714065B2 (en) 2003-12-17 2010-05-11 The Procter & Gamble Company Polymeric structures comprising a hydrophile/lipophile system
JP4396849B2 (ja) 2005-01-21 2010-01-13 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
EP2109005A1 (de) * 2008-04-07 2009-10-14 Stichting Dutch Polymer Institute Verfahren zur Herstellung einer Polymerreliefstruktur
JP6369132B2 (ja) * 2013-06-28 2018-08-08 住友ベークライト株式会社 ネガ型感光性樹脂組成物、硬化膜、電子装置およびポリマー
JP6122754B2 (ja) 2013-09-30 2017-04-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6209103B2 (ja) 2014-02-25 2017-10-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293339A (ja) * 1988-05-23 1989-11-27 Tosoh Corp フォトレジスト組成物
JPH0215270A (ja) * 1988-07-04 1990-01-18 Tosoh Corp フォトレジスト組成物
KR900005226A (ko) * 1988-09-29 1990-04-13 윌리엄 비이 해리스 감광성 조성물 및 양화 상과 음화 상의 생성방법
DE3943413A1 (de) * 1989-12-30 1991-07-04 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefstrukturen
CA2034274A1 (en) * 1990-02-07 1991-08-08 James A. Bonham Polymers containing halomethyl-1,3,5-triazine moieties
EP0487794A1 (de) * 1990-11-27 1992-06-03 Sony Corporation Verfahren zur Herstellung von Photolackmustern
JP3000740B2 (ja) * 1991-07-26 2000-01-17 日本ゼオン株式会社 レジスト組成物
EP0537524A1 (de) * 1991-10-17 1993-04-21 Shipley Company Inc. Strahlungsempfindliche Zusammensetzungen und Verfahren
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof

Also Published As

Publication number Publication date
EP0613050A2 (de) 1994-08-31
DE69402232T2 (de) 1997-09-18
JPH06301200A (ja) 1994-10-28
JP2708363B2 (ja) 1998-02-04
EP0613050A3 (de) 1995-07-05
EP0613050B1 (de) 1997-03-26
KR940020179A (ko) 1994-09-15
TW338119B (en) 1998-08-11

Similar Documents

Publication Publication Date Title
DE69329408T2 (de) Positiv arbeitende Photolackzusammensetzung
DE69525883T2 (de) Positiv-photoresistzusammensetzung
DE69322946T2 (de) Photolackzusammensetzung
DE69126834T3 (de) Positiv arbeitende Photoresistzusammensetzung
DE69301999D1 (de) Photoresist Zusammensetzung
DE69510519D1 (de) Positiv-arbeitende fotoempfindliche Zusammensetzung
DE69232042D1 (de) Positiv-arbeitende lichtempfindliche Zusammensetzung
DE69425786D1 (de) Photoresistzusammensetzung
DE69402232D1 (de) Universaler negativ arbeitender Photoresist
DE69130125T2 (de) Positiv arbeitende Photolackzusammensetzung
DE59108086D1 (de) Photoresist
DE69421982D1 (de) Positiv arbeitende Photoresistzusammensetzung
DE69601518D1 (de) Negativ arbeitende fotoempfindliche Zusammensetzungen
DE69226456D1 (de) Negativarbeitende Photoresistzusammensetzung
DE69424884D1 (de) Positiv arbeitende Photoresistzusammensetzung
DE69423858T2 (de) Positiv-arbeitende Fotolackzusammensetzung
DE69301273D1 (de) Positiv arbeitende Photolackzusammensetzung
DE69121001D1 (de) Positiv arbeitende Fotolackzusammensetzung
EP0459708A3 (en) Image reversal negative working photoresist
DE69710692T2 (de) Negativ arbeitende chemisch vertärkte Photoresistzusammensetzung
DE69308634D1 (de) Positiv arbeitende Photolackzusammensetzung
DE69130265D1 (de) Positive arbeitende Photolackzusammensetzung
DE69513433D1 (de) Positiv arbeitende Photoresistzusammensetzung
DE69132694D1 (de) Positiv arbeitende Photolackzusammensetzung
DE69317347D1 (de) Negativ arbeitende Photoresistzusammensetzung

Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation