DE69126834T3 - Positiv arbeitende Photoresistzusammensetzung - Google Patents

Positiv arbeitende Photoresistzusammensetzung

Info

Publication number
DE69126834T3
DE69126834T3 DE69126834T DE69126834T DE69126834T3 DE 69126834 T3 DE69126834 T3 DE 69126834T3 DE 69126834 T DE69126834 T DE 69126834T DE 69126834 T DE69126834 T DE 69126834T DE 69126834 T3 DE69126834 T3 DE 69126834T3
Authority
DE
Germany
Prior art keywords
photoresist composition
positive working
working photoresist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69126834T
Other languages
English (en)
Other versions
DE69126834D1 (de
DE69126834T2 (de
Inventor
Shinji Sakaguchi
Shiro Tan
Tadayoshi Kokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17096992&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69126834(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of DE69126834D1 publication Critical patent/DE69126834D1/de
Publication of DE69126834T2 publication Critical patent/DE69126834T2/de
Application granted granted Critical
Publication of DE69126834T3 publication Critical patent/DE69126834T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69126834T 1990-09-13 1991-09-12 Positiv arbeitende Photoresistzusammensetzung Expired - Lifetime DE69126834T3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2242973A JP2711590B2 (ja) 1990-09-13 1990-09-13 ポジ型フオトレジスト組成物

Publications (3)

Publication Number Publication Date
DE69126834D1 DE69126834D1 (de) 1997-08-21
DE69126834T2 DE69126834T2 (de) 1998-01-29
DE69126834T3 true DE69126834T3 (de) 2001-07-19

Family

ID=17096992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126834T Expired - Lifetime DE69126834T3 (de) 1990-09-13 1991-09-12 Positiv arbeitende Photoresistzusammensetzung

Country Status (5)

Country Link
US (1) US5340686A (de)
EP (1) EP0477691B2 (de)
JP (1) JP2711590B2 (de)
KR (1) KR0185994B1 (de)
DE (1) DE69126834T3 (de)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2743697B2 (ja) * 1991-04-26 1998-04-22 日本ゼオン株式会社 ポジ型レジスト組成物
US5376497A (en) * 1991-04-26 1994-12-27 Nippon Zeon Co., Ltd. Positive quinone diazide sulfonic acid ester resist composition containing select hydroxy compound additive
JPH05204144A (ja) * 1991-08-21 1993-08-13 Sumitomo Chem Co Ltd ポジ型レジスト組成物
US5318875A (en) * 1992-02-12 1994-06-07 Fuji Photo Film Co., Ltd. Positive quinonediazide photoresist composition containing select hydroxyphenol additive
JP2753912B2 (ja) * 1992-02-12 1998-05-20 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2935223B2 (ja) * 1992-04-14 1999-08-16 東京応化工業株式会社 レジストパターン形成用材料の製造方法及びタンタルのパターン形成方法
JPH05323604A (ja) * 1992-05-27 1993-12-07 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP2944327B2 (ja) * 1992-09-14 1999-09-06 富士写真フイルム株式会社 ポジ型感光性平版印刷版
DE69416564T2 (de) * 1993-04-28 1999-07-15 Toray Industries Positiv arbeitender elektronenstrahlresist
US5635328A (en) * 1993-08-21 1997-06-03 Konica Corporation Light-sensitive lithographic printing plate utilizing o-quinone diazide light-sensitive layer containing cyclic clathrate compound
JP3130188B2 (ja) * 1993-08-31 2001-01-31 富士写真フイルム株式会社 ポジ型感光性平版印刷版
JPH0859530A (ja) * 1994-06-15 1996-03-05 Sumitomo Chem Co Ltd ポリヒドロキシ化合物及びそれを含有するポジ型レジスト組成物
EP0698825A1 (de) * 1994-07-29 1996-02-28 AT&T Corp. Energieempfindlicher Resist und Verfahren zur Herstellung eines Geräts mit diesem Resist
KR19980701463A (ko) * 1995-01-17 1998-05-15 나까노 가쓰히꼬 포지티브형 레지스트 조성물
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
JP3324898B2 (ja) * 1995-02-24 2002-09-17 東京応化工業株式会社 ポジ型レジストパターンの製造方法
JPH0915853A (ja) * 1995-04-27 1997-01-17 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JPH0990622A (ja) * 1995-09-22 1997-04-04 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
JP3562673B2 (ja) 1996-01-22 2004-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
JP2001506769A (ja) * 1996-12-18 2001-05-22 クラリアント インターナショナル リミテッド 重合体添加剤を含有するフォトレジスト組成物
JP3652071B2 (ja) 1997-07-25 2005-05-25 東京応化工業株式会社 ノボラック樹脂前駆体およびノボラック樹脂の製造方法
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US5985507A (en) * 1998-02-18 1999-11-16 Olin Microelectronic Chemicals, Inc. Selected high thermal novolaks and positive-working radiation-sensitive compositions
JP3796564B2 (ja) * 2000-02-23 2006-07-12 信越化学工業株式会社 リフトオフレジスト組成物
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US7029657B2 (en) * 2002-08-02 2006-04-18 Balance Pharmaceuticals, Inc. Nasal spray steroid formulation and method
JP3977307B2 (ja) * 2003-09-18 2007-09-19 東京応化工業株式会社 ポジ型フォトレジスト組成物及びレジストパターン形成方法
JP4448705B2 (ja) 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4469692B2 (ja) 2004-09-14 2010-05-26 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
JP4474256B2 (ja) 2004-09-30 2010-06-02 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
EP1662319A3 (de) 2004-11-24 2009-05-27 Toray Industries, Inc. Lichtempfindliche Harzzusammensetzung
JP4452632B2 (ja) 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7947421B2 (en) 2005-01-24 2011-05-24 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4562537B2 (ja) 2005-01-28 2010-10-13 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
EP1698937B1 (de) 2005-03-04 2015-12-23 FUJIFILM Corporation Positiv arbeitende Resistzusammensetzung und Verfahren zur Herstellung von Mustern unter Verwendung dieser Zusammensetzung
US7960087B2 (en) 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
JP4579019B2 (ja) 2005-03-17 2010-11-10 富士フイルム株式会社 ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法
EP1720072B1 (de) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Zusammensetzungen und Verfahren für Immersionslithografie
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4695941B2 (ja) 2005-08-19 2011-06-08 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI403843B (zh) 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
EP1795960B1 (de) 2005-12-09 2019-06-05 Fujifilm Corporation Positive Resistzusammensetzung, Verfahren zur Musterbildung unter Verwendung der positiven Resistzusammensetzung, Verwendung der positiven Resistzusammensetzung
JP4918312B2 (ja) * 2006-09-01 2012-04-18 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP4911456B2 (ja) 2006-11-21 2012-04-04 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物に用いられる高分子化合物、該高分子化合物の製造方法及びポジ型感光性組成物を用いたパターン形成方法
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
EP1962139A1 (de) 2007-02-23 2008-08-27 FUJIFILM Corporation Negative Resistzusammensetzung und Verfahren zur Strukturformung damit
EP1975714A1 (de) 2007-03-28 2008-10-01 FUJIFILM Corporation Positive Resistzusammensetzung und Verfahren zur Strukturformung
EP1975716B1 (de) 2007-03-28 2013-05-15 Fujifilm Corporation Positive Resistzusammensetzung und Verfahren zur Strukturformung
EP1980911A3 (de) 2007-04-13 2009-06-24 FUJIFILM Corporation Strukturformungsverfahren, in dem Strukturformungsverfahren zu verwendende Harzzusammensetzung, in dem Strukturformungsverfahren zu verwendende negative Entwicklungslösung und in dem Strukturformungsverfahren zu verwendende Spüllösung
EP2138898B1 (de) 2007-04-13 2014-05-21 FUJIFILM Corporation Verfahren zur Strukturbildung und Verwendung einer Fotolackzusammensetzung in diesem Verfahren
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
JP2008311474A (ja) 2007-06-15 2008-12-25 Fujifilm Corp パターン形成方法
US7566527B2 (en) * 2007-06-27 2009-07-28 International Business Machines Corporation Fused aromatic structures and methods for photolithographic applications
JP2009053688A (ja) 2007-07-30 2009-03-12 Fujifilm Corp ポジ型レジスト組成物及びパターン形成方法
JP5066405B2 (ja) 2007-08-02 2012-11-07 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法
US8110333B2 (en) 2007-08-03 2012-02-07 Fujifilm Corporation Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound
JP5449675B2 (ja) 2007-09-21 2014-03-19 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP5150296B2 (ja) 2008-02-13 2013-02-20 富士フイルム株式会社 電子線、ｘ線またはｅｕｖ用ポジ型レジスト組成物及びこれを用いたパターン形成方法
US9046773B2 (en) 2008-03-26 2015-06-02 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound
JP5997873B2 (ja) 2008-06-30 2016-09-28 富士フイルム株式会社 感光性組成物及びそれを用いたパターン形成方法
JP5244711B2 (ja) 2008-06-30 2013-07-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP5746818B2 (ja) 2008-07-09 2015-07-08 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
KR101794035B1 (ko) 2008-12-12 2017-11-06 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물 및 그것을 사용한 패턴형성방법
KR20110094054A (ko) 2008-12-12 2011-08-19 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물 및 그 조성물을 이용한 패턴 형성 방법
JP5377172B2 (ja) 2009-03-31 2013-12-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP5712099B2 (ja) 2010-09-28 2015-05-07 富士フイルム株式会社 レジスト組成物、並びに、それを用いたレジスト膜及びパターン形成方法
KR102134381B1 (ko) 2017-07-31 2020-07-15 주식회사 엘지화학 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법
CN107844028B (zh) * 2017-11-07 2021-04-30 潍坊星泰克微电子材料有限公司 一种光刻胶、制备方法及其光刻工艺
EP3769156B1 (de) * 2018-03-23 2024-03-20 Merck Patent GmbH Negativ wirkender fotolack mit ultradicker schicht
CN113166327A (zh) 2018-11-22 2021-07-23 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法

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Also Published As

Publication number Publication date
JPH04122938A (ja) 1992-04-23
EP0477691A3 (en) 1992-11-04
DE69126834D1 (de) 1997-08-21
KR920006803A (ko) 1992-04-28
DE69126834T2 (de) 1998-01-29
EP0477691B1 (de) 1997-07-16
KR0185994B1 (ko) 1999-04-01
US5340686A (en) 1994-08-23
EP0477691A2 (de) 1992-04-01
EP0477691B2 (de) 2001-03-07
JP2711590B2 (ja) 1998-02-10

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