DE60014842D1 - Rohling für gedämpfte Phasenschiebermaske sowie entsprechende Maske - Google Patents

Rohling für gedämpfte Phasenschiebermaske sowie entsprechende Maske

Info

Publication number
DE60014842D1
DE60014842D1 DE2000614842 DE60014842T DE60014842D1 DE 60014842 D1 DE60014842 D1 DE 60014842D1 DE 2000614842 DE2000614842 DE 2000614842 DE 60014842 T DE60014842 T DE 60014842T DE 60014842 D1 DE60014842 D1 DE 60014842D1
Authority
DE
Germany
Prior art keywords
mask
blank
phase shift
damped phase
damped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE2000614842
Other languages
English (en)
Other versions
DE60014842T2 (de
Inventor
Toshiaki Motonaga
Toshifumi Yokoyama
Takafumi Okamura
Yoshinori Kinase
Hiroshi Mohri
Junji Fujikawa
Hiro-O Nakagawa
Shigeki Sumida
Satoshi Yusa
Masashi Ohtsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35552299A external-priority patent/JP2001174973A/ja
Priority claimed from JP2000154687A external-priority patent/JP4641086B2/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Application granted granted Critical
Publication of DE60014842D1 publication Critical patent/DE60014842D1/de
Publication of DE60014842T2 publication Critical patent/DE60014842T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60014842T 1999-12-15 2000-12-15 Rohling für gedämpfte Phasenschiebermaske sowie entsprechende Maske Expired - Fee Related DE60014842T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP35552299 1999-12-15
JP35552299A JP2001174973A (ja) 1999-12-15 1999-12-15 ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス
JP2000154687 2000-05-25
JP2000154687A JP4641086B2 (ja) 2000-05-25 2000-05-25 ハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクとその製造方法

Publications (2)

Publication Number Publication Date
DE60014842D1 true DE60014842D1 (de) 2004-11-18
DE60014842T2 DE60014842T2 (de) 2006-03-09

Family

ID=26580275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60014842T Expired - Fee Related DE60014842T2 (de) 1999-12-15 2000-12-15 Rohling für gedämpfte Phasenschiebermaske sowie entsprechende Maske

Country Status (5)

Country Link
US (1) US6458496B2 (de)
EP (1) EP1116998B1 (de)
KR (1) KR100725214B1 (de)
DE (1) DE60014842T2 (de)
TW (1) TW457399B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
KR100618811B1 (ko) * 2001-03-20 2006-08-31 삼성전자주식회사 반도체 소자 제조를 위한 위상 반전 마스크 및 그 제조방법
JP4053263B2 (ja) * 2001-08-17 2008-02-27 株式会社ルネサステクノロジ 半導体装置の製造方法
DE10307518B4 (de) * 2002-02-22 2011-04-14 Hoya Corp. Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
KR100474012B1 (ko) * 2002-06-08 2005-03-10 주식회사 피케이엘 위상반전 마스크 제조방법
US7329474B2 (en) * 2003-03-31 2008-02-12 Shin-Estu Chemical Co., Ltd. Photomask blank, photomask, and method of manufacture
US7029803B2 (en) * 2003-09-05 2006-04-18 Schott Ag Attenuating phase shift mask blank and photomask
US20050260504A1 (en) * 2004-04-08 2005-11-24 Hans Becker Mask blank having a protection layer
US7678721B2 (en) * 2006-10-26 2010-03-16 Agy Holding Corp. Low dielectric glass fiber
JP5161017B2 (ja) * 2007-09-27 2013-03-13 Hoya株式会社 マスクブランク、マスクブランクの製造方法、及びインプリント用モールドの製造方法
JP5201361B2 (ja) * 2009-05-15 2013-06-05 信越化学工業株式会社 フォトマスクブランクの加工方法
JP6812236B2 (ja) * 2016-12-27 2021-01-13 Hoya株式会社 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP7126836B2 (ja) * 2017-03-28 2022-08-29 Hoya株式会社 位相シフトマスクブランク及びそれを用いた位相シフトマスクの製造方法、並びにパターン転写方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62116364A (ja) * 1985-11-14 1987-05-27 Shigeo Hirose 索状能動型移動装置
JPH06105209B2 (ja) * 1986-08-08 1994-12-21 マツダ株式会社 ヘツドライトの光軸調整方法及びその装置
JPH06239701A (ja) * 1992-03-17 1994-08-30 Takeda Engei Kk 切花の活力保持剤及び活力保持方法
JP3312702B2 (ja) * 1993-04-09 2002-08-12 大日本印刷株式会社 位相シフトフォトマスク及び位相シフトフォトマスク用ブランクス
JP3262303B2 (ja) * 1993-08-17 2002-03-04 大日本印刷株式会社 ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス
JP3453435B2 (ja) * 1993-10-08 2003-10-06 大日本印刷株式会社 位相シフトマスクおよびその製造方法
JPH0854795A (ja) * 1994-08-09 1996-02-27 Canon Inc 定着装置
JPH0876353A (ja) * 1994-09-08 1996-03-22 Nec Corp 位相シフトマスクの製造方法
JPH08123010A (ja) * 1994-10-28 1996-05-17 Toppan Printing Co Ltd 位相シフトマスクおよびそれに用いるマスクブランク
JPH09244212A (ja) * 1996-03-12 1997-09-19 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランク
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
KR19990050484A (ko) * 1997-12-17 1999-07-05 구본준 하프-톤 위상 반전 마스크의 제조 방법
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
JP2002072445A (ja) * 2000-09-04 2002-03-12 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス

Also Published As

Publication number Publication date
US6458496B2 (en) 2002-10-01
EP1116998A2 (de) 2001-07-18
TW457399B (en) 2001-10-01
EP1116998A3 (de) 2002-10-23
KR20010062388A (ko) 2001-07-07
DE60014842T2 (de) 2006-03-09
EP1116998B1 (de) 2004-10-13
US20010005564A1 (en) 2001-06-28
KR100725214B1 (ko) 2007-06-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee