DE3879323D1 - Duennschicht-mos-transistor mit zwei gate-elektroden, die gegenueber der halbleitenden schicht liegen. - Google Patents

Duennschicht-mos-transistor mit zwei gate-elektroden, die gegenueber der halbleitenden schicht liegen.

Info

Publication number
DE3879323D1
DE3879323D1 DE8888113531T DE3879323T DE3879323D1 DE 3879323 D1 DE3879323 D1 DE 3879323D1 DE 8888113531 T DE8888113531 T DE 8888113531T DE 3879323 T DE3879323 T DE 3879323T DE 3879323 D1 DE3879323 D1 DE 3879323D1
Authority
DE
Germany
Prior art keywords
mos transistor
gate electrodes
layer
laying against
thick layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888113531T
Other languages
English (en)
Other versions
DE3879323T2 (de
Inventor
Hisao Sony Corporation Hayashi
Michio Sony Corporatio Negishi
Takashi Sony Corporati Noguchi
Takefumi Sony Corporati Oshima
Yuji Sony Corporation Hayashi
Toshikazu Sony Corpora Maekawa
Takeshi Sony Corpor Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3879323D1 publication Critical patent/DE3879323D1/de
Application granted granted Critical
Publication of DE3879323T2 publication Critical patent/DE3879323T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
DE88113531T 1987-08-24 1988-08-19 Dünnschicht-MOS-Transistor mit zwei Gate-Elektroden, die gegenüber der halbleitenden Schicht liegen. Expired - Lifetime DE3879323T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62209816A JPS6453460A (en) 1987-08-24 1987-08-24 Mos transistor

Publications (2)

Publication Number Publication Date
DE3879323D1 true DE3879323D1 (de) 1993-04-22
DE3879323T2 DE3879323T2 (de) 1993-09-30

Family

ID=16579090

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88113531T Expired - Lifetime DE3879323T2 (de) 1987-08-24 1988-08-19 Dünnschicht-MOS-Transistor mit zwei Gate-Elektroden, die gegenüber der halbleitenden Schicht liegen.

Country Status (5)

Country Link
EP (1) EP0304824B1 (de)
JP (1) JPS6453460A (de)
KR (1) KR970011766B1 (de)
CA (1) CA1315421C (de)
DE (1) DE3879323T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984040A (en) * 1989-06-15 1991-01-08 Xerox Corporation High voltage thin film transistor with second gate
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
US5173753A (en) * 1989-08-10 1992-12-22 Industrial Technology Research Institute Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance
JPH0824193B2 (ja) * 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
US5420048A (en) * 1991-01-09 1995-05-30 Canon Kabushiki Kaisha Manufacturing method for SOI-type thin film transistor
JP3254007B2 (ja) 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US5777364A (en) * 1992-11-30 1998-07-07 International Business Machines Corporation Graded channel field effect transistor
JPH07302912A (ja) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
JP4076648B2 (ja) 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
JP4008133B2 (ja) 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US6576202B1 (en) 2000-04-21 2003-06-10 Kin-Chung Ray Chiu Highly efficient compact capacitance coupled plasma reactor/generator and method
US6982460B1 (en) 2000-07-07 2006-01-03 International Business Machines Corporation Self-aligned gate MOSFET with separate gates
JP4610455B2 (ja) * 2005-09-29 2011-01-12 株式会社半導体エネルギー研究所 半導体装置
JP2019067938A (ja) * 2017-10-02 2019-04-25 シャープ株式会社 薄膜トランジスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422090A (en) * 1979-07-25 1983-12-20 Northern Telecom Limited Thin film transistors
GB2064866A (en) * 1979-11-30 1981-06-17 Gen Electric Co Ltd Field effect semiconductor device
JPH0750785B2 (ja) * 1983-10-27 1995-05-31 工業技術院長 電界効果トランジスタにおける短チャネル効果の抑制方法

Also Published As

Publication number Publication date
KR970011766B1 (ko) 1997-07-15
EP0304824A3 (en) 1989-05-03
CA1315421C (en) 1993-03-30
DE3879323T2 (de) 1993-09-30
EP0304824B1 (de) 1993-03-17
JPS6453460A (en) 1989-03-01
EP0304824A2 (de) 1989-03-01
KR890004444A (ko) 1989-04-22

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

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