DE69020316D1 - MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor. - Google Patents

MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor.

Info

Publication number
DE69020316D1
DE69020316D1 DE69020316T DE69020316T DE69020316D1 DE 69020316 D1 DE69020316 D1 DE 69020316D1 DE 69020316 T DE69020316 T DE 69020316T DE 69020316 T DE69020316 T DE 69020316T DE 69020316 D1 DE69020316 D1 DE 69020316D1
Authority
DE
Germany
Prior art keywords
gate
bipolar transistor
lateral bipolar
mos circuit
optimized lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69020316T
Other languages
English (en)
Other versions
DE69020316T2 (de
Inventor
Sang Hoo Dhong
Chih-Liang Chen
Hyun Jong Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69020316D1 publication Critical patent/DE69020316D1/de
Publication of DE69020316T2 publication Critical patent/DE69020316T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
DE69020316T 1989-12-08 1990-10-20 MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor. Expired - Fee Related DE69020316T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/447,984 US4999518A (en) 1989-12-08 1989-12-08 MOS switching circuit having gate enhanced lateral bipolar transistor

Publications (2)

Publication Number Publication Date
DE69020316D1 true DE69020316D1 (de) 1995-07-27
DE69020316T2 DE69020316T2 (de) 1996-02-08

Family

ID=23778545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69020316T Expired - Fee Related DE69020316T2 (de) 1989-12-08 1990-10-20 MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor.

Country Status (4)

Country Link
US (1) US4999518A (de)
EP (1) EP0431290B1 (de)
JP (1) JPH03190426A (de)
DE (1) DE69020316T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155387A (en) * 1989-12-28 1992-10-13 North American Philips Corp. Circuit suitable for differential multiplexers and logic gates utilizing bipolar and field-effect transistors
US5134323A (en) * 1990-08-03 1992-07-28 Congdon James E Three terminal noninverting transistor switch
JPH04200013A (ja) * 1990-11-29 1992-07-21 Hitachi Ltd 論理回路
US5075571A (en) * 1991-01-02 1991-12-24 International Business Machines Corp. PMOS wordline boost cricuit for DRAM
JP3396763B2 (ja) * 1992-05-22 2003-04-14 日本テキサス・インスツルメンツ株式会社 ロジック回路
SE501218C2 (sv) * 1993-05-18 1994-12-12 Asea Brown Boveri Lateral bipolär transistor med variabel basvidd och ett förfarande för styrning av basvidden
US5530381A (en) * 1993-05-24 1996-06-25 Texas Instruments Incorporated Integrated high-speed bipolar logic circuit method
JP2508968B2 (ja) * 1993-05-25 1996-06-19 日本電気株式会社 半導体装置
US5671397A (en) 1993-12-27 1997-09-23 At&T Global Information Solutions Company Sea-of-cells array of transistors
US6675361B1 (en) 1993-12-27 2004-01-06 Hyundai Electronics America Method of constructing an integrated circuit comprising an embedded macro
US5591655A (en) * 1995-02-28 1997-01-07 Sgs-Thomson Microelectronics, Inc. Process for manufacturing a vertical switched-emitter structure with improved lateral isolation
US5614424A (en) * 1996-01-16 1997-03-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for fabricating an accumulated-base bipolar junction transistor
US6245607B1 (en) 1998-12-28 2001-06-12 Industrial Technology Research Institute Buried channel quasi-unipolar transistor
US6255694B1 (en) 2000-01-18 2001-07-03 International Business Machines Corporation Multi-function semiconductor structure and method
JP5090402B2 (ja) * 2009-05-15 2012-12-05 シャープ株式会社 半導体装置およびその駆動方法
US8531001B2 (en) 2011-06-12 2013-09-10 International Business Machines Corporation Complementary bipolar inverter
US8526220B2 (en) 2011-06-12 2013-09-03 International Business Machines Corporation Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform
US8929133B2 (en) 2012-12-02 2015-01-06 International Business Machines Corporation Complementary SOI lateral bipolar for SRAM in a CMOS platform
US11588044B2 (en) * 2020-12-02 2023-02-21 Globalfoundries U.S. Inc. Bipolar junction transistor (BJT) structure and related method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227279A (en) * 1975-08-25 1977-03-01 Mitsubishi Electric Corp Semiconductor unit
US4331969A (en) * 1976-11-08 1982-05-25 General Electric Company Field-controlled bipolar transistor
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
JPS5751952A (en) * 1980-09-12 1982-03-27 Sanshin Ind Co Ltd Ignition apparatus of 2-cycle engine
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
JPS5986923A (ja) * 1982-11-10 1984-05-19 Toshiba Corp 半導体装置
EP0192093B1 (de) * 1985-01-30 1990-06-13 Kabushiki Kaisha Toshiba Halbleitervorrichtung und Methode zu deren Herstellung
JPS61274512A (ja) * 1985-05-30 1986-12-04 Oki Electric Ind Co Ltd 出力バツフア回路
JPS6481271A (en) * 1987-09-22 1989-03-27 Nec Corp Conductivity-modulation type mosfet
US4829200A (en) * 1987-10-13 1989-05-09 Delco Electronics Corporation Logic circuits utilizing a composite junction transistor-MOSFET device
JP2653095B2 (ja) * 1988-04-22 1997-09-10 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
GB8810973D0 (en) * 1988-05-10 1988-06-15 Stc Plc Improvements in integrated circuits

Also Published As

Publication number Publication date
EP0431290B1 (de) 1995-06-21
US4999518A (en) 1991-03-12
EP0431290A3 (en) 1992-01-29
DE69020316T2 (de) 1996-02-08
EP0431290A2 (de) 1991-06-12
JPH03190426A (ja) 1991-08-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee