JPS6453460A - Mos transistor - Google Patents

Mos transistor

Info

Publication number: JPS6453460A
Authority: JP; Japan
Prior art keywords: gate electrode; gate insulating; polycrystalline silicon; active layer; layer
Prior art date: 1987-08-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP62209816A

Other languages

English (en)

Inventor

Hisao Hayashi

Michio Negishi

Takashi Noguchi

Takefumi Oshima

Yuji Hayashi

Toshiichi Maekawa

Takeshi Matsushita

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-08-24

Filing date

1987-08-24

Publication date

1989-03-01

1987-08-24 Application filed by Sony Corp filed Critical Sony Corp

1987-08-24 Priority to JP62209816A priority Critical patent/JPS6453460A/ja

1988-08-19 Priority to EP88113531A priority patent/EP0304824B1/en

1988-08-19 Priority to DE88113531T priority patent/DE3879323T2/de

1988-08-19 Priority to KR1019880010526A priority patent/KR970011766B1/ko

1988-08-23 Priority to CA000575400A priority patent/CA1315421C/en

1989-03-01 Publication of JPS6453460A publication Critical patent/JPS6453460A/ja

1990-10-19 Priority to US07/601,003 priority patent/US5140391A/en

Status Pending legal-status Critical Current

Links

VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
235000012239 silicon dioxide Nutrition 0.000 abstract 4
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
229910052681 coesite Inorganic materials 0.000 abstract 2
229910052906 cristobalite Inorganic materials 0.000 abstract 2
239000010453 quartz Substances 0.000 abstract 2
239000004065 semiconductor Substances 0.000 abstract 2
239000000377 silicon dioxide Substances 0.000 abstract 2
229910052682 stishovite Inorganic materials 0.000 abstract 2
239000000758 substrate Substances 0.000 abstract 2
229910052905 tridymite Inorganic materials 0.000 abstract 2
230000015572 biosynthetic process Effects 0.000 abstract 1
239000012535 impurity Substances 0.000 abstract 1
239000010409 thin film Substances 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Thin Film Transistor (AREA)

JP62209816A 1987-08-24 1987-08-24 Mos transistor Pending JPS6453460A (en)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
JP62209816A JPS6453460A (en)	1987-08-24	1987-08-24	Mos transistor
EP88113531A EP0304824B1 (en)	1987-08-24	1988-08-19	Thin film mos transistor having pair of gate electrodes opposing across semiconductor layer
DE88113531T DE3879323T2 (de)	1987-08-24	1988-08-19	Dünnschicht-MOS-Transistor mit zwei Gate-Elektroden, die gegenüber der halbleitenden Schicht liegen.
KR1019880010526A KR970011766B1 (ko)	1987-08-24	1988-08-19	Mos 트랜지스터
CA000575400A CA1315421C (en)	1987-08-24	1988-08-23	Thin film mos transistor having pair of gate electrodes opposing across semiconductor layer
US07/601,003 US5140391A (en)	1987-08-24	1990-10-19	Thin film MOS transistor having pair of gate electrodes opposing across semiconductor layer

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62209816A JPS6453460A (en)	1987-08-24	1987-08-24	Mos transistor

Publications (1)

Publication Number	Publication Date
JPS6453460A true JPS6453460A (en)	1989-03-01

Family

ID=16579090

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62209816A Pending JPS6453460A (en)	1987-08-24	1987-08-24	Mos transistor

Country Status (5)

Country	Link
EP (1)	EP0304824B1 (ja)
JP (1)	JPS6453460A (ja)
KR (1)	KR970011766B1 (ja)
CA (1)	CA1315421C (ja)
DE (1)	DE3879323T2 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH06112491A (ja) *	1992-08-10	1994-04-22	Internatl Business Mach Corp <Ibm>	電界効果トランジスタ
US6340830B1 (en)	1992-06-09	2002-01-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for forming the same
US6501097B1 (en)	1994-04-29	2002-12-31	Semiconductor Energy Laboratory Co., Ltd.	Electro-optical device
US6835586B2 (en)	1998-12-25	2004-12-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US6914302B2 (en)	1998-12-18	2005-07-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US6982460B1 (en)	2000-07-07	2006-01-03	International Business Machines Corporation	Self-aligned gate MOSFET with separate gates
JP2006049928A (ja) *	2005-09-29	2006-02-16	Semiconductor Energy Lab Co Ltd	半導体装置
US8158980B2 (en)	2001-04-19	2012-04-17	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4984040A (en) *	1989-06-15	1991-01-08	Xerox Corporation	High voltage thin film transistor with second gate
US4984041A (en) *	1989-07-28	1991-01-08	Xerox Corporation	High voltage thin film transistor with second control electrode
US5173753A (en) *	1989-08-10	1992-12-22	Industrial Technology Research Institute	Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance
JPH0824193B2 (ja) *	1990-10-16	1996-03-06	工業技術院長	平板型光弁駆動用半導体装置の製造方法
US5420048A (en) *	1991-01-09	1995-05-30	Canon Kabushiki Kaisha	Manufacturing method for SOI-type thin film transistor
US5777364A (en) *	1992-11-30	1998-07-07	International Business Machines Corporation	Graded channel field effect transistor
US6576202B1 (en)	2000-04-21	2003-06-10	Kin-Chung Ray Chiu	Highly efficient compact capacitance coupled plasma reactor/generator and method
JP2019067938A (ja) *	2017-10-02	2019-04-25	シャープ株式会社	薄膜トランジスタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6094773A (ja) *	1983-10-27	1985-05-27	Agency Of Ind Science & Technol	電界効果トランジスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4422090A (en) *	1979-07-25	1983-12-20	Northern Telecom Limited	Thin film transistors
GB2064866A (en) *	1979-11-30	1981-06-17	Gen Electric Co Ltd	Field effect semiconductor device

1987
- 1987-08-24 JP JP62209816A patent/JPS6453460A/ja active Pending
1988
- 1988-08-19 DE DE88113531T patent/DE3879323T2/de not_active Expired - Lifetime
- 1988-08-19 EP EP88113531A patent/EP0304824B1/en not_active Expired - Lifetime
- 1988-08-19 KR KR1019880010526A patent/KR970011766B1/ko not_active IP Right Cessation
- 1988-08-23 CA CA000575400A patent/CA1315421C/en not_active Expired - Lifetime

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6094773A (ja) *	1983-10-27	1985-05-27	Agency Of Ind Science & Technol	電界効果トランジスタ

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6340830B1 (en)	1992-06-09	2002-01-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for forming the same
US6528852B2 (en)	1992-06-09	2003-03-04	Semiconductor Energy Laboratory Co., Ltd.	Double gated electronic device and method of forming the same
US6815772B2 (en)	1992-06-09	2004-11-09	Semiconductor Energy Laboratory Co., Ltd.	Dual gate MOSFET
JPH06112491A (ja) *	1992-08-10	1994-04-22	Internatl Business Mach Corp <Ibm>	電界効果トランジスタ
US6501097B1 (en)	1994-04-29	2002-12-31	Semiconductor Energy Laboratory Co., Ltd.	Electro-optical device
US7102164B2 (en)	1994-04-29	2006-09-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device having a conductive layer with a light shielding part
US6914302B2 (en)	1998-12-18	2005-07-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US6835586B2 (en)	1998-12-25	2004-12-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8643015B2 (en)	1998-12-28	2014-02-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US6982460B1 (en)	2000-07-07	2006-01-03	International Business Machines Corporation	Self-aligned gate MOSFET with separate gates
US7101762B2 (en)	2000-07-07	2006-09-05	International Business Machines Corporation	Self-aligned double gate mosfet with separate gates
US8158980B2 (en)	2001-04-19	2012-04-17	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
JP2006049928A (ja) *	2005-09-29	2006-02-16	Semiconductor Energy Lab Co Ltd	半導体装置

Also Published As

Publication number	Publication date
DE3879323D1 (de)	1993-04-22
KR970011766B1 (ko)	1997-07-15
EP0304824A3 (en)	1989-05-03
CA1315421C (en)	1993-03-30
DE3879323T2 (de)	1993-09-30
EP0304824B1 (en)	1993-03-17
EP0304824A2 (en)	1989-03-01
KR890004444A (ko)	1989-04-22

Publication	Publication Date	Title
JPS6453460A (en)	1989-03-01	Mos transistor
JPS6421967A (en)	1989-01-25	Semiconductor device and manufacture thereof
EP0342796A3 (en)	1990-05-16	Thin-film transistor
JPS6453459A (en)	1989-03-01	Mos transistor
JPS5736844A (en)	1982-02-27	Semiconductor device
JPS6465873A (en)	1989-03-13	Manufacture of semiconductor element
JPS6459866A (en)	1989-03-07	Manufacture of mos transistor
JPS6435961A (en)	1989-02-07	Thin film transistor
JPS61263273A (ja)	1986-11-21	薄膜半導体装置の製造方法
JPS56155531A (en)	1981-12-01	Manufacture of semiconductor device
JPS55107229A (en)	1980-08-16	Method of manufacturing semiconductor device
JPS6484659A (en)	1989-03-29	Manufacture of semiconductor device
JPS5717174A (en)	1982-01-28	Semiconductor device
JPS567482A (en)	1981-01-26	Manufacturing of semiconductor device
JPS6489457A (en)	1989-04-03	Manufacture of semiconductor device
JPS5773974A (en)	1982-05-08	Manufacture of most type semiconductor device
JPS5694671A (en)	1981-07-31	Manufacture of mis field-effect semiconductor device
JPS57194583A (en)	1982-11-30	Mos semiconductor device and manufacture thereof
JPS56105663A (en)	1981-08-22	Manufacture of ic device by complementary type field effect transistor
JPS6453576A (en)	1989-03-01	Semiconductor device
JPS5513953A (en)	1980-01-31	Complementary integrated circuit
JPS5748248A (en)	1982-03-19	Manufacture of semiconductor device
JPS64757A (en)	1989-01-05	Semiconductor device
JPS6449271A (en)	1989-02-23	Manufacture of thin-film transistor
JPS5656676A (en)	1981-05-18	Manufacture of mos integrated circuit of mutual compensation type