DE3686971D1 - Lateraler transistor mit isoliertem gate mit latch-up-festigkeit. - Google Patents

Lateraler transistor mit isoliertem gate mit latch-up-festigkeit.

Info

Publication number
DE3686971D1
DE3686971D1 DE8686116513T DE3686971T DE3686971D1 DE 3686971 D1 DE3686971 D1 DE 3686971D1 DE 8686116513 T DE8686116513 T DE 8686116513T DE 3686971 T DE3686971 T DE 3686971T DE 3686971 D1 DE3686971 D1 DE 3686971D1
Authority
DE
Germany
Prior art keywords
latch
strength
insulated gate
lateral transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686116513T
Other languages
English (en)
Other versions
DE3686971T2 (de
Inventor
Michael Stuart Adler
Deva Narayan Pattanayak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25185454&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3686971(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE3686971D1 publication Critical patent/DE3686971D1/de
Publication of DE3686971T2 publication Critical patent/DE3686971T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
DE8686116513T 1985-11-29 1986-11-27 Lateraler transistor mit isoliertem gate mit latch-up-festigkeit. Expired - Fee Related DE3686971T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/803,049 US4963951A (en) 1985-11-29 1985-11-29 Lateral insulated gate bipolar transistors with improved latch-up immunity

Publications (2)

Publication Number Publication Date
DE3686971D1 true DE3686971D1 (de) 1992-11-19
DE3686971T2 DE3686971T2 (de) 1993-04-29

Family

ID=25185454

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686116513T Expired - Fee Related DE3686971T2 (de) 1985-11-29 1986-11-27 Lateraler transistor mit isoliertem gate mit latch-up-festigkeit.

Country Status (4)

Country Link
US (1) US4963951A (de)
EP (1) EP0224269B1 (de)
JP (1) JPH0758784B2 (de)
DE (1) DE3686971T2 (de)

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US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
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US4926074A (en) * 1987-10-30 1990-05-15 North American Philips Corporation Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor
JP2513874B2 (ja) * 1989-12-28 1996-07-03 三菱電機株式会社 半導体装置およびその製造方法
US5258641A (en) * 1989-12-28 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
EP0497577B1 (de) * 1991-01-31 2002-07-17 Kabushiki Kaisha Toshiba Halbleiterbauelement für hohe Durchbruchsspannungen
US5072268A (en) * 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5428228A (en) * 1991-06-10 1995-06-27 Kabushiki Kaisha Toshiba Method of operating thyristor with insulated gates
EP0522712B1 (de) * 1991-06-10 1999-03-24 Kabushiki Kaisha Toshiba Thyristor mit isoliertem Gate
US5227653A (en) * 1991-08-07 1993-07-13 North American Philips Corp. Lateral trench-gate bipolar transistors
JPH05206469A (ja) * 1992-01-29 1993-08-13 Hitachi Ltd 絶縁ゲート型バイポーラトランジスタ
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
JPH08139319A (ja) * 1994-11-11 1996-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH08227999A (ja) * 1994-12-21 1996-09-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法
EP0761016B1 (de) * 1995-03-23 2002-10-16 Koninklijke Philips Electronics N.V. Halbleiteranordnung mit einem ligbt element
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
DE19725091B4 (de) * 1997-06-13 2004-09-02 Robert Bosch Gmbh Laterales Transistorbauelement und Verfahren zu seiner Herstellung
US6054365A (en) * 1998-07-13 2000-04-25 International Rectifier Corp. Process for filling deep trenches with polysilicon and oxide
DE19904103B4 (de) * 1999-02-02 2005-04-14 Infineon Technologies Ag IGBT mit verbesserter Durchlaßspannung
US6191453B1 (en) 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
US6413806B1 (en) * 2000-02-23 2002-07-02 Motorola, Inc. Semiconductor device and method for protecting such device from a reversed drain voltage
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6424007B1 (en) 2001-01-24 2002-07-23 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6555873B2 (en) * 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6573558B2 (en) * 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6635544B2 (en) * 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US7786533B2 (en) 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US7221011B2 (en) * 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
JP2004335990A (ja) * 2003-03-10 2004-11-25 Fuji Electric Device Technology Co Ltd Ｍｉｓ型半導体装置
JP4547872B2 (ja) * 2003-06-13 2010-09-22 日本ビクター株式会社 スイッチング素子の製造方法
KR100618775B1 (ko) * 2004-12-31 2006-08-31 동부일렉트로닉스 주식회사 반도체 소자
US7439584B2 (en) * 2005-05-19 2008-10-21 Freescale Semiconductor, Inc. Structure and method for RESURF LDMOSFET with a current diverter
US7466006B2 (en) * 2005-05-19 2008-12-16 Freescale Semiconductor, Inc. Structure and method for RESURF diodes with a current diverter
US7301220B2 (en) * 2005-05-20 2007-11-27 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
JP2007194575A (ja) * 2005-12-21 2007-08-02 Mitsubishi Electric Corp 半導体装置
US7465964B2 (en) * 2005-12-30 2008-12-16 Cambridge Semiconductor Limited Semiconductor device in which an injector region is isolated from a substrate
JP2008124421A (ja) * 2006-10-17 2008-05-29 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7531888B2 (en) * 2006-11-30 2009-05-12 Fairchild Semiconductor Corporation Integrated latch-up free insulated gate bipolar transistor
JP5191132B2 (ja) * 2007-01-29 2013-04-24 三菱電機株式会社 半導体装置
US7468536B2 (en) 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US7557406B2 (en) 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
CN100592532C (zh) * 2007-08-28 2010-02-24 电子科技大学 具有“u”字形漂移区的半导体器件
JP4767264B2 (ja) * 2008-01-15 2011-09-07 三菱電機株式会社 高耐圧半導体装置
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
WO2021230870A1 (en) * 2020-05-14 2021-11-18 Cummins Inc. Debounced solid state switching device

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US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
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US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
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US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
EP0273030A3 (de) * 1982-12-13 1988-09-21 General Electric Company Laterale Gleichrichter mit isoliertem Gate
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
JPS60196974A (ja) * 1984-03-19 1985-10-05 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
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Also Published As

Publication number Publication date
DE3686971T2 (de) 1993-04-29
US4963951A (en) 1990-10-16
JPS62189758A (ja) 1987-08-19
JPH0758784B2 (ja) 1995-06-21
EP0224269A2 (de) 1987-06-03
EP0224269B1 (de) 1992-10-14
EP0224269A3 (en) 1989-02-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HARRIS CORP., MELBOURNE, FLA., US

8339 Ceased/non-payment of the annual fee