DE3850567D1 - DRAM-Zelle mit verstärkter Ladung. - Google Patents

DRAM-Zelle mit verstärkter Ladung.

Info

Publication number
DE3850567D1
DE3850567D1 DE3850567T DE3850567T DE3850567D1 DE 3850567 D1 DE3850567 D1 DE 3850567D1 DE 3850567 T DE3850567 T DE 3850567T DE 3850567 T DE3850567 T DE 3850567T DE 3850567 D1 DE3850567 D1 DE 3850567D1
Authority
DE
Germany
Prior art keywords
dram cell
increased charge
charge
increased
dram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850567T
Other languages
English (en)
Other versions
DE3850567T2 (de
Inventor
Sheffield Eaton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Application granted granted Critical
Publication of DE3850567D1 publication Critical patent/DE3850567D1/de
Publication of DE3850567T2 publication Critical patent/DE3850567T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE3850567T 1988-04-22 1988-09-21 DRAM-Zelle mit verstärkter Ladung. Expired - Fee Related DE3850567T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18518588A 1988-04-22 1988-04-22

Publications (2)

Publication Number Publication Date
DE3850567D1 true DE3850567D1 (de) 1994-08-11
DE3850567T2 DE3850567T2 (de) 1994-11-03

Family

ID=22679954

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850567T Expired - Fee Related DE3850567T2 (de) 1988-04-22 1988-09-21 DRAM-Zelle mit verstärkter Ladung.

Country Status (4)

Country Link
EP (1) EP0338157B1 (de)
JP (1) JPH01278063A (de)
AU (1) AU598962B2 (de)
DE (1) DE3850567T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
KR950000156B1 (ko) * 1989-02-08 1995-01-10 세이꼬 엡슨 가부시끼가이샤 반도체 장치
EP0396221B1 (de) * 1989-05-05 1995-09-27 Ramtron International Corporation Integrierter ferro-elektrischer Kondensator
JPH03296262A (ja) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp 半導体メモリセル
JP3092140B2 (ja) * 1990-06-01 2000-09-25 セイコーエプソン株式会社 半導体装置の製造方法
JP3079542B2 (ja) * 1990-06-01 2000-08-21 セイコーエプソン株式会社 半導体装置の製造方法
US5369296A (en) * 1990-07-24 1994-11-29 Ramtron International Corporation Semiconductor device having a ferroelectric film in a through-hole
JPH0482266A (ja) * 1990-07-24 1992-03-16 Seiko Epson Corp 半導体装置、及びその製造方法
JP2601022B2 (ja) * 1990-11-30 1997-04-16 日本電気株式会社 半導体装置の製造方法
US5273927A (en) * 1990-12-03 1993-12-28 Micron Technology, Inc. Method of making a ferroelectric capacitor and forming local interconnect
EP0516031A1 (de) * 1991-05-29 1992-12-02 Ramtron International Corporation Ferroelektrische Stapelspeicherzelle und Herstellungsverfahren
JP2715736B2 (ja) * 1991-06-28 1998-02-18 日本電気株式会社 半導体装置の製造方法
WO1993012542A1 (en) * 1991-12-13 1993-06-24 Symetrix Corporation Layered superlattice material applications
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027209A (en) * 1975-10-02 1977-05-31 Sprague Electric Company Ceramic capacitor having a silver doped dielectric of (Pb,La)(Zr,Ti)O3
US4219834A (en) * 1977-11-11 1980-08-26 International Business Machines Corporation One-device monolithic random access memory and method of fabricating same
AU550282B2 (en) * 1981-01-26 1986-03-13 Matsushita Electric Industrial Co., Ltd. Porcelain composition having high dielectric onstant
AU548117B2 (en) * 1981-12-21 1985-11-21 Matsushita Electric Industrial Co., Ltd. High dielectric constant porcelain composition
US4853893A (en) * 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
US4893272A (en) * 1988-04-22 1990-01-09 Ramtron Corporation Ferroelectric retention method

Also Published As

Publication number Publication date
JPH01278063A (ja) 1989-11-08
AU2581788A (en) 1989-12-21
EP0338157A3 (en) 1990-03-28
DE3850567T2 (de) 1994-11-03
EP0338157A2 (de) 1989-10-25
AU598962B2 (en) 1990-07-05
EP0338157B1 (de) 1994-07-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee