DE3853182D1 - Speicherzelle mit gesättigtem schnellem Schreiben. - Google Patents

Speicherzelle mit gesättigtem schnellem Schreiben.

Info

Publication number
DE3853182D1
DE3853182D1 DE3853182T DE3853182T DE3853182D1 DE 3853182 D1 DE3853182 D1 DE 3853182D1 DE 3853182 T DE3853182 T DE 3853182T DE 3853182 T DE3853182 T DE 3853182T DE 3853182 D1 DE3853182 D1 DE 3853182D1
Authority
DE
Germany
Prior art keywords
memory cell
fast writing
saturated fast
saturated
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853182T
Other languages
English (en)
Other versions
DE3853182T2 (de
Inventor
William Benedict Chin
Ronald William Knepper
Rudolph Dennis Dussault
Friedric Christian Wernicke
Wong Robert Ch Foon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3853182D1 publication Critical patent/DE3853182D1/de
Publication of DE3853182T2 publication Critical patent/DE3853182T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE3853182T 1987-09-08 1988-07-12 Speicherzelle mit gesättigtem schnellem Schreiben. Expired - Fee Related DE3853182T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/094,465 US4922455A (en) 1987-09-08 1987-09-08 Memory cell with active device for saturation capacitance discharge prior to writing

Publications (2)

Publication Number Publication Date
DE3853182D1 true DE3853182D1 (de) 1995-04-06
DE3853182T2 DE3853182T2 (de) 1995-09-14

Family

ID=22245351

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853182T Expired - Fee Related DE3853182T2 (de) 1987-09-08 1988-07-12 Speicherzelle mit gesättigtem schnellem Schreiben.

Country Status (4)

Country Link
US (1) US4922455A (de)
EP (1) EP0306663B1 (de)
JP (1) JPS6472396A (de)
DE (1) DE3853182T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021849A (en) * 1989-10-30 1991-06-04 Motorola, Inc. Compact SRAM cell with polycrystalline silicon diode load
US5040145A (en) * 1990-04-06 1991-08-13 International Business Machines Corporation Memory cell with active write load
US5151387A (en) 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
WO2004084307A1 (en) * 2003-03-21 2004-09-30 Goran Krilic Single ended three transistor quasi-static ram cell
US8283198B2 (en) 2010-05-10 2012-10-09 Micron Technology, Inc. Resistive memory and methods of processing resistive memory
WO2015084971A1 (en) 2013-12-03 2015-06-11 Rambus Inc. Reduced current memory device

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3510849A (en) * 1965-08-09 1970-05-05 Nippon Electric Co Memory devices of the semiconductor type having high-speed readout means
US3585412A (en) * 1968-08-27 1971-06-15 Bell Telephone Labor Inc Schottky barrier diodes as impedance elements
US3703709A (en) * 1969-05-24 1972-11-21 Nippon Electric Co High speed associative memory circuits
US3671772A (en) * 1969-10-01 1972-06-20 Ibm Difference amplifier
US3849675A (en) * 1973-01-05 1974-11-19 Bell Telephone Labor Inc Low power flip-flop circuits
US3919566A (en) * 1973-12-26 1975-11-11 Motorola Inc Sense-write circuit for bipolar integrated circuit ram
US4057789A (en) * 1974-06-19 1977-11-08 International Business Machines Corporation Reference voltage source for memory cells
DE2457921C2 (de) * 1974-12-07 1976-12-09 Ibm Deutschland Verfahren und schaltungsanordnung zur erhoehung der schreibgeschwindigkeit in integrierten datenspeichern
FR2304991A1 (fr) * 1975-03-15 1976-10-15 Ibm Agencement de circuits pour memoire semi-conductrice et son procede de fonctionnement
US3969707A (en) * 1975-03-27 1976-07-13 International Business Machines Corporation Content-Addressable Memory capable of a high speed search
US4127899A (en) * 1977-12-05 1978-11-28 International Business Machines Corporation Self-quenching memory cell
JPS6057707B2 (ja) * 1978-01-25 1985-12-16 株式会社日立製作所 記憶回路
US4320312A (en) * 1978-10-02 1982-03-16 Hewlett-Packard Company Smaller memory cells and logic circuits
DE2926514A1 (de) * 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
NL7908340A (nl) * 1979-11-15 1981-06-16 Philips Nv Geheugencelinrichting voor statisch geheugen.
US4308595A (en) * 1979-12-19 1981-12-29 International Business Machines Corporation Array driver
US4439842A (en) * 1979-12-28 1984-03-27 International Business Machines Corp. Bipolar transistor read only or read-write store with low impedance sense amplifier
US4400712A (en) * 1981-02-13 1983-08-23 Bell Telephone Laboratories, Incorporated Static bipolar random access memory
JPS6052520B2 (ja) * 1981-12-29 1985-11-19 富士通株式会社 半導体記憶装置
JPS58147889A (ja) * 1982-02-26 1983-09-02 Mitsubishi Electric Corp 半導体装置
US4675715A (en) * 1982-12-09 1987-06-23 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor integrated circuit vertical geometry impedance element
US4575821A (en) * 1983-05-09 1986-03-11 Rockwell International Corporation Low power, high speed random access memory circuit
EP0139804B1 (de) * 1983-10-28 1988-06-15 International Business Machines Corporation Vorrichtung zum Speichern und Lesen eines Informationsbits
JPS60143496A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd 半導体記憶装置
US4598390A (en) * 1984-06-25 1986-07-01 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4635228A (en) * 1984-12-17 1987-01-06 International Business Machines Corporation Random access memory employing unclamped complementary transistor switch (CTS) memory cells and utilizing word to drain line diode shunts
JPS62130000A (ja) * 1985-11-30 1987-06-12 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0306663A2 (de) 1989-03-15
DE3853182T2 (de) 1995-09-14
EP0306663A3 (de) 1991-01-16
JPH0529993B2 (de) 1993-05-06
JPS6472396A (en) 1989-03-17
EP0306663B1 (de) 1995-03-01
US4922455A (en) 1990-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee