DE3750872T2 - Nichtflüchtige speicherzelle. - Google Patents

Nichtflüchtige speicherzelle.

Info

Publication number
DE3750872T2
DE3750872T2 DE3750872T DE3750872T DE3750872T2 DE 3750872 T2 DE3750872 T2 DE 3750872T2 DE 3750872 T DE3750872 T DE 3750872T DE 3750872 T DE3750872 T DE 3750872T DE 3750872 T2 DE3750872 T2 DE 3750872T2
Authority
DE
Germany
Prior art keywords
nonvatile
storage cell
cell
storage
nonvatile storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750872T
Other languages
English (en)
Other versions
DE3750872D1 (de
Inventor
James Topich
Raymond Turi
George Lockwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
NCR International Inc
Original Assignee
AT&T Global Information Solutions Co
AT&T Global Information Solutions International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Global Information Solutions Co, AT&T Global Information Solutions International Inc filed Critical AT&T Global Information Solutions Co
Publication of DE3750872D1 publication Critical patent/DE3750872D1/de
Application granted granted Critical
Publication of DE3750872T2 publication Critical patent/DE3750872T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE3750872T 1986-09-08 1987-09-03 Nichtflüchtige speicherzelle. Expired - Fee Related DE3750872T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/904,586 US4748593A (en) 1986-09-08 1986-09-08 High speed nonvolatile memory cell
PCT/US1987/002203 WO1988002173A2 (en) 1986-09-08 1987-09-03 Nonvolatile memory cell

Publications (2)

Publication Number Publication Date
DE3750872D1 DE3750872D1 (de) 1995-01-26
DE3750872T2 true DE3750872T2 (de) 1995-07-27

Family

ID=25419391

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750872T Expired - Fee Related DE3750872T2 (de) 1986-09-08 1987-09-03 Nichtflüchtige speicherzelle.

Country Status (5)

Country Link
US (1) US4748593A (de)
EP (1) EP0282528B1 (de)
JP (1) JP2654435B2 (de)
DE (1) DE3750872T2 (de)
WO (1) WO1988002173A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8907045D0 (en) * 1989-03-29 1989-05-10 Hughes Microelectronics Ltd Sense amplifier
US5051951A (en) * 1989-11-06 1991-09-24 Carnegie Mellon University Static RAM memory cell using N-channel MOS transistors
US5168464A (en) * 1989-11-29 1992-12-01 Ncr Corporation Nonvolatile differential memory device and method
US7439567B2 (en) * 2006-08-09 2008-10-21 Atmel Corporation Contactless nonvolatile memory array
KR100812520B1 (ko) * 2007-02-06 2008-03-11 매그나칩 반도체 유한회사 반도체 메모리 장치
US7968926B2 (en) * 2007-12-19 2011-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Logic non-volatile memory cell with improved data retention ability
US8472246B2 (en) * 2011-03-21 2013-06-25 Skymedi Corporation Method of programming a multi-bit per cell non-volatile memory
CN104347114B (zh) * 2013-07-26 2018-04-03 珠海艾派克微电子有限公司 非易失性存储单元和存储器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
GB2063601B (en) * 1979-11-12 1984-02-29 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
US4348745A (en) * 1980-10-27 1982-09-07 Hughes Aircraft Company Non-volatile random access memory having non-inverted storage
US4467451A (en) * 1981-12-07 1984-08-21 Hughes Aircraft Company Nonvolatile random access memory cell
US4408303A (en) * 1981-12-28 1983-10-04 Mostek Corporation Directly-coupled and capacitively coupled nonvolatile static RAM cell
US4571704A (en) * 1984-02-17 1986-02-18 Hughes Aircraft Company Nonvolatile latch

Also Published As

Publication number Publication date
DE3750872D1 (de) 1995-01-26
EP0282528B1 (de) 1994-12-14
JPH01500704A (ja) 1989-03-09
JP2654435B2 (ja) 1997-09-17
US4748593A (en) 1988-05-31
EP0282528A1 (de) 1988-09-21
WO1988002173A3 (en) 1988-05-19
WO1988002173A2 (en) 1988-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN

8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8328 Change in the person/name/address of the agent

Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN

8339 Ceased/non-payment of the annual fee
8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US