DE3787848D1 - Halbleiterdiode. - Google Patents
Halbleiterdiode.Info
- Publication number
- DE3787848D1 DE3787848D1 DE87201403T DE3787848T DE3787848D1 DE 3787848 D1 DE3787848 D1 DE 3787848D1 DE 87201403 T DE87201403 T DE 87201403T DE 3787848 T DE3787848 T DE 3787848T DE 3787848 D1 DE3787848 D1 DE 3787848D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor diode
- diode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08619425A GB2193596A (en) | 1986-08-08 | 1986-08-08 | A semiconductor diode |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3787848D1 true DE3787848D1 (de) | 1993-11-25 |
DE3787848T2 DE3787848T2 (de) | 1994-04-14 |
Family
ID=10602468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87201403T Expired - Fee Related DE3787848T2 (de) | 1986-08-08 | 1987-07-22 | Halbleiterdiode. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4825266A (de) |
EP (1) | EP0255971B1 (de) |
JP (1) | JP2554093B2 (de) |
DE (1) | DE3787848T2 (de) |
GB (1) | GB2193596A (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4951101A (en) * | 1988-08-25 | 1990-08-21 | Micrel Incorporated | Diamond shorting contact for semiconductors |
US5155568A (en) * | 1989-04-14 | 1992-10-13 | Hewlett-Packard Company | High-voltage semiconductor device |
US4927772A (en) * | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
GB2237930A (en) * | 1989-11-01 | 1991-05-15 | Philips Electronic Associated | A semiconductor device and method of manufacturing a semiconductor device |
DE4423619A1 (de) * | 1994-07-06 | 1996-01-11 | Bosch Gmbh Robert | Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung |
FR2753837B1 (fr) * | 1996-09-25 | 1999-01-29 | Composant de protection a retournement bidirectionnel a claquage en surface | |
GB2354879B (en) * | 1999-08-11 | 2004-05-12 | Mitel Semiconductor Ltd | A semiconductor device |
JP2002184952A (ja) * | 2000-12-15 | 2002-06-28 | Shindengen Electric Mfg Co Ltd | 半導体装置、半導体装置の製造方法 |
JP5195186B2 (ja) * | 2008-09-05 | 2013-05-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
RU167444U1 (ru) * | 2016-06-30 | 2017-01-10 | Акционерное общество "Государственный завод "Пульсар" | Мощный диод |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3577043A (en) * | 1967-12-07 | 1971-05-04 | United Aircraft Corp | Mosfet with improved voltage breakdown characteristics |
GB1276791A (en) * | 1969-01-22 | 1972-06-07 | Tokyo Shibaura Electric Co | Semiconductor device |
DE1920397A1 (de) * | 1969-04-22 | 1970-11-12 | Siemens Ag | Stabilisiertes Halbleiterbauelement |
US3890698A (en) * | 1971-11-01 | 1975-06-24 | Motorola Inc | Field shaping layer for high voltage semiconductors |
SE414357B (sv) * | 1978-08-17 | 1980-07-21 | Asea Ab | Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp |
DE2846637A1 (de) * | 1978-10-11 | 1980-04-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen |
SE423946B (sv) * | 1980-10-08 | 1982-06-14 | Asea Ab | Tyristor anordnad for sjelvtendning |
US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
GB2113907B (en) * | 1981-12-22 | 1986-03-19 | Texas Instruments Ltd | Reverse-breakdown pn junction devices |
GB2131603B (en) * | 1982-12-03 | 1985-12-18 | Philips Electronic Associated | Semiconductor devices |
FR2566963B1 (fr) * | 1984-06-29 | 1987-03-06 | Silicium Semiconducteur Ssc | Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite |
SE455552B (sv) * | 1985-02-26 | 1988-07-18 | Asea Ab | Halvledaranordning innefattande en overspenningsskyddskrets |
-
1986
- 1986-08-08 GB GB08619425A patent/GB2193596A/en not_active Withdrawn
-
1987
- 1987-07-02 US US07/072,196 patent/US4825266A/en not_active Expired - Lifetime
- 1987-07-22 DE DE87201403T patent/DE3787848T2/de not_active Expired - Fee Related
- 1987-07-22 EP EP87201403A patent/EP0255971B1/de not_active Expired - Lifetime
- 1987-08-06 JP JP62195390A patent/JP2554093B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2193596A (en) | 1988-02-10 |
JPS6343371A (ja) | 1988-02-24 |
EP0255971B1 (de) | 1993-10-20 |
US4825266A (en) | 1989-04-25 |
EP0255971A2 (de) | 1988-02-17 |
EP0255971A3 (en) | 1988-07-20 |
DE3787848T2 (de) | 1994-04-14 |
JP2554093B2 (ja) | 1996-11-13 |
GB8619425D0 (en) | 1986-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |