DE3686753D1 - Lichtemittierendes halbleiterelement. - Google Patents

Lichtemittierendes halbleiterelement.

Info

Publication number: DE3686753D1
Authority: DE; Germany
Prior art keywords: light; semiconductor element; emitting semiconductor; emitting; semiconductor
Prior art date: 1985-09-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8686307386T

Other languages

English (en)

Other versions

DE3686753T2 (de

Inventor

Katsuyuki Naito

Masayoshi Okamoto

Koichi Mizushima

Toshio Nakayama

Masami Sugiuchi

Akira Miura

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-09-30

Filing date

1986-09-25

Publication date

1992-10-22

1986-04-25 Priority claimed from JP61096388A external-priority patent/JPS62174981A/ja

1986-09-25 Application filed by Toshiba Corp filed Critical Toshiba Corp

1992-10-22 Publication of DE3686753D1 publication Critical patent/DE3686753D1/de

1993-02-18 Application granted granted Critical

1993-02-18 Publication of DE3686753T2 publication Critical patent/DE3686753T2/de

2006-09-26 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0033—Devices characterised by their operation having Schottky barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/701—Langmuir Blodgett films
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/653—Aromatic compounds comprising a hetero atom comprising only oxygen as heteroatom
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Spectroscopy & Molecular Physics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Optics & Photonics (AREA)
Luminescent Compositions (AREA)
Electroluminescent Light Sources (AREA)

DE8686307386T 1985-09-30 1986-09-25 Lichtemittierendes halbleiterelement. Expired - Lifetime DE3686753T2 (de)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
JP21455285		1985-09-30
JP21455185		1985-09-30
JP21455985		1985-09-30
JP21455085		1985-09-30
JP61096388A JPS62174981A (ja)	1985-09-30	1986-04-25	半導体発光素子

Publications (2)

Publication Number	Publication Date
DE3686753D1 true DE3686753D1 (de)	1992-10-22
DE3686753T2 DE3686753T2 (de)	1993-02-18

Family

ID=27525785

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8686307386T Expired - Lifetime DE3686753T2 (de)	1985-09-30	1986-09-25	Lichtemittierendes halbleiterelement.

Country Status (3)

Country	Link
US (1)	US4819057A (de)
EP (1)	EP0218422B1 (de)
DE (1)	DE3686753T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5140385A (en) *	1987-03-27	1992-08-18	Misawa Co., Ltd.	Light emitting element and method of manufacture
JPH02278723A (ja) *	1989-04-19	1990-11-15	Mitsubishi Electric Corp	半導体装置およびその製造方法
EP0443861B2 (de) *	1990-02-23	2008-05-28	Sumitomo Chemical Company, Limited	Organisch elektrolumineszente Vorrichtung
JPH03262170A (ja) *	1990-03-13	1991-11-21	Toshiba Corp	有機／無機接合型半導体素子
US5331182A (en) *	1990-08-08	1994-07-19	Matsushita Electric Industrial Co., Ltd.	Organic light emitting device and preparation and use thereof
US5633192A (en) *	1991-03-18	1997-05-27	Boston University	Method for epitaxially growing gallium nitride layers
US6953703B2 (en) *	1991-03-18	2005-10-11	The Trustees Of Boston University	Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
EP0576566B1 (de) *	1991-03-18	1999-05-26	Trustees Of Boston University	Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid
US5300807A (en) *	1992-01-22	1994-04-05	The United States Of America As Represented By The Secretary Of The Army	Thin film detector and method of manufacture
US5939418A (en) *	1995-12-21	1999-08-17	The Dupont Merck Pharmaceutical Company	Isoxazoline, isothiazoline and pyrazoline factor Xa inhibitors
DE19632627A1 (de) *	1996-08-13	1998-02-19	Siemens Ag	Verfahren zum Herstellen eines Licht aussendenden und/oder empfangenden Halbleiterkörpers
CN1643105A (zh)	2002-03-15	2005-07-20	出光兴产株式会社	有机电致发光装置用材料以及使用这种材料制备的有机电致发光装置
US9287512B2 (en)	2011-03-08	2016-03-15	Rohm And Haas Electronic Materials Korea Ltd.	Organic electroluminescent compounds, layers and organic electroluminescent device using the same
CN104130189B (zh) *	2014-07-11	2017-01-18	四川理工学院	吡唑啉衍生物及作为金属酸洗缓蚀剂的应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2017942A1 (de) *	1969-05-13	1970-05-29	Eastman Kodak Co
GB1572181A (en) *	1975-08-18	1980-07-23	Ici Ltd	Device comprising a thin film of organic materila
JPS61219185A (ja) *	1985-03-26	1986-09-29	Toshiba Corp	発光素子
JPS6276576A (ja) *	1985-09-30	1987-04-08	Toshiba Corp	注入型発光素子
JPH06276576A (ja) *	1993-03-22	1994-09-30	Fujitsu Ten Ltd	機器制御システム

1986
- 1986-09-25 DE DE8686307386T patent/DE3686753T2/de not_active Expired - Lifetime
- 1986-09-25 EP EP86307386A patent/EP0218422B1/de not_active Expired - Lifetime
- 1986-09-25 US US06/911,371 patent/US4819057A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0218422A3 (en)	1989-11-15
US4819057A (en)	1989-04-04
EP0218422A2 (de)	1987-04-15
EP0218422B1 (de)	1992-09-16
DE3686753T2 (de)	1993-02-18

Legal Events

Date	Code	Title	Description
1993-10-14	8364	No opposition during term of opposition
1999-08-26	8320	Willingness to grant licences declared (paragraph 23)

Publication	Publication Date	Title
DE3684557D1 (de)	1992-04-30	Waferintegrierte halbleiteranordnung.
DE3683316D1 (de)	1992-02-20	Halbleiteranordnung.
DE3650012D1 (de)	1994-09-08	Halbleitervorrichtung.
DE3685612D1 (de)	1992-07-16	Mehrschicht-halbleiteranordnung.
DE3679108D1 (de)	1991-06-13	Halbleiteranordnungen.
DE3683492D1 (de)	1992-02-27	Reinraum.
DE3671570D1 (de)	1990-06-28	Soi-typ-halbleiteranordnung.
NL189326C (nl)	1993-03-01	Halfgeleiderinrichting.
DE3676867D1 (de)	1991-02-21	Halbleiterlaser.
DE3688064D1 (de)	1993-04-22	Halbleitervorrichtung.
DE3667879D1 (de)	1990-02-01	Halbleiteranordnung.
DE3674959D1 (de)	1990-11-22	Halbleiterlaser.
FI873829A0 (fi)	1987-09-04	Sähköluminoiva elementti
DE3680774D1 (de)	1991-09-12	Integriertes halbleiterbauelement.
DE3582804D1 (de)	1991-06-13	Lichtemittierende halbleiterschaltung.
DE3684184D1 (de)	1992-04-16	Verkapselte halbleiteranordnung.
DE3687102D1 (de)	1992-12-17	Halbleiterlaser.
DE3682421D1 (de)	1991-12-19	Feldeffekt-halbleiteranordnung.
DE3578722D1 (de)	1990-08-23	Lichtemittierendes halbleiterelement mit sperrschicht.
DE3688002D1 (de)	1993-04-22	Halbleiter-laser.
DE3686490D1 (de)	1992-10-01	Halbleiterstruktur.
DE3680265D1 (de)	1991-08-22	Halbleiterschaltungsanordnung.
DE3687025D1 (de)	1992-12-03	Halbleiterschalter.
DE3686753D1 (de)	1992-10-22	Lichtemittierendes halbleiterelement.
DE3688490D1 (de)	1993-07-01	Lumineszentes halbleiterelement.