JPS5698889A - Ingaasp semiconductor laser - Google Patents

Ingaasp semiconductor laser

Info

Publication number
JPS5698889A
JPS5698889A JP88780A JP88780A JPS5698889A JP S5698889 A JPS5698889 A JP S5698889A JP 88780 A JP88780 A JP 88780A JP 88780 A JP88780 A JP 88780A JP S5698889 A JPS5698889 A JP S5698889A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor laser
buffer area
different composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP88780A
Other languages
Japanese (ja)
Inventor
Shigeyuki Akiba
Kazuo Sakai
Yuichi Matsushima
Akiya Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP88780A priority Critical patent/JPS5698889A/en
Publication of JPS5698889A publication Critical patent/JPS5698889A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain stabilized lateral mode oscillation, by forming on the active layer the buffer area that has the greater forbidden band and forming the neighboring clad layer with the different composition from the stripe oscillation region. CONSTITUTION:On the N type InP substrate 1, the N type InP layer 2 and the N type or P type InGaAs active layer are epitaxially grown in liquid phase. Further on this, P type InGaAs buffer area 4, the P type InP layer 5 and the P type InGaAsP layer 6 are stacked, and become In1-XGaXAsYP1-Y (0<=Y<=1,0.42Y<=X<= 0.5Y) hetero-junction semiconductor laser. Next, with the mask SiO2 7 etching is made up to the layer 5 and the strip oscillation region is formed. Again the epitaxial growth is made to fill both sides of it with N type InGaAsP layer 10 that has the different composition from the layer 5 and 6 and has the smaller forbidden band tnan the Layer 5. Thus the laser can be obtained capable to operate continuously at the room temperature at the wave length band of 1.5-1.6mum.
JP88780A 1980-01-10 1980-01-10 Ingaasp semiconductor laser Pending JPS5698889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP88780A JPS5698889A (en) 1980-01-10 1980-01-10 Ingaasp semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP88780A JPS5698889A (en) 1980-01-10 1980-01-10 Ingaasp semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5698889A true JPS5698889A (en) 1981-08-08

Family

ID=11486178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP88780A Pending JPS5698889A (en) 1980-01-10 1980-01-10 Ingaasp semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5698889A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0209387A2 (en) * 1985-07-18 1987-01-21 Sharp Kabushiki Kaisha Semiconductor laser device
JPS62221177A (en) * 1986-03-24 1987-09-29 Fujikura Ltd Distributed reflection semiconductor laser
DE19725809A1 (en) * 1997-06-18 1998-12-24 Laserspec Analytik Gmbh Light emitting semiconductor heterostructure especially for laser diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0209387A2 (en) * 1985-07-18 1987-01-21 Sharp Kabushiki Kaisha Semiconductor laser device
US4899349A (en) * 1985-07-18 1990-02-06 Sharp Kabushiki Kaisha Semiconductor laser device
JPS62221177A (en) * 1986-03-24 1987-09-29 Fujikura Ltd Distributed reflection semiconductor laser
DE19725809A1 (en) * 1997-06-18 1998-12-24 Laserspec Analytik Gmbh Light emitting semiconductor heterostructure especially for laser diode
DE19725809C2 (en) * 1997-06-18 1999-07-22 Laserspec Analytik Gmbh Light-emitting semiconductor component and its use

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