DE3676867D1 - Halbleiterlaser. - Google Patents
Halbleiterlaser.Info
- Publication number
- DE3676867D1 DE3676867D1 DE8686303570T DE3676867T DE3676867D1 DE 3676867 D1 DE3676867 D1 DE 3676867D1 DE 8686303570 T DE8686303570 T DE 8686303570T DE 3676867 T DE3676867 T DE 3676867T DE 3676867 D1 DE3676867 D1 DE 3676867D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
- H01S5/2013—MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/733,357 US4731789A (en) | 1985-05-13 | 1985-05-13 | Clad superlattice semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3676867D1 true DE3676867D1 (de) | 1991-02-21 |
Family
ID=24947282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686303570T Expired - Fee Related DE3676867D1 (de) | 1985-05-13 | 1986-05-12 | Halbleiterlaser. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4731789A (de) |
EP (1) | EP0202089B1 (de) |
JP (1) | JPS61264780A (de) |
DE (1) | DE3676867D1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4786951A (en) * | 1985-02-12 | 1988-11-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical element and a process for producing the same |
US4771010A (en) * | 1986-11-21 | 1988-09-13 | Xerox Corporation | Energy beam induced layer disordering (EBILD) |
JPS63150986A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
JP2531655B2 (ja) * | 1987-01-16 | 1996-09-04 | 株式会社日立製作所 | 半導体装置 |
JPH0727873B2 (ja) * | 1987-11-04 | 1995-03-29 | 三菱電機株式会社 | 化合物半導体へのSi拡散方法 |
JPH01143285A (ja) * | 1987-11-28 | 1989-06-05 | Mitsubishi Electric Corp | 半導体超格子の無秩序化方法及び半導体レーザ装置 |
JPH01241192A (ja) * | 1988-03-23 | 1989-09-26 | Fujitsu Ltd | 半導体装置 |
US4817102A (en) * | 1988-04-18 | 1989-03-28 | Maurer Larry D | Acousto-electromagnetic hologistic resonant system |
US4987468A (en) * | 1988-06-17 | 1991-01-22 | Xerox Corporation | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
US5164797A (en) * | 1988-06-17 | 1992-11-17 | Xerox Corporation | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
US4870652A (en) * | 1988-07-08 | 1989-09-26 | Xerox Corporation | Monolithic high density arrays of independently addressable semiconductor laser sources |
GB2223351A (en) * | 1988-09-28 | 1990-04-04 | Philips Electronic Associated | A method of manufacturing a semiconductor device having waveguide structure |
US5031185A (en) * | 1988-11-17 | 1991-07-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a disordered superlattice |
US5219785A (en) * | 1989-01-27 | 1993-06-15 | Spectra Diode Laboratories, Inc. | Method of forming current barriers in semiconductor lasers |
US5193098A (en) * | 1989-01-27 | 1993-03-09 | Spectra Diode Laboratories, Inc. | Method of forming current barriers in semiconductor lasers |
US4980893A (en) * | 1989-05-25 | 1990-12-25 | Xerox Corporation | Monolithic high density arrays of independently addressable offset semiconductor laser sources |
US5007063A (en) * | 1990-02-12 | 1991-04-09 | Eastman Kodak Company | Laser diode |
US4977572A (en) * | 1990-03-29 | 1990-12-11 | The United States Of America As Represented By The Department Of Energy | Resonantly photo-pumped nickel-like erbium X-ray laser |
US5081633A (en) * | 1990-05-31 | 1992-01-14 | Applied Solar Energy Corporation | Semiconductor laser diode |
US5138626A (en) * | 1990-09-12 | 1992-08-11 | Hughes Aircraft Company | Ridge-waveguide buried-heterostructure laser and method of fabrication |
CA2055208C (en) * | 1990-11-09 | 2000-07-04 | Michinori Irikawa | A quatum barrier semiconductor optical device |
US5212705A (en) * | 1992-02-18 | 1993-05-18 | Eastman Kodak Company | AlAS Zn-stop diffusion layer in AlGaAs laser diodes |
JPH0629621A (ja) * | 1992-07-09 | 1994-02-04 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US5301202A (en) * | 1993-02-25 | 1994-04-05 | International Business Machines, Corporation | Semiconductor ridge waveguide laser with asymmetrical cladding |
JPH0786678A (ja) * | 1993-05-31 | 1995-03-31 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US5400354A (en) * | 1994-02-08 | 1995-03-21 | Ludowise; Michael | Laminated upper cladding structure for a light-emitting device |
GB2298735A (en) * | 1995-03-08 | 1996-09-11 | Sharp Kk | Semiconductor device having a miniband |
SE506651C2 (sv) * | 1996-02-27 | 1998-01-26 | Ericsson Telefon Ab L M | Begravd heterostruktur |
JP3986169B2 (ja) * | 1998-07-09 | 2007-10-03 | 沖電気工業株式会社 | 半導体発光装置 |
US6489635B1 (en) * | 1999-03-01 | 2002-12-03 | Sensors Unlimited | Epitaxially grown p-type diffusion source for photodiode fabrication |
JP2001068789A (ja) * | 1999-08-26 | 2001-03-16 | Fuji Photo Film Co Ltd | 半導体レーザ |
JP2002111052A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体発光素子及びその製造方法 |
US6878959B2 (en) * | 2002-11-22 | 2005-04-12 | Agilent Technologies, Inc. | Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice |
GB0306279D0 (en) * | 2003-03-19 | 2003-04-23 | Bookham Technology Plc | High power semiconductor laser with large optical superlattice waveguide |
DE10324862A1 (de) * | 2003-05-05 | 2005-03-03 | Dirr, Josef, Dipl.-Ing. (FH) | Verfahren zur Verschlüsselung digitalisierter Information |
US20050201437A1 (en) * | 2004-03-15 | 2005-09-15 | Benoit Reid | Semiconductor laser |
EP3776073A1 (de) * | 2018-04-12 | 2021-02-17 | Atomera Incorporated | Halbleiterbauelement und verfahren mit vertikal integrierten optischen und elektronischen vorrichtungen und mit einem übergitter |
FR3120473B1 (fr) * | 2021-03-05 | 2023-12-22 | 3Sp Tech | Dispositif opto-électronique à semi-conducteurs |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4205329A (en) * | 1976-03-29 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Periodic monolayer semiconductor structures grown by molecular beam epitaxy |
US4184171A (en) * | 1978-07-05 | 1980-01-15 | Bell Telephone Laboratories, Incorporated | Light emitting diodes which emit in the infrared |
US4378255A (en) * | 1981-05-06 | 1983-03-29 | University Of Illinois Foundation | Method for producing integrated semiconductor light emitter |
JPS58207684A (ja) * | 1982-05-28 | 1983-12-03 | Nippon Telegr & Teleph Corp <Ntt> | ダブルヘテロ接合型半導体発光装置 |
JPS6079785A (ja) * | 1983-10-06 | 1985-05-07 | Agency Of Ind Science & Technol | 半導体レ−ザ装置 |
-
1985
- 1985-05-13 US US06/733,357 patent/US4731789A/en not_active Expired - Fee Related
-
1986
- 1986-05-02 JP JP61102938A patent/JPS61264780A/ja active Pending
- 1986-05-12 EP EP86303570A patent/EP0202089B1/de not_active Expired - Lifetime
- 1986-05-12 DE DE8686303570T patent/DE3676867D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4731789A (en) | 1988-03-15 |
EP0202089A2 (de) | 1986-11-20 |
EP0202089B1 (de) | 1991-01-16 |
JPS61264780A (ja) | 1986-11-22 |
EP0202089A3 (en) | 1988-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |