DE3687102D1 - Halbleiterlaser. - Google Patents
Halbleiterlaser.Info
- Publication number
- DE3687102D1 DE3687102D1 DE8686111185T DE3687102T DE3687102D1 DE 3687102 D1 DE3687102 D1 DE 3687102D1 DE 8686111185 T DE8686111185 T DE 8686111185T DE 3687102 T DE3687102 T DE 3687102T DE 3687102 D1 DE3687102 D1 DE 3687102D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60206444A JPS6267890A (ja) | 1985-09-20 | 1985-09-20 | 半導体レ−ザ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3687102D1 true DE3687102D1 (de) | 1992-12-17 |
DE3687102T2 DE3687102T2 (de) | 1993-03-25 |
Family
ID=16523474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686111185T Expired - Fee Related DE3687102T2 (de) | 1985-09-20 | 1986-08-12 | Halbleiterlaser. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4752934A (de) |
EP (1) | EP0215298B1 (de) |
JP (1) | JPS6267890A (de) |
KR (1) | KR900000022B1 (de) |
DE (1) | DE3687102T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4786951A (en) * | 1985-02-12 | 1988-11-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical element and a process for producing the same |
DE3788841T2 (de) * | 1986-10-07 | 1994-05-05 | Sharp Kk | Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben. |
JPS63144589A (ja) * | 1986-12-09 | 1988-06-16 | Sharp Corp | 半導体レ−ザ素子 |
JPS63150986A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
JPS63150985A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
JPS63177495A (ja) * | 1987-01-16 | 1988-07-21 | Sharp Corp | 半導体レ−ザ素子 |
JPS63208296A (ja) * | 1987-02-24 | 1988-08-29 | Sharp Corp | 半導体装置 |
JPS63271992A (ja) * | 1987-04-28 | 1988-11-09 | Sharp Corp | 半導体レ−ザ素子 |
JPS63287082A (ja) * | 1987-05-19 | 1988-11-24 | Sharp Corp | 半導体レ−ザ素子 |
JPS63299186A (ja) * | 1987-05-29 | 1988-12-06 | Hitachi Ltd | 発光素子 |
JPH0775265B2 (ja) * | 1988-02-02 | 1995-08-09 | 三菱電機株式会社 | 半導体レーザおよびその製造方法 |
US5164797A (en) * | 1988-06-17 | 1992-11-17 | Xerox Corporation | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
US4987468A (en) * | 1988-06-17 | 1991-01-22 | Xerox Corporation | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
US4873696A (en) * | 1988-10-31 | 1989-10-10 | The Regents Of The University Of California | Surface-emitting lasers with periodic gain and a parallel driven nipi structure |
JPH0777278B2 (ja) * | 1988-12-09 | 1995-08-16 | 三菱電機株式会社 | 半導体レーザおよびその製造方法 |
JPH02196486A (ja) * | 1989-01-24 | 1990-08-03 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
US5063569A (en) * | 1990-12-19 | 1991-11-05 | At&T Bell Laboratories | Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces |
JPH04291304A (ja) * | 1991-03-20 | 1992-10-15 | Fujitsu Ltd | 光導波路および光信号の制御方法 |
US5406574A (en) * | 1991-10-23 | 1995-04-11 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
JP2677232B2 (ja) * | 1995-02-23 | 1997-11-17 | 日本電気株式会社 | 長波長半導体レーザおよびその製造方法 |
US5661740A (en) * | 1996-04-16 | 1997-08-26 | The United States Of America As Represented By The Secretary Of The Army | TEM mode quantum wire or well structure |
US6369403B1 (en) * | 1999-05-27 | 2002-04-09 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5511371A (en) * | 1978-07-10 | 1980-01-26 | Mitsubishi Electric Corp | Semiconductor laser system |
US4511408A (en) * | 1982-04-22 | 1985-04-16 | The Board Of Trustees Of The University Of Illinois | Semiconductor device fabrication with disordering elements introduced into active region |
US4594603A (en) * | 1982-04-22 | 1986-06-10 | Board Of Trustees Of The University Of Illinois | Semiconductor device with disordered active region |
JPS58225680A (ja) * | 1982-06-23 | 1983-12-27 | Nec Corp | 半導体レ−ザ |
JPS5944797B2 (ja) * | 1982-07-28 | 1984-11-01 | 工業技術院長 | 半導体レ−ザ装置の製造方法 |
JPS5923584A (ja) * | 1982-07-29 | 1984-02-07 | Nec Corp | 半導体レ−ザ |
JPS607789A (ja) * | 1983-06-28 | 1985-01-16 | Agency Of Ind Science & Technol | プレ−ナ型半導体発光装置 |
NL8304008A (nl) * | 1983-11-22 | 1985-06-17 | Philips Nv | Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling. |
-
1985
- 1985-09-20 JP JP60206444A patent/JPS6267890A/ja active Pending
-
1986
- 1986-07-28 KR KR1019860006144A patent/KR900000022B1/ko not_active IP Right Cessation
- 1986-08-12 EP EP86111185A patent/EP0215298B1/de not_active Expired - Lifetime
- 1986-08-12 DE DE8686111185T patent/DE3687102T2/de not_active Expired - Fee Related
- 1986-08-20 US US06/898,199 patent/US4752934A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR870003593A (ko) | 1987-04-18 |
DE3687102T2 (de) | 1993-03-25 |
EP0215298A3 (en) | 1990-01-24 |
US4752934A (en) | 1988-06-21 |
EP0215298B1 (de) | 1992-11-11 |
KR900000022B1 (ko) | 1990-01-18 |
JPS6267890A (ja) | 1987-03-27 |
EP0215298A2 (de) | 1987-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |