DE3688002D1 - Halbleiter-laser. - Google Patents
Halbleiter-laser.Info
- Publication number
- DE3688002D1 DE3688002D1 DE8686304023T DE3688002T DE3688002D1 DE 3688002 D1 DE3688002 D1 DE 3688002D1 DE 8686304023 T DE8686304023 T DE 8686304023T DE 3688002 T DE3688002 T DE 3688002T DE 3688002 D1 DE3688002 D1 DE 3688002D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/739,805 US4694459A (en) | 1985-05-31 | 1985-05-31 | Hybrid gain/index guided semiconductor lasers and array lasers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3688002D1 true DE3688002D1 (de) | 1993-04-22 |
DE3688002T2 DE3688002T2 (de) | 1993-07-22 |
Family
ID=24973844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686304023T Expired - Fee Related DE3688002T2 (de) | 1985-05-31 | 1986-05-27 | Halbleiter-laser. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4694459A (de) |
EP (1) | EP0203810B1 (de) |
JP (1) | JPH0728087B2 (de) |
DE (1) | DE3688002T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5136601A (en) * | 1984-11-19 | 1992-08-04 | Hitachi, Ltd. | Semiconductor laser |
JPS6257275A (ja) * | 1985-09-06 | 1987-03-12 | Sharp Corp | 半導体レ−ザアレイ装置 |
US4791648A (en) * | 1987-02-04 | 1988-12-13 | Amoco Corporation | Laser having a substantially planar waveguide |
EP0280304A3 (de) * | 1987-02-27 | 1989-07-26 | Siemens Aktiengesellschaft | Halbleiterlaseranordnung |
DE3727546A1 (de) * | 1987-08-18 | 1989-03-02 | Siemens Ag | Lichtverstaerker mit ringfoermig gefuehrter strahlung, insbesondere ringlaser-diode |
US4831629A (en) * | 1987-09-01 | 1989-05-16 | Xerox Corporation | Incoherent, optically coupled laser arrays with increased spectral width |
US4985897A (en) * | 1988-10-07 | 1991-01-15 | Trw Inc. | Semiconductor laser array having high power and high beam quality |
US5206185A (en) * | 1988-12-29 | 1993-04-27 | Sharp Kabushiki Kaisha | Semiconductor laser device |
US5287376A (en) * | 1992-12-14 | 1994-02-15 | Xerox Corporation | Independently addressable semiconductor diode lasers with integral lowloss passive waveguides |
JP3573475B2 (ja) * | 1993-12-01 | 2004-10-06 | 富士写真フイルム株式会社 | レーザーダイオードポンピング固体レーザー |
JPH0940052A (ja) * | 1995-07-28 | 1997-02-10 | Mamoru Kamo | 卵包装容器 |
US6577658B1 (en) | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
JP2001284732A (ja) * | 2000-03-31 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 多波長レーザ発光装置、当該装置に用いられる半導体レーザアレイ素子及び当該半導体レーザアレイ素子の製造方法 |
US7269195B2 (en) * | 2002-03-04 | 2007-09-11 | Quintessence Photonics Corporation | Laser diode with an amplification section that has a varying index of refraction |
DE102008058436B4 (de) | 2008-11-21 | 2019-03-07 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip |
DE102010020625B4 (de) * | 2010-05-14 | 2024-02-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers |
FR2991112B1 (fr) * | 2012-05-25 | 2015-02-20 | Thales Sa | Laser semiconducteur optimise |
US10658813B2 (en) * | 2017-06-09 | 2020-05-19 | Nlight, Inc. | Low divergence high brightness broad area lasers |
EP3688849A1 (de) * | 2017-09-28 | 2020-08-05 | Apple Inc. | Laserarchitekturen unter verwendung von quantentopfmischungstechniken |
DE102020108941B4 (de) * | 2020-03-31 | 2022-05-25 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Diodenlaser mit verrringerter Strahldivergenz |
DE102020125719A1 (de) * | 2020-10-01 | 2022-04-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauteil mit strukturierter anschlussfläche und verfahren zum betreiben eines bauteils |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US31806A (en) * | 1861-03-26 | Chukjsr | ||
GB1557072A (en) * | 1976-10-13 | 1979-12-05 | Standard Telephones Cables Ltd | Stripe lears |
JPS54115088A (en) * | 1978-02-28 | 1979-09-07 | Nec Corp | Double hetero junction laser element of stripe type |
US4219785A (en) * | 1978-06-26 | 1980-08-26 | Xerox Corporation | Optical beam scanning by phase delays |
US4369513A (en) * | 1979-11-09 | 1983-01-18 | Hitachi, Ltd. | Semiconductor laser device |
JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
US4475200A (en) * | 1981-12-03 | 1984-10-02 | Rockwell International Corporation | Semiconductor laser beam scanner |
US4594718A (en) * | 1983-02-01 | 1986-06-10 | Xerox Corporation | Combination index/gain guided semiconductor lasers |
-
1985
- 1985-05-31 US US06/739,805 patent/US4694459A/en not_active Expired - Lifetime
-
1986
- 1986-05-23 JP JP61118974A patent/JPH0728087B2/ja not_active Expired - Lifetime
- 1986-05-27 DE DE8686304023T patent/DE3688002T2/de not_active Expired - Fee Related
- 1986-05-27 EP EP86304023A patent/EP0203810B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0728087B2 (ja) | 1995-03-29 |
DE3688002T2 (de) | 1993-07-22 |
EP0203810A2 (de) | 1986-12-03 |
EP0203810A3 (en) | 1988-06-29 |
JPS61278189A (ja) | 1986-12-09 |
US4694459A (en) | 1987-09-15 |
EP0203810B1 (de) | 1993-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |