NL186665C - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting.Info
- Publication number
- NL186665C NL186665C NLAANVRAGE8001409,A NL8001409A NL186665C NL 186665 C NL186665 C NL 186665C NL 8001409 A NL8001409 A NL 8001409A NL 186665 C NL186665 C NL 186665C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8001409,A NL186665C (nl) | 1980-03-10 | 1980-03-10 | Halfgeleiderinrichting. |
DE3047738A DE3047738C2 (de) | 1980-03-10 | 1980-12-18 | Halbleiteranordnung |
GB8040886A GB2071412B (en) | 1980-03-10 | 1980-12-19 | Arrangement of zones in a semiconductor device |
SE8009091A SE8009091L (sv) | 1980-03-10 | 1980-12-23 | Halvledaranordning |
FR8027683A FR2477776A1 (fr) | 1980-03-10 | 1980-12-29 | Dispositif semiconducteur a transistor, comportant notamment des moyens de stabilisation de la tension de claquage et du coefficient d'amplification en fonction du courant |
JP18949680A JPS56126966A (en) | 1980-03-10 | 1980-12-29 | Semiconductor device |
IT26985/80A IT1194011B (it) | 1980-03-10 | 1980-12-29 | Dispositivo semiconduttore |
CA000367727A CA1155971A (en) | 1980-03-10 | 1980-12-30 | Semiconductor device |
US06/223,199 US4409606A (en) | 1980-03-10 | 1981-01-08 | High breakdown voltage semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8001409 | 1980-03-10 | ||
NLAANVRAGE8001409,A NL186665C (nl) | 1980-03-10 | 1980-03-10 | Halfgeleiderinrichting. |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8001409A NL8001409A (nl) | 1981-10-01 |
NL186665B NL186665B (nl) | 1990-08-16 |
NL186665C true NL186665C (nl) | 1992-01-16 |
Family
ID=19834952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE8001409,A NL186665C (nl) | 1980-03-10 | 1980-03-10 | Halfgeleiderinrichting. |
Country Status (9)
Country | Link |
---|---|
US (1) | US4409606A (nl) |
JP (1) | JPS56126966A (nl) |
CA (1) | CA1155971A (nl) |
DE (1) | DE3047738C2 (nl) |
FR (1) | FR2477776A1 (nl) |
GB (1) | GB2071412B (nl) |
IT (1) | IT1194011B (nl) |
NL (1) | NL186665C (nl) |
SE (1) | SE8009091L (nl) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
CA1200622A (en) * | 1981-12-04 | 1986-02-11 | Western Electric Company, Incorporated | Collector for radiation-generated current carriers in a semiconductor structure |
US4985373A (en) * | 1982-04-23 | 1991-01-15 | At&T Bell Laboratories | Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures |
DE3215652A1 (de) * | 1982-04-27 | 1983-10-27 | Siemens AG, 1000 Berlin und 8000 München | Integrierbarer bipolarer transistor |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
US4862242A (en) * | 1983-12-05 | 1989-08-29 | General Electric Company | Semiconductor wafer with an electrically-isolated semiconductor device |
US4622568A (en) * | 1984-05-09 | 1986-11-11 | Eaton Corporation | Planar field-shaped bidirectional power FET |
US4661838A (en) * | 1985-10-24 | 1987-04-28 | General Electric Company | High voltage semiconductor devices electrically isolated from an integrated circuit substrate |
US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
US4823173A (en) * | 1986-01-07 | 1989-04-18 | Harris Corporation | High voltage lateral MOS structure with depleted top gate region |
US4868921A (en) * | 1986-09-05 | 1989-09-19 | General Electric Company | High voltage integrated circuit devices electrically isolated from an integrated circuit substrate |
US4717679A (en) * | 1986-11-26 | 1988-01-05 | General Electric Company | Minimal mask process for fabricating a lateral insulated gate semiconductor device |
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
FR2650122B1 (fr) * | 1989-07-21 | 1991-11-08 | Motorola Semiconducteurs | Dispositif semi-conducteur a haute tension et son procede de fabrication |
SE500815C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Dielektriskt isolerad halvledaranordning och förfarande för dess framställning |
SE500814C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning |
FR2708144A1 (fr) * | 1993-07-22 | 1995-01-27 | Philips Composants | Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ. |
JP3412332B2 (ja) * | 1995-04-26 | 2003-06-03 | 株式会社デンソー | 半導体装置 |
SE512661C2 (sv) * | 1996-11-13 | 2000-04-17 | Ericsson Telefon Ab L M | Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma |
US5912501A (en) * | 1997-07-18 | 1999-06-15 | Advanced Micro Devices, Inc. | Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots |
US5859469A (en) * | 1997-07-18 | 1999-01-12 | Advanced Micro Devices, Inc. | Use of tungsten filled slots as ground plane in integrated circuit structure |
US6011297A (en) * | 1997-07-18 | 2000-01-04 | Advanced Micro Devices,Inc. | Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage |
US6392274B1 (en) * | 2000-04-04 | 2002-05-21 | United Microelectronics Corp. | High-voltage metal-oxide-semiconductor transistor |
DE102009039056A1 (de) | 2008-11-12 | 2010-05-20 | Sew-Eurodrive Gmbh & Co. Kg | Asynchronmotor und Verfahren zum Herstellen eines Asynchronmotor |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3564356A (en) * | 1968-10-24 | 1971-02-16 | Tektronix Inc | High voltage integrated circuit transistor |
DE2229122A1 (de) * | 1972-06-15 | 1974-01-10 | Bosch Gmbh Robert | Integrierter schaltkreis |
CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
US4329703A (en) * | 1978-07-21 | 1982-05-11 | Monolithic Memories, Inc. | Lateral PNP transistor |
NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
-
1980
- 1980-03-10 NL NLAANVRAGE8001409,A patent/NL186665C/nl not_active IP Right Cessation
- 1980-12-18 DE DE3047738A patent/DE3047738C2/de not_active Expired
- 1980-12-19 GB GB8040886A patent/GB2071412B/en not_active Expired
- 1980-12-23 SE SE8009091A patent/SE8009091L/ not_active Application Discontinuation
- 1980-12-29 JP JP18949680A patent/JPS56126966A/ja active Granted
- 1980-12-29 IT IT26985/80A patent/IT1194011B/it active
- 1980-12-29 FR FR8027683A patent/FR2477776A1/fr active Granted
- 1980-12-30 CA CA000367727A patent/CA1155971A/en not_active Expired
-
1981
- 1981-01-08 US US06/223,199 patent/US4409606A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4409606A (en) | 1983-10-11 |
DE3047738C2 (de) | 1986-07-17 |
GB2071412B (en) | 1984-04-18 |
NL186665B (nl) | 1990-08-16 |
SE8009091L (sv) | 1981-09-11 |
NL8001409A (nl) | 1981-10-01 |
CA1155971A (en) | 1983-10-25 |
IT1194011B (it) | 1988-08-31 |
JPS56126966A (en) | 1981-10-05 |
DE3047738A1 (de) | 1981-09-24 |
FR2477776A1 (fr) | 1981-09-11 |
GB2071412A (en) | 1981-09-16 |
FR2477776B1 (nl) | 1984-08-24 |
JPH0127592B2 (nl) | 1989-05-30 |
IT8026985A0 (it) | 1980-12-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BT | A notification was added to the application dossier and made available to the public | ||
A85 | Still pending on 85-01-01 | ||
BC | A request for examination has been filed | ||
R1VN | Request for mentioning name(s) of the inventor(s) in the patent or request for changing the name(s) of inventor(s) with respec | ||
NP1 | Patent granted (not automatically) | ||
V1 | Lapsed because of non-payment of the annual fee |