DE3686944D1 - Halbleiteranordnung. - Google Patents

Halbleiteranordnung.

Info

Publication number
DE3686944D1
DE3686944D1 DE8686904403T DE3686944T DE3686944D1 DE 3686944 D1 DE3686944 D1 DE 3686944D1 DE 8686904403 T DE8686904403 T DE 8686904403T DE 3686944 T DE3686944 T DE 3686944T DE 3686944 D1 DE3686944 D1 DE 3686944D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686904403T
Other languages
English (en)
Other versions
DE3686944T2 (de
Inventor
Toshiyuki Usagawa
Masao Yamane
Shigeo Goto
Yasunari Umemoto
Norikazu Hashimoto
Hiroyuki Itoh
Tomoyoshi Mishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16412885A external-priority patent/JPH0738393B2/ja
Priority claimed from JP16412685A external-priority patent/JPH0738392B2/ja
Priority claimed from JP61040244A external-priority patent/JPH0763051B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3686944D1 publication Critical patent/DE3686944D1/de
Application granted granted Critical
Publication of DE3686944T2 publication Critical patent/DE3686944T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7376—Resonant tunnelling transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7373—Vertical transistors having a two-dimensional base, e.g. modulation-doped base, inversion layer base, delta-doped base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DE8686904403T 1985-07-26 1986-07-23 Halbleiteranordnung. Expired - Fee Related DE3686944T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16412885A JPH0738393B2 (ja) 1985-07-26 1985-07-26 半導体装置
JP16412685A JPH0738392B2 (ja) 1985-07-26 1985-07-26 半導体装置
JP61040244A JPH0763051B2 (ja) 1986-02-27 1986-02-27 半導体装置
PCT/JP1986/000391 WO1987000692A1 (en) 1985-07-26 1986-07-23 Semiconductor device

Publications (2)

Publication Number Publication Date
DE3686944D1 true DE3686944D1 (de) 1992-11-12
DE3686944T2 DE3686944T2 (de) 1993-04-01

Family

ID=27290408

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686904403T Expired - Fee Related DE3686944T2 (de) 1985-07-26 1986-07-23 Halbleiteranordnung.

Country Status (3)

Country Link
EP (1) EP0240567B1 (de)
DE (1) DE3686944T2 (de)
WO (1) WO1987000692A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910006751B1 (ko) * 1987-01-27 1991-09-02 후지쓰 가부시끼가이샤 반도체 집적회로장치 및 그의 제조방법
US5162877A (en) * 1987-01-27 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device and method of producing same
JP2675039B2 (ja) * 1988-02-03 1997-11-12 株式会社日立製作所 半導体装置
US5099299A (en) * 1990-06-15 1992-03-24 International Business Machines Corporation Modulation doped base heterojunction bipolar transistor
EP0505942A1 (de) * 1991-03-28 1992-09-30 Texas Instruments Incorporated Integrationsverfahren für Heterobipolartransistoren mit Hetero-FETS und PIN-Dioden
US5213987A (en) * 1991-03-28 1993-05-25 Texas Instruments Incorporated Method of integrating heterojunction bipolar transistors with PIN diodes
CN103137666B (zh) * 2011-11-23 2015-12-09 上海华虹宏力半导体制造有限公司 一种纵向pnp双极晶体管及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946106B2 (ja) * 1981-12-10 1984-11-10 工業技術院長 超高速トランジスタ
EP0133342B1 (de) * 1983-06-24 1989-11-29 Nec Corporation Halbleiterstruktur mit Übergitter hoher Trägerdichte
JPH0626242B2 (ja) * 1983-12-05 1994-04-06 富士通株式会社 半導体集積回路装置
CA1237824A (en) * 1984-04-17 1988-06-07 Takashi Mimura Resonant tunneling semiconductor device
JPS61102775A (ja) * 1984-10-26 1986-05-21 Agency Of Ind Science & Technol バイポ−ラ半導体装置
JPH0652055A (ja) * 1990-04-30 1994-02-25 Texas Instr Inc <Ti> キャッシュ・メモリとその性能を改善する方法
JP3068339B2 (ja) * 1992-07-15 2000-07-24 日清製粉株式会社 冷凍ベーカリー製品
JPH0650956A (ja) * 1992-07-29 1994-02-25 Shimadzu Corp 全有機体炭素測定装置

Also Published As

Publication number Publication date
EP0240567A4 (de) 1988-01-11
EP0240567B1 (de) 1992-10-07
EP0240567A1 (de) 1987-10-14
WO1987000692A1 (en) 1987-01-29
DE3686944T2 (de) 1993-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee