DE3576602D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3576602D1
DE3576602D1 DE8585307431T DE3576602T DE3576602D1 DE 3576602 D1 DE3576602 D1 DE 3576602D1 DE 8585307431 T DE8585307431 T DE 8585307431T DE 3576602 T DE3576602 T DE 3576602T DE 3576602 D1 DE3576602 D1 DE 3576602D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585307431T
Other languages
English (en)
Inventor
Katsuki C O Mitsubish Ichinose
Hirofumi C O Mitsubi Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3576602D1 publication Critical patent/DE3576602D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/08Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
DE8585307431T 1984-10-16 1985-10-15 Halbleiterspeicheranordnung. Expired - Fee Related DE3576602D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59217836A JPS6196588A (ja) 1984-10-16 1984-10-16 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3576602D1 true DE3576602D1 (de) 1990-04-19

Family

ID=16710510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585307431T Expired - Fee Related DE3576602D1 (de) 1984-10-16 1985-10-15 Halbleiterspeicheranordnung.

Country Status (4)

Country Link
US (1) US4709354A (de)
EP (1) EP0178914B1 (de)
JP (1) JPS6196588A (de)
DE (1) DE3576602D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61104394A (ja) * 1984-10-22 1986-05-22 Mitsubishi Electric Corp 半導体記憶装置
JPS6337269A (ja) * 1986-08-01 1988-02-17 Fujitsu Ltd モ−ド選定回路
JP2569538B2 (ja) * 1987-03-17 1997-01-08 ソニー株式会社 メモリ装置
US5046052A (en) * 1988-06-01 1991-09-03 Sony Corporation Internal low voltage transformation circuit of static random access memory
JP3006014B2 (ja) * 1990-02-13 2000-02-07 日本電気株式会社 半導体メモリ
US5295100A (en) * 1992-08-14 1994-03-15 Micron Semiconductor, Inc. Method for providing a faster ones voltage level restore operation in a DRAM

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101185A (en) * 1979-01-29 1980-08-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory device
JPS57120294A (en) * 1981-01-19 1982-07-27 Nec Corp Memory control circuit
US4539661A (en) * 1982-06-30 1985-09-03 Fujitsu Limited Static-type semiconductor memory device

Also Published As

Publication number Publication date
US4709354A (en) 1987-11-24
EP0178914A2 (de) 1986-04-23
JPS6196588A (ja) 1986-05-15
EP0178914B1 (de) 1990-03-14
EP0178914A3 (en) 1987-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee