DE3486094D1 - Halbleiterspeicheranordnung. - Google Patents
Halbleiterspeicheranordnung.Info
- Publication number
- DE3486094D1 DE3486094D1 DE8484306978T DE3486094T DE3486094D1 DE 3486094 D1 DE3486094 D1 DE 3486094D1 DE 8484306978 T DE8484306978 T DE 8484306978T DE 3486094 T DE3486094 T DE 3486094T DE 3486094 D1 DE3486094 D1 DE 3486094D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- memory arrangement
- arrangement
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58191039A JPS6083374A (ja) | 1983-10-14 | 1983-10-14 | 半導体記憶装置 |
JP59035116A JPS60179999A (ja) | 1984-02-28 | 1984-02-28 | 不揮発性半導体記憶装置 |
JP59038830A JPS60185297A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
JP59038832A JPS60185299A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
JP59038831A JPS60185298A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
JP59038827A JPS60185294A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
JP59038829A JPS60185296A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
JP59038828A JPS60185295A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3486094D1 true DE3486094D1 (de) | 1993-04-15 |
DE3486094T2 DE3486094T2 (de) | 1993-06-17 |
Family
ID=27572177
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484306978T Expired - Fee Related DE3486094T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung. |
DE3486418T Expired - Fee Related DE3486418T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3486418T Expired - Fee Related DE3486418T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
Country Status (3)
Country | Link |
---|---|
US (1) | US4630238A (de) |
EP (2) | EP0147019B1 (de) |
DE (2) | DE3486094T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61246995A (ja) * | 1985-04-24 | 1986-11-04 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS62217493A (ja) * | 1986-02-27 | 1987-09-24 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
US4701883A (en) * | 1986-06-19 | 1987-10-20 | Motorola Inc. | ECL/CMOS memory cell with separate read and write bit lines |
US5189641A (en) * | 1987-06-08 | 1993-02-23 | Fujitsu Limited | Non-volatile random access memory device |
US4809225A (en) * | 1987-07-02 | 1989-02-28 | Ramtron Corporation | Memory cell with volatile and non-volatile portions having ferroelectric capacitors |
JPS6414798A (en) * | 1987-07-09 | 1989-01-18 | Fujitsu Ltd | Non-volatile memory device |
JP2645417B2 (ja) * | 1987-09-19 | 1997-08-25 | 富士通株式会社 | 不揮発性メモリ装置 |
US5434811A (en) * | 1987-11-19 | 1995-07-18 | National Semiconductor Corporation | Non-destructive read ferroelectric based memory circuit |
JPH01214993A (ja) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | データ記憶装置 |
JP3247402B2 (ja) * | 1991-07-25 | 2002-01-15 | 株式会社東芝 | 半導体装置及び不揮発性半導体記憶装置 |
JP4802415B2 (ja) * | 2001-08-13 | 2011-10-26 | 日本テキサス・インスツルメンツ株式会社 | 強誘電体メモリ |
US7050323B2 (en) * | 2002-08-29 | 2006-05-23 | Texas Instruments Incorporated | Ferroelectric memory |
US7099189B1 (en) * | 2004-10-05 | 2006-08-29 | Actel Corporation | SRAM cell controlled by non-volatile memory cell |
JP5076462B2 (ja) * | 2005-12-28 | 2012-11-21 | ソニー株式会社 | 半導体メモリデバイス |
FR2920590B1 (fr) | 2007-08-28 | 2009-11-20 | New Imaging Technologies Sas | Pixel actif cmos a tres grande dynamique de fonctionnement |
US8107290B2 (en) * | 2008-04-01 | 2012-01-31 | The Regents Of The University Of Michigan | Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device |
US9672911B2 (en) * | 2015-08-25 | 2017-06-06 | Nxp Usa, Inc. | Static random access memory (SRAM) with programmable resistive elements |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4274012A (en) * | 1979-01-24 | 1981-06-16 | Xicor, Inc. | Substrate coupled floating gate memory cell |
GB2042296B (en) * | 1979-01-24 | 1983-05-11 | Xicor Inc | Nonvolatile static random access/memory device |
US4400799A (en) * | 1981-09-08 | 1983-08-23 | Intel Corporation | Non-volatile memory cell |
US4408303A (en) * | 1981-12-28 | 1983-10-04 | Mostek Corporation | Directly-coupled and capacitively coupled nonvolatile static RAM cell |
US4449205A (en) * | 1982-02-19 | 1984-05-15 | International Business Machines Corp. | Dynamic RAM with non-volatile back-up storage and method of operation thereof |
US4420821A (en) * | 1982-02-19 | 1983-12-13 | International Business Machines Corporation | Static RAM with non-volatile back-up storage and method of operation thereof |
US4527258A (en) * | 1982-09-30 | 1985-07-02 | Mostek Corporation | E2 PROM having bulk storage |
-
1984
- 1984-10-09 US US06/659,191 patent/US4630238A/en not_active Expired - Fee Related
- 1984-10-12 EP EP84306978A patent/EP0147019B1/de not_active Expired - Lifetime
- 1984-10-12 DE DE8484306978T patent/DE3486094T2/de not_active Expired - Fee Related
- 1984-10-12 DE DE3486418T patent/DE3486418T2/de not_active Expired - Fee Related
- 1984-10-12 EP EP91121355A patent/EP0481532B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3486094T2 (de) | 1993-06-17 |
EP0481532A2 (de) | 1992-04-22 |
DE3486418T2 (de) | 1996-05-15 |
EP0147019B1 (de) | 1993-03-10 |
EP0147019A3 (en) | 1988-08-24 |
DE3486418D1 (de) | 1996-02-08 |
EP0481532B1 (de) | 1995-12-27 |
US4630238A (en) | 1986-12-16 |
EP0147019A2 (de) | 1985-07-03 |
EP0481532A3 (en) | 1992-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |