KR910002030B1 - Semiconductor memory device having transistor and hole type condensor on the substrate surface - Google Patents
Semiconductor memory device having transistor and hole type condensor on the substrate surfaceInfo
- Publication number
- KR910002030B1 KR910002030B1 KR8407894A KR840007894A KR910002030B1 KR 910002030 B1 KR910002030 B1 KR 910002030B1 KR 8407894 A KR8407894 A KR 8407894A KR 840007894 A KR840007894 A KR 840007894A KR 910002030 B1 KR910002030 B1 KR 910002030B1
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- memory device
- semiconductor memory
- substrate surface
- hole type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58233554A JPS60126861A (ja) | 1983-12-13 | 1983-12-13 | 半導体記憶装置 |
JP???58-233554 | 1983-12-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850004875A KR850004875A (ko) | 1985-07-27 |
KR910002030B1 true KR910002030B1 (en) | 1991-03-30 |
Family
ID=16956879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8407894A KR910002030B1 (en) | 1983-12-13 | 1984-12-13 | Semiconductor memory device having transistor and hole type condensor on the substrate surface |
Country Status (5)
Country | Link |
---|---|
US (1) | US4646118A (ko) |
EP (1) | EP0145606B1 (ko) |
JP (1) | JPS60126861A (ko) |
KR (1) | KR910002030B1 (ko) |
DE (1) | DE3484232D1 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6161441A (ja) * | 1984-09-03 | 1986-03-29 | Toshiba Corp | 半導体装置の製造方法 |
US4791463A (en) * | 1984-10-31 | 1988-12-13 | Texas Instruments Incorporated | Structure for contacting devices in three dimensional circuitry |
JPH0650765B2 (ja) * | 1985-08-28 | 1994-06-29 | 日本電気株式会社 | 半導体装置の製造方法 |
JPS61280651A (ja) * | 1985-05-24 | 1986-12-11 | Fujitsu Ltd | 半導体記憶装置 |
JPS6239053A (ja) * | 1985-08-14 | 1987-02-20 | Nec Corp | 半導体メモリセル及びその製造方法 |
US4679300A (en) * | 1985-10-07 | 1987-07-14 | Thomson Components-Mostek Corp. | Method of making a trench capacitor and dram memory cell |
US5342792A (en) * | 1986-03-07 | 1994-08-30 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor memory element |
JPH0691211B2 (ja) * | 1986-03-07 | 1994-11-14 | キヤノン株式会社 | 半導体記憶素子の製造方法 |
KR900003262B1 (ko) * | 1987-04-30 | 1990-05-12 | 삼성전자 주식회사 | 반도체 장치의 제조방법 |
JPH01143254A (ja) * | 1987-11-28 | 1989-06-05 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4896293A (en) * | 1988-06-09 | 1990-01-23 | Texas Instruments Incorporated | Dynamic ram cell with isolated trench capacitors |
US4918454A (en) * | 1988-10-13 | 1990-04-17 | Crystal Semiconductor Corporation | Compensated capacitors for switched capacitor input of an analog-to-digital converter |
US5208597A (en) * | 1988-10-13 | 1993-05-04 | Crystal Semiconductor | Compensated capacitors for switched capacitor input of an analog-to-digital converter |
US5057887A (en) * | 1989-05-14 | 1991-10-15 | Texas Instruments Incorporated | High density dynamic ram cell |
JPH0770618B2 (ja) * | 1989-05-22 | 1995-07-31 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
JP2551203B2 (ja) * | 1990-06-05 | 1996-11-06 | 三菱電機株式会社 | 半導体装置 |
KR970001894B1 (en) * | 1991-09-13 | 1997-02-18 | Nippon Electric Kk | Semiconductor memory device |
US5589847A (en) * | 1991-09-23 | 1996-12-31 | Xerox Corporation | Switched capacitor analog circuits using polysilicon thin film technology |
KR0157912B1 (ko) * | 1995-11-28 | 1998-12-15 | 문정환 | 반도체 장치의 축전기 전극구조 및 제조 방법 |
US5614431A (en) * | 1995-12-20 | 1997-03-25 | International Business Machines Corporation | Method of making buried strap trench cell yielding an extended transistor |
US5793075A (en) * | 1996-07-30 | 1998-08-11 | International Business Machines Corporation | Deep trench cell capacitor with inverting counter electrode |
JP3749776B2 (ja) | 1997-02-28 | 2006-03-01 | 株式会社東芝 | 半導体装置 |
US6222254B1 (en) * | 1997-03-31 | 2001-04-24 | Intel Corporation | Thermal conducting trench in a semiconductor structure and method for forming the same |
US7067406B2 (en) * | 1997-03-31 | 2006-06-27 | Intel Corporation | Thermal conducting trench in a semiconductor structure and method for forming the same |
US9431107B2 (en) * | 2012-12-14 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory devices and methods of manufacture thereof |
KR102279921B1 (ko) * | 2014-02-12 | 2021-07-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2441385C3 (de) * | 1974-08-29 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement |
JPS538581A (en) * | 1976-07-12 | 1978-01-26 | Nec Corp | Semiconductor memory unit |
JPS5394191A (en) * | 1977-01-28 | 1978-08-17 | Toshiba Corp | Semiconductor device |
US4163243A (en) * | 1977-09-30 | 1979-07-31 | Hewlett-Packard Company | One-transistor memory cell with enhanced capacitance |
JPS5524429A (en) * | 1978-08-09 | 1980-02-21 | Mitsubishi Electric Corp | Punch-through type constant-voltage diode and its manufacturing method |
JPS55146956A (en) * | 1979-05-02 | 1980-11-15 | Fujitsu Ltd | Semiconductor element having function for avoiding generation of soft error due to alpha ray |
JPS5632757A (en) * | 1979-08-25 | 1981-04-02 | Semiconductor Res Found | Insulated gate type transistor and integrated circuit |
JPS5643753A (en) * | 1979-09-18 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory storage |
US4466180A (en) * | 1981-06-25 | 1984-08-21 | Rockwell International Corporation | Method of manufacturing punch through voltage regulator diodes utilizing shaping and selective doping |
JPS583260A (ja) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | 竪型埋め込みキヤパシタ |
JPS582360A (ja) * | 1981-06-30 | 1983-01-07 | Toyota Central Res & Dev Lab Inc | 耐糸状腐食性塗料組成物 |
US4507159A (en) * | 1981-10-07 | 1985-03-26 | Advanced Micro Devices, Inc. | Method of manufacturing high capacity semiconductor capacitance devices |
JPS58137245A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 大規模半導体メモリ |
-
1983
- 1983-12-13 JP JP58233554A patent/JPS60126861A/ja active Granted
-
1984
- 1984-12-12 DE DE8484402560T patent/DE3484232D1/de not_active Expired - Lifetime
- 1984-12-12 EP EP84402560A patent/EP0145606B1/en not_active Expired - Lifetime
- 1984-12-13 KR KR8407894A patent/KR910002030B1/ko not_active IP Right Cessation
- 1984-12-13 US US06/681,290 patent/US4646118A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4646118A (en) | 1987-02-24 |
EP0145606B1 (en) | 1991-03-06 |
EP0145606A2 (en) | 1985-06-19 |
DE3484232D1 (de) | 1991-04-11 |
JPH0562468B2 (ko) | 1993-09-08 |
KR850004875A (ko) | 1985-07-27 |
EP0145606A3 (en) | 1986-01-29 |
JPS60126861A (ja) | 1985-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040323 Year of fee payment: 14 |
|
EXPY | Expiration of term |