DE3153269A1 - - Google Patents
Info
- Publication number
- DE3153269A1 DE3153269A1 DE19813153269 DE3153269A DE3153269A1 DE 3153269 A1 DE3153269 A1 DE 3153269A1 DE 19813153269 DE19813153269 DE 19813153269 DE 3153269 A DE3153269 A DE 3153269A DE 3153269 A1 DE3153269 A1 DE 3153269A1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/151,301 US4400409A (en) | 1980-05-19 | 1980-05-19 | Method of making p-doped silicon films |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3153269A1 true DE3153269A1 (de) | 1985-06-13 |
DE3153269C2 DE3153269C2 (de) | 1986-05-15 |
Family
ID=22538142
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3119481A Expired - Lifetime DE3119481C2 (de) | 1980-05-19 | 1981-05-15 | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
DE3153269A Expired - Lifetime DE3153269C2 (de) | 1980-05-19 | 1981-05-15 | Verfahren und Vorrichtung zum Herstellen von dotiertem Halbleitermaterial durch Glimmentladung |
DE3153270A Expired - Lifetime DE3153270C2 (de) | 1980-05-19 | 1981-05-15 | Verfahren zum Herstellen von dotiertem Halbleitermaterial durch Glimmentladung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3119481A Expired - Lifetime DE3119481C2 (de) | 1980-05-19 | 1981-05-15 | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3153270A Expired - Lifetime DE3153270C2 (de) | 1980-05-19 | 1981-05-15 | Verfahren zum Herstellen von dotiertem Halbleitermaterial durch Glimmentladung |
Country Status (19)
Country | Link |
---|---|
US (1) | US4400409A (de) |
JP (5) | JPS5743413A (de) |
KR (3) | KR840000756B1 (de) |
AU (3) | AU542845B2 (de) |
BR (1) | BR8103030A (de) |
CA (1) | CA1184096A (de) |
DE (3) | DE3119481C2 (de) |
ES (3) | ES502281A0 (de) |
FR (1) | FR2482786B1 (de) |
GB (3) | GB2076433B (de) |
IE (1) | IE52688B1 (de) |
IL (1) | IL62883A (de) |
IN (1) | IN155670B (de) |
IT (1) | IT1135827B (de) |
MX (1) | MX155307A (de) |
NL (1) | NL8102411A (de) |
PH (1) | PH18408A (de) |
SE (1) | SE456380B (de) |
ZA (1) | ZA813076B (de) |
Families Citing this family (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US4677738A (en) * | 1980-05-19 | 1987-07-07 | Energy Conversion Devices, Inc. | Method of making a photovoltaic panel |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US4542711A (en) * | 1981-03-16 | 1985-09-24 | Sovonics Solar Systems | Continuous system for depositing amorphous semiconductor material |
EP0078541B1 (de) * | 1981-11-04 | 1991-01-16 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Biegsame photovoltaische Einrichtung |
JPS58169980A (ja) * | 1982-03-19 | 1983-10-06 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
US4485125A (en) * | 1982-03-19 | 1984-11-27 | Energy Conversion Devices, Inc. | Method for continuously producing tandem amorphous photovoltaic cells |
US4423701A (en) * | 1982-03-29 | 1984-01-03 | Energy Conversion Devices, Inc. | Glow discharge deposition apparatus including a non-horizontally disposed cathode |
US4462332A (en) * | 1982-04-29 | 1984-07-31 | Energy Conversion Devices, Inc. | Magnetic gas gate |
JPS58196063A (ja) * | 1982-05-10 | 1983-11-15 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
JPS5934668A (ja) * | 1982-08-21 | 1984-02-25 | Agency Of Ind Science & Technol | 薄膜太陽電池の製造方法 |
JPS5950575A (ja) * | 1982-09-16 | 1984-03-23 | Agency Of Ind Science & Technol | 太陽電池の製造方法 |
JPS5961077A (ja) * | 1982-09-29 | 1984-04-07 | Nippon Denso Co Ltd | アモルフアスシリコン太陽電池 |
US4443652A (en) * | 1982-11-09 | 1984-04-17 | Energy Conversion Devices, Inc. | Electrically interconnected large area photovoltaic cells and method of producing said cells |
US4515107A (en) * | 1982-11-12 | 1985-05-07 | Sovonics Solar Systems | Apparatus for the manufacture of photovoltaic devices |
JPS59201471A (ja) * | 1983-04-29 | 1984-11-15 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
US4483883A (en) * | 1982-12-22 | 1984-11-20 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
US4513684A (en) * | 1982-12-22 | 1985-04-30 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
JPS60119784A (ja) * | 1983-12-01 | 1985-06-27 | Kanegafuchi Chem Ind Co Ltd | 絶縁金属基板の製法およびそれに用いる装置 |
AU562641B2 (en) | 1983-01-18 | 1987-06-18 | Energy Conversion Devices Inc. | Electronic matrix array |
US4479455A (en) * | 1983-03-14 | 1984-10-30 | Energy Conversion Devices, Inc. | Process gas introduction and channeling system to produce a profiled semiconductor layer |
JPH0614556B2 (ja) * | 1983-04-29 | 1994-02-23 | 株式会社半導体エネルギー研究所 | 光電変換装置及びその作製方法 |
JPS59228716A (ja) * | 1983-06-10 | 1984-12-22 | Sanyo Electric Co Ltd | 気相成長法 |
US4480585A (en) * | 1983-06-23 | 1984-11-06 | Energy Conversion Devices, Inc. | External isolation module |
DE3400843A1 (de) * | 1983-10-29 | 1985-07-18 | VEGLA Vereinigte Glaswerke GmbH, 5100 Aachen | Verfahren zum herstellen von autoglasscheiben mit streifenfoermigen blendschutzfiltern durch bedampfen oder sputtern, und vorrichtung zur durchfuehrung des verfahrens |
US4514583A (en) * | 1983-11-07 | 1985-04-30 | Energy Conversion Devices, Inc. | Substrate for photovoltaic devices |
JPS60214572A (ja) * | 1984-04-11 | 1985-10-26 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池およびその製造方法 |
US4634605A (en) * | 1984-05-23 | 1987-01-06 | Wiesmann Harold J | Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof |
JPS61133676A (ja) * | 1984-12-03 | 1986-06-20 | Showa Alum Corp | a−Si太陽電池用基板 |
JPS6142972A (ja) * | 1984-08-06 | 1986-03-01 | Showa Alum Corp | a−Si太陽電池用基板の製造方法 |
JPS6179548U (de) * | 1984-10-31 | 1986-05-27 | ||
US4609771A (en) * | 1984-11-02 | 1986-09-02 | Sovonics Solar Systems | Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material |
JPS61133675A (ja) * | 1984-12-03 | 1986-06-20 | Showa Alum Corp | a−Si太陽電池用基板の製造方法 |
US4566403A (en) * | 1985-01-30 | 1986-01-28 | Sovonics Solar Systems | Apparatus for microwave glow discharge deposition |
FR2581781B1 (fr) * | 1985-05-07 | 1987-06-12 | Thomson Csf | Elements de commande non lineaire pour ecran plat de visualisation electrooptique et son procede de fabrication |
US4664951A (en) * | 1985-07-31 | 1987-05-12 | Energy Conversion Devices, Inc. | Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration |
JPS6292485A (ja) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
FR2593343B1 (fr) * | 1986-01-20 | 1988-03-25 | Thomson Csf | Matrice d'elements photosensibles et son procede de fabrication, procede de lecture associe, et application de cette matrice a la prise de vue d'images |
JPH0744286B2 (ja) * | 1986-03-04 | 1995-05-15 | 三菱電機株式会社 | 非晶質光発電素子モジュールの製造方法 |
US4841908A (en) * | 1986-06-23 | 1989-06-27 | Minnesota Mining And Manufacturing Company | Multi-chamber deposition system |
US4874631A (en) * | 1986-06-23 | 1989-10-17 | Minnesota Mining And Manufacturing Company | Multi-chamber deposition system |
IL82673A0 (en) * | 1986-06-23 | 1987-11-30 | Minnesota Mining & Mfg | Multi-chamber depositions system |
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
DE3809010C2 (de) * | 1988-03-17 | 1998-02-19 | Siemens Ag | Verfahren zum Herstellen mikrokristalliner, n- oder p-leitender Siliziumschichten nach der Glimmentladungsplasmatechnik, geeignet für Solarzellen |
JPH0351971Y2 (de) * | 1988-05-12 | 1991-11-08 | ||
US5053625A (en) * | 1988-08-04 | 1991-10-01 | Minnesota Mining And Manufacturing Company | Surface characterization apparatus and method |
US5001939A (en) * | 1988-08-04 | 1991-03-26 | Minnesota Mining And Manufacturing Co. | Surface characterization apparatus and method |
JPH02235327A (ja) * | 1989-03-08 | 1990-09-18 | Fujitsu Ltd | 半導体成長装置および半導体成長方法 |
US5098850A (en) * | 1989-06-16 | 1992-03-24 | Canon Kabushiki Kaisha | Process for producing substrate for selective crystal growth, selective crystal growth process and process for producing solar battery by use of them |
DE69030140T2 (de) * | 1989-06-28 | 1997-09-04 | Canon Kk | Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht |
US5130170A (en) * | 1989-06-28 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation |
US5281541A (en) * | 1990-09-07 | 1994-01-25 | Canon Kabushiki Kaisha | Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method |
JP2824808B2 (ja) * | 1990-11-16 | 1998-11-18 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する装置 |
US5225378A (en) * | 1990-11-16 | 1993-07-06 | Tokyo Electron Limited | Method of forming a phosphorus doped silicon film |
US5629054A (en) * | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
JP2810532B2 (ja) * | 1990-11-29 | 1998-10-15 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
JP3101330B2 (ja) * | 1991-01-23 | 2000-10-23 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
JP2975151B2 (ja) * | 1991-03-28 | 1999-11-10 | キヤノン株式会社 | 半導体素子の連続的製造装置 |
JP3118037B2 (ja) * | 1991-10-28 | 2000-12-18 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
JP3073327B2 (ja) * | 1992-06-30 | 2000-08-07 | キヤノン株式会社 | 堆積膜形成方法 |
DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
US5821597A (en) * | 1992-09-11 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6720576B1 (en) | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
EP0609104B1 (de) * | 1993-01-29 | 1998-05-20 | Canon Kabushiki Kaisha | Verfahren zur Herstellung funktioneller niedergeschlagener Schichten |
JPH0653534A (ja) * | 1993-02-04 | 1994-02-25 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP3571785B2 (ja) * | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
DE9407482U1 (de) * | 1994-05-05 | 1994-10-06 | Balzers und Leybold Deutschland Holding AG, 63450 Hanau | Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken |
JP3169337B2 (ja) * | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
US6273955B1 (en) | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
US6096389A (en) * | 1995-09-14 | 2000-08-01 | Canon Kabushiki Kaisha | Method and apparatus for forming a deposited film using a microwave CVD process |
JP3025179B2 (ja) * | 1995-09-28 | 2000-03-27 | キヤノン株式会社 | 光電変換素子の形成方法 |
JPH09199431A (ja) | 1996-01-17 | 1997-07-31 | Canon Inc | 薄膜形成方法および薄膜形成装置 |
US6153013A (en) * | 1996-02-16 | 2000-11-28 | Canon Kabushiki Kaisha | Deposited-film-forming apparatus |
US5849108A (en) * | 1996-04-26 | 1998-12-15 | Canon Kabushiki Kaisha | Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction |
JP3437386B2 (ja) | 1996-09-05 | 2003-08-18 | キヤノン株式会社 | 光起電力素子、並びにその製造方法 |
US6159763A (en) * | 1996-09-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element |
US6057005A (en) * | 1996-12-12 | 2000-05-02 | Canon Kabushiki Kaisha | Method of forming semiconductor thin film |
US6159300A (en) * | 1996-12-17 | 2000-12-12 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
US6726812B1 (en) | 1997-03-04 | 2004-04-27 | Canon Kabushiki Kaisha | Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device |
JPH1180964A (ja) | 1997-07-07 | 1999-03-26 | Canon Inc | プラズマcvd法による堆積膜形成装置 |
US6268233B1 (en) | 1998-01-26 | 2001-07-31 | Canon Kabushiki Kaisha | Photovoltaic device |
JPH11246971A (ja) * | 1998-03-03 | 1999-09-14 | Canon Inc | 微結晶シリコン系薄膜の作製方法及び作製装置 |
JPH11251612A (ja) | 1998-03-03 | 1999-09-17 | Canon Inc | 光起電力素子の製造方法 |
CN1161820C (zh) | 1998-07-31 | 2004-08-11 | 佳能株式会社 | 半导体层制造方法和制造设备、光生伏打电池的制造方法 |
EP1001449A1 (de) | 1998-10-16 | 2000-05-17 | Canon Kabushiki Kaisha | Schicht bildendes Apparat und Verfahren |
JP2000204478A (ja) | 1998-11-11 | 2000-07-25 | Canon Inc | 基板処理装置及び基板処理方法 |
JP2001040478A (ja) | 1999-05-27 | 2001-02-13 | Canon Inc | 堆積膜形成装置及び堆積膜形成方法 |
JP3870014B2 (ja) | 1999-07-26 | 2007-01-17 | キヤノン株式会社 | 真空処理装置および真空処理方法 |
US6547922B2 (en) | 2000-01-31 | 2003-04-15 | Canon Kabushiki Kaisha | Vacuum-processing apparatus using a movable cooling plate during processing |
JP2001323376A (ja) * | 2000-03-06 | 2001-11-22 | Canon Inc | 堆積膜の形成装置 |
US6667240B2 (en) | 2000-03-09 | 2003-12-23 | Canon Kabushiki Kaisha | Method and apparatus for forming deposited film |
JP4439665B2 (ja) * | 2000-03-29 | 2010-03-24 | 株式会社半導体エネルギー研究所 | プラズマcvd装置 |
JP2002020863A (ja) | 2000-05-01 | 2002-01-23 | Canon Inc | 堆積膜の形成方法及び形成装置、及び基板処理方法 |
US6541316B2 (en) * | 2000-12-22 | 2003-04-01 | The Regents Of The University Of California | Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction |
JP2002305315A (ja) | 2001-01-31 | 2002-10-18 | Canon Inc | 半導体素子の形成方法及び半導体素子 |
KR100434794B1 (ko) * | 2001-02-22 | 2004-06-07 | 최동열 | 잉크젯 날염용 원단지 및 그 제조방법 |
JP4651072B2 (ja) | 2001-05-31 | 2011-03-16 | キヤノン株式会社 | 堆積膜形成方法、および堆積膜形成装置 |
GB0202125D0 (en) * | 2002-01-30 | 2002-03-20 | Qinetiq Ltd | Dark coatings |
ATE326556T1 (de) * | 2002-03-15 | 2006-06-15 | Vhf Technologies Sa | Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen |
GB0212062D0 (en) * | 2002-05-24 | 2002-07-03 | Vantico Ag | Jetable compositions |
JP2004043910A (ja) * | 2002-07-12 | 2004-02-12 | Canon Inc | 堆積膜形成方法および形成装置 |
JP2004300574A (ja) * | 2003-03-20 | 2004-10-28 | Canon Inc | 基板処理装置 |
WO2004097915A1 (ja) | 2003-04-25 | 2004-11-11 | Semiconductor Energy Laboratory Co., Ltd. | 液滴吐出装置、パターンの形成方法、および半導体装置の製造方法 |
JP2004335706A (ja) * | 2003-05-07 | 2004-11-25 | Canon Inc | 半導体素子の形成方法 |
RU2240280C1 (ru) | 2003-10-10 | 2004-11-20 | Ворлд Бизнес Ассошиэйтс Лимитед | Способ формирования упорядоченных волнообразных наноструктур (варианты) |
US7768018B2 (en) * | 2003-10-10 | 2010-08-03 | Wostec, Inc. | Polarizer based on a nanowire grid |
US7462514B2 (en) * | 2004-03-03 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television |
US20050196710A1 (en) * | 2004-03-04 | 2005-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus |
JP4416569B2 (ja) * | 2004-05-24 | 2010-02-17 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
US7446335B2 (en) * | 2004-06-18 | 2008-11-04 | Regents Of The University Of Minnesota | Process and apparatus for forming nanoparticles using radiofrequency plasmas |
US8158517B2 (en) * | 2004-06-28 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing wiring substrate, thin film transistor, display device and television device |
US20090014423A1 (en) * | 2007-07-10 | 2009-01-15 | Xuegeng Li | Concentric flow-through plasma reactor and methods therefor |
WO2008143716A2 (en) * | 2007-01-22 | 2008-11-27 | Innovalight, Inc. | In situ modification of group iv nanoparticles using gas phase nanoparticle reactors |
US20080220175A1 (en) | 2007-01-22 | 2008-09-11 | Lorenzo Mangolini | Nanoparticles wtih grafted organic molecules |
US8066840B2 (en) * | 2007-01-22 | 2011-11-29 | Solopower, Inc. | Finger pattern formation for thin film solar cells |
US8471170B2 (en) | 2007-07-10 | 2013-06-25 | Innovalight, Inc. | Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor |
US8968438B2 (en) * | 2007-07-10 | 2015-03-03 | Innovalight, Inc. | Methods and apparatus for the in situ collection of nucleated particles |
GB2453766A (en) * | 2007-10-18 | 2009-04-22 | Novalia Ltd | Method of fabricating an electronic device |
DE102008043458A1 (de) * | 2008-11-04 | 2010-05-12 | Q-Cells Se | Solarzelle |
KR20110015998A (ko) * | 2009-08-10 | 2011-02-17 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
US20110083724A1 (en) * | 2009-10-08 | 2011-04-14 | Ovshinsky Stanford R | Monolithic Integration of Photovoltaic Cells |
TWI501412B (zh) * | 2010-06-22 | 2015-09-21 | Iner Aec Executive Yuan | 具有改良的光捕捉結構之太陽電池 |
EP2492966B1 (de) * | 2011-02-24 | 2014-09-03 | Soitec Solar GmbH | Solarzellenarrays für Konzentrator-Photovoltaikmodule |
WO2013006077A1 (en) | 2011-07-06 | 2013-01-10 | Wostec, Inc. | Solar cell with nanostructured layer and methods of making and using |
KR20140054183A (ko) | 2011-08-05 | 2014-05-08 | 워스텍, 인코포레이티드 | 나노구조 층을 갖는 발광 다이오드 및 그의 제조 및 사용 방법 |
WO2013089578A1 (en) | 2011-12-12 | 2013-06-20 | Wostec, Inc. | Sers-sensor with nanostructured surface and methods of making and using |
US9035174B2 (en) * | 2011-12-19 | 2015-05-19 | Nthdegree Technologies Worldwide Inc. | Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels |
US9653627B2 (en) | 2012-01-18 | 2017-05-16 | Wostec, Inc. | Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using |
US9134250B2 (en) | 2012-03-23 | 2015-09-15 | Wostec, Inc. | SERS-sensor with nanostructured layer and methods of making and using |
US9500789B2 (en) | 2013-03-13 | 2016-11-22 | Wostec, Inc. | Polarizer based on a nanowire grid |
US9748423B2 (en) * | 2014-01-16 | 2017-08-29 | Fundacio Institut De Ciencies Fotoniques | Photovoltaic device with fiber array for sun tracking |
WO2015199573A1 (en) | 2014-06-26 | 2015-12-30 | Wostec, Inc. | Wavelike hard nanomask on a topographic feature and methods of making and using |
US10672427B2 (en) | 2016-11-18 | 2020-06-02 | Wostec, Inc. | Optical memory devices using a silicon wire grid polarizer and methods of making and using |
WO2018156042A1 (en) | 2017-02-27 | 2018-08-30 | Wostec, Inc. | Nanowire grid polarizer on a curved surface and methods of making and using |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
DE2638269A1 (de) * | 1976-08-25 | 1978-03-02 | Wacker Chemitronic | Verfahren zur herstellung von substratgebundenem, grossflaechigem halbleitermaterial |
US4133697A (en) * | 1977-06-24 | 1979-01-09 | Nasa | Solar array strip and a method for forming the same |
DE2757301A1 (de) * | 1977-12-22 | 1979-07-05 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur umwandlung von strahlung in elektrische energie und verfahren zur herstellung der vorrichtung |
DE2827049A1 (de) * | 1978-06-20 | 1980-01-10 | Siemens Ag | Solarzellenbatterie und verfahren zu ihrer herstellung |
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
DE3000889A1 (de) * | 1980-01-11 | 1981-07-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von solarzellen |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US406452A (en) * | 1889-07-09 | Method of making cannon | ||
FR2133498B1 (de) * | 1971-04-15 | 1977-06-03 | Labo Electronique Physique | |
GB1342972A (en) * | 1971-08-28 | 1974-01-10 | Wildt Mellor Bromley Ltd | Knitting machine needle |
JPS5631297B2 (de) * | 1973-05-29 | 1981-07-20 | ||
US3979271A (en) * | 1973-07-23 | 1976-09-07 | Westinghouse Electric Corporation | Deposition of solid semiconductor compositions and novel semiconductor materials |
FR2265872B1 (de) * | 1974-03-27 | 1977-10-14 | Anvar | |
US3969163A (en) * | 1974-09-19 | 1976-07-13 | Texas Instruments Incorporated | Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases |
JPS51113481A (en) * | 1975-03-28 | 1976-10-06 | Sony Corp | Semiconductor device |
JPS51141587A (en) * | 1975-05-30 | 1976-12-06 | Sharp Kk | Method of producing solar battery |
AU503228B2 (en) * | 1975-07-28 | 1979-08-30 | Rca Corp. | Semiconductor device |
US4152535A (en) * | 1976-07-06 | 1979-05-01 | The Boeing Company | Continuous process for fabricating solar cells and the product produced thereby |
US4042418A (en) | 1976-08-02 | 1977-08-16 | Westinghouse Electric Corporation | Photovoltaic device and method of making same |
US4117506A (en) * | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
DE2746967C2 (de) * | 1977-10-19 | 1981-09-24 | Siemens AG, 1000 Berlin und 8000 München | Elektrofotographische Aufzeichnungstrommel |
US4265991A (en) * | 1977-12-22 | 1981-05-05 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and process for production thereof |
US4264962A (en) | 1978-02-07 | 1981-04-28 | Beam Engineering Kabushiki Kaisha | Small-sized electronic calculator |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
US4202928A (en) * | 1978-07-24 | 1980-05-13 | Rca Corporation | Updateable optical storage medium |
JPS5529154A (en) * | 1978-08-23 | 1980-03-01 | Shunpei Yamazaki | Semiconductor device |
JPS5559783A (en) * | 1978-10-27 | 1980-05-06 | Canon Inc | Electronic device with solar battery |
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
GB2038086A (en) * | 1978-12-19 | 1980-07-16 | Standard Telephones Cables Ltd | Amorphous semiconductor devices |
JPS5934421B2 (ja) * | 1979-11-29 | 1984-08-22 | 住友電気工業株式会社 | 薄膜製造法 |
GB2083704B (en) * | 1980-09-09 | 1985-08-21 | Energy Conversion Devices Inc | Amorphous semiconductors |
-
1980
- 1980-05-19 US US06/151,301 patent/US4400409A/en not_active Expired - Lifetime
-
1981
- 1981-05-08 ZA ZA00813076A patent/ZA813076B/xx unknown
- 1981-05-12 PH PH25624A patent/PH18408A/en unknown
- 1981-05-12 MX MX187268A patent/MX155307A/es unknown
- 1981-05-15 IE IE1099/81A patent/IE52688B1/en not_active IP Right Cessation
- 1981-05-15 GB GB8114920A patent/GB2076433B/en not_active Expired
- 1981-05-15 JP JP56073356A patent/JPS5743413A/ja active Granted
- 1981-05-15 BR BR8103030A patent/BR8103030A/pt not_active IP Right Cessation
- 1981-05-15 FR FR8109735A patent/FR2482786B1/fr not_active Expired
- 1981-05-15 IL IL62883A patent/IL62883A/xx unknown
- 1981-05-15 IT IT21753/81A patent/IT1135827B/it active
- 1981-05-15 CA CA000377664A patent/CA1184096A/en not_active Expired
- 1981-05-15 DE DE3119481A patent/DE3119481C2/de not_active Expired - Lifetime
- 1981-05-15 DE DE3153269A patent/DE3153269C2/de not_active Expired - Lifetime
- 1981-05-15 IN IN521/CAL/81A patent/IN155670B/en unknown
- 1981-05-15 DE DE3153270A patent/DE3153270C2/de not_active Expired - Lifetime
- 1981-05-15 KR KR1019810001678A patent/KR840000756B1/ko active
- 1981-05-15 SE SE8103043A patent/SE456380B/sv not_active IP Right Cessation
- 1981-05-15 NL NL8102411A patent/NL8102411A/nl not_active Application Discontinuation
- 1981-05-15 JP JP1152074A patent/JP2539916B2/ja not_active Expired - Lifetime
- 1981-05-18 AU AU70653/81A patent/AU542845B2/en not_active Ceased
- 1981-05-18 ES ES502281A patent/ES502281A0/es active Granted
- 1981-05-19 JP JP56075588A patent/JPS57122581A/ja active Granted
-
1982
- 1982-05-31 ES ES512729A patent/ES512729A0/es active Granted
- 1982-05-31 ES ES512728A patent/ES8306921A1/es not_active Expired
-
1983
- 1983-09-05 GB GB08323741A patent/GB2147316B/en not_active Expired
- 1983-09-05 GB GB08323742A patent/GB2146045B/en not_active Expired
-
1984
- 1984-07-30 KR KR1019840004525A patent/KR890003499B1/ko not_active IP Right Cessation
- 1984-07-30 KR KR1019840004524A patent/KR890003498B1/ko not_active IP Right Cessation
- 1984-10-31 AU AU34874/84A patent/AU556596B2/en not_active Ceased
- 1984-10-31 AU AU34875/84A patent/AU556493B2/en not_active Ceased
-
1985
- 1985-04-11 JP JP60077525A patent/JPS6122622A/ja active Granted
-
1986
- 1986-03-12 JP JP61054540A patent/JPS61287176A/ja active Granted
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
DE2638269A1 (de) * | 1976-08-25 | 1978-03-02 | Wacker Chemitronic | Verfahren zur herstellung von substratgebundenem, grossflaechigem halbleitermaterial |
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4133697A (en) * | 1977-06-24 | 1979-01-09 | Nasa | Solar array strip and a method for forming the same |
DE2757301A1 (de) * | 1977-12-22 | 1979-07-05 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur umwandlung von strahlung in elektrische energie und verfahren zur herstellung der vorrichtung |
DE2827049A1 (de) * | 1978-06-20 | 1980-01-10 | Siemens Ag | Solarzellenbatterie und verfahren zu ihrer herstellung |
DE3000889A1 (de) * | 1980-01-11 | 1981-07-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von solarzellen |
Non-Patent Citations (1)
Title |
---|
Thin Solid Films, 3(1969), S. 201-228 * |
Also Published As
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
Q172 | Divided out of (supplement): |
Ref country code: DE Ref document number: 3119481 |
|
8110 | Request for examination paragraph 44 | ||
8181 | Inventor (new situation) |
Free format text: OVSHINSKY, STANFORD R., BLOOMFIELD HILLS, MICH., US CANNELLA, VINCENT D., DETROIT, MICH., US IZU, MASATSUGU, BIRMINGHAM, MICH., US |
|
AC | Divided out of |
Ref country code: DE Ref document number: 3119481 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8363 | Opposition against the patent | ||
8331 | Complete revocation |