JPS5529154A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5529154A JPS5529154A JP10251678A JP10251678A JPS5529154A JP S5529154 A JPS5529154 A JP S5529154A JP 10251678 A JP10251678 A JP 10251678A JP 10251678 A JP10251678 A JP 10251678A JP S5529154 A JPS5529154 A JP S5529154A
- Authority
- JP
- Japan
- Prior art keywords
- grow
- crystal
- impurities
- layers
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000004952 Polyamide Substances 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 abstract 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
PURPOSE:To eliminate uneveness of crystal pattern and occurrence of defective crystal and also to improve backward characteristics, when forming at least 2 armophous semiconductor layers having different energy bands on base plates, by changing in advance stoichiometric ratios of these substances. CONSTITUTION:Non-single crystal layers including amorphous layer are piled in layers and made to grow on an electro-conductive base plate such as metal or semiconductor, etc., or on an insulated base plate such as polyamide or vinyl chloride. Thus, those base plates to be made to grow are put into a react or made of quartz, and then, the reactor is kept at reduced pressure of 0.1-10 Torr, supplied with PH3 and AsH3 gases containing such impurities as P and As and a silicic compound gas containing SiH4, etc., and a carrier gas containing HCl, etc., and heated to allow an n type layer to grow. Then, the reactor is supplied with gallium chloride containing such impurities as Ga and B, etc., and also B2H6 gas for allowing a p type layer to grow. At this time, impurities concentration is selecbed within a range of 10<14>-5X10<22>/cm<3> and temperature is selected within a range of 0-900 deg.C so that the structure becomes amorphous or multi-crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10251678A JPS5529154A (en) | 1978-08-23 | 1978-08-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10251678A JPS5529154A (en) | 1978-08-23 | 1978-08-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529154A true JPS5529154A (en) | 1980-03-01 |
Family
ID=14329514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10251678A Pending JPS5529154A (en) | 1978-08-23 | 1978-08-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529154A (en) |
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5764989A (en) * | 1980-10-08 | 1982-04-20 | Nippon Telegr & Teleph Corp <Ntt> | Double method-junction type photosemiconductor device |
US4377723A (en) * | 1980-05-02 | 1983-03-22 | The University Of Delaware | High efficiency thin-film multiple-gap photovoltaic device |
US4450316A (en) * | 1981-07-17 | 1984-05-22 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous silicon photovoltaic device having two-layer transparent electrode |
US4460670A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, N or O and dopant |
US4572881A (en) * | 1980-06-25 | 1986-02-25 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
JPS61287176A (en) * | 1980-05-19 | 1986-12-17 | エナジー・コンバーション・デバイセス・インコーポレーテッド | Substrate and photovoltaic device having the same |
US4642144A (en) * | 1983-10-06 | 1987-02-10 | Exxon Research And Engineering Company | Proximity doping of amorphous semiconductors |
US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US4889782A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic photocopying machine |
US4971872A (en) * | 1980-06-25 | 1990-11-20 | Shunpei Yamazaki | Electrostatic photocopying machine |
US4999270A (en) * | 1980-06-25 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5008171A (en) * | 1980-06-25 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
USRE35198E (en) * | 1978-03-03 | 1996-04-02 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
US5543636A (en) * | 1984-05-18 | 1996-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor |
US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
US6180991B1 (en) * | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
US6236064B1 (en) * | 1991-03-15 | 2001-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6337731B1 (en) | 1992-04-28 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
-
1978
- 1978-08-23 JP JP10251678A patent/JPS5529154A/en active Pending
Non-Patent Citations (2)
Title |
---|
IEEE TRANSACTIONS ON ELECTRON DEVICES=1977 * |
PHILOSOPHICAL MAGAZINE=1977 * |
Cited By (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE35198E (en) * | 1978-03-03 | 1996-04-02 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
US4377723A (en) * | 1980-05-02 | 1983-03-22 | The University Of Delaware | High efficiency thin-film multiple-gap photovoltaic device |
JPS61287176A (en) * | 1980-05-19 | 1986-12-17 | エナジー・コンバーション・デバイセス・インコーポレーテッド | Substrate and photovoltaic device having the same |
JPH0461510B2 (en) * | 1980-05-19 | 1992-10-01 | Enaajii Konbaajon Debaisesu Inc | |
US5303007A (en) * | 1980-06-25 | 1994-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing apparatus for electrostatic photocopying |
US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US4572881A (en) * | 1980-06-25 | 1986-02-25 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
US4582770A (en) * | 1980-06-25 | 1986-04-15 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
US4587187A (en) * | 1980-06-25 | 1986-05-06 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
US4598031A (en) * | 1980-06-25 | 1986-07-01 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
US4600670A (en) * | 1980-06-25 | 1986-07-15 | Shunpei Yamazaki | Printing member for electrostatic photocopying |
US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US4889782A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic photocopying machine |
US4971872A (en) * | 1980-06-25 | 1990-11-20 | Shunpei Yamazaki | Electrostatic photocopying machine |
US4999270A (en) * | 1980-06-25 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5008171A (en) * | 1980-06-25 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
JPS5764989A (en) * | 1980-10-08 | 1982-04-20 | Nippon Telegr & Teleph Corp <Ntt> | Double method-junction type photosemiconductor device |
US4450316A (en) * | 1981-07-17 | 1984-05-22 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous silicon photovoltaic device having two-layer transparent electrode |
US4499331A (en) * | 1981-07-17 | 1985-02-12 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous semiconductor and amorphous silicon photovoltaic device |
US4491682A (en) * | 1981-07-17 | 1985-01-01 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous silicon photovoltaic device including a two-layer transparent electrode |
US4460670A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, N or O and dopant |
USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
US6180991B1 (en) * | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
US4642144A (en) * | 1983-10-06 | 1987-02-10 | Exxon Research And Engineering Company | Proximity doping of amorphous semiconductors |
US6660574B1 (en) | 1984-05-18 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a semiconductor device including recombination center neutralizer |
US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
US6680486B1 (en) | 1984-05-18 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
US5543636A (en) * | 1984-05-18 | 1996-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor |
US6734499B1 (en) | 1984-05-18 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
US6635520B1 (en) | 1984-05-18 | 2003-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
US6011277A (en) * | 1990-11-20 | 2000-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US6023075A (en) * | 1990-12-25 | 2000-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US6236064B1 (en) * | 1991-03-15 | 2001-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6337731B1 (en) | 1992-04-28 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US7554616B1 (en) | 1992-04-28 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
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