CN201762092U - Device for forming nanostructure by adopting patterned electrode induction and microwave curing - Google Patents
Device for forming nanostructure by adopting patterned electrode induction and microwave curing Download PDFInfo
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- CN201762092U CN201762092U CN2010201994933U CN201020199493U CN201762092U CN 201762092 U CN201762092 U CN 201762092U CN 2010201994933 U CN2010201994933 U CN 2010201994933U CN 201020199493 U CN201020199493 U CN 201020199493U CN 201762092 U CN201762092 U CN 201762092U
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- polarizing electrode
- pattern polarizing
- substrate
- electrode
- microwave curing
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Abstract
The utility model discloses a device for forming a nanostructure by adopting patterned electrode induction and microwave curing. The device comprises a forming system, a forming material, a foundation base, a nanostructure induction system and a microwave curing system; the forming system comprises a back plate, a support and a patterned electrode; the forming material adopts a liquid thermosetting epoxy material with low viscosity and high dielectric constant; the foundation base adopts a P-shaped silicon slice; the nanostructure induction system takes the patterned electrode as the anode of a direct current electric field and the foundation base as the cathode of the direct current electric field; the patterned electrode is positioned above the foundation base; the anode of the nanostructure induction system is connected with the patterned electrode; and the cathode of the nanostructure induction system is connected with the foundation base. The device has the advantages of simple structure, low cost, high production rate, long service life of the electrode, high precision in patterns, and the like, and is capable of realizing the production of the nanostructure of lower than 100 nanometers.
Description
Technical field
The utility model belongs to the Micrometer-Nanometer Processing Technology field, relates to a kind of pattern polarizing electrode and induces the device of making nanostructured with microwave curing.
Background technology
The microfabrication of nanostructured or figure is the basis that nano-electron and nano parts are made, the preparation method of present nanostructured has multiple, mainly comprises extreme ultraviolet photoetching EUVL, e-beam direct write lithography, ion beam projection lithography, X X-ray lithography X, scan-probe micro-manufactured, molecule self assembly, dips in a photoetching, micro-contact printing, nano-imprint lithography etc.But the common complex process of these technology, lower, the apparatus expensive of efficient.Though for example e-beam direct write lithography has very high precision, production efficiency is very low.Though nano-imprint lithography NIL has characteristics such as high-resolution, low cost and high production rate because NIL is a kind of contact manufacture craft, at present nano impression face die life low, defective is many, be difficult to problem such as aligning.Therefore, press for the new fine machining method of exploitation and satisfy low-cost high-resolution nano-structure making demand.
The utility model content
, defective low at the metallic mold for nano-imprint life-span in the prior art many with the problem that is difficult to aim at, the utility model discloses a kind of pattern polarizing electrode that adopts and induce the device of on the thermosetting epoxy resin material, making nanostructured with microwave curing.
A kind of pattern polarizing electrode is induced the device of making nanostructured with microwave curing, comprising: formation system; Moulding material; Substrate; The nanostructured inducible system; The microwave curing system, described formation system is made up of backboard, support, pattern polarizing electrode; Moulding material is the liquid thermosetting epoxide resin material of low viscosity and high-k; Substrate is a P type silicon chip; The nanostructured inducible system is the anode of DC electric field with the pattern polarizing electrode, and substrate is the negative electrode of DC electric field, and the pattern polarizing electrode is positioned at the top of substrate, and its anode links to each other with the pattern polarizing electrode, and negative electrode links to each other with substrate.
The voltage of described DC electric field is 20V-60V.
Operating frequency 2.45 GHz of described microwave curing system, power output 100W-1000W, the power way of output is continous way or pulsed, hardening time 20-100s, solidification temperature 60-130 ℃.
Of the present utility model have simple in structure, cost is low, productivity ratio is high, electrode life is long, the pattern precision advantages of higher, has realized efficient, the low-cost production of the following nanostructured of 100 nanometers.
Description of drawings
Fig. 1 a is the utility model producing device structural representation.
Fig. 1 b is the schematic diagram after the utility model producing device structure is finished.
Fig. 2 is the utility model Fabrication of nanostructures technology path figure.
Fig. 3 a is that the utility model pattern polarizing electrode is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 b is that the utility model pattern polarizing electrode is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 c is that the utility model pattern polarizing electrode is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 d is that the utility model pattern polarizing electrode is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 e is that the utility model pattern polarizing electrode is induced and microwave curing making nanostructured schematic diagram.
Fig. 4 a be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with electric conductivity electronics bundle resist.
Fig. 4 b be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with electric conductivity electronics bundle resist.
Fig. 4 c be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with electric conductivity electronics bundle resist.
Fig. 4 d be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with electric conductivity electronics bundle resist.
Fig. 4 e be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with electric conductivity electronics bundle resist.
Fig. 4 f be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with electric conductivity electronics bundle resist.
Fig. 5 a be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with ITO.
Fig. 5 b be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with ITO.
Fig. 5 c be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with ITO.
Fig. 5 d be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with ITO.
Fig. 5 e be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with ITO.
Fig. 5 f be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with ITO.
Fig. 5 g be of the present utility model be that matrix material is made pattern polarizing electrode schematic diagram with ITO.
Wherein, 1. formation system, 11. backboards, 12. support, 13. pattern polarizing electrodes, 131. nanostructureds are induced projection (pattern image that needs transfer), 14. quartz glass substrate, 15. adhere to key-course, 16. ITO conducting films, 17. electric conductivity electronics bundle resist, 18. deposition anti-adhesion layers, 19. electron sensitive resists, 2. moulding material, 3. substrate, 4. DC electric field, 5. microwave curing system.
The specific embodiment
The disclosed pattern polarizing electrode of the utility model is induced with microwave curing and is made nanostructured device schematic diagram such as Fig. 1 a, shown in Fig. 1 b.It is made up of five parts: formation system 1, moulding material 2, substrate 3, DC electric field 4, microwave curing system 5.Wherein formation system 1 is made up of backboard 11, support 12, pattern polarizing electrode 13.Backboard 11 plays support and is connected effect, by backboard 11 will support 12 and pattern polarizing electrode 13 be assembled into a complete formation system, the effect of support 12 is the gaps that make pattern polarizing electrode 13 and substrate 3 keep uniformities, and support 12 induces the difference in height of protruding 131 (pattern images that need transfer) to determine the height of made nanostructured with the nanostructured that pattern polarizing electrode ledge constitutes.Therefore, support 12 height, can obtain the nanostructured of differing heights value by regulating.Its height value is between 100nm-600nm.Pattern polarizing electrode 13 comprises the nanostructured plane characteristic that will make, and promptly pattern polarizing electrode 13 ledges are that nanostructured is induced projection 131.
The demoulding for the ease of after solidifying reduces the adhesion of electrode and moulding material, need carry out finishing to reduce its surface energy to pattern polarizing electrode 13, adopts deposition anti-adhesion layers technology (coating release agent), can select CF for use
3(CF
2)
5(CH
2)
2SiCL
3, CF
3CH
2CH
2SiCL
3Or material such as polytetrafluoroethylene (PTFE) is as releasing agent.Moulding material is that viscosity is lower than 0.8Pa.s/25 ℃ and dielectric constant is higher than 5 number liquid thermosetting epoxide resin materials.With P type silicon chip is substrate 3, adopts silane (Silane) to form carrying out the molecule self assembly at the bottom of the silicon wafer-based.DC electric field 4 adopts the 20V-60V DC voltage, and its anode links to each other with pattern polarizing electrode 13, and cathode substrate 3 links to each other.Operating frequency 2.45 GHz of microwave curing system 5, power output 100W-1000W, the power way of output is continous way or pulsed.
The utility model is based on following principle: place the dielectric fluid between two conductive parallel plates, under the effect of extra electric field, have the electrohydrodynamic unstable characteristic, and self assembly generates the periodically ability of nano-pillar structure.The liquid thermosetting epoxide resin material of low viscosity and high-k evenly is coated with is layered in the substrate 3, its top is a pattern polarizing electrode 13, apply a voltage between substrate 3 and pattern polarizing electrode 13, its anode links to each other with pattern polarizing electrode 13, and negative electrode links to each other with substrate 3.Moulding material 2 surface films " are upwards drawn high " under the effect of extra electric field generation electrostatic force, it is wavy to cause film slowly to present, and variation along with the time, the film of trough can be pushed toward crest always, it is more and more higher to present corrugated film, pattern polarizing electrode 13 is pushed up at final crest tip, is properly fit onto until film till the patrix of pattern polarizing electrode 13.Wherein electrostatic force " is upwards drawn high " forming material film, the instability that causes the forming material film interface, and surface tension, molcohesion, atmospheric pressure and forming material film self gravitation play the effect of stable formation material interface, and surface tension is the main active force of thin film stability.Feature, moulding material initial film thickness, electrode and basal spacing, spacing Film Thickness Ratio by change voltage, pattern polarizing electrode are ratio, the moulding material dielectric constant of electrode and basal spacing and moulding material initial film thickness, can produce the nanostructured of different characteristic.
The utility model is induced with microwave curing making nanostructured based on the pattern polarizing electrode and is taked following technical solution: at first moulding material 2 evenly is spin-coated in the substrate 3; Form the location of system 1 and substrate 3 then, formation system 1 with press down after substrate 3 is aimed at, contact fully with substrate 3 until the support 12 of formation system 1, and assurance backboard 11 and substrate 3 is parallel; Open the nanostructured inducible system subsequently,, realize of the figure transfer of electrode features figure to moulding material based on the self assembly characteristic of forming material film under pattern polarizing electrode 13 and DC electric field 4 are induced; After shaped structure is stable, adopt microwave curing system 5 solidified forming materials 2; At last, formation system 2 separates with the nanostructured and the substrate 3 of preparation, produces nanostructured on moulding material 2.
Induce the technology path of making nanostructured with microwave curing on the thermosetting epoxy resin material referring to Fig. 2 based on the pattern polarizing electrode, its basic working procedure step is as follows: 1. formation system 1 is made; 2. substrate 3 preliminary treatment; 3. be coated with and be paved into shape material 2; 4. formation system 1 is located; 5. induce the generation nanostructured; 6. nanostructured microwave curing; 7. the demoulding.
Induce and microwave curing is made nanostructured process schematic diagram (seeing Fig. 3 a-Fig. 3 e) in conjunction with the pattern polarizing electrode, below the concrete processing step in the manufacturing process be described in detail:
1) formation system is made
Formation system 1 comprises backboard 11, support 12, pattern polarizing electrode 13.By backboard 11 will support 12 and pattern polarizing electrode 13 be assembled into a complete formation system.Backboard and support are that the conventional fine process of matrix adopting is made with quartzy (quartz).Support 12 and need do anti-stiction treatment.Pattern polarizing electrode 13 is a matrix material with electric conductivity electronics bundle resist or ITO, adopts electron-beam direct writing and etching technics.The concrete preparation method of pattern polarizing electrode is as follows.
Fig. 4 a-Fig. 4 f is that the utility model is a matrix material with electric conductivity electronics bundle resist, adopts electron-beam direct writing technology to make the principle schematic of pattern polarizing electrode.Fig. 4 a adheres to key-course 15 for be coated with the shop on quartz glass substrate 14.Fig. 4 b is for being coated with shop ITO conducting film 16 on adhesion key-course 15.Fig. 4 c is coated with shop electric conductivity electronics bundle resist 17 for rotation on ITO conducting film 16.Obtain the nanostructured figure behind Fig. 4 d electron-beam direct writing, exposure, development, the post bake.Fig. 4 e deposition anti-adhesion layers (coating release agent) 18 can be selected CF for use
3(CF
2)
5(CH
2)
2SiCL
3, CF
3CH
2CH
2SiCL
3Or material such as polytetrafluoroethylene (PTFE) is as releasing agent.The pattern polarizing electrode that Fig. 4 f completes is separated with quartz glass substrate.
Fig. 5 a-Fig. 5 g is that the utility model is matrix material with ITO, adopts electron-beam direct writing and dry etch process to make the principle schematic of pattern polarizing electrode.Fig. 5 a adheres to key-course material 15 for be coated with the shop on quartz glass substrate 14.Fig. 5 b is for being coated with shop ITO material 16 on the adhesion key-course.Fig. 5 c is coated with the shop electron sensitive resist for rotation on ITO material 16
19On resist, obtain the nanostructured figure behind Fig. 5 d electron-beam direct writing, exposure, development, the post bake.Fig. 5 e is with electron sensitive resist
19For adopting reactive ion etching process, mask transfers on the ITO material 16 obtaining the nanostructured figure on the resist.Fig. 5 f deposition anti-adhesion layers (coating release agent) 18 can be selected CF for use
3(CF2)
5(CH
2)
2SiCL
3, CF
3CH
2CH
2SiCL
3, material such as polytetrafluoroethylene (PTFE) is as releasing agent.The pattern polarizing electrode that Fig. 5 g completes is separated with quartz glass substrate 14.
Adopt bonding technology, with backboard 11 be the basis will support 12 and pattern polarizing electrode 13 be fixed on the backboard 11, be assembled into a complete formation system 1.
2) substrate 3 preliminary treatment
As substrate, carry out molecule self assembly (SAM, Self-assembled Monolayer) surface treatment at the bottom of adopting Silane to silicon wafer-based with the silicon chip of P type silicon chip, make its surface have hydrophobic property, reduce the surface hydrophilic absorption property.(avoid moulding material to stick in the substrate, recurring structure damages in the process of taking off)
3) be coated with and be paved into the shape material
Adopt rotation to be coated with shop technology low viscosity and high-k liquid thermosetting epoxide resin material evenly are coated with in the substrate 3 of shop, be coated with shop thickness 100nm-300nm(and specifically be coated with shop thickness and determine) according to the micro-nano structure graphic feature of made.
4) formation system 1 location
Formation system 1 with press down after substrate 3 is aimed at, the support 12 of formation system 1 is contacted fully with substrate 3, and guarantees the parallel of backboard 11 and substrate 3.
5) induce the generation nanostructured
With pattern polarizing electrode 13 is anode, and substrate 3 is a negative electrode, applies the 20V-60V DC voltage, constitutes the nanostructured inducible system.After inducible system adds voltage, set up a DC electric field 4,, realize of the figure transfer of electrode features figure to moulding material based on the self assembly characteristic of forming material film under pattern polarizing electrode 13 and DC electric field are induced in pattern polarizing electrode 13 and 3 of substrates.
Should guarantee that in whole technical process electrode is parallel with substrate, the gap of electrode and substrate keeps uniformity.The height in gap can be regulated by the support of formation system.
Embodiment adopts 45 V DC voltages, electrode and basal spacing 300nm, and film thickness monitoring is at 100 nm-200 nm.
6) nanostructured microwave curing
The curing mode of epoxy resin is a lot: traditional heat cure has that solidification rate is slow, the cycle is long, material internal exists thermograde, solidify and be difficult to all even problem completely.Compare with traditional heat cure, microwave is because of " molecule in " of uniqueness even mode of heating, advantages such as having efficiency of heating surface height, conduct heat evenly, curing rate is fast, solidfied material homogeneous, heat energy utilization rate height and process control are easy; In addition, in epoxy resin, add the filler of different performance, improve the microwave absorbing property of epoxy resin, can further improve the efficiency of heating surface of microwave by the dielectric properties that change system.Experimental result shows simultaneously, and under equal conditions the gel time of heating using microwave and specific heat curing hardening time are faster, and shortens along with the increase of microwave power; The structure of microwave curing thing and heat cure thing is basic identical, hot property is suitable, and mechanical property is a little more than the heat cure thing.
The liquid thermosetting epoxy resin molding material that the utility model uses should have low viscosity, high-k and excellent microwave curing performance.The present embodiment moulding material adopts the E51/DDM(diaminodiphenyl-methane) system, epoxy resin is the E51(bisphenol A-type), curing agent is DDM.Also can selectivity can better novel liquid-state epoxy resin curing agent ZD-1090(viscosity little, the operating period long, the temperature tolerance is big).Also there are many low viscosity epoxy resin products directly to use in the market, as WHUT-RL series, JY-257 etc.In addition, with the bisphenol A type epoxy resin ratio, adopt the co-mixing system of liquid bisphenol F type epoxy resin, Bisphenol F type and bisphenol A-type to have more performance (viscosity is low).In addition,, can in epoxy curing systems, add a kind of medium of strong suction ripple, as pottery, metal dust (aluminium powder, copper powder etc.), carbonyl iron, SiO in order to improve the microwave absorbing property of epoxy curing systems
2Or nano material etc. changes the electrical impedance of system, thereby strengthens the heating using microwave ability of curing system, improves the microwave curing performance of moulding material.
Use LC3600 epoxy resin among first embodiment, solidification temperature is at 90 ℃, and be 75s its abundant hardening time, coating thickness 100 nm, electrode and basal spacing 250nm.
Second embodiment: use Epikate 235 liquid bisphenol F type epoxy resin, solidification temperature is at 110 ℃, and be 65s its abundant hardening time, coating thickness 120 nm, electrode and basal spacing 300nm.
In order to reduce hardening time and to obtain good curing performance, also can adopt the variable frequency microwave curing process.
7) demoulding
After the nanostructured that generates is solidified fully, close nanostructured inducible system and microwave curing system, formation system separates with the nanostructured and the substrate of preparation.
Claims (3)
1. a pattern polarizing electrode is induced the device of making nanostructured with microwave curing, comprising: formation system; Moulding material; Substrate; The nanostructured inducible system; The microwave curing system is characterized in that, described formation system is made up of backboard, support, pattern polarizing electrode; Moulding material evenly is spin-coated in the substrate; Substrate is a P type silicon chip; The nanostructured inducible system is the anode of DC electric field with the pattern polarizing electrode, and substrate is the negative electrode of DC electric field, and the pattern polarizing electrode is positioned at the top of substrate, and its anode links to each other with the pattern polarizing electrode, and negative electrode links to each other with substrate.
2. pattern polarizing electrode as claimed in claim 1 is induced the device of making nanostructured with microwave curing, it is characterized in that the voltage of described DC electric field is 20V-60V.
3. pattern polarizing electrode as claimed in claim 1 is induced the device of making nanostructured with microwave curing, it is characterized in that, operating frequency 2. 45 GHz of described microwave curing system, power output 100W-1000W, the power way of output is continous way or pulsed, hardening time 20-100s, solidification temperature 60-130 ℃.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201994933U CN201762092U (en) | 2010-05-24 | 2010-05-24 | Device for forming nanostructure by adopting patterned electrode induction and microwave curing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201994933U CN201762092U (en) | 2010-05-24 | 2010-05-24 | Device for forming nanostructure by adopting patterned electrode induction and microwave curing |
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| CN201762092U true CN201762092U (en) | 2011-03-16 |
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| CN2010201994933U Expired - Fee Related CN201762092U (en) | 2010-05-24 | 2010-05-24 | Device for forming nanostructure by adopting patterned electrode induction and microwave curing |
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2010
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110316 Termination date: 20110524 |