CN100585491C - Large area periodic array three-dimensional microstructure preparation method - Google Patents
Large area periodic array three-dimensional microstructure preparation method Download PDFInfo
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- CN100585491C CN100585491C CN200710015200A CN200710015200A CN100585491C CN 100585491 C CN100585491 C CN 100585491C CN 200710015200 A CN200710015200 A CN 200710015200A CN 200710015200 A CN200710015200 A CN 200710015200A CN 100585491 C CN100585491 C CN 100585491C
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Abstract
The invention discloses a large-area periodical array 3D microstructure preparing method, based on UV nano press printing technique, adopting soft mould and inverse pressure printing to implement low-cost preparation of large-area periodical array 3D microstructure and its basic process flow includes: 1. making small master by electron beam direct write photoetching and dry etching; 2. making large master by small master step-pressure printing and accurate micro-electroforming; 3. pouring liquid PDMS material to large master by vacuum assistance to make silicon rubber soft mould; 4. using quartz glass as substrate and making anti-adhesion surface preprocessing on the substrate; 5. using the ready-made silicon rubber soft mould, and combining with the inversing pressure printing to prepare large area periodical array 3D microstructure on the substrate. And the method has advantages of low cost, process simple, suitable to large batch production, and low cost preparation.
Description
Technical field
The present invention relates to a kind of microstructure method for making, relate in particular to a kind of large area periodic array three-dimensional microstructure preparation method cheaply.
Background technology
Along with the deep development of MEMS (micro electro mechanical system) (MEMS) technology, material, the structure of forming micro-system become increasingly complex.Preparation has more and more urgent demand to many MEMS devices such as micro-optical device, micro-fluidic device, micro fuel cell bipolar plates, flexible solar battery for the large-area three-dimensional microstructure.The large-area three-dimensional microstructure that these MEMS devices are comprised is normally formed by many little three-dimensional microstructures unit periodic arrays with same structure.For example, the research of relevant bipolar plate flow field both at home and abroad is verified, compares with existing rectangle, trapezoidal or triangular-section raceway groove, and the bipolar plates of shaped form cross section raceway groove has more performance, and shaped form cross section raceway groove is a kind of large-area three-dimensional microstructure.For organic solar batteries, if can produce heterojunction, can effectively improve photoelectric transformation efficiency at organic active layer with three-dimensional microstructures feature, improve the performance of organic solar batteries greatly.Other typical case uses and also comprises array-type LED, LCD and plasma display photon display devices such as (barrier of PDP are typical large area periodic array three-dimensional microstructure).Although the method for making of three-dimensional microstructures is nearly tens kinds at present, every kind of technology all has its outstanding feature and the scope of application, and the low-cost production of large-area three-dimensional microstructure remains technological difficulties of microfabrication.Therefore, press for developing low-cost and make large-area three-dimensional microstructure new technology, to satisfy these micro elements preparation technology's requirement.
Nano impression is a kind of low cost, large tracts of land, high efficiency micro-nano structure replica technology.Than existing projection lithography and other photoetching of future generation (NGL) technology, have characteristics such as resolution height, Ultra Low Cost (internal authority mechanism assesses the micro-embossing of equal production technique than the low at least order of magnitude of traditional optical projection lithography) and high productivity.It adopts traditional little replica mechanism of machine die to replace comprising the traditional complicated optical lithography of optics, chemistry and photochemical reaction mechanism, avoided special exposure electron gun, high precision lens system, utmost point short wavelength lenses system and resist resolution are subjected to the restriction and the requirement of light half-wavelength effect, the minimum feature size of impression can reach 6nm at present.Be included into 2005 editions international semiconductor blueprint (ITRS), and come ITRS blueprint 16nm node.Nano impression has been showed wide application prospect, as is used to make the quantum magnetic disc, the DNA electrophoresis chip, and the GaAs photodetector, the waveguide polarizer, the silicon field-effect pipe, the high density magnetic structure, the GaAs quantum device is received Mechatronic Systems and microwave integrated circuit etc.Now numerous well-known universities such as the RWTH of the Paul Scherrer research institute of Princeton university, University of Texas, Harvard University, University of Michigan, Lincoln laboratory, Motorola, Hewlett-Packard and Switzerland, Germany and research institution all are being devoted to the research of nano imprint lithography, exploitation and application.Existing main flow nano imprint lithography is mainly with the hot padding of Princeton University, ultraviolet stamping and Harvard University's micro-contact printing representative of University of Texas.Based on ultraviolet light nanometer embossing (UV-NIL), the present invention proposes a kind of new method that adopts soft mold and contrary imprint process to realize the low-cost preparation of large area periodic array three-dimensional microstructure.
Summary of the invention
Purpose of the present invention is exactly in order to solve problems such as present large-area three-dimensional microstructure complex manufacturing technology, production cost height and production efficiency are low, and a kind of large area periodic array three-dimensional microstructure preparation method that production cost is low, technology simple, be fit to advantages such as making in enormous quantities that has is provided.
To achieve these goals, the present invention takes following technical solution:
A kind of large area periodic array three-dimensional microstructure preparation method based on the ultraviolet light nanometer embossing, adopts soft mold and contrary imprint process to realize that large area periodic array three-dimensional microstructure prepares cheaply, and its typical process flow is:
(1) makes little mother matrix with e-beam direct write lithography and dry etching;
(2) make big mother matrix by little mother matrix stepping impression and accurate little electroforming;
(3) turn over system silicon rubber soft mold by vacuum aided to big mother matrix pouring liquid silicon rubber PDMS material;
(4) with the quartz glass be substrate, it is carried out the substrate surface pre-service of anti-adhesive;
(5) utilize the silicon rubber soft mold that completes, on matrix material, prepare large area periodic array three-dimensional microstructure in conjunction with contrary imprint process.
It is characterized in that in the described step (1), the little mother matrix method that contains three-dimensional microstructures with the preparation of e-beam direct write lithography and dry etching is,
1. at glass deposition one deck ito thin film, adopt PECVD deposition SiO subsequently
2, its thickness determines according to prepared microstructure graph;
2. at SiO
2Last rotation is coated with shop electron beam resist PMMA, and adopts e-beam direct write lithography to make microstructure graph, and the back of developing obtains the microstructure features pattern on electron beam resist.
3. dry etching SiO
2After removing photoresist, form the little mother matrix that contains the three-dimensional microstructures feature.
In the described step (2), make big mother matrix method by little mother matrix stepping impression and accurate little electroforming process and be,
1. the Seed Layer Cr/Cu that at first the follow-up electroforming process of sputter is used on the silicon circular wafer is coated with the used photoresist of shop UV-NIL then thereon;
2. utilize the mould of little mother matrix, press to after aligning to be coated with and be layered on on-chip photoresist as impression;
3. adopt ultraviolet light that photoresist is fully exposed;
4. after the full solidification, the demoulding impresses out microstructure unit on photoresist;
5. stepping repeats above processing step, prepares periodic array three-dimensional microstructure on whole silicon circular wafer;
6. metallic nickel is deposited in the microstructure die cavity of photoresist, form transoid microstructure mould;
7. mould is combined with metal-backed, obtain the big mother matrix mould of metal after the demoulding.
In the described step (3), silicon rubber soft mold preparation method is,
1. quartzy backing is made: at first will make quartzy backing when making impressing mould, quartz glass is carried out surface correct grinding and polishing;
2. aim at the making of pattern: make the pattern that is used to aim on impressing mould, the pattern of aligning and pattern transition range are on two planes;
3. the batching: rubber monomer and hardening agent carry out proportioning, mixing and stirring at 10: 1 by mass ratio;
4. cast molding: the batching that will prepare is cast on the master mold;
5. vacuumize: the silicon rubber that is cast on the master mold is vacuumized, and vacuum tightness is 213 * 10
-2Pa gets rid of the silicon rubber air entrapment, with the replica quality of assurance silicon rubber and the homogeneity after the silicon rubber curing;
6. heated at constant temperature, curing: curing process parameter is: 40 ℃ of temperature, and the time is 45h;
7. the demoulding: the mould after will solidifying separates from the pattern mother matrix, can finish the making of whole soft mold.
In the described step (4), be, adopt nitrogen stream and ultrasonic cleaning technology to carry out the cleaning of quartz glass substrate, clean the back and in 180 ℃ of baking ovens, toasted 3 hours the preprocess method of substrate; Carry out the making of substrate alignment mark subsequently, the manufacturing process of substrate alignment mark: at first adopt low-pressure chemical vapor deposition method at quartz glass surface deposition 600nm chromium layer; Adopt rotation to be coated with shop one deck positive photoresist on the Cr surface subsequently; Evenly be coated with spread photoresist after, expose, develop; At last, adopt reactive ion etching that unnecessary Cr is got rid of, and sputter one deck Al
2O
3Transparent protective film repeatedly is used with the protection figure.
In the described step (5), the contrary imprinting moulding method of large-area three-dimensional microstructure is,
1. the silicon rubber soft mold surface-coated release agent after completing;
2. pouring liquid matrix material in silicon rubber soft mold die cavity, and make its surperficial levelling;
3. the matrix material after mould and the levelling processing is overturn together, press to quartz glass substrate;
4. in transparent glass substrate one side, use UV that matrix material is fully exposed;
5. after the full solidification, the demoulding;
6. on matrix material, copy the large area periodic array three-dimensional microstructure feature.
Described matrix material can select UV-NIL such as MonoMat, PAK01, AMONIL MMS 3 and mrUVCur06 to use various photoresists.
The invention has the beneficial effects as follows: manufacture craft is simple, low, the suitable making in enormous quantities of production cost, easy to make, realize the low-cost preparation of large area periodic array three-dimensional microstructure, thereby provide a kind of brand-new low-cost mass preparation technology for large area periodic array three-dimensional microstructure.
Description of drawings
Fig. 1 is large-area three-dimensional microstructure manufacture craft technology path figure of the present invention;
Fig. 2 is a little mastering synoptic diagram of the present invention;
Fig. 3 is that normal temperature, the ultraviolet light polymerization imprinting moulding that the present invention adopts is stamped in the synoptic diagram that the manufacturing cycle array three-dimensional microstructure is gone up by the brilliant unit of full wafer by little mother matrix stepping;
Fig. 4 of the present inventionly makes big mother matrix synoptic diagram in conjunction with little mother matrix stepping impression and accurate little electroforming;
Fig. 5 is the structural drawing of the soft impressing mould profile of silicon rubber used of the present invention;
Fig. 6 is a silicon rubber soft mold manufacture craft process flow diagram of the present invention;
Fig. 7 is that soft mold alignment mark of the present invention is made synoptic diagram;
Fig. 8 is that the present invention adopts " soft mold " and " contrary impression " technology to make the synoptic diagram of large-area three-dimensional microstructure on matrix material.
Wherein, 1. metal-backed, 2. quartzy backing, 3. pattern transition range, 4. alignment mark pattern.
Embodiment
The invention will be further described below in conjunction with accompanying drawing and embodiment.
The used mould of nano impression can be divided into soft mold and hard mold according to material hardness.The surface energy height of hard mold material, close with resist surface energy after solidifying, stick together easily, be difficult for the demoulding.Must influence impression efficient greatly at the mould surface spraying release agent in actual use.And, also stick together easily even sprayed release agent.The demoulding for the large-area three-dimensional microstructure is particularly difficult.In addition because the parallelism error and the flatness tolerance issues that exist between substrate surface and the hard mold surface, cause between hard mold and the substrate surface to contact effect relatively poor, also limited the useful area of pattern conversion simultaneously.Soft mold is compared with hard mold, its sharpest edges are that mold materials has certain elasticity, can be good at adapting to flatness tolerance and depth of parallelism error problem between mould and the substrate, can increase the imprinting area area, improve impression efficient, satisfy the requirement of large-area nano imprint process.But the elasticity of soft mold has also been introduced the problem on deformation in the moulding process, the failure that this distortion can cause pattern to shift equally.Because the loaded load in the impression loading procedure must be accurately controlled in the pattern distortion that die deformation causes, cause loading procedure complicated in order to control and to eliminate.By contrasting various correlative factors, find that soft mold is compared with hard mold has following advantage: the resist curing and demolding is easy in the nano-imprint process that adopts the ultraviolet light polymerization resist; It is big that the single pattern shifts area, is fit to the making of large-area three-dimensional microstructure.Existing soft mold material mainly contains PDMS, photosensitive resin and PMMA, comprehensive relatively they the ultraviolet light permeability, with various characteristics such as resist adhesive, choose dimethyl silicone polymer (PDMS) as the impressing mould material, because silicon rubber PDMS material does not possess mechanical hardness, therefore must use a kind of hard material as support, so impressing mould is by elastic mould and quartzy the composition.Quartz can guarantee that as stiffener whole impressing mould has loading strength and ultraviolet light transmission, and elastic mould and quartz are fixed together by bonding.
" just impressing " technology of micro-embossing is comparatively ripe, can realize the various nanostructureds shapings of small size, the following characteristic dimension of 6nm, and at MEMS, little/as to receive and obtained application in the optoelectronic device manufacturing.The large-area three-dimensional microstructure is made if adopt traditional " just impressing " technology, the big force of impression that need apply mould, soft mold is easy to generate distortion on the one hand, be easy on the other hand adhere to, cause resist curing and demolding difficulty, the difficulty of having aggravated the demoulding for the large-area three-dimensional microstructure more." contrary impression " technology substrate microstructure is shaped and depends on the adhesive transfer of organic photo-curing material of patternization to substrate, but not " just impressing " relies on the forced shaping of mould to material like that, therefore the force of impression that contrary impression needs is very little, thereby has reduced the stress deformation of base material and mould.This guarantees the precision of large area imprinting pattern on the one hand, reduces the possibility that sticks together on the other hand, compares with " just impressing " technology, and die deformation is little, and the demoulding is easy.The most key technology one of " contrary impression " technology is that die surface is handled, and reduces its surface energy, to guarantee the demoulding smoothly, realizes that polymeric material adheres on the quartz glass substrate from the mould disengagement.The 2nd, the surface of quartz glass substrate to be handled, the adhesion strength of accurately controlling matrix material and quartz glass substrate surface is (because need have higher adhesion strength on the one hand, to guarantee that matrix material is broken away from from mould; On the other hand, again too high adhesion strength can not be arranged, because subsequent technique need strip down the microstructure that completes from quartz glass substrate).Therefore, one aspect of the present invention need be handled (steaming degree polytetrafluoroethylene thin layer or surface silicon alkanisation are handled) to die surface, reduces its surface energy, to guarantee the non-infiltration of matrix material to die surface.Then need on the other hand accurately to control its adhesion strength to matrix material by to quartz glass substrate surface-coated adhesiveness control material layer.
The technology path for preparing large area periodic array three-dimensional microstructure based on soft mold and contrary imprint process on matrix material comprises: 1. little mastering referring to Fig. 1; 2. big mastering; 3. the making of PDMS soft mold; 4. substrate pre-service; 5. the contrary imprinting moulding of large-area three-dimensional microstructure.
1) little mastering
The little mother matrix that contains the three-dimensional microstructures feature with e-beam direct write lithography and dry etching preparation.Fig. 2 is deposited on SiO on the glass substrate by etching
2Layer is made the principle schematic of little mother matrix.A figure is at glass deposition one deck ito thin film, adopts PECVD deposition SiO subsequently
2, its thickness determines according to prepared microstructure graph; B figure is at SiO
2Last rotation is coated with shop electron beam resist PMMA, and adopts e-beam direct write lithography to make microstructure graph, and the back of developing obtains the microstructure features figure on electron beam resist; C figure is dry etching SiO
2After removing photoresist, form the little mother matrix that contains the three-dimensional microstructures feature.
2) big mastering
With the masterplate of little mother matrix, make big mother matrix by little mother matrix stepping impression and accurate little electroforming as nano impression.
Fig. 3 is that what to adopt is that normal temperature, ultraviolet light polymerization imprinting moulding are stamped in the synoptic diagram that the manufacturing cycle array three-dimensional microstructure is gone up by the brilliant unit of full wafer by little mother matrix stepping.A is the Seed Layer Cr/Cu that at first the follow-up electroforming process of sputter is used on the silicon circular wafer among the figure, is coated with the used photoresist (as MonoMat, PAK01 etc.) of shop UV-NIL then thereon.B utilizes the mould of little mother matrix as impression, presses to after aligning to be coated with to be layered on on-chip photoresist.C carries out abundant UV exposure for adopting ultraviolet light to photoresist.After d was full solidification, the demoulding impressed out microstructure unit on photoresist.Stepping repeats above processing step, is preparing periodic array three-dimensional microstructure (microstructure features of little mother matrix is transferred on the photoresist of brilliant unit) on the whole silicon circular wafer.Finish the making of big mother matrix subsequently by the little electroforming of precision.Fig. 4 is the synoptic diagram of accurate little electroforming process.A figure is the periodic array three-dimensional microstructure by the preparation of little mother matrix stepping impression; B figure is a precise electrotyping, metallic nickel (Ni) is deposited in the microstructure die cavity of photoresist, forms transoid microstructure mould.C figure combines mould with metal-backed 1, obtain the big mother matrix mould of metal after the demoulding.
3) making of silicon rubber (PDMS) soft mold
Existing soft mold material mainly contains PDMS, photosensitive resin and PMMA, comprehensive relatively they the ultraviolet light permeability, with various characteristics such as photoresist adhesive, choose PDMS (a kind of silicon rubber) as the impressing mould material, because silastic material does not possess mechanical hardness, therefore must use a kind of hard material as support, so impressing mould is by elastic mould and quartzy the composition.Quartz can guarantee that as stiffener whole impressing mould has loading strength and ultraviolet light transmission, and grating is Mold Making and chromatography alignment mark, and elastic mould and quartz are fixed together by bonding.In the Mold Making process, the casting of elastic mould and with the bonding of quartz be one step completed, therefore guaranteed the surperficial opposing parallel of quartzy stiffener surface and elastic mould.Fig. 5 is the structural drawing of the soft impressing mould profile of silicon rubber PDMS used of the present invention, and it is provided with pattern transition range 3 on quartzy backing 2, is provided with alignment mark pattern 4 in the both sides of quartzy backing 2 simultaneously.
After definite mold materials is PDMS, in order to reach the optimal mechanical physical property of silicon rubber PDMS, and eliminate the defective that PDMS is unfavorable for little replica technology, need the correlation parameter in the strict control Mold Making technological process.Fig. 6 is a silicon rubber PDMS soft mold manufacture craft process flow diagram.It mainly may further comprise the steps:
1. quartzy backing is made.When making impressing mould, at first to make quartzy backing, quartz glass is carried out surface correct grinding and polishing.
2. aim at the making of pattern 4Mark.In nano-imprint lithography technology, owing to carry out overlay alignment and pattern stitching, so must make the pattern (Mark) that is used to aim on the impressing mould.Mark only is used for aiming in moulding process, does not participate in the transfer moulding process of pattern, so Mark and pattern transition range must be on two planes.Owing in imprint process, will guarantee Mark and the relative position that is transferred pattern, when making mould pattern transition range, must therefore make aligning Mark earlier with Mark as alignment mark, its process is as shown in Figure 7.A is a quartz glass among the figure.B is for adopting low-pressure chemical vapor deposition (LPCVD) at quartz surfaces deposition one deck chromium (Cr), and thickness is 600nm.C is coated with shop one deck positive photoresist for adopt rotation to be coated with the shop method on the Cr surface.D is the resist exposure developing process.E gets rid of unnecessary Cr etching for adopting reactive ion etching (RIE), aims at the Mark etching to this and finishes.
3. prepare burden.PDMS monomer and hardening agent carry out proportioning, mixing and stirring at 10: 1 by mass ratio.
4. cast molding.The batching for preparing is cast on the master mold.
5. vacuumize.Vacuumize and have two effects: get rid of and mix back PDMS material internal bubble and vacuum assisted resin infusion.Getting vacuum tightness is 213 * 10-2Pa, promptly can guarantee the replica quality of silicon rubber and the homogeneity after the silicon rubber curing;
6. heated at constant temperature.Main effect is to improve the lower monomer energy of curing activity among the PDMS, makes it participate in curing reaction, guarantees the PDMS full solidification.Curing process parameter is: T=40 ℃, and t=45h, the δ after the curing=017 ‰;
7. the demoulding.Mould after solidifying is separated from the pattern mother matrix, finish the manufacturing process of whole soft mold.
4) substrate pre-service
Adopt nitrogen stream and ultrasonic cleaning technology to carry out the cleaning of quartz glass substrate, clean the back and in 180 ℃ of baking ovens, toasted 3 hours.Carry out the making of substrate alignment mark subsequently, the manufacturing process of substrate alignment mark: at first adopt low-pressure chemical vapor deposition (LPCVD) method at quartz glass surface deposition 600nm chromium layer; Adopt rotation to be coated with shop one deck positive photoresist on the Cr surface subsequently; Evenly be coated with spread photoresist after, expose, develop; At last, adopt reactive ion etching that unnecessary Cr is got rid of, and sputter one deck Al
2O
3Transparent protective film repeatedly is used with the protection figure.
5) the contrary imprinting moulding of large-area three-dimensional microstructure
The contrary imprinting moulding of large-area three-dimensional microstructure is made by following processing step:
1. the silicon rubber soft mold surface-coated release agent after completing;
2. pouring liquid matrix material in silicon rubber soft mold die cavity, and make its surperficial levelling;
3. the matrix material after mould and the levelling processing is overturn together, press to quartz glass substrate;
4. in transparent glass substrate one side, use ultraviolet light (UV) that matrix material is fully exposed;
5. after the full solidification, the demoulding;
6. on matrix material, make the large area periodic array three-dimensional microstructure feature.
Fig. 8 is that the present invention adopts " soft mold " and " contrary impression " technology to make the synoptic diagram of large-area three-dimensional microstructure.A is for to be coated with one deck release agent at the silicon rubber soft mold among the figure.B is a pouring liquid matrix material in the die cavity of silicon rubber soft mold, and the levelling surface.C is pressed to quartz glass substrate for the matrix material after silicon rubber soft mold and the levelling processing is overturn together.D shines from substrate back for utilizing ultraviolet light, the exposure curing molding.After e is abundant photocuring, the demoulding.F prepares large area periodic array three-dimensional microstructure after the demoulding on matrix.
Claims (6)
1. a large area periodic array three-dimensional microstructure preparation method is characterized in that, it adopts soft mold and contrary imprint process to realize that large area periodic array three-dimensional microstructure prepares cheaply based on the ultraviolet light nanometer embossing, and its typical process flow is:
(1) makes little mother matrix with e-beam direct write lithography and dry etching;
(2) make big mother matrix by little mother matrix stepping impression and accurate little electroforming;
(3) turn over system silicon rubber soft mold by vacuum aided to big mother matrix pouring liquid silicon rubber PDMS material;
(4) with the quartz glass be substrate, it is carried out the substrate surface pre-service of anti-adhesive;
(5) utilize the silicon rubber soft mold that completes, on matrix material, prepare large area periodic array three-dimensional microstructure in conjunction with contrary imprint process; Against imprinting moulding method be,
1. the silicon rubber soft mold surface-coated release agent after completing;
2. pouring liquid matrix material in silicon rubber soft mold die cavity, and make its surperficial levelling;
3. the matrix material after mould and the levelling processing is overturn together, press to quartz glass substrate;
4. in transparent glass substrate one side, use UV that matrix material is fully exposed;
5. after the full solidification, the demoulding;
6. on matrix material, copy the large area periodic array three-dimensional microstructure feature.
2. large area periodic array three-dimensional microstructure preparation method according to claim 1 is characterized in that, in the described step (1), the little mother matrix method that contains three-dimensional microstructures with the preparation of e-beam direct write lithography and dry etching is,
1. at glass deposition one deck ito thin film, adopt PECVD deposition SiO subsequently
2, its thickness determines according to prepared microstructure graph;
2. at SiO
2Last rotation is coated with shop electron beam resist PMMA, and adopts e-beam direct write lithography to make microstructure graph, and the back of developing obtains the microstructure features pattern on electron beam resist;
3. dry etching SiO
2After removing photoresist, form the little mother matrix that contains the three-dimensional microstructures feature.
3. large area periodic array three-dimensional microstructure preparation method according to claim 1 is characterized in that, in the described step (2), makes big mother matrix method by little mother matrix stepping impression and accurate little electroforming process and is,
1. the Seed Layer Cr/Cu that at first the follow-up electroforming process of sputter is used on the silicon circular wafer is coated with the used photoresist of shop UV-NIL then thereon;
2. utilize the mould of little mother matrix, press to after aligning to be coated with and be layered on on-chip photoresist as impression;
3. adopt ultraviolet light that photoresist is fully exposed;
4. after the full solidification, the demoulding impresses out microstructure unit on photoresist;
5. 1.-4. stepping repeats above processing step, prepares periodic array three-dimensional microstructure on whole silicon circular wafer;
6. metallic nickel is deposited in the microstructure die cavity of photoresist, form transoid microstructure mould;
7. mould is combined with metal-backed, obtain the big mother matrix mould of metal after the demoulding.
4. large area periodic array three-dimensional microstructure preparation method according to claim 1 is characterized in that, in the described step (3), silicon rubber soft mold preparation method is,
1. quartzy backing is made: at first will make quartzy backing when making impressing mould, quartz glass is carried out surface correct grinding and polishing;
2. aim at the making of pattern: make the pattern that is used to aim on impressing mould, the pattern of aligning and pattern transition range are on two planes;
3. the batching: rubber monomer and hardening agent carry out proportioning, mixing and stirring at 10: 1 by mass ratio;
4. cast molding: the batching that will prepare is cast on the master mold;
5. vacuumize: the silicon rubber that is cast on the master mold is vacuumized, and vacuum tightness is 213 * 10
-2Pa gets rid of the silicon rubber air entrapment, with the replica quality of assurance silicon rubber and the homogeneity after the silicon rubber curing;
6. heated at constant temperature, curing: curing process parameter is: 40 ℃ of temperature, and the time is 45h;
7. the demoulding: the mould after will solidifying separates from the pattern mother matrix, can finish the making of whole soft mold.
5. large area periodic array three-dimensional microstructure preparation method according to claim 1, it is characterized in that, in the described step (4), preprocess method to substrate is, adopt nitrogen stream and ultrasonic cleaning technology to carry out the cleaning of quartz glass substrate, clean the back and in 180 ℃ of baking ovens, toasted 3 hours; Carry out the making of substrate alignment mark subsequently, the manufacturing process of substrate alignment mark: at first adopt low-pressure chemical vapor deposition method at quartz glass surface deposition 600nm chromium layer; Adopt rotation to be coated with shop one deck positive photoresist on the Cr surface subsequently; Evenly be coated with spread photoresist after, expose, develop; At last, adopt reactive ion etching that unnecessary Cr is got rid of, and sputter one deck A1
2O
3Transparent protective film repeatedly is used with the protection figure.
6. large area periodic array three-dimensional microstructure preparation method according to claim 1 is characterized in that, described matrix material is selected MonoMat, PAK01, AMONIL MMS 3 and mrUVCur06 photoresist.
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