CN101837951B - Apparatus and method for graphically producing nano structures by way of electrode induction and microwave curing - Google Patents
Apparatus and method for graphically producing nano structures by way of electrode induction and microwave curing Download PDFInfo
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- CN101837951B CN101837951B CN 201010179565 CN201010179565A CN101837951B CN 101837951 B CN101837951 B CN 101837951B CN 201010179565 CN201010179565 CN 201010179565 CN 201010179565 A CN201010179565 A CN 201010179565A CN 101837951 B CN101837951 B CN 101837951B
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Abstract
The invention relates to an apparatus and a method for graphically producing nano structures by way of electrode induction and microwave curing. The apparatus comprises a molding system, a molding material, a substrate, a nano structure induction system and a microwave curing system. The method for producing nano structures based on the apparatus includes the following steps: (1) the fabrication of the molding system; (2) the preprocessing of the substrate; (3) the coating of the molding material; (4) the positioning of the molding system; (5) the inductive production of a nano structure; (6) the microwave curing of the nano structure; and (7) demolding. The invention is characterized by simple structure, low cost, high productivity, long electrode service life, high pattern precision and the like, and can efficiently produce nano structures less than 100 nanometers at low cost.
Description
Technical field
The invention belongs to the Micrometer-Nanometer Processing Technology field, relate to a kind of pattern polarizing electrode and induce the apparatus and method of making nanostructured with microwave curing.
Background technology
The microfabrication of nanostructured or figure is the basis that nano-electron and nano parts are made, the preparation method of present nanostructured has multiple, mainly comprises extreme ultraviolet photoetching EUVL, e-beam direct write lithography, ion beam projection lithography, X X-ray lithography X, scan-probe micro-manufactured, molecular self-assembling, dips in a photoetching, micro-contact printing, nano-imprint lithography etc.But the common complex process of these technology, lower, the apparatus expensive of efficient.Although for example e-beam direct write lithography has very high precision, production efficiency is very low.Although nano-imprint lithography NIL has the characteristics such as high-resolution, low cost and high production rate because NIL is a kind of contact manufacture craft, at present nano impression face die life low, defective is many, be difficult to the problem such as aligning.Therefore, satisfy low-cost high-resolution nano-structure making demand in the urgent need to developing new fine machining method.
Summary of the invention
, defective low for the metallic mold for nano-imprint life-span in the prior art many with the problem that is difficult to aim at, the invention discloses a kind of adopt the pattern polarizing electrode induce and microwave curing in the apparatus and method of thermosetting epoxy resin material making nanostructured.
A kind of pattern polarizing electrode is induced the device of making nanostructured with microwave curing, comprising: formation system; Moulding material; Substrate; The nanostructured inducible system; The microwave curing system, described formation system is comprised of backboard, support, pattern polarizing electrode; Moulding material is the liquid thermosetting epoxide resin material of low viscosity and high-k; Substrate is P type silicon chip; The anode of nanostructured inducible system take the pattern polarizing electrode as DC electric field, substrate are the negative electrode of DC electric field, and the pattern polarizing electrode is positioned at the top of substrate, and its anode links to each other with the pattern polarizing electrode, and negative electrode links to each other with substrate.
The voltage of described DC electric field is 20V-60V.
The operating frequency 2.45GHz of described microwave curing system, power output 100W-1000W, the power stage mode is continous way or pulsed, hardening time 20-100s, solidification temperature 60-130 ℃.
A kind of pattern polarizing electrode is induced the preparation method of making the nanostructured device with microwave curing, comprises the steps:
1) makes formation system
2) substrate pretreatment
Take P type silicon chip as substrate, carry out the molecular self-assembling surface treatment at the bottom of adopting Silane to silicon wafer-based, make its surface have hydrophobic property, reduce the surface hydrophilic absorption property;
3) be coated with and be paved into the shape material
Adopt rotation to be coated with to spread technique that viscosity is lower than 0.8Pa.s/25 ℃ and dielectric constant and be higher than 5 liquid thermosetting epoxide resin materials and evenly be coated with and spread in the substrate, be coated with and spread thickness 100nm-300nm;
4) formation system location
Formation system with press down after substrate is aimed at, the support of formation system is contacted fully with substrate, and guarantees the parallel of mould and substrate;
5) induce the generation nanostructured
Take the pattern polarizing electrode as anode, substrate is negative electrode, apply the 20V-60V DC voltage, consist of the nanostructured inducible system, after inducible system adds voltage, between pattern polarizing electrode and substrate, set up an electric field, moulding material produces electrostatic force under electric field action, electrostatic force overcomes surface tension, molcohesion, atmospheric pressure and forming material film self gravitation, partially-formed material is upwards attracted, form nano-pillar, nano-pillar is constantly grown under the effect of electric field force, until contact with the pattern polarizing electrode, when electrostatic force and surface tension, molcohesion, atmospheric pressure and forming material film self gravitation electrostatic force reach poised state, copy pattern polarizing electrode nanofeature structure at moulding material, realize that the electrode features figure is to the transfer of moulding material feature structure;
6) nanostructured microwave curing
7) demoulding
Close nanostructured inducible system and microwave curing system, nanostructured and the substrate of formation system and preparation are separated.
Described step 1) is for take electric conductivity electronics bundle resist or tin indium oxide ITO as matrix material, adopt electron-beam direct writing and etching technics to make the pattern polarizing electrode, after the pattern polarizing electrode completes, apply one deck releasing agent at the work outer surface, by backboard will support and the pattern polarizing electrode fit together, the size of pattern polarizing electrode and substrate gap is adjusted by the support of changing differing heights, and its gap is between 100nm-600nm.
In the described step 3), moulding material can add pottery, metallic aluminium powder, copper powders may, carbonyl iron or SiO as required
2Nano material is to change the electrical impedance of moulding material.
In the described step 4), mould is parallel with substrate, the gap uniformity of mould and substrate.
Of the present invention have simple in structure, cost is low, high productivity, electrode life long, the pattern precision advantages of higher, has realized that the following nanostructured of 100 nanometers is efficient, low-cost production.
Description of drawings
Fig. 1 a is producing device structural representation of the present invention.
Fig. 1 b is the schematic diagram after producing device structure of the present invention is finished.
Fig. 2 is Fabrication of nanostructures Technology Roadmap of the present invention.
Fig. 3 a is that pattern polarizing electrode of the present invention is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 b is that pattern polarizing electrode of the present invention is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 c is that pattern polarizing electrode of the present invention is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 d is that pattern polarizing electrode of the present invention is induced and microwave curing making nanostructured schematic diagram.
Fig. 3 e is that pattern polarizing electrode of the present invention is induced and microwave curing making nanostructured schematic diagram.
Fig. 4 a is the pattern polarizing electrode schematic diagram of making take electric conductivity electronics bundle resist as matrix material of the present invention.
Fig. 4 b is the pattern polarizing electrode schematic diagram of making take electric conductivity electronics bundle resist as matrix material of the present invention.
Fig. 4 c is the pattern polarizing electrode schematic diagram of making take electric conductivity electronics bundle resist as matrix material of the present invention.
Fig. 4 d is the pattern polarizing electrode schematic diagram of making take electric conductivity electronics bundle resist as matrix material of the present invention.
Fig. 4 e is the pattern polarizing electrode schematic diagram of making take electric conductivity electronics bundle resist as matrix material of the present invention.
Fig. 4 f is the pattern polarizing electrode schematic diagram of making take electric conductivity electronics bundle resist as matrix material of the present invention.
Fig. 5 a is the pattern polarizing electrode schematic diagram of making take ITO as matrix material of the present invention.
Fig. 5 b is the pattern polarizing electrode schematic diagram of making take ITO as matrix material of the present invention.
Fig. 5 c is the pattern polarizing electrode schematic diagram of making take ITO as matrix material of the present invention.
Fig. 5 d is the pattern polarizing electrode schematic diagram of making take ITO as matrix material of the present invention.
Fig. 5 e is the pattern polarizing electrode schematic diagram of making take ITO as matrix material of the present invention.
Fig. 5 f is the pattern polarizing electrode schematic diagram of making take ITO as matrix material of the present invention.
Fig. 5 g is the pattern polarizing electrode schematic diagram of making take ITO as matrix material of the present invention.
Wherein, 1. formation system, 11. backboards, 12. support, 13. pattern polarizing electrodes, 131. nanostructureds are induced projection, 14. quartz glass substrate, 15. adhere to key-course, 16. ITO conducting films, 17. electric conductivity electronics bundle resist, 18. deposition anti-adhesion layers, 19. electron sensitive resists, 2. moulding material, 3. substrate, 4. DC electric field, 5. microwave curing system.
The specific embodiment
Pattern polarizing electrode disclosed by the invention is induced with microwave curing and is made nanostructured device schematic diagram such as Fig. 1 a, shown in Fig. 1 b.It is comprised of five parts: formation system 1, moulding material 2, substrate 3, DC electric field 4, microwave curing system 5.Wherein formation system 1 is comprised of backboard 11, support 12, pattern polarizing electrode 13.Backboard 11 plays and supports and connection function, by backboard 11 will support 12 and pattern polarizing electrode 13 be assembled into a complete formation system, the effect of support 12 is the gaps that make pattern polarizing electrode 13 and substrate 3 keep uniformities, and support 12 induces the difference in height of protruding 131 (pattern images that need transfer) to determine the height of made nanostructured with the nanostructured that pattern polarizing electrode ledge consists of.Therefore, support 12 height by regulating, can obtain the nanostructured of differing heights value.Its height value is between 100nm-600nm.Pattern polarizing electrode 13 comprises the nanostructured plane characteristic that will make, and namely pattern polarizing electrode 13 ledges are that nanostructured is induced projection 131.
The demoulding for the ease of after solidifying reduces the adhesion of electrode and moulding material, need to carry out finishing to reduce its surface energy to pattern polarizing electrode 13, adopts deposition anti-adhesion layers technique (coating release agent), can select CF
3(CF
2)
5(CH
2)
2SiCL
3, CF
3CH
2CH
2SiCL
3Or the material such as polytetrafluoroethylene (PTFE) is as releasing agent.Moulding material is that viscosity is lower than 0.8Pa.s/25 ℃ and dielectric constant is higher than 5 number liquid thermosetting epoxide resin materials.Take P type silicon chip as substrate 3, adopt silane (Silane) to form carrying out molecular self-assembling at the bottom of the silicon wafer-based.DC electric field 4 adopts the 20V-60V DC voltage, and its anode links to each other with pattern polarizing electrode 13, and cathode substrate 3 links to each other.Operating frequency 2.45 GHz of microwave curing system 5, power output 100W-1000W, the power stage mode is continous way or pulsed.
The present invention is based on following principle: places the dielectric fluid between two conductive parallel plates, under the effect of extra electric field, has the electrohydrodynamic unstable characteristic, and the ability of self assembly generating period nano-pillar structure.The liquid thermosetting epoxide resin material of low viscosity and high-k evenly is coated with is layered in the substrate 3, its top is pattern polarizing electrode 13, apply a voltage between substrate 3 and pattern polarizing electrode 13, its anode links to each other with pattern polarizing electrode 13, and negative electrode links to each other with substrate 3.Moulding material 2 surface films " are upwards drawn high " under the effect of extra electric field generation electrostatic force, it is wavy to cause film slowly to present, and the variation along with the time, the film of trough can be pushed toward crest always, it is more and more higher to present corrugated film, the most advanced and sophisticated top of final crest is to pattern polarizing electrode 13, until film is properly fit onto till the patrix of pattern polarizing electrode 13.Wherein electrostatic force " is upwards drawn high " forming material film, cause the unstable of forming material film interface, and surface tension, molcohesion, atmospheric pressure and forming material film self gravitation play the effect of stable formation material interface, and surface tension is the Main Function power of thin film stability.Feature, moulding material initial film thickness, electrode and basal spacing, spacing Film Thickness Ratio by change voltage, pattern polarizing electrode are ratio, the moulding material dielectric constant of electrode and basal spacing and moulding material initial film thickness, can produce the nanostructured of different characteristic.
The present invention is based on the pattern polarizing electrode induces and makes nanostructured with microwave curing and take following technical solution: at first moulding material 2 evenly is spin-coated in the substrate 3; Then form the location of system 1 and substrate 3, formation system 1 with press down after substrate 3 is aimed at, until the support 12 of formation system 1 contacts fully with substrate 3, and assurance backboard 11 and substrate 3 is parallel; Open subsequently the nanostructured inducible system, based on the self assembly characteristic of forming material film under pattern polarizing electrode 13 and DC electric field 4 are induced, realize that the electrode features figure is to the figure transfer of moulding material; After shaped structure is stable, adopt microwave curing system 5 solidified forming materials 2; At last, formation system 2 separates with nanostructured and the substrate 3 of preparation, produces nanostructured at moulding material 2.
Induce the technology path of making nanostructured at the thermosetting epoxy resin material with microwave curing referring to Fig. 2 based on the pattern polarizing electrode, its basic working procedure step is as follows:
Formation system 1 is made;
Substrate 3 preliminary treatment;
Be coated with and be paved into shape material 2;
Formation system 1 location;
Induce the generation nanostructured;
The nanostructured microwave curing;
The demoulding.
Induce and microwave curing is made nanostructured process schematic diagram (seeing Fig. 3 a-Fig. 3 e) in conjunction with the pattern polarizing electrode, below the concrete technology step in the manufacturing process be described in detail:
1) formation system is made
Formation system 1 comprises backboard 11, support 12, pattern polarizing electrode 13.By backboard 11 will support 12 and pattern polarizing electrode 13 be assembled into a complete formation system.Backboard and support be conventional fine process making take quartzy (quartz) as matrix adopting.Support 12 and need to do anti-stiction treatment.Pattern polarizing electrode 13 adopts electron-beam direct writing and etching technics take electric conductivity electronics bundle resist or ITO as matrix material.The concrete preparation method of pattern polarizing electrode is as follows.
Fig. 4 a-Fig. 4 f be the present invention take electric conductivity electronics bundle resist as matrix material, adopt electron-beam direct writing technique to make the principle schematic of pattern polarizing electrode.Fig. 4 a adheres to key-course 15 for being coated with at quartz glass substrate 14 to spread.Fig. 4 b spreads ITO conducting film 16 for being coated with on adhesion key-course 15.Fig. 4 c spreads electric conductivity electronics bundle resist 17 for rotation on ITO conducting film 16 is coated with.Obtain the nanostructured figure behind Fig. 4 d electron-beam direct writing, exposure, development, the post bake.Fig. 4 e deposition anti-adhesion layers (coating release agent) 18 can be selected CF
3(CF
2)
5(CH
2)
2SiCL
3, CF
3CH
2CH
2SiCL
3Or the material such as polytetrafluoroethylene (PTFE) is as releasing agent.The pattern polarizing electrode that Fig. 4 f completes is separated with quartz glass substrate.
Fig. 5 a-Fig. 5 g be the present invention take ITO as matrix material, adopt electron-beam direct writing and dry etch process to make the principle schematic of pattern polarizing electrode.Fig. 5 a adheres to key-course material 15 for being coated with at quartz glass substrate 14 to spread.Fig. 5 b spreads ITO material 16 for being coated with on the adhesion key-course.Fig. 5 c is coated with the shop electron sensitive resist for rotation on ITO material 16
19Obtain the nanostructured figure at resist behind Fig. 5 d electron-beam direct writing, exposure, development, the post bake.Fig. 5 e is with electron sensitive resist
19For adopting reactive ion etching process, mask transfers on the ITO material 16 obtaining the nanostructured figure on the resist.Fig. 5 f deposition anti-adhesion layers (coating release agent) 18 can be selected CF
3(CF2)
5(CH
2)
2SiCL
3, CF
3CH
2CH
2SiCL
3, the material such as polytetrafluoroethylene (PTFE) is as releasing agent.The pattern polarizing electrode that Fig. 5 g completes is separated with quartz glass substrate 14.
Adopt bonding technology, will support take backboard 11 as the basis 12 and pattern polarizing electrode 13 be fixed on the backboard 11, be assembled into a complete formation system 1.
2) substrate 3 preliminary treatment
As substrate, carry out molecular self-assembling (SAM, Self-assembled Monolayer) surface treatment at the bottom of adopting Silane to silicon wafer-based with the silicon chip of P type silicon chip, make its surface have hydrophobic property, reduce the surface hydrophilic absorption property.(avoid moulding material to stick in the substrate, recurring structure damages in the process of taking off)
3) be coated with and be paved into the shape material
Adopt rotation to be coated with to spread technique that low viscosity and high-k liquid thermosetting epoxide resin material evenly are coated with and spread in the substrate 3, be coated with spread thickness 100nm-300nm(specifically be coated with spread thickness and determine according to the micro-nano structure graphic feature of made).
4) formation system 1 location
Formation system 1 with press down after substrate 3 is aimed at, the support 12 of formation system 1 is contacted fully with substrate 3, and guarantees the parallel of backboard 11 and substrate 3.
5) induce the generation nanostructured
Take pattern polarizing electrode 13 as anode, substrate 3 is negative electrode, applies the 20V-60V DC voltage, consists of the nanostructured inducible system.After inducible system adds voltage, set up a DC electric field 4 in pattern polarizing electrode 13 and 3 of substrates, based on the self assembly characteristic of forming material film under pattern polarizing electrode 13 and DC electric field are induced, realize that the electrode features figure is to the figure transfer of moulding material.
Should guarantee that in whole technical process electrode is parallel with substrate, the gap of electrode and substrate keeps uniformity.The height in gap can be regulated by the support of formation system.
Embodiment adopts 45 V DC voltages, electrode and basal spacing 300nm, and film thickness monitoring is at 100 nm-200 nm.
6) nanostructured microwave curing
The curing mode of epoxy resin is a lot: traditional heat cure has that solidification rate is slow, the cycle is long, material internal exists thermograde, solidify and be difficult to all even completely problems.Compare with traditional heat cure, microwave is because of " molecule in " homogeneous heating mode of uniqueness, advantages such as having efficiency of heating surface height, conduct heat evenly, curing rate is fast, solidfied material homogeneous, heat utilization rate height and process control are easy; In addition, in epoxy resin, add the filler of different performance, improve the microwave absorbing property of epoxy resin by the dielectric properties that change system, can further improve the efficiency of heating surface of microwave.Experimental result shows simultaneously, and under equal conditions the gel time of heating using microwave and specific heat curing hardening time are faster, and shortens along with the increase of microwave power; The structure of microwave curing thing and thermosetting compound is basic identical, hot property is suitable, and mechanical property is a little more than the thermosetting compound.
The liquid thermosetting epoxy resin molding material that the present invention uses should have low viscosity, high-k and good microwave curing performance.The present embodiment moulding material adopts the E51/DDM(diaminodiphenyl-methane) system, epoxy resin is the E51(bisphenol A-type), curing agent is DDM.Also can the better novel liquid epoxy curing agent ZD-1090(viscosity of selectivity little, the operating period long, the temperature tolerance is large).Also there are many low viscosity epoxy resin products directly to use in the market, such as WHUT-RL series, JY-257 etc.In addition, with the bisphenol A type epoxy resin ratio, adopt the co-mixing system of liquid bisphenol F type epoxy resin, Bisphenol F type and bisphenol A-type to have better performance (viscosity is low).In addition, in order to improve the microwave absorbing property of epoxy curing systems, can in epoxy curing systems, add a kind of medium of strong suction ripple, such as pottery, metal dust (aluminium powder, copper powder etc.), carbonyl iron, SiO
2Or nano material etc. changes the electrical impedance of system, thereby strengthens the heating using microwave ability of curing system, improves the microwave curing performance of moulding material.
Use LC3600 epoxy resin among the first embodiment, solidification temperature is at 90 ℃, and be 75s its abundant hardening time, coating thickness 100 nm, electrode and basal spacing 250nm.
Second embodiment: use Epikate 235 liquid bisphenol F type epoxy resin, solidification temperature is at 110 ℃, and be 65s its abundant hardening time, coating thickness 120 nm, electrode and basal spacing 300nm.
In order to reduce hardening time and to obtain good curing performance, also can adopt the variable frequency microwave curing process.
7) demoulding
After the nanostructured that generates is solidified fully, close nanostructured inducible system and microwave curing system, formation system separates with nanostructured and the substrate of preparation.
Claims (6)
1. a pattern polarizing electrode is induced the device of making nanostructured with microwave curing, comprising: formation system; Moulding material; Substrate; The nanostructured inducible system; The microwave curing system is characterized in that, described formation system is comprised of backboard, support, pattern polarizing electrode; Moulding material is that viscosity is lower than 0.8Pa.s/25 ℃ and dielectric constant is higher than 5 liquid thermosetting epoxide resin material; Substrate is P type silicon chip; The anode of nanostructured inducible system take the pattern polarizing electrode as DC electric field, substrate are the negative electrode of DC electric field, and the pattern polarizing electrode is positioned at the top of substrate.
2. pattern polarizing electrode as claimed in claim 1 is induced the device of making nanostructured with microwave curing, it is characterized in that the voltage of described DC electric field is 20V-60V.
3. pattern polarizing electrode as claimed in claim 1 is induced the device of making nanostructured with microwave curing, it is characterized in that, operating frequency 2. 45 GHz of described microwave curing system, power output 100W-1000W, the power stage mode is continous way or pulsed, hardening time 20-100s, solidification temperature 60-130 ℃.
4. one kind is adopted pattern polarizing electrode claimed in claim 1 to induce the preparation method of making the nanostructured device with microwave curing, it is characterized in that, comprises the steps:
1) makes formation system
Take electric conductivity electronics bundle resist or tin indium oxide ITO as matrix material, adopt electron-beam direct writing and etching technics to make the pattern polarizing electrode, after the pattern polarizing electrode completes, apply one deck releasing agent at the work outer surface, by backboard will support and the pattern polarizing electrode fit together, the size of pattern polarizing electrode and substrate gap is adjusted by the support of changing differing heights, and its gap is between 100nm-600nm;
2) substrate pretreatment
Take P type silicon chip as substrate, carry out the molecular self-assembling surface treatment at the bottom of adopting Silane to silicon wafer-based, make its surface have hydrophobic property, reduce the surface hydrophilic absorption property;
3) be coated with and be paved into the shape material
Adopt rotation to be coated with to spread technique that viscosity is lower than 0.8Pa.s/25 ℃ and dielectric constant and be higher than 5 liquid thermosetting epoxide resin materials and evenly be coated with and spread in the substrate, be coated with and spread thickness 100 nm-300nm;
4) formation system location
Formation system with press down after substrate is aimed at, the support of formation system is contacted fully with substrate, and guarantees the parallel of mould and substrate;
5) induce the generation nanostructured
Take the pattern polarizing electrode as anode, substrate is negative electrode, apply the 20V-60V DC voltage, consist of the nanostructured inducible system, after inducible system adds voltage, between pattern polarizing electrode and substrate, set up an electric field, moulding material produces electrostatic force under electric field action, electrostatic force overcomes surface tension, molcohesion, atmospheric pressure and forming material film self gravitation, partially-formed material is upwards attracted, form nano-pillar, nano-pillar is constantly grown under the effect of electric field force, until contact with the pattern polarizing electrode, when electrostatic force and surface tension, molcohesion, atmospheric pressure and forming material film self gravitation electrostatic force reach poised state, copy pattern polarizing electrode nanofeature structure at moulding material, realize that the electrode features figure is to the transfer of moulding material feature structure;
6) nanostructured microwave curing
Operating frequency 2. 45 GHz of microwave curing system, power output 100W-1000W, the power stage mode is continous way or pulsed; Hardening time, 20-100s, generated required nanostructured by solidification temperature 60-130 ℃ after the microwave curing system fully solidifies;
7) demoulding
Close nanostructured inducible system and microwave curing system, nanostructured and the substrate of formation system and preparation are separated.
5. pattern polarizing electrode as claimed in claim 4 is induced the preparation method of making the nanostructured device with microwave curing, it is characterized in that, in the described step 3), moulding material adds pottery, metallic aluminium powder, copper powders may, carbonyl iron or SiO
2Nano material is to change the electrical impedance of moulding material.
6. the pattern polarizing electrode is induced the preparation method of making the nanostructured device with microwave curing as claimed in claim 4, it is characterized in that in the described step 4), mould is parallel with substrate, the gap uniformity of mould and substrate.
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| CN103420333A (en) * | 2012-05-15 | 2013-12-04 | 中国科学院微电子研究所 | Method and apparatus for drying nanometer pattern by using microwave |
| CN105538680B (en) * | 2015-12-28 | 2018-07-06 | 哈尔滨工业大学 | A kind of ultrasonic wave added electrostatic induction polymer surfaces micro-structured form method and device |
| CN106356471B (en) * | 2016-10-17 | 2017-12-08 | 东莞理工学院 | A kind of curing of OLED negative electrode |
| EP3603937B1 (en) * | 2017-03-27 | 2023-09-27 | Daicel Corporation | Resin molded article production method and optical component production method |
| CN107058984A (en) * | 2017-03-29 | 2017-08-18 | 华南理工大学 | A kind of graphical quantum dot film preparation method based on electrostatic induction |
| CN109130184B (en) * | 2018-08-14 | 2020-11-03 | 吉林大学 | Method for preparing nanoscale electric jet spray needle by using structure induction method |
| CN110293043B (en) * | 2019-06-10 | 2021-01-01 | 武汉大学 | Method for controlling patterned deposition of particles in liquid phase |
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| CN1649094A (en) * | 2004-12-28 | 2005-08-03 | 东南大学 | External electric field induced orientation sedimentation method for preparing nano gap |
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