TW202235289A - Transfer roller and manufacturing method thereof - Google Patents

Transfer roller and manufacturing method thereof Download PDF

Info

Publication number
TW202235289A
TW202235289A TW110108423A TW110108423A TW202235289A TW 202235289 A TW202235289 A TW 202235289A TW 110108423 A TW110108423 A TW 110108423A TW 110108423 A TW110108423 A TW 110108423A TW 202235289 A TW202235289 A TW 202235289A
Authority
TW
Taiwan
Prior art keywords
roller
transfer roller
manufacturing
photoresist layer
etching
Prior art date
Application number
TW110108423A
Other languages
Chinese (zh)
Other versions
TWI752844B (en
Inventor
林劉恭
Original Assignee
光群雷射科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 光群雷射科技股份有限公司 filed Critical 光群雷射科技股份有限公司
Priority to TW110108423A priority Critical patent/TWI752844B/en
Application granted granted Critical
Publication of TWI752844B publication Critical patent/TWI752844B/en
Publication of TW202235289A publication Critical patent/TW202235289A/en

Links

Images

Abstract

A transfer roller and manufacturing method thereof are provided. The manufacturing method of the transfer roller includes a roller providing step, a substrate providing step, a pressing substrate step, a separating step, and a roller forming step. In the roller providing step, a metal roller with a photoresist layer on an outer surface thereof is provided, and the photoresist layer is formed with a plurality of exposure patterns. In the substrate providing step, a substrate with a layer of protective paste is provided. In the pressing substrate step, each exposure pattern is pressure-dipped in the protective paste, and the ratio of the volume height of each exposure pattern immersed in the protective paste to that of the non-immersed in the protective paste is between 0.5~0.76. In the separating step, the metal roller is separated from the protective paste. In the roller forming step, the photoresist layer and the outer surface are etched, and then the photoresist layer is removed to form the transfer roller.

Description

轉印滾輪及其製造方法Transfer roller and manufacturing method thereof

本發明涉及一種滾輪及其製造方法，特別是涉及一種轉印滾輪及其製造方法。The invention relates to a roller and a manufacturing method thereof, in particular to a transfer roller and a manufacturing method thereof.

現有的光學膜片經常透過壓印的方法，以轉印滾輪在光學膜片上轉印光學微結構，進而形成所需的光學膜片。因此在轉印光學微結構前，現有的轉印滾輪需要經由特殊的製程，在一金屬滾輪表面形成轉印用微結構（例如：使用電鑄方法製作轉印母模，再以轉印母模形成表面具有微結構的金屬滾輪），進而形成所需的轉印滾輪。然而，上述特殊製程的技術困難度較高，並且轉印滾輪製造時經常需要耗費大量的經費與時間。Existing optical films often use a transfer roller to transfer optical microstructures on the optical film by means of embossing to form the desired optical film. Therefore, before transferring the optical microstructure, the existing transfer roller needs to go through a special process to form a microstructure for transfer on the surface of a metal roller (for example: use the electroforming method to make the transfer master mold, and then use the transfer master mold form a metal roller with a microstructure on the surface), and then form the desired transfer roller. However, the above-mentioned special manufacturing process is technically difficult, and the manufacture of the transfer roller often requires a lot of money and time.

此外，現有的金屬滾輪在其表面形成轉印用微結構時，可能因為表面不平整，導致轉印用微結構產生誤差。故，如何通過結構設計的改良，來克服上述的缺陷，已成為該項事業所欲解決的重要課題之一。In addition, when the microstructure for transfer is formed on the surface of the existing metal roller, errors may occur in the microstructure for transfer due to unevenness of the surface. Therefore, how to overcome the above-mentioned defects by improving the structural design has become one of the important issues to be solved by this project.

本發明實施例針對現有技術的不足提供一種轉印滾輪及其製造方法，其能有效地改善現有轉印滾輪所可能產生的缺陷。Embodiments of the present invention provide a transfer roller and a manufacturing method thereof, which can effectively improve possible defects of the existing transfer roller.

本發明實施例公開一種轉印滾輪製造方法，其包括：一滾輪提供步驟：提供一金屬滾輪，其外表面設置有一光阻層，並且所述光阻層相對遠離所述外表面的一側形成有多個曝光圖案；一基板提供步驟：提供一基板，其任意一側設置有一層保護膏，並且所述保護膏包含有一奈米金屬以及一溶劑；一壓板步驟：將每個所述曝光圖案的部分體積壓浸於所述保護膏中，使所述奈米金屬黏附於每個所述曝光圖案；其中，每個所述曝光圖案浸於所述保護膏中的體積高度與每個所述曝光圖案未浸於所述保護膏中的體積高度比值介於0.5～0.76；一分離步驟：將所述金屬滾輪與所述保護膏分離，使黏附於每個所述曝光圖案的所述奈米金屬形成一保護層；以及一滾輪形成步驟：蝕刻所述光阻層與所述外表面，而後去除所述光阻層以形成一轉印滾輪。The embodiment of the present invention discloses a method for manufacturing a transfer roller, which includes: a roller providing step: providing a metal roller, the outer surface of which is provided with a photoresist layer, and the photoresist layer is formed on the side farther away from the outer surface There are multiple exposure patterns; a substrate providing step: providing a substrate with a layer of protective paste on any side thereof, and the protective paste contains a nanometer metal and a solvent; a pressing step: each of the exposure patterns A part of the volume of the exposure pattern is soaked in the protective paste, so that the nano metal adheres to each of the exposure patterns; wherein, the volume height of each exposure pattern immersed in the protection paste is the same as that of each of the exposure patterns The ratio of the volume height of the exposed pattern not immersed in the protective paste is between 0.5 and 0.76; a separation step: separating the metal roller from the protective paste, so that the nanometer sticking to each of the exposed patterns metal forming a protective layer; and a roller forming step: etching the photoresist layer and the outer surface, and then removing the photoresist layer to form a transfer roller.

本發明實施例公開一種轉印滾輪，其是以上述轉印滾輪製造方法所製成。The embodiment of the present invention discloses a transfer roller, which is manufactured by the above-mentioned manufacturing method of the transfer roller.

本發明的其中一有益效果在於，本發明所提供的所述轉印滾輪及其製造方法，其能通過“所述壓板步驟：將每個所述曝光圖案的部分體積壓浸於所述保護膏中，使所述奈米金屬黏附於每個所述曝光圖案；其中，每個所述曝光圖案浸於所述保護膏中的體積高度與每個所述曝光圖案未浸於所述保護膏中的體積高度比值介於0.5～0.76”的技術方案，降低所述轉印滾輪的製造困難度，並能有效避免所述金屬滾輪的所述外表面的不平整情形，進而減低所述轉印滾輪被蝕刻時產生的尺寸誤差。One of the beneficial effects of the present invention is that the transfer roller provided by the present invention and its manufacturing method can pass through the "pressing step: pressing and impregnating part of the volume of each exposure pattern in the protective paste." , making the nano metal adhere to each of the exposure patterns; wherein, the volume height of each of the exposure patterns immersed in the protective paste is the same as that of each of the exposure patterns not immersed in the protective paste The volume-to-height ratio is between 0.5-0.76", which reduces the manufacturing difficulty of the transfer roller, and can effectively avoid the unevenness of the outer surface of the metal roller, thereby reducing the cost of the transfer roller. Dimensional errors that occur when etched.

為使能更進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本發明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings related to the present invention. However, the provided drawings are only for reference and description, and are not intended to limit the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關“轉印滾輪製造方法”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不背離本發明的構思下進行各種修改與變更。另外，本發明的附圖僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。此外，以下如有指出請參閱特定圖式或是如特定圖式所示，其僅是用以強調於後續說明中，所述及的相關內容大部份出現於該特定圖式中，但不限制該後續說明中僅可參考所述特定圖式。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的保護範圍。The implementation of the "transfer roller manufacturing method" disclosed in the present invention is described below through specific specific examples. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple illustration, and are not drawn according to the actual size, which is stated in advance. In addition, if it is pointed out below that please refer to the specific drawing or as shown in the specific drawing, it is only used to emphasize the follow-up description. Most of the relevant content mentioned appears in the specific drawing, but not In this ensuing description, reference may be made to only the specific drawings described. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention.

應當可以理解的是，雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號，但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件，或者一信號與另一信號。另外，本文中所使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。It should be understood that although terms such as "first", "second", and "third" may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one element from another element, or one signal from another signal. In addition, the term "or" used herein may include any one or a combination of more of the associated listed items depending on the actual situation.

請參閱圖1至圖8所示，其為本發明的實施例，需先說明的是，本實施例所對應到的附圖及其所提及的相關數量與外形，僅用來具體地說明本發明的實施方式，以便於了解本發明的內容，而非用來侷限本發明的保護範圍。Please refer to Figures 1 to 8, which are embodiments of the present invention. It should be noted that the drawings corresponding to this embodiment and the relevant quantities and shapes mentioned are only used for specific description. The embodiments of the present invention are used to facilitate the understanding of the content of the present invention, and are not used to limit the protection scope of the present invention.

如圖1至圖8所示，本發明實施例提供一種轉印滾輪製造方法S100，其依序包括一滾輪提供步驟S1、一基板提供步驟S3、一壓板步驟S5、一分離步驟S7、一固化步驟S8、以及一滾輪形成步驟S9，但本發明並不限於此。舉例來說，於本發明未繪示的其他實施例中，所述轉印滾輪製造方法S100也可以不包括所述固化步驟S8。As shown in Figures 1 to 8, an embodiment of the present invention provides a method for manufacturing a transfer roller S100, which sequentially includes a roller providing step S1, a substrate providing step S3, a platen pressing step S5, a separating step S7, and a curing step. Step S8, and a roller form step S9, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the manufacturing method S100 of the transfer roller may also not include the curing step S8.

如圖1及圖3所示，於所述滾輪提供步驟S1中，一金屬滾輪1被提供，其外表面11設置有一光阻層2，並且所述光阻層2相對遠離所述外表面11的一側形成有多個曝光圖案21。其中，任一個所述曝光圖案21的深度小於所述光阻層2的厚度，並且任一個所述曝光圖案21的所述深度介於0.15微米～0.45微米之間，但本發明並不限於此。具體來說，上述深度能依據實際需求而調整其尺寸，但仍不能大於所述光阻層2的厚度。As shown in Figures 1 and 3, in the roller providing step S1, a metal roller 1 is provided, its outer surface 11 is provided with a photoresist layer 2, and the photoresist layer 2 is relatively far away from the outer surface 11 A plurality of exposure patterns 21 are formed on one side. Wherein, the depth of any one of the exposure patterns 21 is smaller than the thickness of the photoresist layer 2, and the depth of any one of the exposure patterns 21 is between 0.15 microns and 0.45 microns, but the present invention is not limited thereto . Specifically, the above-mentioned depth can be adjusted according to actual needs, but still cannot be greater than the thickness of the photoresist layer 2 .

需要說明的是，所述轉印滾輪製造方法S100能通過“任一個所述曝光圖案21的深度小於所述光阻層2的厚度”的技術手段，使得所述光阻層2能夠具備較大的厚度（例如3微米至25微米），而能夠提高所述光阻層2的均勻性。It should be noted that, the transfer roller manufacturing method S100 can make the photoresist layer 2 have a larger The thickness (for example, 3 micrometers to 25 micrometers) can improve the uniformity of the photoresist layer 2 .

需要說明的是，多個所述曝光圖案21於本實施例中形成有一正弦波形表面，並且所述正弦波形表面的任兩個波峰之間相隔有介於0.9～1.1微米的一間隔，而任一個波鋒與波谷之間的距離等於上述深度。It should be noted that, in this embodiment, the plurality of exposure patterns 21 form a sinusoidal wave surface, and there is an interval of 0.9-1.1 microns between any two peaks of the sinusoidal wave surface, and any The distance between a crest and a trough is equal to the aforementioned depth.

需要說明的是，於本實施例中，所述金屬滾輪1較佳由鋁金屬製成，但本發明並不限於此。舉例來說，所述金屬滾輪1也可以由錫、鉛、鋅、不銹鋼、銅、黃銅、鐵、鎳、鈷、鎢、鉻或其硬度大於鋁的金屬製成。此外，所述光阻層2由正光阻劑形成，其主要是由酚醛樹脂（Phenol-formaldehyde resin）製成，但本發明並不限於此。舉例來說，所述光阻層2也可以由環氧樹脂（Epoxy resin）等正光阻劑材料製成。It should be noted that, in this embodiment, the metal roller 1 is preferably made of aluminum, but the present invention is not limited thereto. For example, the metal roller 1 can also be made of tin, lead, zinc, stainless steel, copper, brass, iron, nickel, cobalt, tungsten, chromium or a metal whose hardness is greater than aluminum. In addition, the photoresist layer 2 is formed of a positive photoresist, which is mainly made of phenol-formaldehyde resin, but the present invention is not limited thereto. For example, the photoresist layer 2 may also be made of a positive photoresist material such as epoxy resin (Epoxy resin).

需要說明的是，為方便說明與理解，本實施例於圖3至圖8中僅繪製有部分所述金屬滾輪1以及設置於所述外表面11的所述光阻層2以方便論述。It should be noted that, for the convenience of illustration and understanding, only part of the metal roller 1 and the photoresist layer 2 disposed on the outer surface 11 are drawn in FIG. 3 to FIG. 8 in this embodiment for convenience of discussion.

如圖1及圖3所示，於所述基板提供步驟S3中，一基板3被提供，其任意一側設置有一層保護膏4，並且所述保護膏4包含有一奈米金屬以及一溶劑。其中，所述奈米金屬的粒徑大小介於50奈米～130奈米之間，所述保護膏4具有一保護膏厚度4T，其介於0.09微米～0.13微米之間，並且所述基板3主要由聚對苯二甲酸乙二酯（Polyethylene terephthalate, PET）製成，但本發明並不限於此。舉例來說，於本發明的其他實施例中，所述基板3也可以是由具有透明特性的任一樹脂製成。As shown in FIG. 1 and FIG. 3 , in the substrate providing step S3 , a substrate 3 is provided with a layer of protective paste 4 disposed on any side thereof, and the protective paste 4 includes a nanometer metal and a solvent. Wherein, the particle size of the nano metal is between 50 nanometers and 130 nanometers, the protective paste 4 has a protective paste thickness 4T, which is between 0.09 microns and 0.13 microns, and the substrate 3 is mainly made of polyethylene terephthalate (PET), but the present invention is not limited thereto. For example, in other embodiments of the present invention, the substrate 3 may also be made of any resin with transparent properties.

需要說明的是，於本實施例中，所述保護膏4是透過噴墨法將所述奈米金屬以及所述溶劑噴塗於所述基板3，並層層堆疊而形成一層所述保護膏4。其中，所述保護膏4具有黏性，並且所述奈米金屬為一奈米銀金屬，而所述溶劑為丙二醇，但本發明並不限於此。簡單來說，所述溶劑只要能用來溶解所述奈米金屬並能使所述保護膏4具有黏性及可，而所述奈米金屬於本發明的其他實施例中也可以為奈米金或其他類型的奈米金屬，並且所述保護膏4能透過其他方法設置於所述基板3上，並無特別限制。It should be noted that, in this embodiment, the protective paste 4 is formed by spraying the nano metal and the solvent on the substrate 3 by inkjet method, and stacking them layer by layer to form a layer of the protective paste 4 . Wherein, the protective paste 4 has viscosity, and the nano-metal is a nano-silver metal, and the solvent is propylene glycol, but the present invention is not limited thereto. In simple terms, as long as the solvent can be used to dissolve the nano metal and make the protective paste 4 viscous, the nano metal can also be a nano metal in other embodiments of the present invention. Gold or other types of nano-metals, and the protection paste 4 can be disposed on the substrate 3 by other methods, and there is no special limitation.

需要說明的是，為方便說明與理解，本實施例於圖3至圖8中僅繪製有部分所述基板3以設置於其任意一側的所述保護膏4以方便論述。It should be noted that, for the convenience of description and understanding, only part of the substrate 3 is drawn in FIG. 3 to FIG. 8 in this embodiment, so as to facilitate discussion.

如圖1所示，於所述壓板步驟S5中，每個所述曝光圖案21的部分體積被壓浸於所述保護膏4中，使所述奈米金屬黏附於每個所述曝光圖案21。其中，每個所述曝光圖案21浸於所述保護膏4中的體積高度與每個所述曝光圖案21未浸於所述保護膏4中的體積高度比值介於0.5～0.76。藉此，每個所述曝光圖案21浸於所述保護膏4時，將不容易因為所述溶劑對所述曝光圖案21的吸附力以及所述溶劑分子間內聚力而產生的表面張力，而使每個所述曝光圖案21完全浸於所述保護膏4。As shown in FIG. 1, in the pressing step S5, part of the volume of each exposure pattern 21 is impregnated into the protective paste 4, so that the nanometer metal adheres to each exposure pattern 21 . Wherein, the ratio of the volume height of each exposure pattern 21 immersed in the protection paste 4 to the volume height of each exposure pattern 21 not immersed in the protection paste 4 is 0.5˜0.76. In this way, when each of the exposure patterns 21 is immersed in the protective paste 4, it will not be easily caused by the surface tension generated by the solvent's adsorption force on the exposure patterns 21 and the cohesion between the solvent molecules. Each exposure pattern 21 is completely immersed in the protection paste 4 .

需要說明的是，所述保護膏4不能以普通銀膏或導電銀膠替代，其原因在於：普通銀膏或導電銀膠的膠含量（一般為環氧樹脂）過多，並且其所使用的金屬粒子也過多。舉例來說，一般的普通銀膏，其銀粉含量約為重量百分比80%，而環氧樹脂為約為重量百分比20%，若本發明於所述基板提供步驟S3中使用一般的普通銀膏，則需要浪費許多金屬銀，並且環氧樹脂將會過多地黏附於每個所述曝光圖案21（對每個所述曝光圖案21而言，環氧樹脂為過多的阻質），導致後續的製程良率降低。It should be noted that the protective paste 4 cannot be replaced by ordinary silver paste or conductive silver glue. There are also too many particles. For example, general common silver paste, its silver powder content is about 80% by weight, and epoxy resin is about 20% by weight, if the present invention uses common common silver paste in described substrate providing step S3, Then a lot of metallic silver needs to be wasted, and the epoxy resin will adhere too much to each of the exposure patterns 21 (for each of the exposure patterns 21, the epoxy resin is too much resist), resulting in subsequent process Yield decreases.

如圖4所示，於所述分離步驟S7中，所述金屬滾輪1與所述保護膏4分離，使黏附於每個所述曝光圖案21的所述奈米金屬形成一保護層41。具體來說，當所述金屬滾輪1與所述保護膏4分離後，所述奈米金屬與所述溶劑將黏附於每個所述曝光圖案21上，並且經一段時間後，所述溶劑將隨水分蒸發而減少，進而使所述奈米金屬與所述溶劑形成所述保護層41。As shown in FIG. 4 , in the separation step S7 , the metal roller 1 is separated from the protection paste 4 , so that the nano metal adhered to each of the exposure patterns 21 forms a protection layer 41 . Specifically, when the metal roller 1 is separated from the protective paste 4, the nano-metal and the solvent will adhere to each of the exposure patterns 21, and after a period of time, the solvent will As the water evaporates, the amount decreases, so that the nano metal and the solvent form the protective layer 41 .

如圖1所示，於所述固化步驟S8中，所述保護層41被一固化裝置（圖未繪）固化，並且所述固化步驟S8於所述分離步驟S7與所述滾輪形成步驟S9之間進行。其中，所述固化裝置為一氙氣燈，其波長介於300奈米～1100奈米之間。具體來說，當所述固化裝置照射所述保護層41時，所述保護層41中的所述溶劑將吸收所述固化裝置的照射波長的能量，進而在常溫下快速被固化，進而使所述奈米金屬與所述溶劑形成所述保護層41。As shown in Figure 1, in the curing step S8, the protective layer 41 is cured by a curing device (not shown), and the curing step S8 is between the separating step S7 and the roller forming step S9 in between. Wherein, the curing device is a xenon lamp whose wavelength is between 300 nm and 1100 nm. Specifically, when the curing device irradiates the protective layer 41, the solvent in the protective layer 41 will absorb the energy of the irradiation wavelength of the curing device, and then be cured rapidly at room temperature, thereby making the The nano metal and the solvent form the protective layer 41 .

如圖2、圖5至圖8所示，於所述滾輪形成步驟S9中，所述光阻層2與所述外表面11被蝕刻，而後所述光阻層2被去除以形成一轉印滾輪1a。更詳細地說，如圖2所示，所述滾輪形成步驟S9依序包含有一光阻蝕刻手段S91、一滾輪蝕刻手段S92、及一圖案去除手段S93。As shown in FIG. 2, FIG. 5 to FIG. 8, in the roller forming step S9, the photoresist layer 2 and the outer surface 11 are etched, and then the photoresist layer 2 is removed to form a transfer Roller 1a. More specifically, as shown in FIG. 2 , the roller formation step S9 includes a photoresist etching means S91 , a roller etching means S92 , and a pattern removal means S93 in sequence.

如圖2、圖5、及圖6所示，於所述光阻蝕刻手段S91中，所述光阻層2被一蝕刻裝置5以非等向性蝕刻方式進行蝕刻，使未形成有所述保護層41的多個所述曝光圖案21被移除，進而形成一圖案化光阻層22。其中，所述光阻蝕刻手段S91是採用電漿蝕刻方式進行，但本發明並不限於此。舉例來說，於本發明的其他實施例中，其他非等向蝕刻手段均能夠被應用於實施所述光阻蝕刻手段S91。As shown in Fig. 2, Fig. 5, and Fig. 6, in the photoresist etching means S91, the photoresist layer 2 is etched by an etching device 5 in an anisotropic etching manner, so that the photoresist layer 2 is not formed. A plurality of the exposure patterns 21 of the passivation layer 41 are removed to form a patterned photoresist layer 22 . Wherein, the photoresist etching means S91 is performed by plasma etching, but the present invention is not limited thereto. For example, in other embodiments of the present invention, other anisotropic etching methods can be applied to implement the photoresist etching method S91.

需要說明的是，由於非等向性蝕刻手段具有蝕刻方向可控制的特點，使得所述光阻層2能夠以大致上沿著和所述金屬滾輪1的所述外表面11的法線方向被蝕刻，因此能夠減少了所述圖案化光阻層22產生缺陷的機會。It should be noted that, since the anisotropic etching method has the characteristic of controllable etching direction, the photoresist layer 2 can be substantially along the normal direction of the outer surface 11 of the metal roller 1 Etching, therefore, can reduce the chance of defects in the patterned photoresist layer 22 .

需要說明的是，在所述光阻蝕刻手段S91進行前，使用者能於所述滾輪提供步驟S1中，控制多個所述曝光圖案21的深度和所述光阻層2厚度的比例（例如將多個所述曝光圖案21的深度控制於所述光阻層2厚度的1/3至2/3之間），並搭配非等向性的電漿蝕刻手段使得所述光阻層2被蝕刻後形成所述圖案化光阻層22，其能夠提高所述圖案化光阻層22圖形的正確性，並減少所述圖案化光阻層22的缺陷。It should be noted that before the photoresist etching means S91, the user can control the ratio of the depth of the exposure patterns 21 to the thickness of the photoresist layer 2 in the roller providing step S1 (for example controlling the depth of the plurality of exposure patterns 21 between 1/3 and 2/3 of the thickness of the photoresist layer 2), and using anisotropic plasma etching means to make the photoresist layer 2 be The patterned photoresist layer 22 is formed after etching, which can improve the correctness of the pattern of the patterned photoresist layer 22 and reduce defects of the patterned photoresist layer 22 .

如圖2、圖7、及圖8所示，於所述滾輪蝕刻手段S92中，所述圖案化光阻層22被作為遮罩，並且所述金屬滾輪1的所述外表面11被所述蝕刻裝置5以非等向蝕刻方式進行蝕刻，而於所述外表面11形成多個壓印圖形111。As shown in FIG. 2, FIG. 7, and FIG. 8, in the roller etching means S92, the patterned photoresist layer 22 is used as a mask, and the outer surface 11 of the metal roller 1 is covered by the The etching device 5 performs etching in an anisotropic etching manner, and forms a plurality of embossed patterns 111 on the outer surface 11 .

特別說明，於本實施例中，所述滾輪蝕刻手段S92是使用高密度電漿源（High density plasma, HDP）並以反應式離子蝕刻手段（Reactive Ion Etch, RIE）進行，但本發明並不限於此。舉例來說，所述滾輪蝕刻手段S92也能夠採用磁場強化活性離子蝕刻手段（Magnetic Enhanced RIE, MERIE），或者透過脈衝電場強化的技術手段，增強蝕刻的效率並控制蝕刻的方向。In particular, in this embodiment, the roller etching method S92 is performed using a high density plasma source (High density plasma, HDP) and a reactive ion etching method (Reactive Ion Etch, RIE), but the present invention does not limited to this. For example, the roller etching means S92 can also adopt Magnetic Enhanced RIE (MERIE) or a pulsed electric field strengthening technique to enhance the etching efficiency and control the etching direction.

如圖2及圖8所示，於所述圖案去除手段S93中，所述圖案化光阻層22自所述金屬滾輪1的所述外表面11被移除，進而形成所述轉印滾輪1a。As shown in FIG. 2 and FIG. 8, in the pattern removing means S93, the patterned photoresist layer 22 is removed from the outer surface 11 of the metal roller 1, thereby forming the transfer roller 1a .

[實施例的有益效果][Advantageous Effects of Embodiment]

本發明的其中一有益效果在於，本發明所提供的所述轉印滾輪1a及其製造方法S100，其能通過“所述壓板步驟S5：將每個所述曝光圖案21的部分體積壓浸於所述保護膏4中，使所述奈米金屬黏附於每個所述曝光圖案21。其中，每個所述曝光圖案21浸於所述保護膏4中的體積高度與每個所述曝光圖案21未浸於所述保護膏4中的體積高度比值介於0.5～0.76”的技術方案，降低所述轉印滾輪1a的製造困難度，並能有效避免所述金屬滾輪1的所述外表面11的不平整情形，進而減低所述轉印滾輪1a被蝕刻時產生的尺寸誤差。One of the beneficial effects of the present invention is that the transfer roller 1a and its manufacturing method S100 provided by the present invention can pass through the "pressing step S5: impregnating part of the volume of each exposure pattern 21 in In the protective paste 4, the nanometer metal is adhered to each of the exposure patterns 21. Wherein, the volume height of each of the exposure patterns 21 immersed in the protection paste 4 is the same as that of each of the exposure patterns. 21 The technical proposal that the volume-to-height ratio not dipped in the protective paste 4 is between 0.5 and 0.76", which reduces the manufacturing difficulty of the transfer roller 1a and can effectively prevent the outer surface of the metal roller 1 from 11, thereby reducing the size error generated when the transfer roller 1a is etched.

更進一步來說，所述轉印滾輪製造方法S100能通過“所述光阻蝕刻手段S91：透過非等向性蝕刻方式對所述光阻層2進行蝕刻，使未形成有所述保護層41的多個所述曝光圖案21被移除，進而形成所述圖案化光阻層22＂的技術手段，大幅降低所述轉印滾輪1a的製造時間及製造成本。Furthermore, the transfer roller manufacturing method S100 can use "the photoresist etching means S91: etching the photoresist layer 2 through an anisotropic etching method, so that the protective layer 41 is not formed." The technical means of removing a plurality of the exposure patterns 21 to form the patterned photoresist layer 22 ″ greatly reduces the manufacturing time and cost of the transfer roller 1a.

更進一步來說，所述轉印滾輪製造方法S100能通過“所述固化裝置為一氙氣燈，其波長介於300奈米～1100奈米之間＂的技術手段，使所述保護層41中的所述溶劑，在常溫下能快速被固化。Furthermore, the transfer roller manufacturing method S100 can make the protective layer 41 The solvent can be solidified quickly at normal temperature.

更進一步來說，所述轉印滾輪製造方法S100能通過“所述滾輪蝕刻手段S92：透過非等向蝕刻方式以所述圖案化光阻層22為遮罩蝕刻所述金屬滾輪1的所述外表面11，而於所述外表面11形成多個所述壓印圖形111＂的技術手段，大幅降低所述轉印滾輪1a的製造時間及製造成本。Furthermore, the transfer roller manufacturing method S100 can use "the roller etching means S92: etching the metal roller 1 by using the patterned photoresist layer 22 as a mask through an anisotropic etching method." The outer surface 11, and the technical means of forming a plurality of embossed patterns 111" on the outer surface 11 greatly reduce the manufacturing time and cost of the transfer roller 1a.

更進一步來說，所述轉印滾輪製造方法S100能通過“所述保護膏4包含有所述奈米金屬以及所述溶劑＂的技術手段，大幅降低生產成本。Furthermore, the manufacturing method S100 of the transfer roller can greatly reduce the production cost through the technical means of "the protective paste 4 contains the nano metal and the solvent".

以上所公開的內容僅為本發明的優選可行實施例，並非因此侷限本發明的申請專利範圍，所以凡是運用本發明說明書及圖式內容所做的等效技術變化，均包含於本發明的申請專利範圍內。The content disclosed above is only a preferred feasible embodiment of the present invention, and does not therefore limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

S100:轉印滾輪製造方法 S1:滾輪提供步驟 S3:基板提供步驟 S5:壓板步驟 S7:分離步驟 S8:固化步驟 S9:滾輪形成步驟 S91:光阻蝕刻手段 S92:滾輪蝕刻手段 S93:圖案去除手段 1:金屬滾輪 11:外表面 111:壓印圖形 1a:轉印滾輪 2:光阻層 21:曝光圖案 22:圖案化光阻層 3:基板 4:保護膏 41:保護層 4T:保護膏厚度 5:蝕刻裝置 S100: Manufacturing method of transfer roller S1: Wheel provision steps S3: Substrate provision step S5: Platen step S7: separation step S8: curing step S9: Roller forming step S91: Photoresist etching means S92: Roller Etching Means S93: Pattern removal means 1: metal roller 11: Outer surface 111: Embossed graphics 1a: Transfer roller 2: Photoresist layer 21: Exposure pattern 22: Patterned photoresist layer 3: Substrate 4: Protective cream 41: protective layer 4T: Thickness of protective paste 5: Etching device

圖1為本發明實施例的轉印滾輪製造方法的步驟流程圖。FIG. 1 is a flow chart of steps of a method for manufacturing a transfer roller according to an embodiment of the present invention.

圖2為本發明實施例的滾輪形成步驟的流程圖。Fig. 2 is a flow chart of the steps of forming the roller in the embodiment of the present invention.

圖3為本發明實施例的壓板步驟的動作示意圖。Fig. 3 is a schematic diagram of the action of the step of pressing the plate according to the embodiment of the present invention.

圖4為本發明實施例的分離步驟的動作示意圖。Fig. 4 is a schematic diagram of the action of the separation step of the embodiment of the present invention.

圖5為本發明實施例的光阻蝕刻手段的動作示意圖。FIG. 5 is a schematic diagram of the operation of the photoresist etching means according to the embodiment of the present invention.

圖6為本發明實施例的圖案化光阻層的示意圖。FIG. 6 is a schematic diagram of a patterned photoresist layer according to an embodiment of the present invention.

圖7為本發明實施例的滾輪蝕刻手段的動作示意圖。FIG. 7 is a schematic diagram of the operation of the roller etching means according to the embodiment of the present invention.

圖8為本發明實施例的多個壓印圖形的示意圖。FIG. 8 is a schematic diagram of multiple embossed patterns according to an embodiment of the present invention.

S100:轉印滾輪製造方法 S100: Manufacturing method of transfer roller

S1:滾輪提供步驟 S1: Wheel provision steps

S3:基板提供步驟 S3: Substrate provision step

S5:壓板步驟 S5: Platen step

S7:分離步驟 S7: separation step

S8:固化步驟 S8: curing step

S9:滾輪形成步驟 S9: Roller forming step

Claims (10)

一種轉印滾輪製造方法，其包括： 一滾輪提供步驟：提供一金屬滾輪，其外表面設置有一光阻層，並且所述光阻層相對遠離所述外表面的一側形成有多個曝光圖案； 一基板提供步驟：提供一基板，其任意一側設置有一層保護膏，並且所述保護膏包含有一奈米金屬以及一溶劑； 一壓板步驟：將每個所述曝光圖案的部分體積壓浸於所述保護膏中，使所述奈米金屬黏附於每個所述曝光圖案；其中，每個所述曝光圖案浸於所述保護膏中的體積高度與每個所述曝光圖案未浸於所述保護膏中的體積高度比值介於0.5～0.76； 一分離步驟：將所述金屬滾輪與所述保護膏分離，使黏附於每個所述曝光圖案的所述奈米金屬形成一保護層；以及 一滾輪形成步驟：蝕刻所述光阻層與所述外表面，而後去除所述光阻層以形成一轉印滾輪。 A method of manufacturing a transfer roller, comprising: A roller providing step: providing a metal roller, the outer surface of which is provided with a photoresist layer, and a plurality of exposure patterns are formed on the side of the photoresist layer relatively away from the outer surface; A substrate providing step: providing a substrate, a layer of protective paste is provided on any side thereof, and the protective paste contains a nanometer metal and a solvent; A pressing step: dipping a partial volume of each of the exposure patterns into the protective paste, so that the nanometer metal adheres to each of the exposure patterns; wherein, each of the exposure patterns is dipped in the The ratio of the volume height in the protective cream to the volume height of each exposed pattern not immersed in the protective cream is 0.5-0.76; a separation step: separating the metal roller from the protection paste, so that the nano metal adhered to each of the exposure patterns forms a protection layer; and A roller forming step: etching the photoresist layer and the outer surface, and then removing the photoresist layer to form a transfer roller. 如請求項1所述的轉印滾輪製造方法，其中，所述保護膏具有一保護膏厚度，其介於0.09微米～0.13微米之間。The method for manufacturing a transfer roller according to claim 1, wherein the protective paste has a thickness of 0.09 microns to 0.13 microns. 如請求項1所述的轉印滾輪製造方法，其中，任一個所述曝光圖案的深度小於所述光阻層的厚度。The method for manufacturing a transfer roller according to claim 1, wherein the depth of any one of the exposure patterns is smaller than the thickness of the photoresist layer. 如請求項1所述的轉印滾輪製造方法，其中，所述轉印滾輪製造方法進一步包含一固化步驟：以一固化裝置固化所述保護層；其中，所述固化步驟於所述分離步驟與所述滾輪形成步驟之間進行。The method for manufacturing a transfer roller according to claim 1, wherein the method for manufacturing a transfer roller further comprises a curing step: curing the protective layer with a curing device; wherein the curing step is performed between the separation step and the The roller forming steps are performed in between. 如請求項4所述的轉印滾輪製造方法，其中，所述固化裝置為一氙氣燈，其波長介於300奈米～1100奈米之間。The method for manufacturing a transfer roller according to claim 4, wherein the curing device is a xenon lamp with a wavelength between 300 nm and 1100 nm. 如請求項1所述的轉印滾輪製造方法，其中，所述滾輪形成步驟進一步包含一光阻蝕刻手段：透過非等向性蝕刻方式對所述光阻層進行蝕刻，使未形成有所述保護層的多個所述曝光圖案被移除，進而形成一圖案化光阻層。The method for manufacturing a transfer roller according to claim 1, wherein the roller forming step further includes a photoresist etching means: etching the photoresist layer through anisotropic etching, so that the photoresist layer is not formed A plurality of the exposure patterns of the protective layer are removed to form a patterned photoresist layer. 如請求項6所述的轉印滾輪製造方法，其中，所述光阻蝕刻手段是採用電漿蝕刻方式進行。The method for manufacturing a transfer roller according to claim 6, wherein the photoresist etching means is performed by plasma etching. 如請求項6所述的轉印滾輪製造方法，其中，所述滾輪形成步驟進一步包含一滾輪蝕刻手段：透過非等向性蝕刻方式並以所述圖案化光阻層為遮罩對所述金屬滾輪的所述外表面蝕刻，而於所述外表面形成多個壓印圖形。The method for manufacturing a transfer roller according to claim 6, wherein the roller forming step further includes a roller etching means: by anisotropic etching and using the patterned photoresist layer as a mask, the metal The outer surface of the roller is etched to form a plurality of embossed patterns on the outer surface. 如請求項8所述的轉印滾輪製造方法，其中，所述滾輪形成步驟進一步包含一圖案去除手段：將所述圖案化光阻層從所述金屬滾輪的所述外表面移除，進而形成所述轉印滾輪。The method for manufacturing a transfer roller according to claim 8, wherein the roller forming step further includes a pattern removal means: removing the patterned photoresist layer from the outer surface of the metal roller to form the transfer roller. 一種轉印滾輪，以如請求項1所述的轉印滾輪製造方法所製成。A transfer roller manufactured by the method for manufacturing a transfer roller as described in claim 1.
TW110108423A 2021-03-10 2021-03-10 Transfer roller and manufacturing method thereof TWI752844B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW110108423A TWI752844B (en) 2021-03-10 2021-03-10 Transfer roller and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW110108423A TWI752844B (en) 2021-03-10 2021-03-10 Transfer roller and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI752844B TWI752844B (en) 2022-01-11
TW202235289A true TW202235289A (en) 2022-09-16

Family

ID=80809268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108423A TWI752844B (en) 2021-03-10 2021-03-10 Transfer roller and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI752844B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI829601B (en) * 2023-06-14 2024-01-11 光群雷射科技股份有限公司 Manufacturing method of metal roller having seamless pattern

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8069782B2 (en) * 2004-12-20 2011-12-06 Nanoink, Inc. Stamps with micrometer- and nanometer-scale features and methods of fabrication thereof
TWI322927B (en) * 2006-05-24 2010-04-01 Ind Tech Res Inst Roller module for microstructure thin film imprint
US20120282554A1 (en) * 2008-01-22 2012-11-08 Rolith, Inc. Large area nanopatterning method and apparatus
CN102037407B (en) * 2008-04-25 2014-01-01 西北大学 Polymer pen lithography
TWI412891B (en) * 2009-11-04 2013-10-21 Univ Nat Cheng Kung Method for photo-curing contact printing micro/nano patterns
CN104749879A (en) * 2012-06-13 2015-07-01 旭化成电子材料株式会社 Function-transferring object, method for transferring functional layer, package and function-transferring film roll
TWM601832U (en) * 2020-06-12 2020-09-21 光群雷射科技股份有限公司 Lens transfer roller and lens transfer layer
TWM607547U (en) * 2020-10-07 2021-02-11 光群雷射科技股份有限公司 Transfer roller production equipment and optical film production equipment

Also Published As

Publication number Publication date
TWI752844B (en) 2022-01-11

Similar Documents

Publication Publication Date Title
CN102910579B (en) Nanoimprinting method capable of improving depth-to-width ratio of graph and product thereof
CN101446762B (en) Micro-complex type method for inducing electric field under the restrict of non-contact moulding board
CN104519666B (en) A kind of flexible die made for FPC and preparation method thereof
US9028639B2 (en) Method of manufacturing stamp for plasmonic nanolithography apparatus and plasmonic nanolithography apparatus
JP2010158805A (en) Method of manufacturing mold for photo imprinting
TW200843569A (en) Method for forming a photoresist-laminated substrate, method for plating an insulating substrate, method for surface treating of a metal layer of a circuit board, and method for manufacturing a multi layer ceramic condenser using metal nanoparticles aero
CN101837951B (en) Apparatus and method for graphically producing nano structures by way of electrode induction and microwave curing
CN103172019A (en) Preparation process of dry adhesive micro-nano compound two-stage inclined structure
KR20090076568A (en) A method for manufacturing nanosphere typed template for nanoimprint, a method for forming nanosphere single layer pattern using the same and an application method using the nanosphere signle layer pattern
CN112558419A (en) Processing method of large-caliber flexible optical super-structure surface structure
TWI719032B (en) A method for aligning metal layers in fabricating a multilayer printable electronic device
TW202235289A (en) Transfer roller and manufacturing method thereof
KR100930177B1 (en) Manufacturing method of stamp for nano imprint
CN102320132B (en) Process for micro replicating lyosol by induction of electric field
KR20090081924A (en) Method for forming nano-patterns using nano imprint lithography and lift-off process
JP2013202900A (en) Mold and method of manufacturing the same, nanoimprint method, and method of manufacturing patterned substrate
WO2020063272A1 (en) Ultra-thin composite transparent conductive film and preparation method therefor
CN108091552B (en) Method for preparing micro-nano structure pattern on light-transmitting substrate
CN116300304A (en) Mask plate suitable for UV-NIL technology, and preparation method and application thereof
KR101856231B1 (en) Transparent substrate with nano-pattern and method of manufacturing thereof
JP2013074257A (en) Mold for nanoimprint, method of manufacturing the same, and nanoimprint method
TWI264823B (en) Thin film transistor manufacture method and structure therefor
CN115079521A (en) Transfer roller and method for manufacturing the same
CN101834407A (en) Method for preparing surface-emitting surface plasma laser by utilizing nanoimprint technology
CN102350890B (en) Production technique of rolled holographic pattern film, holographic pattern film and system