CN102279519B - Three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method - Google Patents
Three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method Download PDFInfo
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- CN102279519B CN102279519B CN 201110192995 CN201110192995A CN102279519B CN 102279519 B CN102279519 B CN 102279519B CN 201110192995 CN201110192995 CN 201110192995 CN 201110192995 A CN201110192995 A CN 201110192995A CN 102279519 B CN102279519 B CN 102279519B
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Abstract
The invention relates to a three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method. The method comprises the steps of: firstly, processing an electrically-conductive die; secondly, spin-coating a glue on the die; thirdly, carrying out filling through scanning of a probe electrode; and finally, transferring a resist, so that three-dimensional-structured micron/nano patterns are obtained. According to the method provided by the invention, a polymer can be filled in different positions of the die with different depths, and a three-dimensional micron/nano structure can be reproduced.
Description
Technical field
The invention belongs to field of micro-Na manufacture, be specifically related to a kind of three-dimensional little/the fluid dielectrophoretic force of micro-nano structure scanning impression manufacturing process.
Technical background
Nanometer embossing is with its high-level efficiency, high precision, advantage is considered to have the Next Generation Lithography of broad prospect of application cheaply.Nanometer embossing not only has wide using value in integrated circuit manufacturing field, other is little/receive and also have important research and using value in the manufacturing field.Glue is lost in the resistance that traditional nanometer embossing utilizes high-precision template to be pressed into and is coated on the substrate, carries out the demoulding after the resistance erosion adhesive curing and can obtain to hinder accordingly erosion glue pattern with template.Traditional nano impression need to make mould be pressed into resistance erosion glue under action of mechanical pressure, and larger force of impression may make mould deform affects the complex precision, also can increase the difficulty that multilayer is aimed at, even can make mould or substrate that expendable deformation occurs.And the pattern of resistance erosion glue is once finished in the impression, can't obtain to have the resistance erosion glue pattern of arbitrary height.
The fluid dielectrophoretic force is that this masterpiece is used in liquid-gas interface for the dielectric fluid in electric field, points to gas phase from liquid phase, pulling dielectric fluid and moving.That the fluid dielectrophoretic force can effectively be controlled is little/receive the flowing of fluid, in micro-fluidic, obtained at present to use widely.There are some researches show, utilize dielectrophoretic force to drive prepolymer and fill cavity body of mould, replacing traditional mechanical pressure moulding process, thereby can overcome the drawback that larger mechanical pressure is brought.
Utilize probe electrode to produce internal field and can produce in the part fluid dielectrophoretic force, make this part mould cavity obtain filling, and other part cavitys are not aggregated the thing filling on every side, and by control probe electrode track while scan and execute alive size, can realize the different depth of mould diverse location is filled, behind the end-of-fill with mould and transfer to again cure polymer and the demoulding on the substrate, can obtain to have three-dimensional feature little/micro-nano structure.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of three-dimensional little/the fluid dielectrophoretic force of micro-nano structure scanning impression manufacturing process, make polymkeric substance realize the filling of different depth at the diverse location of mould, can copy three-dimensional little/micro-nano structure.
In order to achieve the above object, the technical scheme taked of the present invention is:
A kind of three-dimensional is little/the fluid dielectrophoretic force scanning impression manufacturing process of micro-nano structure, comprise the following steps:
1) processing conductive die, etch at silicon chip or quartz and to have micron or nano-scale patterns structure, then at the standby transparency conducting layer of the surperficial sequential system of patterning and dielectric layer, the thickness of transparency conducting layer is 50nm, and the thickness of dielectric layer is 1/10~1/100 of cavity body of mould width, transparency conducting layer is tin indium oxide ITO, dielectric layer is SiO2, when conductive die adopts silicon chip, need not again deposit transparency conducting layer, its dielectric layer obtains by hot oxygen technique
2) at the even glue of conductive die, spin coating ultraviolet cured adhesive, heat-curable glue or hot melt adhesive on conductive die, the thickness of glue are 2 times of the cavity body of mould degree of depth,
3) probe electrode scanning filling is inserted probe electrode or contact resistance erosion glue film, applies DC voltage between conductive die and probe electrode, voltage swing is with dielectric layer breakdown being limited not, then traveling probe electrode, then the scanned mold cavity of probe electrode is known from experience and is aggregated thing and fills into
4) resistance erosion glue shifts, and target substrate is covered on the resistance erosion glued membrane, then will hinder the erosion adhesive curing, curing and demolding, and the micro-/ nano pattern that can obtain having three-dimensional structure, target substrate is silicon or quartz.
Because the present invention has adopted dielectrophoretic force to replace traditional mechanical pressure, this dielectrophoretic force acts on and can drive liquid on the liquid-gas interface and fill in cavity body of mould; Probe electrode is done scanning motion in fluid film, apply different voltage in the motion and can make the cavity body of mould under the scanning pattern obtain different depth of cracking closures, so the structure of manufacturing of the present invention has three-dimensional characteristics.
Description of drawings
Fig. 1 is conductive die sectional schematic diagram of the present invention.
Fig. 2 is that the present invention is at conductive die surface coating synoptic diagram.
Fig. 3 is that probe electrode of the present invention is at conductive die surface scan synoptic diagram.
Fig. 4 is that target substrate of the present invention covers the synoptic diagram on the polymkeric substance.
Fig. 5 is polymer cure synoptic diagram of the present invention.
Fig. 6 is the three-dimensional structure sectional schematic diagram after the demoulding of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further details.
A kind of three-dimensional is little/the fluid dielectrophoretic force scanning impression manufacturing process of micro-nano structure, comprise the following steps:
1) processing conductive die, with reference to Fig. 1, silicon chip 2 etch have the micron or the nano-scale patterns structure, then obtain the dielectric material silica 1 on its surface through hot oxygen, perhaps etch at quartz little/receive patterning, then at the standby transparency conducting layer of the surperficial sequential system of patterning and dielectric layer, can obtain transparent conductive die, the thickness of bright conductive layer is 50nm, and the thickness of dielectric layer is 1/10~1/100 of cavity body of mould width
2) at the even glue of conductive die, with reference to Fig. 2, spin coating ultraviolet cured adhesive, heat-curable glue or hot melt adhesive on conductive die form one layer of polymeric film 3, and the thickness of thin polymer film 3 is 2 times of the cavity body of mould degree of depth,
3) probe electrode scanning filling, with reference to Fig. 3, probe electrode 4 is inserted or contact thin polymer film 3, apply DC voltage V at conductive die and 4 of probe electrodes, voltage swing is with dielectric layer breakdown being limited not, then the traveling probe electrode 4, then the scanned mold cavities of probe electrode 4 are known from experience and are aggregated thing film 3 and fill, and it is larger to apply voltage V, and depth of cracking closure is larger, can obtain by the size of control voltage V thus the filling of different depth
4) polymkeric substance shifts, with reference to Fig. 4, after scanning filling is finished, remove probe electrode 4, target substrate 5 is covered on the thin polymer film 3, with reference to Fig. 5, then thin polymer film 3 is solidified, curing characteristics according to polymkeric substance, by modes 6 such as UV-irradiation, heating, coolings liquid thin polymer film 3 is solidified, curing and demolding is with reference to Fig. 6, can obtain having in target substrate 5 the micro-/ nano pattern of three-dimensional structure, target substrate 5 is silicon or quartz.
Claims (1)
- A three-dimensional little/the fluid dielectrophoretic force scanning impression manufacturing process of micro-nano structure, it is characterized in that, comprise the following steps:1) processing conductive die, silicon chip etch have the micron or the nano-scale patterns structure, then prepare a dielectric layer by hot oxygen technique on the surface of patterning, quartz etch have the micron or the nano-scale patterns structure, then at the standby transparency conducting layer of the surperficial sequential system of patterning and a dielectric layer, the thickness of transparency conducting layer is 50nm, and the thickness of dielectric layer is 1/10~1/100 of cavity body of mould width, transparency conducting layer is tin indium oxide ITO, and dielectric layer is SiO 2,2) at the even glue of conductive die, spin coating ultraviolet cured adhesive, heat-curable glue or hot melt adhesive on conductive die form the one layer of polymeric film, and the thickness of thin polymer film is 2 times of the cavity body of mould degree of depth,3) probe electrode scanning filling, probe electrode is inserted or the contact thin polymer film, between conductive die and probe electrode, apply DC voltage, voltage swing is with dielectric layer breakdown being limited not, then traveling probe electrode, then the scanned mold cavity cognition of probe electrode is aggregated the thing film and fills into the filling of control voltage swing acquisition different depth4) polymkeric substance shifts, and target substrate is covered on the thin polymer film, then thin polymer film is solidified, and curing and demolding, the micro-/ nano pattern that can obtain having three-dimensional structure, target substrate is silicon or quartz.
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CN102566262B (en) * | 2012-02-29 | 2013-06-19 | 青岛理工大学 | Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate |
CN104122747A (en) * | 2014-08-08 | 2014-10-29 | 青岛理工大学 | Electroosmosis driving nanoimprint device and working method thereof |
CN111808533A (en) * | 2020-07-19 | 2020-10-23 | 湖州飞鹿新能源科技有限公司 | Crystalline silicon polishing gel special for Topcon battery and use method thereof |
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