CN1926686B - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN1926686B CN1926686B CN2004800424361A CN200480042436A CN1926686B CN 1926686 B CN1926686 B CN 1926686B CN 2004800424361 A CN2004800424361 A CN 2004800424361A CN 200480042436 A CN200480042436 A CN 200480042436A CN 1926686 B CN1926686 B CN 1926686B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- sealing ring
- semiconductor device
- ferroelectric
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/007373 WO2005117120A1 (ja) | 2004-05-28 | 2004-05-28 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1926686A CN1926686A (zh) | 2007-03-07 |
CN1926686B true CN1926686B (zh) | 2010-08-18 |
Family
ID=35451154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800424361A Expired - Fee Related CN1926686B (zh) | 2004-05-28 | 2004-05-28 | 半导体装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7652377B2 (zh) |
JP (1) | JPWO2005117120A1 (zh) |
CN (1) | CN1926686B (zh) |
WO (1) | WO2005117120A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5061520B2 (ja) | 2006-07-18 | 2012-10-31 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体ウェーハ |
JP2008198885A (ja) * | 2007-02-15 | 2008-08-28 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP5532867B2 (ja) * | 2009-11-30 | 2014-06-25 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに固体撮像素子の製造方法及び半導体装置 |
KR102276546B1 (ko) * | 2014-12-16 | 2021-07-13 | 삼성전자주식회사 | 수분 방지 구조물 및/또는 가드 링, 이를 포함하는 반도체 장치 및 그 제조 방법 |
KR102334377B1 (ko) | 2015-02-17 | 2021-12-02 | 삼성전자 주식회사 | 실링 영역 및 디커플링 커패시터 영역을 포함하는 반도체 소자 |
US10366956B2 (en) * | 2015-06-10 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5349366A (en) * | 1991-10-29 | 1994-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and process for fabricating the same and method of driving the same |
US6741316B2 (en) * | 2002-03-06 | 2004-05-25 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and fabricating method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5438023A (en) * | 1994-03-11 | 1995-08-01 | Ramtron International Corporation | Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like |
JP2000277465A (ja) | 1999-03-26 | 2000-10-06 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP4006929B2 (ja) * | 2000-07-10 | 2007-11-14 | 富士通株式会社 | 半導体装置の製造方法 |
JP2002134506A (ja) * | 2000-10-19 | 2002-05-10 | Mitsubishi Electric Corp | 半導体装置 |
JP2002262286A (ja) | 2001-03-02 | 2002-09-13 | Canon Inc | データ伝送方法、データ伝送装置、再生方法及び再生装置 |
JP3961399B2 (ja) | 2002-10-30 | 2007-08-22 | 富士通株式会社 | 半導体装置の製造方法 |
JP4342854B2 (ja) * | 2003-07-09 | 2009-10-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4659355B2 (ja) * | 2003-12-11 | 2011-03-30 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
KR200438861Y1 (ko) | 2006-12-28 | 2008-03-07 | 와토스코리아 주식회사 | 양변기 급수관 고정구조 |
-
2004
- 2004-05-28 WO PCT/JP2004/007373 patent/WO2005117120A1/ja active Application Filing
- 2004-05-28 CN CN2004800424361A patent/CN1926686B/zh not_active Expired - Fee Related
- 2004-05-28 JP JP2006513781A patent/JPWO2005117120A1/ja active Pending
-
2006
- 2006-09-18 US US11/522,440 patent/US7652377B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5349366A (en) * | 1991-10-29 | 1994-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and process for fabricating the same and method of driving the same |
US6741316B2 (en) * | 2002-03-06 | 2004-05-25 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and fabricating method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN1926686A (zh) | 2007-03-07 |
JPWO2005117120A1 (ja) | 2008-04-03 |
WO2005117120A1 (ja) | 2005-12-08 |
US20070012976A1 (en) | 2007-01-18 |
US7652377B2 (en) | 2010-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa County, Japan Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100818 Termination date: 20200528 |
|
CF01 | Termination of patent right due to non-payment of annual fee |