CN100521211C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN100521211C CN100521211C CNB2004800428080A CN200480042808A CN100521211C CN 100521211 C CN100521211 C CN 100521211C CN B2004800428080 A CNB2004800428080 A CN B2004800428080A CN 200480042808 A CN200480042808 A CN 200480042808A CN 100521211 C CN100521211 C CN 100521211C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- upper electrode
- film
- semiconductor device
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/007817 WO2005119780A1 (ja) | 2004-06-04 | 2004-06-04 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1943033A CN1943033A (zh) | 2007-04-04 |
CN100521211C true CN100521211C (zh) | 2009-07-29 |
Family
ID=35463134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800428080A Expired - Fee Related CN100521211C (zh) | 2004-06-04 | 2004-06-04 | 半导体装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7635885B2 (zh) |
JP (1) | JP5190198B2 (zh) |
CN (1) | CN100521211C (zh) |
WO (1) | WO2005119780A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1892421B (zh) * | 2005-07-07 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 形成存储结接触孔的方法 |
JP5163641B2 (ja) * | 2007-02-27 | 2013-03-13 | 富士通セミコンダクター株式会社 | 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法 |
US8450168B2 (en) * | 2010-06-25 | 2013-05-28 | International Business Machines Corporation | Ferro-electric capacitor modules, methods of manufacture and design structures |
US8587045B2 (en) | 2010-08-13 | 2013-11-19 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method of forming the same |
CN104617108B (zh) * | 2015-01-27 | 2017-06-27 | 深圳市华星光电技术有限公司 | 低温多晶硅tft基板结构 |
US11296147B2 (en) * | 2019-05-16 | 2022-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing memory device having spacer |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6242244A (ja) * | 1985-08-20 | 1987-02-24 | Toshiba Corp | 双方向ブロツクチエ−ン制御方式 |
JPH10144878A (ja) * | 1996-11-06 | 1998-05-29 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH10242426A (ja) * | 1996-12-26 | 1998-09-11 | Sony Corp | 半導体メモリセルのキャパシタ構造及びその作製方法 |
JP3655984B2 (ja) | 1997-01-24 | 2005-06-02 | 株式会社伊藤製作所 | 砂等の沈殿物の水切りバケットにおける水切部材 |
JP3055494B2 (ja) | 1997-06-10 | 2000-06-26 | 日本電気株式会社 | 強誘電体メモリ及びその製造方法 |
JP2000066371A (ja) * | 1998-08-17 | 2000-03-03 | Nec Corp | フォトマスク及びフォトレジストパターンの製造方法 |
US6611014B1 (en) | 1999-05-14 | 2003-08-26 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof |
JP2001358309A (ja) * | 1999-05-14 | 2001-12-26 | Toshiba Corp | 半導体装置 |
JP4979154B2 (ja) | 2000-06-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2002033459A (ja) * | 2000-07-14 | 2002-01-31 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6927410B2 (en) * | 2003-09-04 | 2005-08-09 | Silicon Storage Technology, Inc. | Memory device with discrete layers of phase change memory material |
JP4042730B2 (ja) * | 2004-09-02 | 2008-02-06 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
KR100568515B1 (ko) * | 2004-12-06 | 2006-04-07 | 삼성전자주식회사 | 저항 소자를 구비한 반도체소자 및 그 제조방법 |
-
2004
- 2004-06-04 JP JP2006514038A patent/JP5190198B2/ja not_active Expired - Fee Related
- 2004-06-04 CN CNB2004800428080A patent/CN100521211C/zh not_active Expired - Fee Related
- 2004-06-04 WO PCT/JP2004/007817 patent/WO2005119780A1/ja active Application Filing
-
2006
- 2006-11-20 US US11/601,807 patent/US7635885B2/en active Active
-
2009
- 2009-09-21 US US12/563,382 patent/US7927946B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPWO2005119780A1 (ja) | 2008-04-03 |
JP5190198B2 (ja) | 2013-04-24 |
CN1943033A (zh) | 2007-04-04 |
US20070097726A1 (en) | 2007-05-03 |
WO2005119780A1 (ja) | 2005-12-15 |
US20100009466A1 (en) | 2010-01-14 |
US7635885B2 (en) | 2009-12-22 |
US7927946B2 (en) | 2011-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: Fujitsu Microelectronics Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090729 Termination date: 20210604 |
|
CF01 | Termination of patent right due to non-payment of annual fee |