CN100559592C - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
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- CN100559592C CN100559592C CNB038247593A CN03824759A CN100559592C CN 100559592 C CN100559592 C CN 100559592C CN B038247593 A CNB038247593 A CN B038247593A CN 03824759 A CN03824759 A CN 03824759A CN 100559592 C CN100559592 C CN 100559592C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000003990 capacitor Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 43
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 28
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 33
- 239000002305 electric material Substances 0.000 claims description 31
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- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 229910052741 iridium Inorganic materials 0.000 claims description 10
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000010970 precious metal Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 27
- 238000004140 cleaning Methods 0.000 abstract description 10
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- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 abstract 1
- 239000010408 film Substances 0.000 description 336
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- 239000010410 layer Substances 0.000 description 19
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- 238000004544 sputter deposition Methods 0.000 description 13
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- -1 silica nitride Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
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- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
试验材料 | 中央部的剥离 | 边缘部的剥离 |
实施例No.1 | 0/40 | 0/40 |
实施例No.2 | 0/10 | 10/10 |
实施例No.3 | 0/7 | 0/7 |
实施例No.4 | 40/40 | 40/40 |
实施例No.5 | 4/13 | 2/13 |
试验材料 | 中央部的剥离 | 边缘部的剥离 |
实施例No.11 | 0/40 | 0/40 |
实施例No.12 | 0/7 | 0/7 |
实施例No.13 | 30/30 | 30/30 |
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/004748 WO2004093193A1 (ja) | 2003-04-15 | 2003-04-15 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1695248A CN1695248A (zh) | 2005-11-09 |
CN100559592C true CN100559592C (zh) | 2009-11-11 |
Family
ID=33193221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038247593A Expired - Fee Related CN100559592C (zh) | 2003-04-15 | 2003-04-15 | 半导体器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7390678B2 (zh) |
JP (1) | JP4901105B2 (zh) |
CN (1) | CN100559592C (zh) |
WO (1) | WO2004093193A1 (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100496886B1 (ko) * | 2003-02-28 | 2005-06-23 | 삼성전자주식회사 | 확장된 플레이트 전극을 갖는 강유전체 기억소자 및 그제조방법 |
KR100725690B1 (ko) * | 2003-07-08 | 2007-06-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치 및 그 제조방법 |
JP2005116756A (ja) * | 2003-10-07 | 2005-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP4308691B2 (ja) * | 2004-03-19 | 2009-08-05 | 富士通マイクロエレクトロニクス株式会社 | 半導体基板および半導体基板の製造方法 |
WO2006103779A1 (ja) * | 2005-03-30 | 2006-10-05 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP2006344684A (ja) * | 2005-06-07 | 2006-12-21 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP5076890B2 (ja) * | 2005-06-17 | 2012-11-21 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US7727897B2 (en) * | 2005-08-30 | 2010-06-01 | Sharp Laboratories Of America, Inc. | Method of etching a TE/PCMO stack using an etch stop layer |
JP4954898B2 (ja) * | 2005-12-08 | 2012-06-20 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP4791191B2 (ja) | 2006-01-24 | 2011-10-12 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2008124330A (ja) * | 2006-11-14 | 2008-05-29 | Fujitsu Ltd | 半導体装置の製造方法 |
JP5109395B2 (ja) * | 2007-02-14 | 2012-12-26 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US7968506B2 (en) * | 2008-09-03 | 2011-06-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process |
JP5295740B2 (ja) | 2008-12-04 | 2013-09-18 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
CN103811409B (zh) * | 2012-11-12 | 2016-04-20 | 中微半导体设备(上海)有限公司 | 一种增强低介电材料对TiN硬掩模刻蚀选择性的方法 |
JP2015149354A (ja) * | 2014-02-05 | 2015-08-20 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US9147689B1 (en) | 2014-04-16 | 2015-09-29 | Micron Technology, Inc. | Methods of forming ferroelectric capacitors |
KR20160133031A (ko) * | 2015-05-11 | 2016-11-22 | 에스케이하이닉스 주식회사 | 캐패시터를 포함하는 반도체장치 및 그 제조 방법 |
US9876018B2 (en) | 2015-12-03 | 2018-01-23 | Micron Technology, Inc. | Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material |
US10847201B2 (en) * | 2019-02-27 | 2020-11-24 | Kepler Computing Inc. | High-density low voltage non-volatile differential memory bit-cell with shared plate line |
US11476261B2 (en) | 2019-02-27 | 2022-10-18 | Kepler Computing Inc. | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor |
US20220139934A1 (en) * | 2020-10-30 | 2022-05-05 | Ferroelectric Memory Gmbh | Memory cell, capacitive memory structure, and methods thereof |
US11659714B1 (en) | 2021-05-07 | 2023-05-23 | Kepler Computing Inc. | Ferroelectric device film stacks with texturing layer, and method of forming such |
US11527277B1 (en) | 2021-06-04 | 2022-12-13 | Kepler Computing Inc. | High-density low voltage ferroelectric memory bit-cell |
US11997853B1 (en) | 2022-03-07 | 2024-05-28 | Kepler Computing Inc. | 1TnC memory bit-cell having stacked and folded planar capacitors with lateral offset |
US11741428B1 (en) | 2022-12-23 | 2023-08-29 | Kepler Computing Inc. | Iterative monetization of process development of non-linear polar material and devices |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5789320A (en) * | 1996-04-23 | 1998-08-04 | International Business Machines Corporation | Plating of noble metal electrodes for DRAM and FRAM |
TW345723B (en) * | 1996-07-09 | 1998-11-21 | Hitachi Ltd | Semiconductor memory and process for producing the same |
JP2000133633A (ja) * | 1998-09-09 | 2000-05-12 | Texas Instr Inc <Ti> | ハ―ドマスクおよびプラズマ活性化エッチャントを使用した材料のエッチング方法 |
KR20000042395A (ko) | 1998-12-24 | 2000-07-15 | 김영환 | 상부전극의 축소를 방지할 수 있는 캐패시터 제조 방법 |
US6635528B2 (en) * | 1999-12-22 | 2003-10-21 | Texas Instruments Incorporated | Method of planarizing a conductive plug situated under a ferroelectric capacitor |
US6548343B1 (en) * | 1999-12-22 | 2003-04-15 | Agilent Technologies Texas Instruments Incorporated | Method of fabricating a ferroelectric memory cell |
US6485988B2 (en) * | 1999-12-22 | 2002-11-26 | Texas Instruments Incorporated | Hydrogen-free contact etch for ferroelectric capacitor formation |
US6495413B2 (en) * | 2001-02-28 | 2002-12-17 | Ramtron International Corporation | Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits |
JP4428500B2 (ja) * | 2001-07-13 | 2010-03-10 | 富士通マイクロエレクトロニクス株式会社 | 容量素子及びその製造方法 |
JP2003059905A (ja) * | 2001-07-31 | 2003-02-28 | Applied Materials Inc | エッチング方法、キャパシタの製造方法、および半導体装置 |
JP2003059906A (ja) * | 2001-07-31 | 2003-02-28 | Applied Materials Inc | エッチング方法およびキャパシタを形成する方法 |
JP2003133292A (ja) * | 2001-10-29 | 2003-05-09 | Applied Materials Inc | エッチング方法及びキャパシタ形成方法 |
US6828161B2 (en) * | 2001-12-31 | 2004-12-07 | Texas Instruments Incorporated | Method of forming an FeRAM having a multi-layer hard mask and patterning thereof |
US6773930B2 (en) * | 2001-12-31 | 2004-08-10 | Texas Instruments Incorporated | Method of forming an FeRAM capacitor having a bottom electrode diffusion barrier |
US6713342B2 (en) * | 2001-12-31 | 2004-03-30 | Texas Instruments Incorporated | FeRAM sidewall diffusion barrier etch |
JP4368085B2 (ja) * | 2002-01-08 | 2009-11-18 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2003257942A (ja) * | 2002-02-28 | 2003-09-12 | Fujitsu Ltd | 半導体装置の製造方法 |
US6876021B2 (en) * | 2002-11-25 | 2005-04-05 | Texas Instruments Incorporated | Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier |
-
2003
- 2003-04-15 WO PCT/JP2003/004748 patent/WO2004093193A1/ja active Application Filing
- 2003-04-15 JP JP2004570870A patent/JP4901105B2/ja not_active Expired - Fee Related
- 2003-04-15 CN CNB038247593A patent/CN100559592C/zh not_active Expired - Fee Related
-
2005
- 2005-03-31 US US11/094,820 patent/US7390678B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7390678B2 (en) | 2008-06-24 |
WO2004093193A1 (ja) | 2004-10-28 |
CN1695248A (zh) | 2005-11-09 |
US20050244988A1 (en) | 2005-11-03 |
JP4901105B2 (ja) | 2012-03-21 |
JPWO2004093193A1 (ja) | 2006-07-06 |
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Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
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Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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Granted publication date: 20091111 Termination date: 20200415 |
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CF01 | Termination of patent right due to non-payment of annual fee |