CN1739135A - Oled电流驱动像素电路 - Google Patents
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Abstract
本发明提供了一种用于驱动有机发光二极管(OLED)像素电路的方法。该方法包括:在设置像素电路(200)的状态时,对OLED(220)的端子施加第一信号(Vdd1);以及在观测状态时,对该端子施加第二信号(Vdd2)。本发明还提供了一种用于OLED像素电路的驱动器,其中该驱动器采用该方法。
Description
技术领域
本发明涉及有机发光二极管(OLED)像素电路,更具体地说,本发明涉及一种用于驱动将对OLED提供电流的TFT器件的应力效应降低到最小的像素电路技术。
背景技术
有机发光二极管(OLED)像素可以采用在对其施加电流时发光的各种有机材料中的任何一种有机材料。OLED显示器包括多个被组织为阵列的OLED像素。
实现大规模、大规格OLED显示器的一种方法是使用有源矩阵薄膜晶体管(TFT)底板(back plane)。小型移动应用中的头部安装(head mount)显示器,甚至直观(direct view)显示器均可以采用多晶硅或结晶硅作为底板。因为在非晶硅平板技术方面的投资,所以兴趣点在,利用与多晶硅(p-Si)或结晶硅(c-Si)不同的非晶硅(a-Si)作为底板技术制造大型OLED显示器。大面积结晶硅底板的成本效益不如非晶硅或结晶硅的成本效益好。
非晶硅没有互补型器件,而在多晶硅或结晶硅中可以采用互补型器件,这有两个方面的原因:
(1)在非晶硅平板显示器(EPD)制造过程中,可以仅采用n沟道场效应晶体管(NFET),因为与多晶硅相比,光刻步骤较少,并因此成本较低;以及
(2)尽管可以制造,但是与n沟道场效应晶体管(NFET)相比,因为漂移(接近5至10的漂移率),p沟道场效应晶体管(PFET)显示较低迁移率(mobility)或电荷迁移,因此电流驱动也低。在传统生产线上,NFET的平均迁移率接近0.5至1.0cm2/V/秒。
因为处理OLED的方式,利用NFET配置的电流源通常不能驱动OLED。在传统有源矩阵寻址过程中,电压信号被写入每个像素以控制每个像素的亮度。阈值电压的移动性和稳定性特性以及非晶硅的迁移率适于驱动扭绞向列液晶(twisted nematic liquid crystal),扭绞向列液晶类似于电学上的小电容负载,其中以0.1%至0.001%的占空因数施加驱动电压。然而,为了驱动要求连续工作电流的OLED,所以在相当大部分时间内,非晶硅的工作电压是非零,例如至多100%的占空因数。高压和连续电流使非晶硅TFT严重受力。特别是,栅极-源极电压应力导致阈值电压发生变化,因为俘获充电以及诸如产生不良状态和在TFT的栅极绝缘体-半导体接口以及在半导体层内发生分子键断裂的其他效应。
在TFT的阈值电压发生变化时,通过TFT的电流也发生变化。由于电流发生变化,因此OLED的亮度也发生变化,因为OLED的光输出与电流成正比。观察者可以察觉到的像素与像素之间的光输出的变化小至1%。通常认为,高于5%的光度变化是不可接受的。
图1是用于小型a-Si底板显示器测试车的现有技术像素电路100的示意图。电路100包括NFET Q101和Q102、电容器Cs 110和OLED 120。
NFET Q101和Cs 110存储像素电压。栅极线125上的高压电平使NRET Q101接通,因此将电压从栅极线130施加到Cs 110。经过一段时间后,NFET Q102的数据电压与数据线130上的电压相同,而栅极线125上的电压被设置为低。NFET Q102作为电压跟随器工作以驱动OLED 120。通过OLED 120的电流来自电源电压Vdd,并返回电源电压VSS。在驱动OLED 120时,NFET Q102的阈值电压(Vt)随时间发生变化。OLED120两端的电压为:
Vdd-Vcs-Vgs(t)-Vss,
其中Vcs=Cs 110两端的电压;
Vgs(t)=是时间的函数的、NFET Q102的栅极-源极电压;以及
Vss=负电源电压或OLED阴极电压。
通过OLED 120或NFET Q102的电流与(Vgs-Vt)2成正比,因为在NFET Q102处于漏极-源极电压等于或者大于Vgs-Vt的饱和或恒流状态下,偏置NFET Q102。因此,OLED 120两端的电压和通过OLED 120的电流随NFET Q102的阈值电压(Vt)的变化而变化。因为各像素之间具有不同的驱动历史,所以像素与像素的电流和光度也发生变化。这被称为像素差异老化(differential aging)。对于许多应用,需要连续电流工作的NFET Q102的阈值变化是不可接受的。然而,在饱和状态下工作的NFET Q102的应力(stress)小于在NFET Q102在线性状态下被偏置的应力,漏极-源极电压<Vgs-Vt。
为了用在a-Si TFT底板上,电路100要求较低的功率和电压,因为只有一个NFET,即NFET 102从电源Vdd连接到OLED 120,OLED 120连接到电源电压Vss。由于OLED 120电流通过一个NFET,所以电源Vdd与Vss之间的电压差保持最小,即用于工作的NFET Q102的最大OLED 120电压和漏极-源极电压刚好处于饱和状态。
与电路100类似的电路分别利用可以采用多晶硅或结晶硅技术的PFET Q101和PFET Q102代替NFET Q101和NFET Q102。PFET Q102不是用作电压跟随器,而是用作电流源。PFET Q102的阈值电压对于进入OLED 120的电流具有更大的冲击作用,因为通过OLED 120的电流与(Vcs-Vt)2成正比,其中Vgs=Vcs。如果采用具有高跨导(transconductance)的结晶硅,则为了产生低到足以以100/cd/m2数量级的亮度驱动OLED 120的电流,Vgs电压必须低于Vt,因为像素的尺寸通常非常小。在亚阈值状态下的阈值电压变化对漏极电流的变化具有更大的冲击,因为对于阈值电压每60毫伏的变化,存在一个数量级的电流变化,或者受与亚阈值斜率相反的晶体管漏极电流-栅极电压,或者接近60mV/10倍(decade)电流控制。
为了将用于提供OLED电流的TFT器件的应力效应降低到最小,利用电流驱动写存储在像素电路内的电压。位于日本东京141-00017-35Kitashinagawa 6-chome,Shinagawa-ku的Sony公司展示一种位于13’’对角线800×600彩色有源矩阵OLED(AMOLED)显示器中的多晶硅电流反射镜像素。在2001SID InternationalSymposium Disgest of Technical Papers,volume XXXII,p384-387,“A 13.0-inch AM-OLED Display with top emitting structure andadaptive current mode programmed pixel circuit(TAC)”中,T.Sasaoka等人发表了Sony公司的电路。在Sony公司的电路中,数据线上的数据是电流形式的,而非电压形式的。然而,Sony公司的电路不对OLED驱动晶体管的阈值变化进行校正。
位于201 Washington Road Princeton New Jersey 08543-5300的Sarnoff公司开发了一种用在多晶硅上的四PFET晶体管电路,R.M.A.Dawson等人在“The impact of the transient response oforganic light emitting diodes on the design of active matrix OLEDdisplays”,IEDM,p875-878,1998中对它进行了描述。Sarnoff公司的电路利用数据线上的电流直接设置用于驱动OLED的晶体管内的电流。然而,该电流要求多晶硅,而且在OLED与电源之间采用两个串联的晶体管,而且它具有第三输入控制信号,该信号用于表示高清晰度显示器中的暗灰度级能力(dark gray scale capability)。第三输入控制增加了实际设计像素电路和进行阵列设计的复杂性。
位于5656 AA Eindhoven,the Netherlands的Phillips Research开发了另一种四多晶硅晶体管排列,T.van de Biggelaar等人在“Passive and active matrix addressed polymer light emitting diodedisplays”in Flat Panel Display Technology and Display Metrology IIof the Proceedings of the SPIE,Vol.4295p134-146,2001中对其进行了描述。这种排列消除了Sarnoff公司的电路中的第三输入控制信号,但是也是在电源与OLED之间采用两个串联的晶体管。消除第三输入使得它不能用于具有暗灰度级能力的高清晰度显示器。
University of Michigan,Ann,Arbor,MI 48109公布了一种采用使用数据线电流的四非晶硅NFET晶体管的类似电路,更具体地说,Yi He等人在“Current-source a-Si:H thin film transistor circuit foractive-matrix organic light-emitting displays”in IEEE ElectronDevice Letters,vol.21,No.12,p590-592,2000中对其进行了描述。该电路的一个局限性是,第二晶体管与OLED电流产生晶体管串联到电源。该像素电路也不能用于具有暗灰度级能力的高清晰度显示器。
发明内容
本发明提供了一种驱动有机发光二极管(OLED)像素电路的方法。该方法包括:在设置像素电路的状态时,将第一信号施加到OLED的端子;以及在观测该状态时,将第二信号施加到该端子。
本发明还提供了一种用于OLED像素电路的驱动器。该驱动器包括转换器,在设置像素电路的状态时,该转换器将第一信号施加到OLED的端子,而在观测该状态时,将第二信号施加到该端子。
附图说明
图1是现有技术像素电路的原理图。
图2是根据本发明被驱动的、具有公共阳极的像素电路的原理图。
图3是根据本发明被驱动的、具有公共阴极的像素电路的原理图。
具体实施方式
本发明提供了一种用于驱动将对OLED提供电流的TFT器件的应力效应降低到最小的像素电路(pixel circuit)技术。驱动电流用于写入存储在像素电路中的电压。该电路校正TFT器件的阈值变化。OLED电流通过单个晶体管,同时使得高清晰度显示器具有暗灰度级能力。
图2是根据本发明被驱动的像素电路200的原理图。利用数据线电流,利用可以支持阈值电压变化或迁移率变化的3NFET电路,可以精确建立通过OLED的电流。电路200包括NFET Q201、Q202和Q203、数据存储电容器Cs 210、OLED 220以及转换器(switch)235。电路200还包括栅极线230、数据线240以及电源电压Vdd和Vss。
转换器235工作以在设置像素电路200的状态时,将第一信号(Vdd1)施加或引到OLED 220的阳极端,而在观测(view)该状态时,将第二信号(Vdd2)施加到该阳极端。“设置状态”指将数据写入像素电路200,而“观测该状态”指测量(observe)OLED220的光度。利用转换器235,将Vdd设置为低,即设置为Vdd1,以将数据写入电路200;将它设置为高,即设置为Vdd2,以显示或观测电路200内的状态。Vss保持恒电位或电压。转换器235可以是任意一种适当转换器件,但是优先将它配置为采用晶体管的电控转换器。
在OLED 220被断开或不发光时,利用使NFET Q201和NFETQ202接通的栅极线230上的高压,将进入数据线240的电流形式的数据写入电流200。在Vdd1<Vss+2V时,OLED 220被断开。在OLED 220两端的电压为2V或更低而且基本不导通时,将OLED220看作被断开。对OLED 220的阳极施加Vdd1导致OLED 220基本不导通,而且可以被正向偏置或反向偏置。在OLED 220被断开时,通过OLED 220的电流非常小,因此不影响电路200的工作。NFET Q201的接通状态使电流或数据从数据线240流入NFET Q202和NFET Q203的漏极。NFET Q202的接通状态将NFET Q203的漏极端和栅极端连接到一起,迫使NFET Q203的漏极电压与栅极电压相同。这样确保NFET Q203处于其中漏极-源极电压等于或者大于其栅极-源极电压减阈值电压的饱和状态或恒流状态。NFET Q202的接通状态对数据存储电容器Cs210进行充电或放电,直到NFETQ202不再导通电流,而且NFET Q203的漏极-源极电流与流入数据线240的电流匹配。数据存储器Cs210两端的电压保持NFETQ203的栅极-源极电压。在在栅极线230为低的饱和状态下工作时,这样可以使NFET Q203的漏极-源极电流与在栅极线230为高时进入数据线240的电流大致相同。如果栅极线230被设置为低,则可以将进入数据线240的值设置为任何其他值,而无需调节(modify)通过NFET Q203的漏极-源极电流。
栅极线230上的低压使NFET Q201和NFET Q202断开。对OLED 220的阳极施加Vdd2可以使OLED 220接通或发光。通过转换器235,Vdd升高到Vdd2,即升高到比Vgs-Vt+Voled(max)+Vss高的电压,以确保NFET Q203的漏极-源极电压高于NFET Q203的夹断电压Vgs-Vt。Voled(max)是最高工作光度时OLED 220的电压。如果因为将栅极线230转换到低,而将Vdd转换到Vdd2,使得不存在电容耦合效应,则NFET Q203将吸收通过OLED 220的电流以与数据线240输出的原始电流匹配。通过OLED 220的电流是通过NFET Q203的漏极-源极电流。
在栅极线230变成低时,Q202的栅极-源极电容倾向于降低存储电容器Cs 210上的电压。在Vdd变成高时,OLED 220的电容提高NFET Q203的漏极端上的电压,而其漏极-栅极电容倾向于提高存储电容器Cs 210的电压。由于栅极线230和电源电压Vdd以相反方向摆动,所以如果精心设计NFET Q202和Q203的沟道宽度和长度,可以完全排除组合耦合。由于采用写数据和观测数据的驱动方法,而且对于显示器上的所有像素,耦合到存储电容器Cs 210的组合电容电压相同,所以通过调节流入数据线240的数据或电流,还可以降低或者校正耦合到存储电容器Cs 210的组合电容电压。
电路200引入了OLED 220的公共阳极排列,在这种排列中,通过连接到电源电压Vdd,OLED 220的阳极与其他OLED阳极(未示出)共用。因此,转换器235选择性地将Vdd1或Vdd2引导到多个像素电路的阳极端。通常,制造公共阳极OLED排列比制造公共阴极OLED排列困难。
为了使电子和空穴有效注入OLED有机层,重要的是选择,其功函数(work function)或从真空能级到费米能级的能差与最高占用分子轨道(HOMO)能量和最低未占用分子轨道(LUMO)能量匹配的阳极材料和阴极材料。阳极的典型功函数为4-5eV,而阴极的典型功函数为2.7-5.3eV。
为了具有更高的效率,OLED阳极材料必须是高功函数的导体,从而有助于使空穴有效注入相邻有机层的HOMO内,而OLED阴极材料必须是低功函数的导体,从而使电子有效注入相邻有机层的LUMO内。高功函数金属是氧化锡铟ITO、氧化锌铟IZO、镍Ni等,而且通常随后对阳极电极和有机空穴迁移层之间的接口(interface)进行接口氧化处理。接口氧化处理确保最高功函数势垒的高度适于给定阳极电极,而且可以利用处理行业中的几种方式,例如一分钟到几分钟的氧O2等离子处理,进行接口氧化处理。
相反,OLED阴极材料必须是低功函数金属导体,例如氟化锂LiF、钙Ca、镁金合金MgAu等,对有机层接口处的导体电极进行氧化处理降低了电子注入效率。尽管上或下发光结构和可能的,但是如果在存在有机层和阴极材料之前完成阳极材料和有机层接口氧化处理,则可以大大简化该处理过程。如果采用公共阴极,则可以进一步简化该处理过程,因为在沉积有机层后,不要求激活像素区具有图形。
图3是根据本发明并引入公共阴极配置的像素电路300的原理图。利用数据线电流,采用可以支持阈值电压或迁移率变化的3-NFET电路,可以精确建立通过OLED的电流。
电路300引入了浮动电流源/吸收电路结构。电路300包括NFET Q301、Q302和Q303、数据存储电容器Cs 310、OLED 320以及转换器325。电路300还包括栅极线330和数据线340。
通过转换器325,电源电压Vss被设置为低,即被设置为Vss1,以观测写入电路300的数据。正电源电压Vdd保持恒压。转换器325可以是任何一种适当转换器件,但是优先配置为采用晶体管的电控转换器。
在栅极线330上的电压变成高时,NFET Q301和Q302被接通。Vss被设置为高,即被设置为Vss2,该电压>Vdd-2V。对OLED320的阴极施加Vss2使OLED 320断开,而且不发光。在OLED 320断开时,通过OLED 320的电流非常低,因此不影响电路300的工作。从数据线340吸收或牵出(pull out)电流形式的数据。在电流停止流过数据存储电容器Cs310,而仅流过NFET Q303时,NFETQ302将NFET Q303的栅极连接到Vdd,确保NFET Q303在饱和状态下工作。NFET Q303作为与从数据线340吸收的电流匹配的电流源工作。
Vss1是<Vdd-Vgs+Vt-Voled(max)的电压,其中Voled(max)是在以最高光度发光时OLED 320两端的电压,对OLED 320的阴极施加Vss1可以使OLED 320接通或者发光。在栅极线330的电压变成低并将Vss设置为低,即设置为Vss1以确保NFET Q303处于饱和状态(Vdd-Vgs+Vt-Voled)时,NFET Q303的漏极-源极电流将流过OLED 320。
在栅极线330变成低时,NFET Q302的栅极-源极电容倾向于降低存储电容器Cs 310上的电压。在栅极线330变成低时,NFETQ301的栅极-源极电容倾向于提高存储电容器Cs 310上的电压。在Vss被设置为低,即被设置为Vss1时,OLED 320的电容和NFETQ303的栅极-漏极电容倾向于提高数据存储电容器Cs 310的电压。如果精心设计NFET Q301、Q302和Q303的沟道宽度和长度,可以完全排除数据存储电容器Cs 310上的电压耦合。由于采用写数据和显示数据的驱动方法,而且对于显示器上的所有像素,耦合到存储电容器Cs 310的组合电容电压相同,所以通过调节从数据线340牵出的数据或电流,还可以降低或者校正耦合到存储电容器Cs 310的组合电容电压。可以将数据存储电容器Cs 310和NFET Q303看作浮动电流源,而无需基准电源电压。
本发明另一个方面是可以有效减少观测以使高写入电流写入像素。这种电路最好处理8位灰度级。为此,至少需要将OLED电流改变两个数量级。
在高清晰度显示器中,利用适于将电流写入像素电路的低灰度级电流对数据线的电容进行充电或放电所需的时间可能超过栅极线的接通时间。一种解决方案是采用高数据线电流并缩短像素电路数据的观测时间。通过调节在此期间将图2所示的电源电压Vdd设置到高至Vdd2的时间,并通过调节在此期间将图3所示的电源电压Vss设置到低至Vss1的时间,可以调节观测时间。就是这样消除了现有技术所示的第四晶体管和第三像素电路输入信号。这有助于减小电源电压和功耗,因为消除了现有技术中使用的第四晶体管上的电压降。
在具有大量像素的显示器中,连接到OLED的电源,在电路200中为Vdd,而在电路300中为Vss,它同样连接到显示器中的所有像素。然而,将Vdd或Vss接线分成分别具有单独转换器(在电路200中为转换器235,而在电路300中为转换器325)而且分别具有单独观测时间的多个接线是有益的。例如,观测时间在时间上交错实现扩展,从而减小峰值或最大Vdd或Vss电流。小电流可以减小Vdd或Vss电压分布中的电压降。
因为在电路200中为NFET Q201和NFET Q202,而在电路300中为NFET Q301和NFET Q302上的正常工作电压而产生的电应力类似于有源矩阵液晶显示器中的电应力。这些NFET起具有非常低占空因数的转换器的作用。与现有技术相比,本发明可以将对OLED提供电流的、在电路200中为Q203,而在电路300中为Q303的NFET的应力效应降低到最小。在本发明中,在写数据时,在电路200中为Vdd1,而在电路300中为Vss2不仅可以被设置为断开OLED,而且可以被设置为改变在电路200中为NFET Q203,而在电路300中为Q303上的漏极-源极电压极性和栅极-漏极电压极性。反向极性有助于消除位于栅极-漏极氧化物区域以及漏极-源极沟道区内的捕捉电荷。应该注意,还可以使在电路200中为NFETQ203,而在电路300中为NFET Q303的栅极-源极电压极性反向。在写时,可以施加在电路200中小于数据线240上的Vss,而在电路300中小于数据线340上的Vdd的电压。在观测先前像素状态后,而在将下一个状态写入像素之前,写数据线上的电压以使在电路200中为NFET Q203的栅极-源极电压,而在电路300中为Q303的栅极-源极电压反向。
可以在非晶硅、多晶硅或结晶硅上实现电路200和300。为了用在PMOS器件上,可以容易地修改电路200和300。
本技术领域内的熟练技术人员应该明白,可以设想出各种变换例和修改。本发明意在包括属于所附权利要求的所有这些变换例、修改和变化。
Claims (17)
1、一种用于驱动有机发光二极管(OLED)像素电路的方法,该方法包括:
在设置所述像素电路的状态时,对所述OLED的端子施加第一信号;以及
在观测所述状态时,对所述端子施加第二信号。
2、根据权利要求1所述的方法,其中所述第一信号使所述OLED断开。
3、根据权利要求1所述的方法,其中所述第一信号使所述OLED被反向偏置。
4、根据权利要求1所述的方法,其中所述第二信号使所述OLED被正向偏置。
5、根据权利要求1所述的方法,其中利用电流驱动设置所述状态。
6、根据权利要求1所述的方法,该方法进一步包括改变所述第一信号对所述第二信号的占空因数。
7、根据权利要求1所述的方法,其中所述像素电路是多个像素电路之一,而且其中所述方法进一步包括对所述多个像素电路中的每个像素电路的端子施加所述第一信号和所述第二信号。
8、一种用于驱动有机发光二极管(OLED)像素电路的驱动器,该驱动器包括:
转换器,
其中在设置所述像素电路的状态时,所述转换器将第一信号转换到所述OLED的端子;以及
其中在观测所述状态时,所述转换器将第二信号转换到所述端子。
9、根据权利要求8所述的驱动器,其中所述第一信号使所述OLED断开。
10、根据权利要求8所述的驱动器,其中所述第一信号使所述OLED被反向偏置。
11、根据权利要求8所述的驱动器,其中所述第二信号使所述OLED被正向偏置。
12、根据权利要求8所述的驱动器,其中利用电流驱动设置所述状态。
13、根据权利要求8所述的驱动器,其中所述转换器被控制,以改变所述第一信号对所述第二信号的占空因数。
14、根据权利要求8所述的驱动器,其中利用从包括非晶硅、多晶硅以及结晶硅的组中选择的材料配置所述像素电路。
15、根据权利要求8所述的驱动器,其中通过单个晶体管,所述像素电路提供通过所述OLED的电流。
16、根据权利要求15所述的驱动器,其中在所述转换器将所述第二信号转换到所述端子时,所述晶体管在饱和状态下工作。
17、根据权利要求8所述的驱动器,
其中所述像素电路是多个像素电路之一,以及
其中所述转换器将所述第一信号和所述第二信号转换到所述多个像素电路的每个像素电路的端子。
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2002
- 2002-06-21 KR KR1020037015151A patent/KR100593276B1/ko not_active IP Right Cessation
- 2002-06-21 WO PCT/US2002/019600 patent/WO2003001496A1/en active Application Filing
- 2002-06-21 EP EP02746606A patent/EP1405297A4/en not_active Withdrawn
- 2002-06-21 US US10/176,931 patent/US6734636B2/en not_active Expired - Lifetime
- 2002-06-21 JP JP2003507800A patent/JP4383852B2/ja not_active Expired - Fee Related
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CN101739955B (zh) * | 2008-11-07 | 2013-01-02 | 索尼株式会社 | 像素电路、显示装置及电子设备 |
CN104392690A (zh) * | 2014-10-28 | 2015-03-04 | 中国电子科技集团公司第五十五研究所 | 应用于具有公共阳极的amoled像素单元电路 |
CN104392690B (zh) * | 2014-10-28 | 2017-04-19 | 中国电子科技集团公司第五十五研究所 | 应用于具有公共阳极的amoled像素单元电路 |
WO2019095298A1 (zh) * | 2017-11-17 | 2019-05-23 | 深圳市柔宇科技有限公司 | 像素电路、柔性显示屏和电子装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2003001496A1 (en) | 2003-01-03 |
KR100593276B1 (ko) | 2006-06-26 |
EP1405297A4 (en) | 2006-09-13 |
US20020195968A1 (en) | 2002-12-26 |
JP4383852B2 (ja) | 2009-12-16 |
EP1405297A1 (en) | 2004-04-07 |
JP2004531772A (ja) | 2004-10-14 |
US6734636B2 (en) | 2004-05-11 |
CN100380433C (zh) | 2008-04-09 |
KR20040005974A (ko) | 2004-01-16 |
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