JP2005340721A - 高誘電率誘電体膜を堆積する方法 - Google Patents
高誘電率誘電体膜を堆積する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000000151 deposition Methods 0.000 title claims abstract description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 4
- 238000005121 nitriding Methods 0.000 claims abstract description 3
- 230000001590 oxidative effect Effects 0.000 claims abstract 3
- 238000000137 annealing Methods 0.000 claims description 26
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229910052735 hafnium Inorganic materials 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005546 reactive sputtering Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 113
- 235000012431 wafers Nutrition 0.000 description 46
- 239000007789 gas Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012707 chemical precursor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【選択図】 図2
Description
第1の技術において、化学的プリカーサー、好ましくは金属有機複合物がプラズマまたは熱的エネルギによって分解され、そして適当なガスと反応して、望ましいより高い誘電率を有する誘電体物質を作る。この技術は通常MO−CVD技術と呼ばれている。
第2の方法において、2つの化学的媒介物が基板に対して導入され、それは各ガス導入の間でタイムブレークを交互に作りながら導入される。当該タイムブレークの間、第1に導入されたガスは基板の表面に吸収された分子を除いて排気される。第2の媒介物が導入されるとき、それは当該表面に吸収された第1ガスの分子と反応し、誘電体膜を形成する。それから、残存する過剰なガスは、次のガス投入に至るまでのタイムブレークの間に排気される。この技術は、原子層堆積(ALD)技術と呼ばれている。
[実施形態1]
(2): 当該ウェハーを乾燥する(ステップS1)。
(3): 反応性スパッタリング技術によってウェハー上にHfN膜を堆積する(ステップS2)。
(4): 約1%の含有率で酸素を含むほとんどが不活性ガスまたはN2である環境で400℃を越える高い温度でウェハーをアニールする(ステップS3)。
Arガス流速 20sccm
N2ガス流速 6sccm
DC電力 300W
成膜速度 2.4nm/分
成膜時間 12.5秒
HfN膜厚み 0.5nm
HfN膜抵抗値 516μ/Ωcm
HfN膜均一性 0.95%(1σ)
[実施形態2]
(2): ウェハーを乾燥する。
(3): NH3のガス雰囲気で500℃を越えて熱アニ−ルする。
(4): 反応性スパッタリング技術においてHfNを堆積する。
(5): 約1%の含有率の酸素を含むほとんどが不活性ガスまたはN2の雰囲気において400℃を越えるより高い温度でウェハーをアニールする。
[実施形態3]
(2): ウェハーを乾燥する。
(3): CVDまたはRTPプロセスによって下地層と呼ばれるSiO2またはSiONまたはSi3N4の非常に薄い層を堆積する。
(4): 反応性スパッタリング技術によってHfNを堆積する。
(5): 約1%の含有率の酸素を含むほとんどが不活性ガスまたはN2の雰囲気において400℃を越えるより高い温度でウェハーをアニールする。
11 ウェハーホルダ
12 ターゲット
19 マグネット配列
22 ウェハー
Claims (9)
- 基板のドープシリコン層またはドープシリコン化合物層に高誘電率誘電体膜を堆積する方法であり、
特定元素(A)を窒化して前記シリコン層上に窒化膜(AxNy)を形成する第1ステップであって、前記窒化膜(AxNy)で前記特定元素(A)と前記窒素(N)との間でxとyは所定割合の関係を有する前記第1ステップと、
前記窒化膜を酸素雰囲気で酸化し、酸化かつ窒化された前記誘電体膜(AON)を形成する第2ステップ、
を含む高誘電率誘電体膜を堆積する方法。 - 前記特定元素は、元素周期表の3族、4族、または5族に属するいずれかの元素である請求項1記載の高誘電率誘電体膜を堆積する方法。
- 前記窒化膜(AxNy)における前記特定元素(A)と前記窒素(N)は、yがそのストチオメトリック値(stochiometric value)よりも小さいという関係を有する請求項1記載の高誘電率誘電体膜を堆積する方法。
- 前記特定元素(A)はハフニウム(Hf)である請求項2記載の高誘電率誘電体膜を堆積する方法。
- 前記窒化膜(HfxNy)で前記ハフニウム(Hf)と前記窒素(N)はx=1に対して0<y<1.5の関係を有する請求項4記載の高誘電率誘電体膜を堆積する方法。
- 前記第2ステップでの酸化プロセスは400〜1000℃の温度範囲に含まれる特定温度で熱的アニールプロセスによって実行される請求項1〜5のいずれか1項に記載の高誘電率誘電体膜を堆積する方法。
- 膜堆積のために反応性スパッタリング法が用いられる請求項1〜6のいずれか1項に記載の高誘電率誘電体膜を堆積する方法。
- 前記シリコン層上にSiO2層、SiN層、およびSiON層のいずれかが設けられ、前記第2ステップで他の高誘電率誘電体膜(AON)が堆積する請求項1記載の高誘電率誘電体膜を堆積する方法。
- 前記第1ステップでの窒化プロセスのために供給される窒素ガス(N2)の流速は1〜15sccmの範囲に含まれるいずれかの値である請求項1記載の高誘電率誘電体膜を堆積する方法。
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US11/141,044 US7816283B2 (en) | 2004-05-31 | 2005-06-01 | Method of depositing a higher permittivity dielectric film |
US12/419,320 US20090218217A1 (en) | 2004-05-31 | 2009-04-07 | Sputtering apparatus for depositing a higher permittivity dielectric film |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011029478A (ja) * | 2009-07-28 | 2011-02-10 | Canon Anelva Corp | 誘電体膜、誘電体膜を用いた半導体装置の製造方法及び半導体製造装置 |
US10378100B2 (en) | 2008-06-25 | 2019-08-13 | Canon Anelva Corporation | Sputtering apparatus and recording medium for recording control program thereof |
WO2022190817A1 (ja) * | 2021-03-11 | 2022-09-15 | 国立大学法人東京工業大学 | 強誘電性薄膜の形成方法、それを備える半導体装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097300B2 (en) * | 2006-03-31 | 2012-01-17 | Tokyo Electron Limited | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition |
US7816737B2 (en) * | 2006-03-31 | 2010-10-19 | Tokyo Electron Limited | Semiconductor device with gate dielectric containing mixed rare earth elements |
US7759746B2 (en) * | 2006-03-31 | 2010-07-20 | Tokyo Electron Limited | Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements |
US8012442B2 (en) * | 2006-03-31 | 2011-09-06 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
US20070237697A1 (en) * | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition |
WO2008042695A2 (en) * | 2006-09-29 | 2008-04-10 | Tokyo Electron Limited | Semiconductor devices containing nitrided high dielectric constant films and method of forming |
US20080079111A1 (en) * | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Semiconductor devices containing nitrided high dielectric constant films |
US7767262B2 (en) * | 2006-09-29 | 2010-08-03 | Tokyo Electron Limited | Nitrogen profile engineering in nitrided high dielectric constant films |
WO2009031232A1 (ja) * | 2007-09-07 | 2009-03-12 | Canon Anelva Corporation | スパッタリング方法および装置 |
US8076241B2 (en) * | 2009-09-30 | 2011-12-13 | Tokyo Electron Limited | Methods for multi-step copper plating on a continuous ruthenium film in recessed features |
US20120313186A1 (en) * | 2011-06-08 | 2012-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polysilicon gate with nitrogen doped high-k dielectric and silicon dioxide |
EP3842861A1 (en) * | 2019-12-23 | 2021-06-30 | Imec VZW | A method for forming an euvl pellicle |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5114556A (en) * | 1989-12-27 | 1992-05-19 | Machine Technology, Inc. | Deposition apparatus and method for enhancing step coverage and planarization on semiconductor wafers |
JPH08293494A (ja) | 1995-04-24 | 1996-11-05 | Canon Inc | 半導体装置 |
US5780908A (en) | 1995-05-09 | 1998-07-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor apparatus with tungstein nitride |
US5903246A (en) * | 1997-04-04 | 1999-05-11 | Sarnoff Corporation | Circuit and method for driving an organic light emitting diode (O-LED) display |
US5952789A (en) * | 1997-04-14 | 1999-09-14 | Sarnoff Corporation | Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor |
US6229506B1 (en) * | 1997-04-23 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
US6020243A (en) * | 1997-07-24 | 2000-02-01 | Texas Instruments Incorporated | Zirconium and/or hafnium silicon-oxynitride gate dielectric |
JP3767877B2 (ja) * | 1997-09-29 | 2006-04-19 | 三菱化学株式会社 | アクティブマトリックス発光ダイオード画素構造およびその方法 |
JPH11168096A (ja) | 1997-12-04 | 1999-06-22 | Sony Corp | 高誘電酸化膜の形成方法 |
JP3252897B2 (ja) * | 1998-03-31 | 2002-02-04 | 日本電気株式会社 | 素子駆動装置および方法、画像表示装置 |
DE19902769A1 (de) * | 1999-01-25 | 2000-07-27 | Philips Corp Intellectual Pty | Keramisches, passives Bauelement |
US6465828B2 (en) * | 1999-07-30 | 2002-10-15 | Micron Technology, Inc. | Semiconductor container structure with diffusion barrier |
US6358788B1 (en) | 1999-08-30 | 2002-03-19 | Micron Technology, Inc. | Method of fabricating a wordline in a memory array of a semiconductor device |
EP1087507B1 (en) * | 1999-09-21 | 2004-10-13 | STMicroelectronics S.r.l. | Method of controlling a DC-DC converter |
JP2001147659A (ja) * | 1999-11-18 | 2001-05-29 | Sony Corp | 表示装置 |
US6576967B1 (en) * | 2000-09-18 | 2003-06-10 | Motorola, Inc. | Semiconductor structure and process for forming a metal oxy-nitride dielectric layer |
JP3736399B2 (ja) * | 2000-09-20 | 2006-01-18 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置の駆動回路及び電子機器及び電気光学装置の駆動方法及び電気光学装置 |
KR100351907B1 (ko) | 2000-11-17 | 2002-09-12 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 전극 형성방법 |
WO2003001496A1 (en) * | 2001-06-22 | 2003-01-03 | Ibm Corporation | Oled current drive pixel circuit |
US6440797B1 (en) * | 2001-09-28 | 2002-08-27 | Advanced Micro Devices, Inc. | Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory |
JP3746478B2 (ja) | 2001-12-18 | 2006-02-15 | 松下電器産業株式会社 | 半導体装置の製造方法 |
CN100468638C (zh) | 2001-12-18 | 2009-03-11 | 松下电器产业株式会社 | 半导体元件的制造方法 |
US7023141B2 (en) * | 2002-03-01 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and drive method thereof |
FR325790A (fr) * | 2002-03-28 | 1903-05-08 | Kempshall Eleazer | Balle perfectionnée pour le jeu de golf |
WO2004042783A2 (en) | 2002-05-17 | 2004-05-21 | The Regents Of The University Of California | Hafnium nitride buffer layers for growth of gan on silicon |
KR20040019207A (ko) * | 2002-08-27 | 2004-03-05 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자와 그의 구동장치 및 방법 |
JP3949040B2 (ja) * | 2002-09-25 | 2007-07-25 | 東北パイオニア株式会社 | 発光表示パネルの駆動装置 |
JP3988041B2 (ja) * | 2002-10-08 | 2007-10-10 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びその製造方法 |
JP2004266263A (ja) | 2003-02-12 | 2004-09-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
CN100401478C (zh) * | 2003-02-12 | 2008-07-09 | 松下电器产业株式会社 | 半导体器件的制造方法 |
US7023064B2 (en) * | 2004-06-16 | 2006-04-04 | International Business Machines Corporation | Temperature stable metal nitride gate electrode |
-
2004
- 2004-05-31 JP JP2004160928A patent/JP2005340721A/ja active Pending
-
2005
- 2005-06-01 US US11/141,044 patent/US7816283B2/en not_active Expired - Fee Related
-
2009
- 2009-04-07 US US12/419,320 patent/US20090218217A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10378100B2 (en) | 2008-06-25 | 2019-08-13 | Canon Anelva Corporation | Sputtering apparatus and recording medium for recording control program thereof |
JP2011029478A (ja) * | 2009-07-28 | 2011-02-10 | Canon Anelva Corp | 誘電体膜、誘電体膜を用いた半導体装置の製造方法及び半導体製造装置 |
WO2022190817A1 (ja) * | 2021-03-11 | 2022-09-15 | 国立大学法人東京工業大学 | 強誘電性薄膜の形成方法、それを備える半導体装置 |
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