CN1328295C - 用于形成精细图形的助剂及其制备方法 - Google Patents
用于形成精细图形的助剂及其制备方法 Download PDFInfo
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- CN1328295C CN1328295C CNB2004800077756A CN200480007775A CN1328295C CN 1328295 C CN1328295 C CN 1328295C CN B2004800077756 A CNB2004800077756 A CN B2004800077756A CN 200480007775 A CN200480007775 A CN 200480007775A CN 1328295 C CN1328295 C CN 1328295C
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- water
- polyvinyl alcohol
- modified polyvinyl
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Images
Classifications
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F16/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/28—Condensation with aldehydes or ketones
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2810/00—Chemical modification of a polymer
- C08F2810/20—Chemical modification of a polymer leading to a crosslinking, either explicitly or inherently
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/44—Preparation of metal salts or ammonium salts
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
聚合物 | 加热温度(℃) | 加热时间(分钟) | 高分子量主体成分的数量 | 可滤性的评价 | |
实施例1 | B | 100 | 180 | 100或更少 | ○ |
实施例2 | C | 100 | 15 | 100或更少 | ○ |
实施例3 | D | 80 | 180 | 300 | ○ |
对比例1 | A | - | - | 2700 | X |
对比例2 | E | 60 | 180 | 2400 | X |
聚合物 | 高分子量主体成分的数量(ppm) | 涂覆后的缺陷数目(个/晶片) | 显影后的缺陷数目(个/晶片) | |
实施例4 | B | 100或更少 | 50 | 65 |
实施例5 | C | 100或更少 | 55 | 72 |
实施例6 | D | 300 | 75 | 84 |
对比例3 | A | 2700 | 160 | 183 |
对比例4 | E | 2400 | 112 | 146 |
贮存前 | 贮存两周后 | 贮存1月后 | |||
5℃贮存 | 25℃贮存 | 5℃贮存 | 25℃贮存 | ||
实施例7 | 100或更少 | 100 | 200 | 200 | 200 |
对比例5 | 100或更少 | 4000 | 5800 | 9900 | 10800 |
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP090376/2003 | 2003-03-28 | ||
JP2003090376A JP4012480B2 (ja) | 2003-03-28 | 2003-03-28 | 微細パターン形成補助剤及びその製造法 |
Publications (2)
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CN1764675A CN1764675A (zh) | 2006-04-26 |
CN1328295C true CN1328295C (zh) | 2007-07-25 |
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CNB2004800077756A Expired - Fee Related CN1328295C (zh) | 2003-03-28 | 2004-03-18 | 用于形成精细图形的助剂及其制备方法 |
Country Status (7)
Country | Link |
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US (1) | US7598320B2 (zh) |
JP (1) | JP4012480B2 (zh) |
KR (1) | KR101059378B1 (zh) |
CN (1) | CN1328295C (zh) |
DE (1) | DE112004000774T5 (zh) |
TW (1) | TW200428166A (zh) |
WO (1) | WO2004087773A1 (zh) |
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JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
JP2005003840A (ja) * | 2003-06-11 | 2005-01-06 | Clariant Internatl Ltd | 微細パターン形成材料および微細パターン形成方法 |
KR101076623B1 (ko) * | 2003-07-17 | 2011-10-27 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 |
JP4679997B2 (ja) * | 2004-08-31 | 2011-05-11 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成方法 |
US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR100876783B1 (ko) * | 2007-01-05 | 2009-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
KR101024712B1 (ko) * | 2007-12-20 | 2011-03-24 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
US8685627B2 (en) | 2007-12-20 | 2014-04-01 | Hynix Semiconductor Inc. | Method for manufacturing a semiconductor device |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4826840B2 (ja) | 2009-01-15 | 2011-11-30 | 信越化学工業株式会社 | パターン形成方法 |
JP4826846B2 (ja) | 2009-02-12 | 2011-11-30 | 信越化学工業株式会社 | パターン形成方法 |
TWI481969B (zh) | 2011-12-31 | 2015-04-21 | 羅門哈斯電子材料有限公司 | 光阻劑圖案修整方法 |
US8686109B2 (en) * | 2012-03-09 | 2014-04-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Methods and materials for removing metals in block copolymers |
CN105085722A (zh) * | 2015-08-12 | 2015-11-25 | 内蒙古蒙维科技有限公司 | 一种去除聚乙烯醇水溶液中杂质离子的方法 |
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2003
- 2003-03-28 JP JP2003090376A patent/JP4012480B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-18 CN CNB2004800077756A patent/CN1328295C/zh not_active Expired - Fee Related
- 2004-03-18 DE DE112004000774T patent/DE112004000774T5/de not_active Withdrawn
- 2004-03-18 WO PCT/JP2004/003650 patent/WO2004087773A1/ja active Application Filing
- 2004-03-18 KR KR1020057018341A patent/KR101059378B1/ko active IP Right Grant
- 2004-03-18 US US10/550,110 patent/US7598320B2/en not_active Expired - Fee Related
- 2004-03-26 TW TW093108220A patent/TW200428166A/zh unknown
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Also Published As
Publication number | Publication date |
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KR101059378B1 (ko) | 2011-08-26 |
WO2004087773A1 (ja) | 2004-10-14 |
JP4012480B2 (ja) | 2007-11-21 |
US7598320B2 (en) | 2009-10-06 |
DE112004000774T5 (de) | 2011-11-24 |
KR20050119664A (ko) | 2005-12-21 |
JP2004294992A (ja) | 2004-10-21 |
US20060211814A1 (en) | 2006-09-21 |
TW200428166A (en) | 2004-12-16 |
CN1764675A (zh) | 2006-04-26 |
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