KR101059378B1 - 미세 패턴 형성 보조제 및 이의 제조방법 - Google Patents
미세 패턴 형성 보조제 및 이의 제조방법 Download PDFInfo
- Publication number
- KR101059378B1 KR101059378B1 KR1020057018341A KR20057018341A KR101059378B1 KR 101059378 B1 KR101059378 B1 KR 101059378B1 KR 1020057018341 A KR1020057018341 A KR 1020057018341A KR 20057018341 A KR20057018341 A KR 20057018341A KR 101059378 B1 KR101059378 B1 KR 101059378B1
- Authority
- KR
- South Korea
- Prior art keywords
- polyvinyl alcohol
- water
- modified polyvinyl
- polymer
- molecular weight
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F16/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/28—Condensation with aldehydes or ketones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2810/00—Chemical modification of a polymer
- C08F2810/20—Chemical modification of a polymer leading to a crosslinking, either explicitly or inherently
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/44—Preparation of metal salts or ammonium salts
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
중합체 | 가열온도 (℃) |
가열시간 (분) |
고분자량체 성분량(ppm) |
여과성 평가 | |
실시예 1 | B | 100 | 180 | 100 이하 | ○ |
실시예 2 | C | 100 | 15 | 100 이하 | ○ |
실시예 3 | D | 80 | 180 | 300 | ○ |
비교실시예 1 | A | - | - | 2700 | × |
비교실시예 2 | E | 60 | 180 | 2400 | × |
중합체 | 고분자량체 성분량(ppm) |
도포 후의 결함수 (개/웨이퍼) |
현상 후의 결함수 (개/웨이퍼) |
|
실시예 4 | B | 100 이하 | 50 | 65 |
실시예 5 | C | 100 이하 | 55 | 72 |
실시예 6 | D | 300 | 75 | 84 |
비교실시예 3 | A | 2700 | 160 | 183 |
비교실시예 4 | E | 2400 | 112 | 146 |
|
보관 전 |
2주간 보관 후 | 1개월 보관 후 | ||
5℃ 보관 | 25℃ 보관 | 5℃ 보관 | 25℃ 보관 | ||
실시예 7 | 100 이하 | 100 | 200 | 200 | 200 |
비교실시예 5 | 100 이하 | 4000 | 5800 | 9900 | 10800 |
Claims (5)
- 보호기로 보호된 변성 폴리비닐 알콜, 수용성 가교제, 및 물 또는 물과 수용성 유기 용제와의 혼합 용매를 함유하는 미세 패턴 형성 보조제에 있어서, 상기 보호기로 보호된 변성 폴리비닐 알콜의, 겔 투과 크로마토그래피법으로 구하고 폴리에틸렌 글리콜 표준 물질로부터 계산한 중량 평균 분자량이 25만 이상인 고분자량체 성분량이, 당해 변성 폴리비닐 알콜 중 1000ppm 이하임을 특징으로 하는, 미세 패턴 형성 보조제.
- 제1항에 있어서, 상기 보호기로 보호된 변성 폴리비닐 알콜이, 산 부분과 금속 이온의 제거 처리가 이루어진 것임을 특징으로 하는, 미세 패턴 형성 보조제.
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003090376A JP4012480B2 (ja) | 2003-03-28 | 2003-03-28 | 微細パターン形成補助剤及びその製造法 |
JPJP-P-2003-00090376 | 2003-03-28 | ||
PCT/JP2004/003650 WO2004087773A1 (ja) | 2003-03-28 | 2004-03-18 | 微細パターン形成補助剤及びその製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050119664A KR20050119664A (ko) | 2005-12-21 |
KR101059378B1 true KR101059378B1 (ko) | 2011-08-26 |
Family
ID=33127261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057018341A KR101059378B1 (ko) | 2003-03-28 | 2004-03-18 | 미세 패턴 형성 보조제 및 이의 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7598320B2 (ko) |
JP (1) | JP4012480B2 (ko) |
KR (1) | KR101059378B1 (ko) |
CN (1) | CN1328295C (ko) |
DE (1) | DE112004000774T5 (ko) |
TW (1) | TW200428166A (ko) |
WO (1) | WO2004087773A1 (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
JP2005003840A (ja) * | 2003-06-11 | 2005-01-06 | Clariant Internatl Ltd | 微細パターン形成材料および微細パターン形成方法 |
KR101076623B1 (ko) * | 2003-07-17 | 2011-10-27 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 |
JP4679997B2 (ja) * | 2004-08-31 | 2011-05-11 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成方法 |
US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR100876783B1 (ko) * | 2007-01-05 | 2009-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
KR101024712B1 (ko) * | 2007-12-20 | 2011-03-24 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
US8685627B2 (en) | 2007-12-20 | 2014-04-01 | Hynix Semiconductor Inc. | Method for manufacturing a semiconductor device |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4826840B2 (ja) | 2009-01-15 | 2011-11-30 | 信越化学工業株式会社 | パターン形成方法 |
JP4826846B2 (ja) | 2009-02-12 | 2011-11-30 | 信越化学工業株式会社 | パターン形成方法 |
TWI481969B (zh) | 2011-12-31 | 2015-04-21 | 羅門哈斯電子材料有限公司 | 光阻劑圖案修整方法 |
US8686109B2 (en) * | 2012-03-09 | 2014-04-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Methods and materials for removing metals in block copolymers |
CN105085722A (zh) * | 2015-08-12 | 2015-11-25 | 内蒙古蒙维科技有限公司 | 一种去除聚乙烯醇水溶液中杂质离子的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51125155A (en) * | 1974-12-25 | 1976-11-01 | Kuraray Co Ltd | A process for preparing polyvinyl alcohol with a narrow distribution o f molecular weight |
JPS51125154A (en) * | 1974-12-25 | 1976-11-01 | Kuraray Co Ltd | A process for preparing polyvinyl alcohol with a limited distribution of molecular weight |
JPS6022145A (ja) * | 1983-07-18 | 1985-02-04 | Canon Inc | 画像形成法 |
JPH03200805A (ja) * | 1989-12-28 | 1991-09-02 | Sekisui Chem Co Ltd | 水溶性ポリビニルアセタールの精製方法 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3104205A (en) | 1959-12-17 | 1963-09-17 | Warner Lambert Pharmaceutical | Deodorant composition comprising the copper complex of the copolymer of allylamine and methacrylic acid |
US3666473A (en) | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
JPH0337974Y2 (ko) | 1985-04-16 | 1991-08-12 | ||
EP0250248B1 (en) | 1986-06-20 | 1997-11-05 | Minnesota Mining And Manufacturing Company | Block copolymer, method of making the same, diamine precursors of the same method, method of making such diamines and end products comprising the block copolymer |
JP2590342B2 (ja) | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
JPH0713094B2 (ja) * | 1987-05-09 | 1995-02-15 | 日本合成化学工業株式会社 | 超低分子量ポリビニルアルコ−ルの製造法 |
US4823345A (en) | 1987-06-15 | 1989-04-18 | International Business Machines Corp. | Method and apparatus for communication network alert record identification |
US4873176A (en) | 1987-08-28 | 1989-10-10 | Shipley Company Inc. | Reticulation resistant photoresist coating |
JPH01221750A (ja) | 1988-02-29 | 1989-09-05 | Hoya Corp | パターン形成又は修正方法 |
JPH0825861B2 (ja) | 1989-04-24 | 1996-03-13 | サンスター株式会社 | 歯磨組成物 |
JP3008212B2 (ja) | 1990-11-26 | 2000-02-14 | 花王株式会社 | 透明ないし半透明の化粧料 |
JP3000745B2 (ja) | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
JP3057879B2 (ja) | 1992-02-28 | 2000-07-04 | 株式会社日立製作所 | 半導体装置の製造方法 |
JP3219165B2 (ja) | 1992-08-31 | 2001-10-15 | ティーディーケイ株式会社 | 金属膜パターン形成方法 |
JP3340493B2 (ja) | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
FI96149C (fi) * | 1994-05-25 | 1996-05-10 | Seppo Metsaelae | Hienomekaaninen säätölaite |
US6080707A (en) | 1995-02-15 | 2000-06-27 | The Procter & Gamble Company | Crystalline hydroxy waxes as oil in water stabilizers for skin cleansing liquid composition |
US5882494A (en) | 1995-03-27 | 1999-03-16 | Minimed, Inc. | Polyurethane/polyurea compositions containing silicone for biosensor membranes |
JP3917181B2 (ja) | 1995-04-25 | 2007-05-23 | スリーエム カンパニー | ポリジオルガノシロキサンポリ尿素セグメントコポリマーおよびその生成方法 |
US5547812A (en) | 1995-06-05 | 1996-08-20 | International Business Machines Corporation | Composition for eliminating microbridging in chemically amplified photoresists comprising a polymer blend of a poly(hydroxystyrene) and a copolymer made of hydroxystyrene and an acrylic monomer |
US5820491A (en) | 1996-02-07 | 1998-10-13 | Ppg Industries, Inc. | Abrasion resistant urethane topcoat |
JP3494261B2 (ja) | 1996-02-29 | 2004-02-09 | 日東紡績株式会社 | N−アリルウレタン系重合体およびその製造方法 |
KR100536824B1 (ko) | 1996-03-07 | 2006-03-09 | 스미토모 베이클라이트 가부시키가이샤 | 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물 |
JPH09244262A (ja) | 1996-03-12 | 1997-09-19 | Nippon Zeon Co Ltd | 感光性印刷版用水性現像液 |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US6441118B2 (en) | 1996-04-25 | 2002-08-27 | 3M Innovative Properties Company | Polydiorganosiloxane oligourea segmented copolymers and a process for making same |
AU6909396A (en) | 1996-04-25 | 1997-11-12 | Minnesota Mining And Manufacturing Company | Silicone compositions containing a silicone-urea segmented copolymer |
JPH09325502A (ja) | 1996-06-05 | 1997-12-16 | Nippon Paint Co Ltd | 感光性樹脂組成物の現像方法 |
JP3071401B2 (ja) | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置 |
TW329539B (en) | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
US5955408A (en) | 1996-07-10 | 1999-09-21 | Steris Inc. | Triclosan skin wash with enhanced efficacy |
JPH10120968A (ja) | 1996-08-28 | 1998-05-12 | Hitachi Chem Co Ltd | レジスト保護膜用樹脂組成物、レジスト保護膜及びこれを用いたパターン製造法 |
US6727034B1 (en) | 1996-10-02 | 2004-04-27 | Sanyo Chemical Industries, Ltd. | Photosensitive composition and use thereof |
JP3822688B2 (ja) | 1996-12-02 | 2006-09-20 | 積水化学工業株式会社 | ポリビニルアセタール樹脂の製造方法 |
US5863707A (en) | 1997-02-11 | 1999-01-26 | Advanced Micro Devices, Inc. | Method for producing ultra-fine interconnection features |
TW372337B (en) | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
JPH10338713A (ja) * | 1997-06-09 | 1998-12-22 | Sekisui Chem Co Ltd | ポリビニルアセタール系樹脂の製造方法及び該製造方法で得られたポリビニルアセタール系樹脂 |
TW526390B (en) | 1997-06-26 | 2003-04-01 | Shinetsu Chemical Co | Resist compositions |
JPH1138642A (ja) | 1997-07-17 | 1999-02-12 | Hitachi Chem Co Ltd | 感光性永久マスクパターンの製造法及び現像液 |
JP3189773B2 (ja) | 1998-01-09 | 2001-07-16 | 三菱電機株式会社 | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 |
US6180244B1 (en) | 1998-02-17 | 2001-01-30 | 3M Innovative Properties Company | Waterbased thermoforming adhesives |
JP3924910B2 (ja) | 1998-03-31 | 2007-06-06 | 三菱電機株式会社 | 半導体装置の製造方法 |
TW457277B (en) | 1998-05-11 | 2001-10-01 | Shinetsu Chemical Co | Ester compounds, polymers, resist composition and patterning process |
JP3950584B2 (ja) * | 1999-06-29 | 2007-08-01 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物 |
JP4275820B2 (ja) * | 1999-09-20 | 2009-06-10 | 積水化学工業株式会社 | ポリビニルアセタール樹脂の製造方法 |
JP2001109165A (ja) | 1999-10-05 | 2001-04-20 | Clariant (Japan) Kk | パターン形成方法 |
JP2001228616A (ja) | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | 微細パターン形成材料及びこれを用いた半導体装置の製造方法 |
CN1210623C (zh) | 2000-04-04 | 2005-07-13 | 住友化学工业株式会社 | 化学放大型正光刻胶组合物 |
JP2001304841A (ja) | 2000-04-26 | 2001-10-31 | Sumitomo Chem Co Ltd | レジストパターンの寸法測定方法 |
KR20030076228A (ko) | 2000-06-21 | 2003-09-26 | 아사히 가라스 가부시키가이샤 | 레지스트 조성물 |
JP4412440B2 (ja) | 2000-07-07 | 2010-02-10 | 信越化学工業株式会社 | 微細パターン形成材料並びにこれを用いた微細めっきパターン形成方法および半導体装置の製造方法 |
US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
JP2002049161A (ja) | 2000-08-04 | 2002-02-15 | Clariant (Japan) Kk | 被覆層現像用界面活性剤水溶液 |
US6365332B1 (en) | 2000-09-07 | 2002-04-02 | Eastman Kodak Company | Photographic bleaching compositions and method of processing color reversal elements |
JP3800538B2 (ja) | 2001-02-09 | 2006-07-26 | 旭硝子株式会社 | レジスト組成物 |
DE10209024A1 (de) | 2001-03-07 | 2002-09-19 | Inctec Inc | Photoempfindliche Zusammensetzungen |
DE10113980A1 (de) | 2001-03-22 | 2002-10-02 | Consortium Elektrochem Ind | Silanterminiertes Polydiorganosiloxan-Urethan-Copolymer |
US20030008968A1 (en) | 2001-07-05 | 2003-01-09 | Yoshiki Sugeta | Method for reducing pattern dimension in photoresist layer |
DE10137855A1 (de) | 2001-08-02 | 2003-02-27 | Consortium Elektrochem Ind | Organopolysiloxan/Polyharnstoff/ Polyurethan-Blockcopolymere |
DE10141235A1 (de) | 2001-08-23 | 2003-03-27 | Consortium Elektrochem Ind | Feuchtigkeitsvernetzende elastische Zusammensetzung |
JP4237430B2 (ja) | 2001-09-13 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | エッチング方法及びエッチング保護層形成用組成物 |
JP2003140363A (ja) | 2001-10-31 | 2003-05-14 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
US20030102285A1 (en) | 2001-11-27 | 2003-06-05 | Koji Nozaki | Resist pattern thickening material, resist pattern and forming method thereof, and semiconductor device and manufacturing method thereof |
US20030129538A1 (en) | 2002-01-09 | 2003-07-10 | Macronix International Co., Ltd. | Method for eliminating corner round profile of the RELACS process |
JP3850772B2 (ja) | 2002-08-21 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
JP4235466B2 (ja) | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
JP2005003840A (ja) | 2003-06-11 | 2005-01-06 | Clariant Internatl Ltd | 微細パターン形成材料および微細パターン形成方法 |
KR101076623B1 (ko) | 2003-07-17 | 2011-10-27 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 |
JP4485241B2 (ja) | 2004-04-09 | 2010-06-16 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物およびそれを用いたパターン形成方法 |
EP1766888A1 (en) * | 2004-07-15 | 2007-03-28 | Nokia Corporation | In-band set-up and configuration of transfer-related resources |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
-
2003
- 2003-03-28 JP JP2003090376A patent/JP4012480B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-18 CN CNB2004800077756A patent/CN1328295C/zh not_active Expired - Fee Related
- 2004-03-18 DE DE112004000774T patent/DE112004000774T5/de not_active Withdrawn
- 2004-03-18 WO PCT/JP2004/003650 patent/WO2004087773A1/ja active Application Filing
- 2004-03-18 KR KR1020057018341A patent/KR101059378B1/ko active IP Right Grant
- 2004-03-18 US US10/550,110 patent/US7598320B2/en not_active Expired - Fee Related
- 2004-03-26 TW TW093108220A patent/TW200428166A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51125155A (en) * | 1974-12-25 | 1976-11-01 | Kuraray Co Ltd | A process for preparing polyvinyl alcohol with a narrow distribution o f molecular weight |
JPS51125154A (en) * | 1974-12-25 | 1976-11-01 | Kuraray Co Ltd | A process for preparing polyvinyl alcohol with a limited distribution of molecular weight |
JPS6022145A (ja) * | 1983-07-18 | 1985-02-04 | Canon Inc | 画像形成法 |
JPH03200805A (ja) * | 1989-12-28 | 1991-09-02 | Sekisui Chem Co Ltd | 水溶性ポリビニルアセタールの精製方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2004087773A1 (ja) | 2004-10-14 |
JP4012480B2 (ja) | 2007-11-21 |
US7598320B2 (en) | 2009-10-06 |
DE112004000774T5 (de) | 2011-11-24 |
KR20050119664A (ko) | 2005-12-21 |
JP2004294992A (ja) | 2004-10-21 |
US20060211814A1 (en) | 2006-09-21 |
CN1328295C (zh) | 2007-07-25 |
TW200428166A (en) | 2004-12-16 |
CN1764675A (zh) | 2006-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101059378B1 (ko) | 미세 패턴 형성 보조제 및 이의 제조방법 | |
KR100707838B1 (ko) | 수용성 수지 조성물 및 이로 이루어진 미세 패턴 형성 재료 | |
EP1046958B1 (en) | Use of a composition for bottom reflection preventive film | |
EP2158277B1 (en) | Aqueous composition comprising lactam for coating over a photoresist pattern | |
EP1791028A1 (en) | Micro pattern forming material, method of forming micro resist pattern and electronic device | |
EP2088470B1 (en) | Method for formation of miniaturized pattern | |
KR20060080173A (ko) | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 | |
CN100385622C (zh) | 精细图形的形成方法 | |
CN1799006B (zh) | 微细图形形成材料以及微细图形形成方法 | |
EP0854850B1 (en) | Low metal ion containing 4,4'-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol and photoresist compositions therefrom | |
JP4610578B2 (ja) | 微細パターン形成補助剤 | |
KR100424522B1 (ko) | 광활성화합물 | |
JP3789138B2 (ja) | 有機極性溶媒を含有するフォトレジスト組成物中の混入金属イオンをイオン交換により低減する方法 | |
EP2088469A1 (en) | Solution for treatment of resist substrate after development processing, and method for treatment of resist substrate using the same | |
KR100567641B1 (ko) | 아미노방향족발색단의금속이온함량을감소시키는방법및이를금속함량이낮은포토레지스트용저부반사방지피복물의합성에사용하는방법 | |
EP0416873A2 (en) | Transparent dissolution rate modifiers for photoresists |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140730 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150630 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160721 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170720 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180801 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190730 Year of fee payment: 9 |