CN1263206C - 氮化物半导体激光元件及其制造方法 - Google Patents
氮化物半导体激光元件及其制造方法 Download PDFInfo
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- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Abstract
一种氮化物半导体激光元件及其制造方法,该具有高输出型谐振器端面的氮化物半导体激光元件,在n型氮化物半导体层和p型氮化物半导体层之间具有包括由含In的氮化物半导体构成的活性层的谐振器,并且,在所述激光元件的相对向的谐振器端面的至少放射端面上形成以不损伤活性层的低温形成的由单结晶AlXGa1-XN(0≤X≤1)构成的保护膜。
Description
技术领域
本发明是关于在谐振器端面上形成由单结晶AlXGa1-XN(0≤X≤1)构成的端面膜的氮化物半导体激光元件及其制造方法。
背景技术
以前被广泛使用的应用GaAs类的半导体的半导体激光元件,通过在其谐振器端面上形成保护膜的窗型结构,可使激光元件长寿命化。即使是氮化物半导体激光元件,因为氮化物半导体通过RIE(反应性离子蚀刻)和开裂形成的谐振器端面上的禁带宽度(hand gap)能量小,所以在端面上产生射出光的吸收,由该吸收在端面上产生热,要实现100mW以上的高输出激光的话就会有寿命特性的问题。这是因为:提出形成氮化物半导体激光元件的窗型结构,作为保护膜,提出形成AlGaInN半导体膜的方法(专利公开平7-249830),形成A1N等的保护膜的方法(专利公开2002-26442)。
不过,为了由单结晶通过气相生长法形成上述中的保护膜需要1000℃以上的生长温度,在所需的生长温度下含有In的活性层受到损伤。因此,要使该保护膜在不损伤活性层的温度下形成的话,保护膜就是非结晶的。在将这个非结晶的保护膜应用在半导体激光元件的窗型结构上时,因为不是单结晶,产生反射光散射,激光束形状不均匀,并且,还会有因为非结晶具有颜色而产生光吸收,在端面产生发热引起端面恶化的问题。
发明内容
为此,本发明为解决上述问题,其目的是提供一种氮化物半导体激光元件,在不使活性层受到损伤的低温下且由不产生上述问题的单结晶AlXGa1-XN(0≤X≤1)构成的端面膜。
本发明的氮化物半导体激光元件,在n型氮化物半导体层和p型氮化物半导体层之间具有包括由含In的氮化物半导体构成的活性层的谐振器,其特征在于:在所述激光元件的相对向的谐振器端面的至少放射端面上,以不损伤所述活性层的低温形成与活性层相比禁带宽度能量大的单结晶AlXGa1-XN(0≤X≤1)构成的端面膜。
这里所谓不损伤由含In氮化物半导体构成的活性层的低温,是指由含In的氮化物半导体构成的活性层的形成温度以下的温度。因为由含In的氮化物半导体构成的活性层温度是在通常生长温度900℃生长的,因此,若是在其生长温度以下的温度的话,上述活性层等就不会因分解等受到损伤。因此,端面膜的生长温度在900℃以下,优选600℃以下,最好是500℃以下。
并且,在关于本发明的氮化物半导体激光元件上,所谓包括由含In的氮化物半导体构成的活性层的谐振器是指光导波区域,通常由活性层和光导层构成。因此,在本发明的端面膜形成只要至少覆盖所述谐振器端面区域即可。所述活性层是由至少一个InGaN阱层或InAlGaN阱层,单个或多重量子阱结构构成。
本发明的端面膜是由单结晶AlXGa1-XN(0≤X≤1)构成。该混晶比率是由与端面膜的功能的关系决定的。也就是说,活性层的放射端面的禁带宽度能量由于在放射端面形成时进行蚀刻和开裂而变狭窄,所以能够由端面膜使该端面的禁带宽度能量扩大到不进行光吸收的禁带宽度能量来决定混晶比。考虑端面膜的结晶性,Al混晶比为0.3以下,最好是0.15以下。在关于本发明的氮化物半导体激光元件上,所述端面膜的膜厚希望为50以上,但为保证端面膜的均匀性,希望是在1微米以下,优选2000。
在本发明中,为使所述单结晶的AlXGa1-XN(0≤X≤1)在所述低温下形成而适用AMMONO法。是在氨的超临界状态下,将AlXGa1-XN(0≤X≤1)单结晶层形成在所定的晶种面(本发明是激光元件的谐振器端面)上的方法,通过采用AMMONO法所述单结晶端面膜能够在900℃以下,优选600℃以下,最好500℃以下形成单结晶端面膜。采用AMMONO法后,受通常高压釜组成的影响,有时所述端面膜含有从Ni、Cr、Co、Ti、Fe、Al、Si、Mn构成的群中选择出的至少一种。并且,所述端面膜作为AMMONO法的特征,含有作为矿化剂使用的族编号1(IUPAC.1989)Li、K、Na或Cs元素中的至少一种。所述端面膜因为不吸收从所述氮化物半导激光元件的反射光,故没有放射端面的热吸收,即使是在100mW以上的氮化物半导体激光元件中也可以抑制COD的产生。
并且,所述氮化物半导激光元件,形成在从GaN基板、蓝宝石基板、尖晶石基板、ZnO基板、SiC基板、在其他上蓝宝石基板等的不同类基板上由GaN的横向生长形成的ELO生长基板、使表面具有凹凸的氮化物半导体生长的基板所构成的群体选出的基板上。这里,所谓ELO(Epitaxial-Lateral-Overgrowth)基板是利用GaN的横方向生长的基板,是降低转位缺陷的基板。在超临界氨中使AlXGa1-XN(0≤X≤1)作为端面膜生长的本发明中希望是GaN基板。这是因为:在使用和端面膜不同构成的不同种类基板的氮化物半导体激光元件的情况时,要极力避免混入到端面膜的形成中溶解于超临界氨中再结晶的端面膜的半导体中而不纯物的情况。所述GaN基板是在超临界氨中生长的GaN基板等。在和氮化物半导体不同的基板上生长的氮化物半导体激光元件在器件工序中进行开裂是困难的。这是因为将GaN生长的不同种类的基板没有开裂性。不过,因为GaN基板具有开裂性,所以在谐振器端面形成时,可以利用优良地得到镜面的开裂形成端面。并且,因为同质外延生长,可以在生长所述激光元件后抑制基板的翘曲。由此,不会产生裂缝。还有,所述GaN基板一般形成激光元件的生长面是C面。得到由气相生长法得到的GaN基板。由AMMONO法,在超临界氨中使GaN的块状单结晶在C轴方向以厚度2.5cm生长后,若切削就可得到φ1英寸以上的以A面或M面为主面的GaN基板。因为A面或M面没有极性(non-polar),所以对活性层不产生分极作用。除此之外通过将(00-1)面为主面的GaN基板极性置换,能够将C面(0-001)面作为主面。
所述氮化物半导体激光元件形成在GaN基板上的C面上后,所述端面膜形成在M或A面上,能够成为没有极性的端面膜。当所述氮化物半导体激光元件形成在超临界氨中生长的GaN基板上的A面上时,对激光元件的活性层没有分极作用,并且谐振器反射面成为M面,在M面上形成M面端面膜,对开裂有益。当所述氮化物半导体激光元件形成在超临界氨中生长的GaN基板上的M面上时,对活性层没有分极作用,并且在谐振器反射面上形成没有极性的A面端面膜。
本发明,提供氮化物半导体激光元件的制造方法,其特征是,在n型氮化物半导体层和p型氮化物半导体层之间具有包括含In的氮化物半导体构成的活性层的谐振器,并且该制造方法包括:所述在激光元件上进行蚀刻或开裂形成相对向的谐振器端面的第1工序,和在所述激光元件的相对向的谐振器的至少放射端面上,形成由以不损伤所述活性层的低温形成的单结晶AlXGa1-XN(0≤X≤1)构成的端面膜的所述第2工序。
所述第2工序,通过在超临界氨中形成所述端面膜,能够在不对活性层有损伤的低温下形成单结晶AlXGa1-XN(0≤X≤1)。
在所述第2工序中,其特征是:至少在谐振器的p型接触层的上表面形成相对于超临界氨溶解度与端面膜组成同等或低的掩膜后,形成所述端面膜。通过形成该掩膜而可以抑制在溶解性强的超临界氨中在氮化物半导体激光元件的端面形成时激光元件谐振器从p型接触型层的上表面和端面的角溶解。所述掩膜可以从氧化硅、氮化硅、氮化铝、钼、钨等群中选择。因为这些掩膜材料在超临界氨中比GaN稳定,在用该掩膜覆盖区域的接触层表面上能够抑制溶解。掩膜在后工序脊形成时容易去除。
在所述氮化物半导体激光元件的制造方法上,所述端面膜在超临界氨中的成膜温度为100℃以上900℃以下。因为氮物半导体激光元件是含有InGaN的量子阱结构,所以如果以比900℃高的温度在活性层上进行层生长的话,该活性层可能会分解。利用本发明,能够在900℃以下最好是600℃以下的温度下使端面膜生长。
附图说明
图1是关于本发明的氮化物半导体激光元件的端面剖视图。
图2A-2D是表示在两端面上无掩膜地形成端面膜的制造工序的剖视图。
图3A-3E是表示关于本发明实施形式的氮化物半导体激光元件端面膜的制造工序的剖视图。
图4是在基板上形成保护膜、适用本发明情况的实施形式的晶片的剖视图。
图5A-5E是通过开裂的氮化物半导体激光元件的制造方法中,适用于本发明情况的工序说明图。
具体实施方式
下面,对关于本发明的实施形式进行说明。
图1是有关于本发明的半导体激光的剖视图,在蓝宝石基板1上,n型氮化物半导体层2和p型氮化物半导体层4进行层叠,其之间形成有由含In的氮化物半导体构成的单一或多重量子阱结构的活性层3。因此,在从近紫外光到可视光绿色的波长区域(370nm以上550nm以下)获得发光效率优良的激光元件。N型氮化物半导体层2由n-接触层21、裂纹防止层22、n型覆盖层23及n型光导层24构成。并且,所述裂纹防止层22在使用GaN基板的情况下,为了抑制晶片的翘曲可以省略。P型氮化物半导体层4由罩层41、p型光导层42、p型覆盖层43、p接触层44构成。这里,在所述蓝宝石基板1上通过以降低移位缺陷层的ELO层或以降低凹痕为目的的AlGaN层可以形成n-接触层21。在所述上述实施形式中,半导体激光元件的谐振器是由所述活性层3和p型层及n型层的光导层24、42或罩层41构成的。在谐振器端面的放射端面上形成由单结晶AlXGa1-XN(0≤X≤1)构成的端面膜5(参照图2A~D、3)。如图2A~D所示,该端面膜也可以在谐振器端面的光反射侧上形成,能够抑制由反射光产生的端面恶化。
下面,说明关于本实施形式的氮化物半导体激光元件的代表性3个制造方法。
图2A~D表示不形成掩膜、在谐振器两端面上设置端面膜的工序。
图3A~E是在谐振器的放射端面侧以外设置掩膜,在放射端面上形成端面膜的工序。
图5A~E是将谐振器的放射端面作为M面,形成脊、电极后由开裂形成放射端面。接着,在其端面侧以外设置掩膜,在放射端面上形成M面端面膜,其后由开裂等薄片化形成激光元件的工序。
在图2所示的第1方法上,是准备首先在蓝宝石基板1上形成以700℃以下的低温生长的缓冲层11,在其缓冲层11上依次生长n型氮化物半导体层2、活性层3及p型氮化物半导体层4的晶片(图2A)。这里,能够在低缓冲层11上通过ELO层生长n型氮化物半导体层2,降低缺陷。
接着,将所述晶片通过蚀刻使谐振器端面及n-接触层21露出(图2B)。其后,在露出谐振器端面的晶片上采用AMMONO法形成端面膜5。
在高压釜内与成为端面膜原料的原料、成为反应催化剂的矿化剂一起设置晶片,投入氨,通过所定的温度控制达到超临界状态。
所述晶片是采用在蓝宝石基板1上依次生长n型氮化物半导体层2、活性层3及p型氮化物半导体层4的晶片,但取代之也可以使用:除去像蓝宝石这样的不同种类基板的晶片;在基板1上依次生长n型氮化物半导体层、活性层3及p型氮化物半导体层4,用无论是否溶解在超临界氨中均不混入端面膜中的材料如Ag等掩蔽6谐振器端面的只反射光一侧构成的晶片;用所述Ag等掩蔽6谐振器端面的放射端面以外的所有面构成的晶片;只掩蔽所述基板的晶片(图4)。
如果在所述超临界氨中GaN的溶解度也高,并不在p型氮化物半导体层4的表面上形成掩膜的话,氮化物半导体层从最表面和放射端面之间的角部溶解。因此,掩蔽p型氮化物半导体层4的最表面的p型接触层。该掩膜材料可以从氮化硅、氮化硅、氮化铝、钼、钨中选择。因为这些掩膜材料在超临界氨中比GaN稳定,所以能够抑制GaN的溶解。因此就意味着若在p型接触层上形成掩膜则可抑制p型接触层和放射端面之间的角部溶解。并且,最好在形成端面膜后的工序上容易除去。该掩膜的膜厚为1μm以上。
上述晶片在高压釜内反应后的晶片在氮化物半导体层的露出面上形成由单结晶AlXGa1-XN(0≤X≤1)构成的端面膜(图2C)。
接着,去除p型半导体层4上的端面膜,在放射端面上形成上述保护膜、在相反侧上形成反射膜,在沟槽部切除得到激光元件。这里,上述保护膜和反射膜可以是同一材料,由具有保护作用和反射作用的SiO2、TiO2或它们的多层膜形成。
在如图3所示的第2方法中,首先,准备在GaN基板1的C面上将n型氮化物半导体层2也就是n-接触层21、裂纹防止层22、n型覆盖层23及n型光导层24、其次,活性层3、p型氮化物半导体层4也就是罩层41、p型光导层42、p型裂纹防止层43、p接触层44顺序生长的晶片(图3A)。这里,因为使用GaN基板,所以不是如第1方法那样在低温缓冲层11上通过ELO层使n型氮化物半导体层2生长,能够降低外延层的缺陷。
接着,将所述晶片由蚀刻露出谐振器及n-接触层21,除了谐振器端面的反射面侧外形成掩膜7(图3B)。然后,在露出谐振器端面的晶片上采用AMMONO法形成端面膜5(图3C)。
接着,形成端面膜后,除去掩膜7,由通常的器件工序形成脊(图3D)。进行光导波的脊形带(ridge stripe)是在谐振器方向上形成的。脊的幅宽为1.0-20μm,脊的深度达到p型覆盖层或p型光导层。然后以覆盖脊的方式,形成由ZrO2膜构成的嵌入层70。为接触脊上部的p型接触层43形成p欧姆电极80。所述脊数不仅可以是单数,也可以复数形成成为多带型激光元件。接着,在n型接触层21的表面上与p型电极平行形成n电极90。接着,形成p-平头电极110(pad electrode)、及n-平头电极120。并且,通过交替形成SiO2和TiO2的图形,而以覆盖除p电极及n电极上方的整个元件的方式将SiO2/TiO2绝缘膜作为激光发振的反射膜100发挥功能。最后,从晶片上通过划线,分割各个氮化物半导体激光元件。能够制作如上所述的氮化物半导体激光元件(图3E、图1)。
并且,也可以在所述端面膜上设置为有效进行谐振的保护膜。该保护膜是与端面膜AlGaN具有折射率差的。具体的是Nb、Ni、Cr、Ti、Cu、Fe、Zr、Hf、W、Rh、Ru、Mg、Al、Sc、Y、Mo、Ta、Co、Pd、Ag、Au、Pt、Ga,还有它们的氧化物、氮化物、氟化物等化合物。
图5A~E作为第3方法,表示:作为基板使用GaN基板1的A面,将放射端面作为M面由开裂得到激光元件的工序。在这个GaN基板上和第2方法相同形成氮化物半导体激光元件。在同一部件上对于同一序号省略说明。接着,通过蚀刻露出n型接触层21(图5A)。其后,形成脊(图5B)、进一步形成与脊的最上部的p型接触层43接触的p欧姆电极80。接着,在n型接触层21的表面上形成n电极90。接着,形成p-平头电极110、n-平头电极120(图5C)。接着,通过开裂形成放射端面。因此,晶片形成为棱状。其后,在超临界氨中形成端面膜5(图5D)。能够将其开裂制作激光元件(图5E)。
作为使用超临界氨的AMMONO法,是利用在超临界状态的氨中氮化镓系化合物表现的负溶解度曲线的氮化物半导体的生长方法,在波兰申请(P-347918号及P-350375号)及PCT申请(PCT/IB02/04185)详细记载,普通技术人员能够参照以下简要说明及实施例容易地实施本案发明。
关于所需的方法,简要说,所谓上述的负溶解度曲线是指在反应系内在高温区域氮化物半导体的溶解度低、在低温区域氮化物半导体的溶解度高的意思,在高压釜中形成高温区域和低温区域将其温度差进行适当控制,在低温区域产生氮化物溶解的同时,在高温区域发生氮化物的再结晶,通过将从低温区域到高温区域进行对流,在高温区域将氮化物维持在一定的浓度,也可以使氮化物有选择地在晶种上生长。
因此,上述晶片在上述高压釜反应系内配置在高温区域,原料配置在低温区域。因此,首先,低温区域的原料溶解,形成过饱和状态。接着,在反应系内产生对流,溶解的原料流向高温区域。因为这个高温区域溶解度低,溶解的原料在作为晶粒在作为晶种的晶片上再结晶。通过这个再结晶,本发明形成端面膜。并且,这种方法的特征是,不是在像氮化物半导体的气相生长那样的900℃以上生长氮化物半导体,而是在900℃以下,优选600℃以下,更优选是500℃的低温下生长氮化物半导体,因此,不会使配置在高温区域的晶片含In的活性层因受热而分解。
在所述原料中因单结晶层的组成不同而不同,端面膜用GaN形成的情况下通常是使用GaN单结晶或多结晶,或者使用GaN的前驱体和Ga金属,一旦形成GaN单结晶或多结晶,能够使其再结晶。GaN能够使用由HVPE法或MOCVD法的气相生长法形成的和由AMMONO法、溶化法、或高压法形成的。GaN的前驱体上能够使用迭氮化镓、亚氨化镓、氨化镓或它们的混合物。
AlN的情况和GaN同样,使用AlN单结晶或多结晶,或者使用AlN的前驱体或Al金属,一旦形成AlN单结晶或多结晶,并使其再结晶。
AlGaN的情况,因为是AlN和GaN的共晶,使两者原料适宜混合使用,但使用金属和单结晶或多结晶(如Al金属和GaN单结晶或多结晶),希望可以通过将矿化剂2种以上使用来得到所定的构成。
在所述矿化剂上可以使用碱金属(Li、Na、K、Cs)或者碱金属配位化合物(酰氨化碱金属、亚酰氨化碱金属)。这里,所述碱金属与氨的摩尔比为1∶200~1∶20,优选使用Li。因为Li是溶解度低的矿化剂,所以,能够抑制露出的端面溶解,并且,在形成50以上、1μm以下的厚度的保护膜的情况好。
所述高压釜主要是由Ni、Cr、Co构成的合金构成的,此外含有Ti、Fe、Al、Si、Mn等。
这里,由单结晶AlxGa1-xN构成的端面膜5的膜厚优选在50以上。这是因为该膜厚比50A薄且使蚀刻端面平坦化的效果变小。并且,作为膜厚的上限,只要是普通技术人员可以实施的膜厚即可。并且,在本发明中,端面膜是在带(stripe)的侧面和端面及n型接触层21的表面上生长的,但是至少是在n型接触层21的表面上生长的膜,最好是以不嵌埋带的活性层的方式在1μm以下中止生长。
并且,在端面膜5上为了效果的平坦化而优选降低Al的混晶。不过,要提高如本发明中的阱结构的效果可使Al尽量少混晶。这是因为Al混晶即使为零也可以,端面膜5是AlXGa1-XN,优选0≤X≤0.3,最好是0≤X≤0.15。
并且,在使蚀刻后的带的侧面和端面上生长端面层后,能够使带的侧面和端面成为接近镜面状态的面。也就是说,在刚刚蚀刻后,带的侧面和端面是凹凸比较多的面,通过端面膜的生长,其凹凸消除成为平滑面。并且,端面膜可以是单一膜,也可以是由Al构成的不同的多个层构成的多层膜。
以下说明关于本发明的实施例。
并且,本发明并不限定于以下的实施例。
实施例1
首先将以2英寸直径、C面为主面的蓝宝石基板1设置在MOCVD反应容器内,将温度控制在510℃,作为载体气体使用氢、作为原料气体使用氨和TMG(三甲基镓),在蓝宝石基板将由GaN构成的低温生长的缓冲层11成形为200的膜厚。
缓冲层生长后
(1)作为n型接触层将掺质Si为3×1018/cm3的GaN成形为4μm。
(2)作为n型裂纹防止层,将无掺质的In0.06Ga0.49N成形为1.5μm。
(3)作为n型覆盖层,将无掺质的Al0.1Ga0.9N25、和掺质Si为1×1019/cm3n型GaN交替反复层叠成为总膜厚为1.2μm的超晶格。
(4)作为n光导层将无掺质GaN成形为0.2μm。
(5)作为活性层,将由掺质Si的In0.005Ga0.95N构成的阻挡层100和无掺质In0.1Ga0.9N构成的阱层40交替层叠,成为由阻挡层/阱层/阻挡层/阱层/阻挡层构成的总膜厚380的量子阱层。
(6)作为p型覆盖层将掺质Mg为1×1020/cm3的p型Al0.3Ga0.7N形成为300。
(7)作为p型光导层将无掺质的GaN层成形为0.2μm
(8)作为p型覆盖层将无掺质的Al0.16Ga0.84N25和无掺质的GaNA25交替层叠形成总膜厚为0.6μm的超晶格层
(9)作为p型接触层将掺质Mg为1×1020/cm3的p型GaN层依次层叠为150。
层叠后,将MOCVD反应装置内充入氮气气氛,在700℃下将晶片进行退火,使p型氮化物半导体层更加低阻抗化。
退火后,将晶片从反应容器中取出,在最上层的p型接触层表面上形成由带状的SiO2构成的保护膜(掩膜),由RIE进行蚀刻形成带,使谐振器端面及n型接触层的表面露出。p型接触层表面上形成的SiO2的保护膜(掩膜)通过湿式蚀刻除去。
接着,将晶片配置在***内为超临界氨的反应容器(高压釜)内。在高压釜(36cm3)内,除晶片外作为原料准备GaN为0.5g,氨为14.7g,并且作为矿化剂准备Li为0.036g,进行密闭。该高压釜内的温度为500℃以下,形成高温区域和低温区域。在550℃的高温区域中配置晶片,在450℃的低温区域上配置原料的GaN、Ga金属。将该高压釜内以密闭状态放置3天。
通过以上,以低温条件在超临界氨中使由单结晶GaN构成的端面膜以100的膜厚,生长在带的端面和侧面及露出的n型接触层的表面、p型接触层的表面上。
接着,形成由单结晶GaN构成的端面膜后,将最上层的p型接触层上表面形成的单结晶GaN蚀刻除去后,在该p型接触层上表面形成1.5μm的带状的SiO2掩膜,到p型覆盖层的中途通过蚀刻在带部再形成脊。该蚀刻的进行使得蚀刻后脊两侧的p型覆盖层的膜厚为0.1μm。
以上形成的是幅宽为1.5μ的脊部。
接着,采用溅射从SiO2掩膜上覆盖带部的上表面地形成膜厚为0.5μm的ZrO2膜。
热处理后,在带部的上表面,在脊部的侧面及脊部两侧的p型覆盖层的表面上形成由ZrO2膜构成的嵌入层70。通过该ZrO2膜能够使激光发振时的横向状态稳定。
接着,在p型接触层上欧姆接触地形成由Ni/Au构成的p电极80,在n型接触层上形成由Ti/Al构成的n电极90。接着,将晶片在600℃下进行热处理。其后,在p、n电极上分别形成由Ni(1000)-Ti(1000)-Au(8000)构成的平头电极。并且,在形成由SiO2和TiO2构成的反射膜100后,最后,由晶片通过划线,分割各个氮化物半导体元件。
在由以上所述得到的氮化物半导体元件上分别设置散热器,进行激光发振,希望通过COD级别的提高,阈值为2.0KA/cm2、100mW,优选在200mW输出的发振波长405nm的连续发振时间提高。
实施例2
在实施例1中,只在带部一侧的放射端面上,生长由单结晶GaN构成的端面膜,其膜厚1μm,其他点与实施例1同样,制作氮化物半导体元件。
在由以所得到的激光元件上分别设置散热器,在激光发振时,与实施例1同样,期待阈值2.0KA/cm2、100mW输出的发振波长405nm的连续发振寿命的延长。
实施例3
在实施例1上,在蓝宝石基板上形成缓冲层后,通过HVPE法形成膜厚为100μm的GaN。其后,和实施例同样,形成n型氮化物半导体层、活性层、p型氮化物半导体层,除去蓝宝石基板成为单体GaN基板。其他点和实施例1相同,形成谐振器端面,其后在超临界氨中使单结晶GaN以100的膜厚形成端面膜。
制作的氮化物半导体激光元件能够期待和实施例1相同的效果。
实施例4
在实施例1中,在蓝宝石基板上形成缓冲层后,通过ELO层由HVPE法,形成膜厚为100μm的GaN。其后,和实施例1同样,形成n型氮化物半导体层、活性层、p型氮化物半导体层,除去蓝宝石基板而在单体GaN基板上形成氮化物半导体激光元件。因为所述单体GaN基板具有开裂性,所以通过开裂得到端面膜的形成面。其后,作为端面膜将单结晶GaN在超临界氨中形成膜厚为1μm的放射端面。其他点和实施例1相同,形成谐振器端面,其他点和实施例1相同制作氮化物半导体激光元件。
制作的氮化物半导体激光元件,期待和实施例1同样效果。
实施例5
在实施例1上,在蓝宝石基板进行Ag涂层。其他点和实施例1相同制作氮化物半导体激光元件。
实施例6
在实施例1上,在最上层的p型接触层的表面上形成由晶格图形状的SiO2构成的保护膜,通过RIE进行蚀刻使谐振器端面及n型接触层的表面露出。接着,在p型接触层的表面上形成的所述SiO2掩膜其膜厚为0.5μm的状态下,将晶片配置在***内为超临界氨的反应容器(高压釜)内。其他点和实施例1同样制作氮化物半导体激光元件。
在由以上所述得到的激光元件上分别设置散热器,当激光发振时,和实施例1同样,期待阈值为2.0KA/cm2、100mW输出时发振波长405nm的连续发振的长寿命。
实施例7
在实施例1上,在基板上使用厚度为100μm的单结晶GaN基板。并且,为形成谐振器端面,通过开裂使端面露出,形成由SiO2构成的掩膜,其后,生长端面膜。其他点和实施例1同样制作氮化物半导体激光元件。
在由以上所述得到的激光元件上分别设置散热器,当激光发振时,和实施例1同样,期待阈值为2.0KA/cm2、100mW输出时发振波长405nm的连续发振的长寿命。
(产业上的可利用性)
如上所述,本发明的氮化物半导体激光元件,在n型氮化物半导体层和p型氮化物半导体层之间具有由含In的氮化物半导体构成的活性层的谐振器,并在所述激光元件相对向的谐振器端面的至少放射端面上,具有由与含In的氮化物半导体构成的活性层相比低温形成的由单结晶AlXGa1-XN(0≤X≤1)构成的端面膜,能够使放射端面的禁带宽度能量扩大。因此能够抑制其端面的光吸收,提高COD级别。由此,由本发明可能提供可靠性高寿命特性好,输出100mW以上的氮化物半导体激光元件。
Claims (18)
1.一种氮化物半导体激光元件,在n型氮化物半导体层和p型氮化物半导体层之间具有包括由含In的氮化物半导体构成的活性层的谐振器,其特征在于:
在所述激光元件的相对向的谐振器端面的至少放射端面上,以不损伤所述活性层的低温条件形成与活性层相比禁带宽度能量大的单结晶AlXGa1-XN构成的端面膜,其中,0≤X≤1。
2.如权利要求1所记载的氮化物半导体激光元件,其特征在于:所述端面膜的膜厚为50以上1μm以下。
3.如权利要求1中所记载的氮化物半导体激光元件,其特征在于:在所述谐振器端面上在超临界氨中形成由单结晶AlXGa1-XN构成的端面膜,其中,0≤X≤1。
4.如权利要求3中所记载的氮化物半导体激光元件,其特征在于:至少先掩蔽所述谐振器的p型接触层,再在超临界氨中将由单结晶AlXGa1-XN构成的端面膜形成在所述谐振器端面上,其中,0≤X≤1。
5.如权利要求3中记载的氮化物半导体激光元件,其特征在于:所述端面膜上至少含有一个IUPAC.1989中的族编号1的元素。
6.如权利要求1中所记载的氮化物半导体激光元件,其特征在于:所述活性层是至少含有一个InGaN阱层或者InAlGaN阱层的量子阱结构。
7.如权利要求1~6任一项中所记载的氮化物半导体激光元件,其特征在于:所述氮化物半导体激光元件形成在基板上,该基板从GaN基板、蓝宝石基板、尖晶石基板、ZnO基板、SiC基板、ELO生长基板、使表面具有凹凸的氮化物半导体生长的基板所构成的群中选择。
8.如权利要求1所记载的氮化物半导体激光元件,其特征在于:所述氮化物半导体激光元件被形成在GaN基板的C面、A面或M面上。
9.如权利要求1中所记载的氮化物半导体激光元件,其特征在于:所述氮化物半导体激光元件形成在GaN基板的C面上,所述端面膜是在M面或A面上生长的。
10.如权利要求1中所记载的氮化物半导体激光元件,其特征在于:所述氮化物半导体激光元件形成在GaN基板的A面上,谐振器放射面是M面,并在该M面上形成所述端面膜。
11.如权利要求1中所记载的氮化物半导体激光元件,其特征在于:所述氮化物半导体激光元件被形成在超临界氨中生长的GaN基板的M面上,谐振器放射面是A面,并在该A面上形成所述端面膜。
12.一种氮化物半导体激光元件的制造方法,在n型氮化物半导体层和p型氮化物半导体层之间具有包括由含In的氮化物半导体构成的活性层的谐振器,其特征在于,具有:
在所述激光元件上进行蚀刻或开裂处理、形成相对向的谐振器端面的第1工序、
在所述激光元件的相对向的谐振器端面的至少放射端面上形成由以不损伤活性层的低温形成的单结晶AlXGa1-XN构成的端面膜的第2工序,其中,0≤X≤1。
13.如权利要求12中所记载的制造方法,其特征在于:所述第2工序是在超临界氨中形成所述端面膜。
14.如权利要求13中所记载的氮化物半导体激光元件的制造方法,其特征在于:在所述第2工序中,至少在谐振器的p型接触层的上表面形成相对于超临界氨、溶解度与端面膜组成同等或低的掩膜,再形成所述端面膜。
15.如权利要求14所记载的氮化物半导体激光元件的制造方法,其特征在于:所述掩膜是从由氧化硅、氮化硅、氮化铝、钼、钨构成的群中选出的。
16.如权利要求12中所记载的氮化物半导体激光元件的制造方法,其特征在于:所述端面膜是在超临界氨中的成膜温度为600℃以下以单结晶形成的。
17.一种氮化物半导体激光元件,在n型氮化物半导体层和p型氮化物半导体层之间具有包括由含In的氮化物半导体构成的活性层的谐振器,其特征在于:
在所述激光元件的相对向的谐振器端面的至少放射端面上,以不损伤所述活性层的低温形成与所述活性层相比禁带宽度能量大的单结晶AlXGa1-XN构成的端面膜,该端面膜含有IUPAC.1989中族编号1的Li、K、Na或Cs元素中至少一个,其中,0≤X≤1。
18.如权利要求17中所记载的氮化物半导体激光元件,其特征在于:所述单结晶AlXGa1-XN端面膜是在超临界氨中形成的,其中,0≤X≤1。
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2002
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- 2002-10-28 US US10/493,594 patent/US7750355B2/en not_active Expired - Fee Related
- 2002-10-28 PL PL02374180A patent/PL374180A1/xx unknown
- 2002-10-28 WO PCT/IB2002/004441 patent/WO2003043150A1/ja active Application Filing
- 2002-10-28 JP JP2003539145A patent/JP4097601B2/ja not_active Expired - Fee Related
- 2002-10-28 EP EP02803072.4A patent/EP1453159B8/en not_active Expired - Lifetime
- 2002-10-28 JP JP2003544869A patent/JP4383172B2/ja not_active Expired - Fee Related
- 2002-10-28 US US10/493,746 patent/US7057211B2/en not_active Expired - Fee Related
- 2002-10-28 CN CNB028212312A patent/CN1263206C/zh not_active Expired - Fee Related
- 2002-10-28 EP EP02775396A patent/EP1453158A4/en not_active Withdrawn
- 2002-10-28 PL PL374184A patent/PL214287B1/pl unknown
- 2002-10-28 KR KR1020047006131A patent/KR100679377B1/ko active IP Right Grant
- 2002-10-28 WO PCT/JP2002/011136 patent/WO2003036771A1/ja active Application Filing
- 2002-10-28 KR KR1020047006130A patent/KR100679387B1/ko not_active IP Right Cessation
- 2002-10-28 TW TW091132111A patent/TWI263387B/zh not_active IP Right Cessation
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2008
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Also Published As
Publication number | Publication date |
---|---|
TWI263387B (en) | 2006-10-01 |
PL374180A1 (en) | 2005-10-03 |
PL374184A1 (en) | 2005-10-03 |
CN1575534A (zh) | 2005-02-02 |
PL214287B1 (pl) | 2013-07-31 |
US20040238810A1 (en) | 2004-12-02 |
US7057211B2 (en) | 2006-06-06 |
JPWO2003036771A1 (ja) | 2005-02-17 |
JP4383172B2 (ja) | 2009-12-16 |
EP1453159A4 (en) | 2007-10-03 |
EP1453158A1 (en) | 2004-09-01 |
EP1453159B8 (en) | 2017-12-13 |
WO2003043150A1 (fr) | 2003-05-22 |
US20040251471A1 (en) | 2004-12-16 |
TW200400675A (en) | 2004-01-01 |
KR20040049323A (ko) | 2004-06-11 |
CN1300901C (zh) | 2007-02-14 |
KR100679387B1 (ko) | 2007-02-05 |
JP4097601B2 (ja) | 2008-06-11 |
KR20040047968A (ko) | 2004-06-05 |
KR100679377B1 (ko) | 2007-02-05 |
US20080108162A1 (en) | 2008-05-08 |
US7750355B2 (en) | 2010-07-06 |
WO2003036771A1 (fr) | 2003-05-01 |
CN1575533A (zh) | 2005-02-02 |
US7935550B2 (en) | 2011-05-03 |
EP1453158A4 (en) | 2007-09-19 |
EP1453159B1 (en) | 2017-09-06 |
EP1453159A1 (en) | 2004-09-01 |
JPWO2003043150A1 (ja) | 2005-03-10 |
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