CN1187654C - 化学增强负型辐射敏感性树脂组合物 - Google Patents
化学增强负型辐射敏感性树脂组合物 Download PDFInfo
- Publication number
- CN1187654C CN1187654C CNB998020486A CN99802048A CN1187654C CN 1187654 C CN1187654 C CN 1187654C CN B998020486 A CNB998020486 A CN B998020486A CN 99802048 A CN99802048 A CN 99802048A CN 1187654 C CN1187654 C CN 1187654C
- Authority
- CN
- China
- Prior art keywords
- resin composition
- pattern
- radiation
- sensitive resin
- alkali soluble
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
酚醛清漆树脂/辐射敏感性试剂 | 苯胺改性的树脂A | 线图案的形式(未进行后烘烤) | 线图案的形式(进行后烘烤) | |
实施例1 | 100/15 | 5 | △ | ○ |
实施例2 | 100/15 | 10 | ○ | ○ |
实施例3 | 100/15 | 15 | ○ | ○ |
比较例1 | 100/15 | 0 | × | △ |
酚醛清漆树脂/辐射敏感性试剂 | 苯胺改性的树脂 | 未进行后烘烤 | 130℃ | 150℃ | 170℃ | |
实施例4 | 100/15 | 5 | ○ | ○ | ○ | × |
实施例5 | 100/15 | 10 | ○ | ○ | ○ | ○ |
实施例6 | 100/15 | 15 | ○ | ○ | ○ | ○ |
比较例2 | 100/15 | 0 | ○ | × | × | × |
线图案形成 | 抗蚀剂可脱除性 | |||||
蚀刻前*1 | 蚀刻后*2 | |||||
后烘烤 | 未进行 | 进行 | 未进行 | 进行 | 未进行 | 进行 |
实施例7 | ○ | ○ | △ | ○ | 通过溶解可脱除 | 通过溶解可脱除 |
实施例8 | ○ | ○ | △ | ○ | 通过溶解可脱除 | 通过溶解可脱除 |
比较例3 | × | △ | × | △ | 通过溶解不可脱除 | 通过溶解不可脱除 |
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317971/1998 | 1998-11-09 | ||
JP31797198A JP3974718B2 (ja) | 1998-11-09 | 1998-11-09 | 感放射線性樹脂組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1288529A CN1288529A (zh) | 2001-03-21 |
CN1187654C true CN1187654C (zh) | 2005-02-02 |
Family
ID=18094043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998020486A Expired - Fee Related CN1187654C (zh) | 1998-11-09 | 1999-11-01 | 化学增强负型辐射敏感性树脂组合物 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6342542B1 (zh) |
EP (1) | EP1046956A4 (zh) |
JP (1) | JP3974718B2 (zh) |
KR (1) | KR100656692B1 (zh) |
CN (1) | CN1187654C (zh) |
TW (1) | TW499625B (zh) |
WO (1) | WO2000028383A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW538088B (en) * | 2000-03-09 | 2003-06-21 | Shinetsu Chemical Co | Chemical amplification resist compositions |
JP3915402B2 (ja) * | 2000-12-05 | 2007-05-16 | Jsr株式会社 | 有機el表示素子の絶縁膜形成用感放射線性樹脂組成物、それから形成された絶縁膜、および有機el表示素子 |
JP3909552B2 (ja) * | 2000-07-27 | 2007-04-25 | Jsr株式会社 | 感放射線性樹脂組成物および有機el素子の絶縁膜 |
JP2002149308A (ja) | 2000-11-10 | 2002-05-24 | Nec Corp | 情報入力方法及び入力装置 |
TW594390B (en) * | 2001-05-21 | 2004-06-21 | Tokyo Ohka Kogyo Co Ltd | Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same |
TW200510934A (en) * | 2003-06-20 | 2005-03-16 | Zeon Corp | Radiation-sensitive resin composition and method for forming pattern using the composition |
KR20060048626A (ko) * | 2004-06-30 | 2006-05-18 | 스미또모 가가꾸 가부시끼가이샤 | 방사선 민감성 수지 조성물 |
TWI407255B (zh) | 2005-09-22 | 2013-09-01 | Hitachi Chem Dupont Microsys | 負片型感光性樹脂組成物、圖案形成方法以及電子零件 |
WO2007148384A1 (ja) * | 2006-06-20 | 2007-12-27 | Hitachi Chemical Dupont Microsystems Ltd. | ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品 |
WO2008111470A1 (ja) | 2007-03-12 | 2008-09-18 | Hitachi Chemical Dupont Microsystems, Ltd. | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JP5176872B2 (ja) | 2007-10-29 | 2013-04-03 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パタ−ンの製造方法及び電子部品 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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SU1068879A1 (ru) * | 1981-09-28 | 1984-01-23 | Организация П/Я А-7124 | Позитивный фоторезист |
JPS59147346A (ja) * | 1983-02-10 | 1984-08-23 | Nippon Soda Co Ltd | 酸現像ポリブタジエン系感光性樹脂 |
JPS62266537A (ja) * | 1986-05-14 | 1987-11-19 | Fuji Photo Film Co Ltd | マイクロカプセル及びそれを使用した感光性記録材料 |
US4877711A (en) * | 1986-05-19 | 1989-10-31 | Fuji Photo Film Co., Ltd. | Light-sensitive diazo photopolymerizable composition with polyurethane having carbon-carbon unsaturated and a carboxyl group |
JPH02132442A (ja) * | 1988-11-14 | 1990-05-21 | Hitachi Chem Co Ltd | 感光性樹脂組成物およびこれを用いたレジストパターンの製造法 |
JPH031143A (ja) * | 1989-05-30 | 1991-01-07 | Mitsubishi Petrochem Co Ltd | ポジ型フォトレジスト組成物 |
JPH04276755A (ja) * | 1991-03-05 | 1992-10-01 | Konica Corp | 感光性組成物 |
JP3016952B2 (ja) | 1992-04-28 | 2000-03-06 | クラリアント インターナショナル リミテッド | ネガ型フォトレジスト組成物 |
JPH06202329A (ja) * | 1992-12-29 | 1994-07-22 | Sony Corp | 感光性樹脂組成物およびこれを用いたパターン形成方法 |
JPH07209866A (ja) * | 1994-01-12 | 1995-08-11 | Fuji Photo Film Co Ltd | 光重合性組成物、それを用いたカラーフィルター及びその製造方法 |
JP3319642B2 (ja) * | 1994-01-12 | 2002-09-03 | 富士写真フイルム株式会社 | 光重合性組成物、それを用いたカラーフィルター及びその製造方法 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
US5683856A (en) * | 1994-10-18 | 1997-11-04 | Fuji Photo Film Co., Ltd. | Positive-working photosensitive composition |
JP3444562B2 (ja) * | 1995-03-28 | 2003-09-08 | 東京応化工業株式会社 | レジスト溶液の調製方法 |
US5814431A (en) * | 1996-01-10 | 1998-09-29 | Mitsubishi Chemical Corporation | Photosensitive composition and lithographic printing plate |
US5908730A (en) * | 1996-07-24 | 1999-06-01 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization photoresist composition |
JP3665166B2 (ja) * | 1996-07-24 | 2005-06-29 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
US5945517A (en) * | 1996-07-24 | 1999-08-31 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization photoresist composition |
JP3053072B2 (ja) * | 1996-09-10 | 2000-06-19 | 東京応化工業株式会社 | レジスト積層体及びそれを用いたパターン形成方法 |
JP3802179B2 (ja) * | 1997-02-07 | 2006-07-26 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
JPH1124271A (ja) * | 1997-06-30 | 1999-01-29 | Kurarianto Japan Kk | 高耐熱性放射線感応性レジスト組成物 |
US6174646B1 (en) * | 1997-10-21 | 2001-01-16 | Konica Corporation | Image forming method |
TW550268B (en) * | 1999-04-30 | 2003-09-01 | Sumitomo Chemical Co | A negative type resist composition |
-
1998
- 1998-11-09 JP JP31797198A patent/JP3974718B2/ja not_active Expired - Fee Related
-
1999
- 1999-11-01 EP EP99951186A patent/EP1046956A4/en not_active Withdrawn
- 1999-11-01 CN CNB998020486A patent/CN1187654C/zh not_active Expired - Fee Related
- 1999-11-01 US US09/600,052 patent/US6342542B1/en not_active Expired - Fee Related
- 1999-11-01 WO PCT/JP1999/006074 patent/WO2000028383A1/ja not_active Application Discontinuation
- 1999-11-01 KR KR1020007007490A patent/KR100656692B1/ko not_active IP Right Cessation
- 1999-11-06 TW TW088119435A patent/TW499625B/zh not_active IP Right Cessation
-
2001
- 2001-12-06 US US10/011,209 patent/US6716564B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20010033911A (ko) | 2001-04-25 |
KR100656692B1 (ko) | 2006-12-19 |
JP2000147764A (ja) | 2000-05-26 |
US20020115741A1 (en) | 2002-08-22 |
TW499625B (en) | 2002-08-21 |
EP1046956A1 (en) | 2000-10-25 |
CN1288529A (zh) | 2001-03-21 |
WO2000028383A1 (fr) | 2000-05-18 |
US6342542B1 (en) | 2002-01-29 |
EP1046956A4 (en) | 2002-02-13 |
JP3974718B2 (ja) | 2007-09-12 |
US6716564B2 (en) | 2004-04-06 |
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