CN111162357A - Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide - Google Patents
Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide Download PDFInfo
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- CN111162357A CN111162357A CN202010007416.1A CN202010007416A CN111162357A CN 111162357 A CN111162357 A CN 111162357A CN 202010007416 A CN202010007416 A CN 202010007416A CN 111162357 A CN111162357 A CN 111162357A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2088—Integrated in a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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Abstract
The invention discloses a multilayer dual-passband miniature filter based on a dual-layer substrate integrated waveguide, which comprises a filter medium substrate, and a filter top metal layer and a filter bottom metal layer which are respectively arranged on the upper surface and the lower surface of the filter medium substrate, wherein an input port is arranged on the filter top metal layer, T-shaped output ports are respectively arranged on the filter top metal layer and the filter bottom metal layer, and three cavity structures are respectively arranged on the filter top metal layer and the filter bottom metal layer. The invention has simple structure and is easy for industrial processing; firstly, a miniaturized SIW multi-layer dual-passband miniature filter is introduced, and the problem that the filter has a relatively large size is solved to a great extent. And secondly, the upper layer and the lower layer of the first cavity are coupled with the multimode structure, so that the gain based on the SIW filter is further increased, and a foundation is laid for improving the passband gain and the return loss of the dual-frequency SIW filter.
Description
Technical Field
The invention relates to a multilayer dual-passband miniature filter based on a dual-layer substrate integrated waveguide, which can be used in the technical field of millimeter waves.
Background
In high-frequency application, microstrip lines often fail due to over-small wavelength and over-high tolerance requirements, and the traditional metal waveguide is large in size and difficult to integrate with other microwave and millimeter wave circuit planes. The substrate integrated waveguide is a quasi-closed planar waveguide structure similar to a common metal waveguide, and has the planar integration characteristic similar to a microstrip transmission line, and the mutual interference of different parts in a circuit caused by radiation and a guided wave mode in the substrate is almost strictly eliminated; meanwhile, the planar microwave and millimeter wave circuit has good compatibility with active devices, is convenient for planar integration and miniaturization, has the advantages of small volume, light weight, simple assembly, easy processing, low cost and the like which are not possessed by the traditional waveguide, and can be used for designing a plurality of planar microwave and millimeter wave circuits with high Q values and low loss.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a multilayer dual-passband miniature filter based on a dual-layer substrate integrated waveguide.
The purpose of the invention is realized by the following technical scheme: the multilayer dual-passband miniature filter based on the double-layer substrate integrated waveguide comprises a filter medium substrate, a filter top metal layer and a filter bottom metal layer, wherein the filter top metal layer and the filter bottom metal layer are respectively arranged on the upper surface and the lower surface of the filter medium substrate, an input port is arranged on the filter top metal layer, T-shaped output ports are respectively arranged on the filter top metal layer and the filter bottom metal layer, and three cavity structures are respectively arranged on the filter top metal layer and the filter bottom metal layer.
Preferably, an input feed network is arranged on the top metal layer of the filter.
Preferably, the filter dielectric substrate comprises a filter upper dielectric substrate layer and a filter lower dielectric substrate layer, and a filter intermediate metal layer closely attached to the filter upper dielectric substrate layer and the filter lower dielectric substrate layer is further arranged between the filter upper dielectric substrate layer and the filter lower dielectric substrate layer.
Preferably, a rectangular gap is formed in a middle metal layer of the filter, the filter comprises six SIW cavity structures of an upper layer structure and a lower layer structure, the upper layer structure is provided with three SIW cavity structures, the lower layer structure is provided with three SIW cavity structures, each SIW cavity structure is formed by a top metal layer of the filter, a bottom metal layer of the filter and a filter medium substrate with metal through holes formed in the middle, a first cavity structure on the left side of the upper layer and a first cavity structure on the left side of the lower layer form a folded waveguide, the folded waveguide cavities are coupled through a coupling window, and a generated double mode is output through output ports of the top metal layer of the filter and the bottom metal layer of the filter.
Preferably, metal through holes are formed in the peripheries of the top metal layer of the filter, the bottom metal layer of the filter and the middle metal layer of the filter, and are used for forming a SIW cavity structure.
Preferably, a feed network is arranged on the top metal layer of the filter, and the top metal layer of the filter and the bottom metal layer of the filter use a T-shaped connection channel as an output port to provide a pole for each channel filter.
Preferably, the feed network is arranged in the middle of the top metal layer of the filter, and the T-shaped output port is arranged in the middle of the top metal layer of the filter and the bottom metal layer of the filter.
Preferably, the filter top metal layer and the filter bottom metal layer are both metal plates, and the filter middle metal layer is an ideal electric conductor.
Preferably, the filter top metal layer and the filter bottom metal layer are made of copper.
Preferably, the multilayer dual-passband miniature filter adopts a Rogers 5880 dielectric plate, the dielectric constant is 2.2, and the single-layer thickness is 0.508mm
Compared with the prior art, the invention adopting the technical scheme has the following technical effects: the invention has simple structure and is easy for industrial processing; firstly, a miniaturized SIW multi-layer dual-passband miniature filter is introduced, and the problem that the filter has a relatively large size is solved to a great extent. And secondly, the upper layer and the lower layer of the first cavity are coupled with the multimode structure, so that the gain based on the SIW filter is further increased, and a foundation is laid for improving the passband gain and the return loss of the dual-frequency SIW filter.
Drawings
FIG. 1 is a schematic structural diagram of a multi-layer dual-passband miniature filter based on a dual-layer substrate integrated waveguide according to the present invention.
FIG. 2 is a schematic diagram of the upper layer structure of the multilayer dual-passband miniature filter based on the dual-layer substrate integrated waveguide.
FIG. 3 is a schematic diagram of the structure of the middle metal layer of the multi-layer dual-passband miniature filter based on the dual-layer substrate integrated waveguide.
FIG. 4 is a schematic diagram of the lower layer structure of the multilayer dual-passband miniature filter based on the dual-layer substrate integrated waveguide.
FIG. 5 is a waveform diagram of S parameter simulation of the multi-layer dual-passband miniature filter based on the dual-layer substrate integrated waveguide.
Detailed Description
Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. The embodiments are merely exemplary for applying the technical solutions of the present invention, and any technical solution formed by replacing or converting the equivalent thereof falls within the scope of the present invention claimed.
The invention discloses a multilayer dual-passband miniature filter based on a dual-layer substrate integrated waveguide, which comprises a filter dielectric substrate 6, and a filter top metal layer 4 and a filter bottom metal layer 2 which are respectively arranged on the upper surface and the lower surface of the filter dielectric substrate, as shown in figures 1, 2, 3 and 4. An input port is arranged on the top metal layer 4 of the filter, T-shaped output ports 5 are respectively arranged on the top metal layer 4 of the filter and the bottom metal layer 2 of the filter, and three cavity structures are respectively arranged on the top metal layer 4 of the filter and the bottom metal layer 2 of the filter.
The filter medium substrate 6 comprises a filter upper layer medium substrate layer and a filter lower layer medium substrate layer, and a filter middle metal layer 3 which is tightly attached to the filter upper layer medium substrate layer and the filter lower layer medium substrate layer is further arranged between the filter upper layer medium substrate layer and the filter lower layer medium substrate layer.
The filter is characterized in that a rectangular gap 8 is formed in the middle metal layer 3 of the filter, the filter comprises six SIW cavity structures of an upper layer structure and a lower layer structure, the upper layer structure is provided with three SIW cavity structures, the lower layer structure is provided with three SIW cavity structures, each SIW cavity structure is formed by a filter top metal layer 4, a filter bottom metal layer 2 and a filter medium substrate with metal through holes in the middle, the first cavity structure on the left side of the upper layer and the first cavity structure on the left side of the lower layer form a folded waveguide, the folded waveguide cavities are coupled through a coupling window 7, a generated double mode is output through output ports of the filter top metal layer 4 and the filter bottom metal layer 2, and the length of the coupling window between the cavities on the same layer is determined according to frequency requirements.
Metal through holes 1 are carved on the peripheries of the filter top metal layer 4, the filter bottom metal layer 2 and the filter middle metal layer 3 and are used for forming an SIW cavity structure, the distance among the metal through holes is determined according to needs, and the SIW cavity filter is rectangular. The metal through hole rows are arranged on four sides of the cavity on the SIW cavity filter, two sides of the coupling window and two sides of the microstrip. The top metal layer 4 and the bottom metal layer 2 of the filter are both metal plates, and the middle metal layer 3 of the filter is an ideal electric conductor (pec). The filter top metal layer 4 and the filter bottom metal layer 2 are made of metal copper.
An input feed network is arranged on the filter top metal layer 4, a feed network is arranged on the filter top metal layer 4, and the filter top metal layer 4 and the filter bottom metal layer 2 use T-shaped connecting channels as output ports to provide a pole for each channel filter. The feed network is arranged in the middle of the top metal layer 4 of the filter, and the T-shaped output port is arranged in the middle of the top metal layer 4 of the filter and the bottom metal layer 2 of the filter. The input and output ports are formed by converting microstrip lines into coplanar waveguides, wherein the length and the width of a slot of the coplanar waveguides are determined according to a feed line of 50 omega. Compared with the traditional filter, the first cavity uses the folded waveguide, and the generated double modes are output through the upper layer and the lower layer of output ports. The invention has simple structure, easy processing and good performance, and lays a foundation for researching high-performance and miniaturized filters in the future.
The multilayer dual-passband miniature filter adopts a Rogers 5880 dielectric plate, the dielectric constant is 2.2, and the single-layer thickness is 0.508 mm. The impedance of one microstrip line is 50 ohms, the width of the feeder line is obtained according to the medium, and the microstrip line serves as the input end of the double-frequency SIW filter. The substrate integrated waveguide is a novel microwave transmission line form, and realizes the field propagation of the waveguide on upper and lower medium substrates by utilizing a metal through hole;
as shown in fig. 3, the filter is composed of an upper layer and a lower layer of double cavities, the middle metal layer is used as an isolation layer of the upper layer and the lower layer, each cavity is composed of metal through holes around the dielectric substrate and the upper and lower metal layers, and signal transmission is realized between the cavities on the same layer through a coupling window. As shown in fig. 4, a wave port is on the upper metal layer of the SIW cavity, that is, one microstrip line is on the upper metal layer of the first dielectric slab, two equal slots are respectively disposed on two sides of the microstrip line, the wave port is formed by converting the microstrip line into the coplanar waveguide, metal through holes are disposed on two sides of the equal slot, and the same metal through holes are disposed on the other three sides, wherein the distances between the two through holes are equal. And a T-shaped output port is arranged in the centers of the upper surface and the lower surface of the dual-passband miniature filter, so that the power division of signals is realized.
FIG. 5 is a S parameter simulation oscillogram of a multi-layer dual-passband miniature filter based on a substrate integrated waveguide, wherein the abscissa represents frequency and the ordinate represents S11And S21The parameters of the first working frequency band and the second working frequency band are respectively 11.6-12GHz and 13.3-13.7GHz, the return loss is respectively more than 14dB and 19dB, the insertion loss is less than-1.2 dB, and the working performance is good.
According to the technical scheme, firstly, signals are transmitted in a cavity by folding multi-mode coupling and mode channels according to a coupling window, and because the second three cavities of the upper layer and the lower layer are not provided with signal attenuation and loss caused by a coupling mechanism, the debugging cost is saved, the process manufacturing complexity is reduced, the size is reduced, and the return loss of the filter is improved. The invention has simple structure, easy processing and good performance, and lays a foundation for researching high-gain and miniaturized filters in the future.
The invention has various embodiments, and all technical solutions formed by adopting equivalent transformation or equivalent transformation are within the protection scope of the invention.
Claims (10)
1. Multilayer dual-passband miniature filter based on double-layer substrate integrated waveguide is characterized in that: comprises a filter medium substrate (6), a filter top metal layer (4) and a filter bottom metal layer (2) which are respectively arranged on the upper surface and the lower surface of the filter medium substrate,
an input port is arranged on the filter top metal layer (4), T-shaped output ports (5) are respectively arranged on the filter top metal layer (4) and the filter bottom metal layer (2), and three cavity structures are respectively arranged on the filter top metal layer (4) and the filter bottom metal layer (2).
2. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 1 wherein: and an input feed network is arranged on the top metal layer (4) of the filter.
3. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 1 wherein: the filter medium substrate (6) comprises a filter upper layer medium substrate layer and a filter lower layer medium substrate layer, and a filter middle metal layer (3) tightly attached to the filter upper layer medium substrate layer and the filter lower layer medium substrate layer is further arranged between the filter upper layer medium substrate layer and the filter lower layer medium substrate layer.
4. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 3 wherein: the filter is characterized in that a rectangular gap (8) is formed in a middle metal layer (3) of the filter, the filter comprises six SIW cavity structures of an upper layer structure and a lower layer structure, the upper layer structure is provided with three SIW cavity structures, the lower layer structure is provided with three SIW cavity structures, each SIW cavity structure is formed by a top metal layer (4) of the filter, a bottom metal layer (2) of the filter and a filter medium substrate with metal through holes in the middle, a first cavity structure on the left side of the upper layer and a first cavity structure on the left side of the lower layer form a folded waveguide, the folded waveguide cavities are coupled through a coupling window (7), and a generated double mode is output through output ports of the top metal layer (4) of the filter and the bottom metal layer (2) of.
5. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 3 wherein: and metal through holes (1) are formed in the peripheries of the filter top metal layer (4), the filter bottom metal layer (2) and the filter middle metal layer (3) and are used for forming an SIW cavity structure.
6. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 1 wherein: the filter top metal layer (4) is provided with a feed network, and the filter top metal layer (4) and the filter bottom metal layer (2) use T-shaped connecting channels as output ports to provide a pole for each channel filter.
7. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 6 wherein: the feed network is arranged in the middle of the top metal layer (4) of the filter, and the T-shaped output port is arranged in the middle of the top metal layer (4) of the filter and the bottom metal layer (2) of the filter.
8. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 3 wherein: the filter top metal layer (4) and the filter bottom metal layer (2) are both metal plates, and the filter middle metal layer (3) is an ideal electric conductor.
9. The dual-layer dual-passband minifilter based on a dual-layer substrate integrated waveguide as claimed in claim 8, wherein: the filter top metal layer (4) and the filter bottom metal layer (2) are made of metal copper.
10. The multilayer dual passband minifilter based on a dual layer substrate integrated waveguide as claimed in claim 1 wherein: the multilayer dual-passband miniature filter adopts a Rogers 5880 dielectric plate, the dielectric constant is 2.2, and the single-layer thickness is 0.508 mm.
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Cited By (1)
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| CN116207464A (en) * | 2023-04-23 | 2023-06-02 | 南通至晟微电子技术有限公司 | Dual-mode substrate integrated waveguide resonator |
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