CN114335957B - Power combining/distributing device - Google Patents
Power combining/distributing device Download PDFInfo
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- CN114335957B CN114335957B CN202210101141.7A CN202210101141A CN114335957B CN 114335957 B CN114335957 B CN 114335957B CN 202210101141 A CN202210101141 A CN 202210101141A CN 114335957 B CN114335957 B CN 114335957B
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Abstract
The application discloses a power combiner/divider, includes: a waveguide cavity (1) formed between a first waveguide wall (2) and a second waveguide wall (3) having a first port (11), a second port (12) and a third port (13); the microstrip probe circuit board (4) is arranged at the first port (11) and the second port (12); a first waveguide ridge (5) and a second waveguide ridge (6) respectively provided at opposite sides in the third port (13); a T-shaped waveguide ridge (7) arranged in the waveguide cavity (1) and having a first end, a second end and a third end corresponding to the first port (11), the second port (12) and the third port (13), respectively; the first end and the second end are respectively connected with the corresponding microstrip probe circuit board (4), and the third end is respectively connected with the first waveguide ridge (5) and the second waveguide ridge (6). The method and the device can realize double-ridge waveguide output, and solve the problems of overlarge size, low efficiency and insufficient bandwidth of the traditional power synthesis network.
Description
Technical Field
The application belongs to the technical field of power distribution and synthesis in a radio frequency microwave circuit, and particularly relates to a power synthesis/distributor.
Background
In a microwave and millimeter wave broadband communication system, a double-ridge waveguide and a microstrip probe circuit board are increasingly widely applied, and particularly in a high-power amplifier system, the purpose of synthesizing and outputting high power is achieved by adopting a mode that a plurality of power amplifier tubes work together. These high power application requirements present new challenges to the corresponding power distribution and synthesis technology, so that the miniaturized, high-efficiency, wide-bandwidth multi-channel distribution and synthesis device becomes a key component in the wide-band power amplifier and communication system, and the performance index directly determines the quality of the whole system. However, the conventional high-band broadband synthesis technology usually adopts a planar microstrip transmission line structure, and as the frequency rises, the size and the loss of the planar microstrip transmission line become larger and larger, and particularly in the millimeter wave band, the requirements of miniaturization and high efficiency are difficult to meet.
Disclosure of Invention
The power synthesis/distribution device at least aims to solve one of the technical problems in the prior art, and the power synthesis/distribution device is beneficial to reducing the structural size of the power synthesis/distribution device, improving the service performance and reducing the processing difficulty.
An embodiment of the present application provides a power combiner/divider, including:
a waveguide cavity formed between the first waveguide wall and the second waveguide wall, having a first port, a second port, and a third port;
the microstrip probe circuit board is arranged at the first port and the second port;
a first waveguide ridge and a second waveguide ridge respectively disposed on opposite sides of the third port;
the T-shaped waveguide ridge is arranged in the waveguide cavity and is provided with a first end, a second end and a third end which respectively correspond to the first port, the second port and the third port; the first end and the second end are respectively connected with corresponding microstrip probe circuit boards, and the third end is respectively connected with the first waveguide ridge and the second waveguide ridge.
Optionally, the T-shaped waveguide ridge is formed by splicing a first ridge and a second ridge, and the splicing surface of the first ridge and the second ridge is step-shaped.
Optionally, the splicing surfaces of the first ridge and the second ridge include a first splicing surface and a second splicing surface; the first splicing surface is connected with the second splicing surface, the second splicing surface is parallel to the extension direction of the third end, and the third end is divided into an upper end surface and a lower end surface; the first waveguide ridge is connected to the upper end surface, and the second waveguide ridge is connected to the lower end surface.
Optionally, the height of the first splicing surface gradually decreases along the extending direction of the third end.
Optionally, the first ridge and the first waveguide ridge are disposed on the first waveguide wall; the second ridge and the second waveguide ridge are arranged on the second waveguide wall.
Optionally, the microstrip probe circuit board includes a microstrip probe, a transition structure and a coupling antenna, which are connected in sequence; the microstrip probe is further connected in a corresponding port of the waveguide cavity, and the coupling antenna is further connected on a corresponding end of the T-shaped waveguide ridge.
Optionally, the microstrip probe, the transition structure and the coupling antenna are arranged in a step shape along the width direction of the microstrip probe circuit board, and the width of the microstrip probe is the smallest.
Optionally, the microstrip probe circuit board further includes a dielectric substrate having a front surface and a back surface; the microstrip probe, the transition structure and the coupling antenna are arranged on the front surface of the dielectric substrate; and the back surface of the dielectric substrate is also provided with a metal layer for fixing the microstrip probe circuit board.
Optionally, the dielectric substrate is a microwave substrate.
Optionally, impedance transformation steps are disposed in the first port, the second port, and the third port.
The technical scheme of the application has the following beneficial technical effects:
1. the microstrip probe circuit board of the embodiment of the application can be suitable for a synthesis/power distribution network with a plurality of microstrip probes, such as a waveguide-microstrip single probe, a waveguide-microstrip double probe, a waveguide-microstrip three probe and the like, wherein the microstrip probe circuit board is simple in form, small in size, wide in coverage frequency band and integrally processed, the structure size of a power synthesis/distribution device is reduced, and the use performance is improved.
2. The embodiment of the application adopts the mode of matching the single ridge waveguide with the H-surface ridge waveguide, the single ridge waveguide is connected with the microstrip probe in a single surface, so that power synthesis and standard input and output of the double ridge waveguide can be realized, and compared with the mode of connecting the microstrip coupling antenna on the upper surface and the lower surface of the ridge of the double ridge waveguide, the thickness of the power synthesis/distributor is further reduced, and the processing difficulty is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a power combiner according to an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a first waveguide wall in an embodiment of the present application;
FIG. 3 is a schematic structural diagram of a microstrip probe circuit board according to an embodiment of the present application;
fig. 4 is a transmission loss index of a power combiner according to an embodiment of the present application;
fig. 5 is a port standing wave indicator of a power combiner according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of another power combiner according to an embodiment of the present application;
fig. 7 is a transmission loss index of another power combiner according to an embodiment of the present application;
fig. 8 is a port standing wave index of another power combiner according to an embodiment of the present application.
In the figure, 1, a waveguide cavity; 11. a first port; 12. a second port; 13. a third port; 2. a first waveguide wall; 3. a second waveguide wall; 4. a microstrip probe circuit board; 41. a microstrip probe; 42. a transition structure; 43. a coupled antenna; 44. a dielectric substrate; 45. a metal layer; 5. a first waveguide ridge; 6. a second waveguide ridge; 7. a T-shaped waveguide ridge; 71. a first ridge; 711. an upper end surface; 72. a second ridge; 721. a lower end face; 73. a first splicing surface; 74. a second splicing surface; 8. an impedance transformation step.
Detailed Description
In the related art, a double-ridge waveguide power combiner scheme is generally to arrange an inner layer between two outer layers, and form a double-ridge waveguide power combiner by using waveguide ridges on the inner layer and waveguide cavities between the outer layer and the outer layer, and the double-ridge waveguide power combiner has more stacked components and relatively larger size compared with a single-ridge waveguide power combiner.
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below with reference to the accompanying drawings in combination with the detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present application. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present application.
In the drawings, a schematic diagram of a layer structure according to an embodiment of the application is shown. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity. The shapes of the various regions, layers and their relative sizes, positional relationships are shown in the drawings as examples only, and in practice deviations due to manufacturing tolerances or technical limitations are possible, and a person skilled in the art may additionally design regions/layers with different shapes, sizes, relative positions according to the actual needs.
It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
In the description of the present application, it should be noted that the terms "first", "second", and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1-2, embodiments of the present application provide a power combiner/divider, including:
a waveguide cavity 1 formed between the first waveguide wall 2 and the second waveguide wall 3, having a first port 11, a second port 12 and a third port 13;
the microstrip probe circuit board 4 is arranged at the first port 11 and the second port 12;
a first waveguide ridge 5 and a second waveguide ridge 6 respectively provided at opposite sides in the third port 13;
a T-shaped waveguide ridge 7 arranged in the waveguide cavity 1 and having a first end, a second end and a third end corresponding to the first port 11, the second port 12 and the third port 13, respectively; the first end and the second end are respectively connected with the corresponding microstrip probe circuit board 4, and the third end is respectively connected with the first waveguide ridge 5 and the second waveguide ridge 6.
In this embodiment, the waveguide cavity 1 may be formed on the first waveguide wall 2 or the second waveguide wall 3, for example, a groove is formed on the first waveguide wall 2, and the second waveguide wall 3 is fastened as a cover plate on the first waveguide wall 2 to form the waveguide cavity 1. The waveguide cavity 1 may also include two parts formed on the first waveguide wall 2 and the second waveguide wall 3, respectively, for example, a first groove is formed on the first waveguide wall 2, a second groove is formed on the second waveguide wall 3, and the first groove and the second groove are fastened to form the waveguide cavity 1.
In this embodiment, when the microstrip probe circuit board is used for signal synthesis, the first port 11, the second port 12, and the corresponding microstrip probe circuit board 4 form an input end of the signal synthesizer, the waveguide cavity 1 and the T-shaped waveguide ridge 7 form a single-ridge waveguide, and the third port 13, the first waveguide ridge 5, and the second waveguide ridge 6 form an H-plane double-ridge waveguide, where the H-plane double-ridge waveguide serves as a standard double-ridge waveguide output port. The signal synthesis process specifically comprises the following steps: the microstrip probe circuit board 4 of the first port 11 and the second port 12 can convert two paths of signals transmitted by the microstrip lines into signals transmitted in the single ridge waveguide, and after the signals are combined in a T-shaped manner through the single ridge waveguide, the standard double ridge waveguide is converted and output through the H-surface ridge waveguide, so that the synthesis of multiple paths of signals is realized. Conversely, the distribution of multiple signals may also be implemented.
Specifically, the microstrip probe circuit board 4 according to the embodiment of the present application may be applied to a synthesis/power distribution network having a plurality of microstrip probes 41, such as a waveguide-microstrip single probe, a waveguide-microstrip dual probe, and a waveguide-microstrip triple probe, and the microstrip probe circuit board 4 has a simple form, a small size, a wide coverage frequency band, and is integrally formed with the microstrip probes 41, which is beneficial to reducing the structural size of the power synthesis/distribution unit and improving the usability. In addition, the embodiment of the application adopts a mode of matching the single-ridge waveguide with the H-face double-ridge waveguide, the single-ridge waveguide is connected with the microstrip probe in a single face to realize power synthesis and standard input and output of the double-ridge waveguide, and compared with the mode of connecting the coupling antenna on the upper face and the lower face of the ridge of the double-ridge waveguide at present, the thickness of the power synthesis/distributor is further reduced, and the processing difficulty is reduced.
In some embodiments, the T-shaped waveguide ridge 7 is formed by splicing a first ridge 71 and a second ridge 72, and the splicing surface of the first ridge 71 and the second ridge 72 is stepped. Specifically, the splicing surface is located at a position, close to the third end, of the T-shaped waveguide ridge 7, and the step-shaped splicing surfaces of the first ridge 71 and the second ridge 72 can be used for conversion matching of a single ridge waveguide and a double ridge waveguide, so that signal loss is reduced, and signal synthesis efficiency is improved.
In some embodiments, the first ridge 71 and the second ridge 72 have one step or multiple steps between them. Illustratively, the splicing surfaces of the first ridge 71 and the second ridge 72 include a first splicing surface 73 and a second splicing surface 74; the first splicing surface 73 is connected with the second splicing surface 74, the second splicing surface 74 is parallel to the extending direction of the third end, and the third end is divided into an upper end surface 711 and a lower end surface 721; the first waveguide ridge 5 is connected to the upper end surface 711, and the second waveguide ridge 6 is connected to the lower end surface 721.
In some embodiments, the height of the first splicing surface 73 gradually decreases along the extension direction of the third end. Specifically, the first splicing surface 73 is a slope surface, and the slope surface may be replaced by a plurality of steps.
In some embodiments, the first ridge 71 and the first waveguide ridge 5 are provided on the first waveguide wall 2; the second ridge 72 and the second waveguide ridge 6 are provided on the second waveguide wall 3.
In some embodiments, the microstrip probe circuit board 4 includes a microstrip probe 41, a transition structure 42, and a coupling antenna 43 connected in sequence; the microstrip probe 41 is further connected to a corresponding port of the waveguide cavity 1, and the coupling antenna 43 is further connected to a corresponding end of the T-shaped waveguide ridge 7. The transition structure 42 may be a section of whole or two or more sections of matching branches to ensure good matching between the microstrip probe 41 and the single-ridge waveguide, and the transition structure 42 may be optimally adjusted according to different types of waveguides.
In some embodiments, the microstrip probe 41, the transition structure 42 and the coupling antenna 43 are arranged in a step shape along the width direction of the microstrip probe circuit board 4, and the width of the microstrip probe 41 is the smallest.
In some embodiments, the microstrip probe circuit board 4 further comprises a dielectric substrate 44 having a front side and a back side; the microstrip probe 41, the transition structure 42 and the coupling antenna 43 are arranged on the front surface of the dielectric substrate 44; the back of the dielectric substrate 44 is further provided with a metal layer 45 for fixing the microstrip probe circuit board 4.
In some embodiments, the microstrip probe 41 employs a 50 Ω microstrip probe 41. The transmission power of the microstrip probe 41 is related to the medium of the microstrip probe 41, the width of the microstrip probe 41, and the thickness of the microstrip probe 41, and the specific specification may be selected according to the power transmission requirement and the specification and model of the microstrip board of the board manufacturer, which is not specifically limited in this embodiment.
In some embodiments, the dielectric substrate 44 is a microwave substrate. The microwave substrate includes a hard substrate or a soft substrate, and the soft substrate is preferably used as the dielectric substrate 44 in this embodiment.
In some embodiments, impedance transformation steps 8 are provided in the first port 11, the second port 12 and the third port 13. Specifically, the impedance transformation step 8 may be a plurality of stages, for example, the impedance transformation step 8 may be a four-stage stepped structure. Wherein, the multi-stage step transformation enables the signal to be coupled into the single-ridge waveguide from the microstrip probe circuit board 4 to achieve good matching, for example, the impedance transformation step 8 at the first port 11 and the second port 12 is arranged at the lower part of the coupling antenna 43, and the signal energy is coupled into the single-ridge waveguide from the coupling antenna 43 of the circuit board to be transmitted through multiple reflections in such space step. The multi-stage step can also be used in cooperation with the step of the single-ridge waveguide, for example, the impedance transformation step 8 in the third port 13 can be used in cooperation with the stepped splicing surfaces of the first ridge 71 and the second ridge 72, so that the conversion matching between the single-ridge waveguide and the double-ridge waveguide is realized. In practical use, the influence of the fringe capacitance can be compensated by changing the distance between the impedance steps. Suitable dimensioning allows the signal to be switched between these two transmission modes with little loss.
In order to verify the reliability of the power combiner/divider according to the embodiment of the present application, the index of the power combiner/divider is verified through two embodiments as follows.
Example one
As shown in fig. 1, a power combiner with two signal inputs includes two signal input ports and one signal output port, a first end and a second end of a T-shaped waveguide ridge 7 are respectively connected to one signal input port through a microstrip probe circuit board 4, a third end of the T-shaped waveguide ridge 7 is respectively connected to a first waveguide ridge 5 and a second waveguide ridge 6 in the signal output port, and both the signal input port and the signal output port are provided with an impedance transformation step 8.
The first waveguide wall 2 and the second waveguide wall 3 are made of metal materials such as copper and aluminum, and the surfaces of the first waveguide wall and the second waveguide wall are plated with silver or gold. The first and second waveguide ridges 5 and 6 and the third port 13 constitute a standard-sized WRD500 double-ridge waveguide port. The impedance transformation step 8 is used for the conversion matching of the micro-strip probe circuit board 4 and the single-ridge waveguide, and the impedance transformation step 8 is also used for the conversion matching of the single-ridge waveguide and the double-ridge waveguide.
As shown in fig. 4-5, when the power combiner with two signal inputs is used for signal synthesis, the working frequency band is within the range of 6-18GHz, the port standing wave is less than 1.1, and the transmission loss is less than 0.1dB, so that better performance indexes are achieved.
Example two
As shown in fig. 6, a four-path signal input power combiner includes four signal input ports and a signal output port, the ridge of the single-ridge waveguide is formed by connecting three T-shaped waveguide ridges 7 to form four input ends and an output end, the four input ends are respectively connected to one signal input port through a microstrip probe circuit board 4, the output end is respectively connected to a first waveguide ridge 5 and a second waveguide ridge 6 in the signal output port, and both the signal input port and the signal output port are provided with impedance transformation steps 8.
As shown in fig. 7-8, when the four-channel signal input power combiner is used for signal synthesis, the working frequency band is in the range of 6-18GHz, the standing wave at the port is less than 1.15, and the transmission loss is less than 0.1dB, so that better performance indexes are achieved.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. A power combiner/divider, comprising:
a waveguide cavity (1) formed between a first waveguide wall (2) and a second waveguide wall (3), having a first port (11), a second port (12) and a third port (13);
the microstrip probe circuit board (4) is arranged at the first port (11) and the second port (12);
a first waveguide ridge (5) and a second waveguide ridge (6) respectively provided at opposite sides in the third port (13);
a T-shaped waveguide ridge (7) arranged in the waveguide cavity (1) and having a first end, a second end and a third end corresponding to the first port (11), the second port (12) and the third port (13), respectively; the first end and the second end are respectively connected with corresponding microstrip probe circuit boards (4), and the third end is respectively connected with the first waveguide ridge (5) and the second waveguide ridge (6);
the T-shaped waveguide ridge (7) is formed by splicing a first ridge (71) and a second ridge (72), and the splicing surfaces of the first ridge (71) and the second ridge (72) are step-shaped.
2. A power combiner/divider according to claim 1, characterized in that the splicing faces of the first ridge (71) and the second ridge (72) comprise a first splicing face (73) and a second splicing face (74); the first splicing surface (73) is connected with the second splicing surface (74), the second splicing surface (74) is parallel to the extending direction of the third end, and the third end is divided into an upper end surface (711) and a lower end surface (721); the first waveguide ridge (5) is connected to the upper end surface (711), and the second waveguide ridge (6) is connected to the lower end surface (721).
3. A power combiner/divider according to claim 2, characterized in that the height of the first splicing face (73) decreases gradually along the extension of the third end.
4. A power combining/splitting device according to claim 2, wherein said first ridge (71) and said first waveguide ridge (5) are provided on said first waveguide wall (2); the second ridge (72) and the second waveguide ridge (6) are provided on the second waveguide wall (3).
5. The power combiner/divider according to claim 1, characterized in that the microstrip probe circuit board (4) comprises a microstrip probe (41), a transition structure (42) and a coupling antenna (43) connected in sequence; the microstrip probe (41) is further connected into a corresponding port of the waveguide cavity (1), and the coupling antenna (43) is further connected to a corresponding end of the T-shaped waveguide ridge (7).
6. The power combiner/divider according to claim 5, wherein the microstrip probe (41), the transition structure (42) and the coupling antenna (43) are arranged in a step shape along a width direction of the microstrip probe circuit board (4), and a width of the microstrip probe (41) is the smallest.
7. The power combiner/divider according to claim 5, characterized in that the microstrip probe circuit board (4) further comprises a dielectric substrate (44) having a front side and a back side; the microstrip probe (41), the transition structure (42) and the coupling antenna (43) are arranged on the front surface of the dielectric substrate (44); and a metal layer (45) is arranged on the back surface of the dielectric substrate (44) and used for fixing the micro-strip probe circuit board (4).
8. The power combiner/divider of claim 7, wherein the dielectric substrate (44) is a microwave substrate.
9. A power combiner/divider according to claim 1, characterized in that impedance transformation steps (8) are provided in the first port (11), the second port (12) and the third port (13).
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| CN202210101141.7A CN114335957B (en) | 2022-01-27 | 2022-01-27 | Power combining/distributing device |
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| CN202210101141.7A CN114335957B (en) | 2022-01-27 | 2022-01-27 | Power combining/distributing device |
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| CN114335957B true CN114335957B (en) | 2023-02-21 |
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| EP4391217A1 (en) * | 2022-12-21 | 2024-06-26 | HJWAVE Co., Ltd. | Waveguide antenna |
| CN116387789B (en) * | 2023-06-05 | 2023-08-15 | 南京纳特通信电子有限公司 | Broadband high-power multi-path distribution synthesizer |
| CN116632486B (en) * | 2023-07-05 | 2024-03-15 | 西南科技大学 | 2-way single-ridge-to-double-ridge waveguide power distribution synthesis structure with 180-degree port phase difference |
| CN116780147A (en) * | 2023-08-21 | 2023-09-19 | 南京纳特通信电子有限公司 | Microwave high-frequency power synthesis cavity |
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