CN116207464A - Dual-mode substrate integrated waveguide resonator - Google Patents
Dual-mode substrate integrated waveguide resonator Download PDFInfo
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- CN116207464A CN116207464A CN202310442378.6A CN202310442378A CN116207464A CN 116207464 A CN116207464 A CN 116207464A CN 202310442378 A CN202310442378 A CN 202310442378A CN 116207464 A CN116207464 A CN 116207464A
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- 239000002184 metal Substances 0.000 claims abstract description 59
- 230000009977 dual effect Effects 0.000 claims abstract description 24
- 230000005684 electric field Effects 0.000 abstract description 35
- 238000009826 distribution Methods 0.000 abstract description 20
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 238000001465 metallisation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 3
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- 230000005284 excitation Effects 0.000 description 1
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a dual-mode substrate integrated waveguide resonator which comprises a metal top layer, a dielectric substrate and a metal ground, wherein the metal top layer is arranged on the top surface of the dielectric substrate, the metal ground is arranged on the bottom side of the dielectric substrate, the metal top layer and the metal ground are connected with each other through a plurality of transverse metallized via belts penetrating through the dielectric substrate and longitudinal metallized via belts, the transverse metallized via belts are formed by a plurality of transverse metallized via belts, the longitudinal metallized via belts are formed by a plurality of longitudinal metallized via belts, the transverse metallized via belts are positioned on the broadside edge of the metal top layer, the longitudinal metallized via belts are positioned between the transverse metallized via belts on two sides, and the longitudinal metallized via belts positioned in the middle of the metal top layer are provided with non-porous zones. The invention can generate dual modes with opposite horizontal electric field distribution, independently regulate and control the mode frequencies to enable the dual modes to be adjacent to each other, and improve the regulation and control capability of the mode frequencies.
Description
Technical Field
The invention relates to the technical field of microwave communication, in particular to a dual-mode substrate integrated waveguide resonator.
Background
With the rapid development of communication technology, the rate requirement of a wireless system is higher and higher, and the conventional narrowband communication system cannot adapt to the actual demands of application scenes such as artificial intelligence, virtual reality and the like due to the problems of small transmission capacity, low transmission rate and the like, so that a broadband wireless system is increasingly receiving attention. Microwave resonators are one of the key components of a wireless system, so the characteristics of the microwave resonators will affect the performance of a broadband wireless system. In the traditional wireless system, a single-mode microwave resonator is usually adopted, and when the system needs broadband operation, methods of reducing the quality factor, increasing the number of the single-mode resonators and the like are often adopted, so that the problems of high system complexity, high cost and the like are caused. The dual-mode resonator has two modes which can be applied by the system, can generate broadband work by a single resonator under proper excitation condition, is beneficial to the reduction of complexity and size of a broadband wireless system and reduces the cost, and is also characterized by being convenient for integration based on a printed circuit board.
Currently, dual mode resonators based on printed circuit boards are mainly divided into two categories: microstrip resonators and substrate integrated waveguide resonators. The microstrip resonator can realize a dual-mode resonator when a branch, a disturbance structure and the like are added, but most of the microstrip resonator is a dual mode formed by an odd mode and an even mode, the use scene is limited, and the dual-mode resonator formed by the odd mode, the odd mode and the even mode generally has the problems of overlarge frequency interval, poor independent mode frequency regulation capability and the like. The substrate integrated waveguide resonator has smaller loss compared with the microstrip resonator and can work at higher frequency. The existing substrate integrated waveguide resonator can select a dual mode to work through a proper feed structure, but the dual mode is difficult to have opposite horizontal electric field distribution, and has the problems that the mode frequency interval is too large, the mode frequency interval is difficult to regulate and control to adjacent positions and the like.
For the problems in the related art, no effective solution has been proposed at present.
Disclosure of Invention
Aiming at the problems in the related art, the invention provides a dual-mode substrate integrated waveguide resonator which can generate dual modes with opposite horizontal electric field distribution, independently regulate and control mode frequencies to enable the dual modes to be adjacent to each other, and improve the regulation and control capability of the mode frequencies.
The technical scheme of the invention is realized as follows:
the utility model provides a dual-mode substrate integrated waveguide resonator, includes metal top layer, dielectric substrate and metal ground, the metal top layer set up in the top surface of dielectric substrate, the metal ground set up in the bottom side of dielectric substrate, the metal top layer with connect each other through a plurality of run through the horizontal metallization via area and the vertical metallization via area of dielectric substrate between the metal ground, the horizontal metallization via area is formed by a plurality of horizontal arranged metallization via, the vertical metallization via area is formed by a plurality of vertical arranged metallization via, and a plurality of horizontal metallization via area is located the broadside edge of metal top layer, a plurality of vertical metallization via area are located between the horizontal metallization via area of both sides, and the vertical metallization via area that is located the middle part of metal top layer has the hole area.
The metal vias are arranged in a transverse mode to form two rows of transverse metal via belts, and the two rows of transverse metal via belts are respectively located at the broadside edges of the metal top layer.
In addition, the plurality of longitudinally arranged metallized via holes form two rows of longitudinally metallized via holes, and the two rows of longitudinally metallized via holes are symmetrically arranged between the two rows of transversely metallized via holes.
In addition, the distance between the two rows of longitudinal metallized via strips and the side edge of the metal top layer is one quarter of the length of the metal top layer.
In addition, the hole diameter of the metallized via of the longitudinal metallized via tape is 2-3 times that of the metallized via of the transverse metallized via tape;
optionally, the length of the metal top layer is 0.6-0.8 wavelength, and the width of the metal top layer is 0.3-0.4 wavelength.
Optionally, the hole diameter of the metallized via of the lateral metallized via strap is 0.01-0.03 wavelength, and the hole pitch of the metallized via of the lateral metallized via strap is twice the hole diameter.
Optionally, the pitch of the metallized vias of the longitudinal metallized via tape is 0.02-0.03 wavelength.
Optionally, the length of the non-porous zone is 0.07 to 0.1 wavelength.
The beneficial effects are that: the invention can generate TM 01 、TM 11 And TM 21 Three working modes and can be independently regulated and controlled by two rows of metallized Kong Duimo type with a non-porous zone in the middle, so that TM with opposite horizontal electric field distribution 01 Mode and TM 21 The dies being mutually connected adjacent. The hole diameters of the two rows of metallized through holes can improve the degree of freedom of mode frequency regulation of the resonator, namely the invention has opposite horizontal electric field distribution, can independently regulate the mode frequencies, and can improve the regulation capability of the mode frequencies, wherein the two modes are adjacent to each other.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a dual mode substrate integrated waveguide resonator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a resonator without metallized vias in accordance with an embodiment of the invention 01 A schematic of the electric field distribution of the mode;
FIG. 3 is a schematic diagram of a resonator without metallized vias in accordance with an embodiment of the invention 11 A schematic of the electric field distribution of the mode;
FIG. 4 is a schematic illustration of a resonator without metallized vias in accordance with an embodiment of the invention 21 A schematic of the electric field distribution of the mode;
FIG. 5 is a schematic diagram of a dual mode substrate integrated waveguide resonator TM according to an embodiment of the invention 01 A schematic of the electric field distribution of the mode;
FIG. 6 is a TM of a dual mode substrate integrated waveguide resonator according to an embodiment of the present invention 11 A schematic of the electric field distribution of the mode;
FIG. 7 is a schematic diagram of a dual mode substrate integrated waveguide resonator TM according to an embodiment of the invention 21 Mode of operationThe electric field distribution is simple;
FIG. 8 is a graph comparing mode frequency versus hole spacing for a dual mode substrate integrated waveguide resonator according to an embodiment of the present invention;
FIG. 9 is a graph comparing the mode frequency of a dual mode substrate integrated waveguide resonator as a function of the number of holes of a longitudinal metallized via strip in accordance with an embodiment of the present invention;
fig. 10 is a graph comparing mode frequency versus hole diameter for a dual mode substrate integrated waveguide resonator according to an embodiment of the present invention.
In the figure:
1. a metal top layer; 2. a dielectric substrate; 3. a metal large stratum; 4. laterally metallizing the via strap; 5. longitudinally metallizing the via tape; 6. and metallizing the via hole.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, it will be apparent that the described embodiments are only some, but not all, embodiments of the invention. Based on the embodiments of the present invention, all other embodiments available to one of ordinary skill in the art, all falling within the scope of the present invention.
According to an embodiment of the invention, a dual mode substrate integrated waveguide resonator is provided.
As shown in fig. 1, a dual-mode substrate integrated waveguide resonator according to an embodiment of the present invention includes a metal top layer 1, a dielectric substrate 2, and a metal large stratum 3, where the metal top layer 1 is disposed on a top surface of the dielectric substrate 2, the metal large stratum 3 is disposed on a bottom side of the dielectric substrate 2, the metal top layer 1 and the metal large stratum 3 are connected with each other by a plurality of transverse metallized via strips 4 penetrating through the dielectric substrate and a plurality of longitudinal metallized via strips 5, the transverse metallized via strips 4 are formed by a plurality of transverse metallized via strips 6, the longitudinal metallized via strips 5 are formed by a plurality of longitudinal metallized via strips 6, the plurality of transverse metallized via strips 6 form two rows of transverse metallized via strips 4, the two rows of transverse metallized via strips 4 are respectively located at a wide edge of the metal top layer 1, the plurality of longitudinal metallized via strips 6 form two rows of longitudinal metallized via strips 5, the two rows of longitudinal metallized via strips 5 are symmetrically disposed between the two rows of transverse metallized via strips 4, the longitudinal metallized via strips 5 are located at a distance of one of the top layer 1 between the two metal top layers 1 and the metal top layer 1.
In specific application, the hole diameter of the metallized via holes 6 of the longitudinal metallized via hole belt 5 is 2-3 times of the hole diameter of the metallized via holes 6 of the transverse metallized via hole belt 4, the length of the metal top layer 1 is 0.6-0.8 wavelength, the width of the metal top layer 1 is 0.3-0.4 wavelength, the hole diameter of the metallized via holes 6 of the transverse metallized via hole belt 4 is 0.01-0.03 wavelength, the hole spacing of the metallized via holes 6 of the transverse metallized via hole belt 4 is twice the hole diameter, the hole spacing of the metallized via holes 6 of the longitudinal metallized via hole belt 5 is 0.02-0.03 wavelength, and the length of the non-hole belt is 0.07-0.1 wavelength.
In specific use, the two rows of transverse metallized via belts 4 are equivalent to electric walls, and the right sides of the metal top layer 1 are equivalent to magnetic walls. When the longitudinal metallized via strips 5 are not added, the resonator produces three resonant modes (TM) in sequence due to the combined action of the metal top layer 1, the metal massive layer 3 and the metallized vias 6 01 Mould (TM) 11 Mode and TM 21 Mode) whose electric field distribution diagram is shown in fig. 2-4. In TM 01 In the mould, the internal electric field of the metal top layer 1 does not have a zero electric field area and has the same amplitude in the x direction and is in half-wave distribution in the y direction, and a pair of horizontal electric field components with opposite directions and equal amplitudes are generated on the left side and the right side; in TM 11 In the mould, the center of the metal top layer 1 is a zero electric field area, the internal electric field is half-wave distributed in the x and y directions, a pair of horizontal electric field components with the same direction and the same amplitude are generated on the left and right sides, and the amplitude of the electric field at a quarter length position from the left and right sides of the metal top layer 1 is smaller than TM 01 The magnitude of the electric field of the mode at this location; in TM 21 In the mould, the internal electric field of the metal top layer 1 is in two halves in the x directionThe wave distribution is half-wave distribution in the y direction, and reaches the area of zero electric field at the quarter length position of the left side and the right side of the metal top layer 1, and a pair of horizontal electric field components with opposite directions and equal amplitude are generated on the left side and the right side.
When the longitudinal metallized via strips 5 are added and positioned one quarter of the way to the left and right sides of the metal top layer 1, the three modes will be affected differently and the mode electric field distribution diagrams are shown in fig. 5-7. Due to the original TM 21 The die itself is a zero field region at the via, while the original TM 01 Mold and original TM 11 The mode is here a non-zero electric field region, and the original TM 01 The electric field strength of the mode is greater than TM 11 The electric field strength of the die, and thus the longitudinal metallized via strap 5 pair TM 21 The mode operating frequency is least affected and has the least effect on TM 01 Mold and method for manufacturing the same TM (TM) 11 The operating frequency of the mode is relatively strongly affected.
When the pitch or number of holes of the longitudinal metallized via tape 5 is changed, the original TM is used 21 The mode is a zero electric field region at the via hole, so the resonance frequency is not affected, and the original TM 01 Mold and original TM 11 The mode is a non-zero electric field area at the via hole, and the original TM 01 The electric field strength of the mode is greater than that of the original TM 11 Electric field strength of mode, therefore, TM 01 Mode and TM 11 The operating frequency of the mode will change and TM 01 The frequency change of the mode is greater than TM 11 The frequency of the mode changes. When the hole diameter of the longitudinal metallized via tape 5 changes, the via is greater than TM 21 TM when the zero field region is mode 21 The mode will also change, but TM 01 The frequency of the mode still varies the most.
Thus, the bulk resonator eventually attains Two Modes (TM) having opposite horizontal electric field distribution characteristics 01 Mode and TM 21 Die) and the pitch and number of holes of the longitudinal metallized via tape 5 can be varied to independently regulate TM 01 The operating frequency of the mode is such that TM 01 Mode and TM 21 The modes are adjacent to each other and the hole diameter of the longitudinal metallized via strip 5 can also be varied to enhance the mode frequency tuning capability of the resonator.
Fig. 8-10 are modes of the resonatorThe frequency varies with the longitudinal metallized via tape 5. As can be seen from FIGS. 8 and 9, as the hole spacing or number of holes increases, the TM 21 The frequency of the mode remains unchanged while TM 01 Mold and method for manufacturing the same TM (TM) 11 The frequency of the mode will rise and TM 01 Frequency rise speed ratio TM of mode 11 Molding quickly; as can be seen from FIG. 10, as the hole diameter increases, the frequencies of all three modes rise and TM 01 The frequency of the mode rises at the fastest rate. From FIGS. 8-10, it can be seen that when the pitch of the holes of the longitudinal metallized via tape 5 is greater than 0.045 wavelength, the number of holes per column of metallized vias is greater than 4 and the hole diameter is greater than 0.03 wavelength, TM 01 Frequency of mode will be greater than TM 11 The frequencies of the modes, the overall resonator will achieve adjacent dual modes with opposite horizontal electric field distributions. Thus, the resonator can independently regulate the TM 01 Mode frequency is TM 01 Mode and TM 21 The modes are adjacent to each other and enhance the regulation of the mode frequency.
It can be seen that by means of the above-described solution of the invention, the invention is capable of producing a TM 01 、TM 11 And TM 21 Three working modes and can be independently regulated and controlled by two rows of metallized Kong Duimo type with a non-porous zone in the middle, so that TM with opposite horizontal electric field distribution 01 Mode and TM 21 The dies are adjacent to each other. The hole diameters of the two rows of metallized through holes can improve the degree of freedom of mode frequency regulation of the resonator, namely the invention has opposite horizontal electric field distribution, can independently regulate the mode frequencies, and can improve the regulation capability of the mode frequencies, wherein the two modes are adjacent to each other.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (9)
1. The utility model provides a dual-mode substrate integrated waveguide resonator, its characterized in that includes metal top layer (1), dielectric substrate (2) and metal big stratum (3), metal top layer (1) set up in the top surface of dielectric substrate (2), metal big stratum (3) set up in the bottom side of dielectric substrate (2), metal top layer (1) with between metal big stratum (3) through a plurality of run through transverse metallized via area (4) and vertical metallized via area (5) interconnect of dielectric substrate, transverse metallized via area (4) are formed by a plurality of transverse arrangement's metallized via (6), vertical metallized via area (5) are formed by a plurality of vertical arrangement's metallized via (6), and a plurality of transverse metallized via area (4) are located the broadside edge of metal top layer (1), a plurality of vertical metallized via area (5) are located between the transverse metallized via area (4) of both sides, and vertical metallized via area (5) that are located metal top layer (1) middle part has the pore-free.
2. A dual mode substrate integrated waveguide resonator according to claim 1, characterized in that the plurality of laterally arranged metallized via holes (6) form two rows of laterally metallized via strips (4), and that the two rows of laterally metallized via strips (4) are located at the broadside edges of the metal top layer (1), respectively.
3. A dual mode substrate integrated waveguide resonator according to claim 2, characterized in that the plurality of longitudinally arranged metallized via holes (6) form two columns of longitudinally metallized via strips (5), the two columns of longitudinally metallized via strips (5) being symmetrically arranged between the two rows of laterally metallized via strips (4).
4. A dual mode substrate integrated waveguide resonator according to claim 3, characterized in that the distance between the two rows of longitudinal metallized via strips (5) and the side edges of the metal top layer (1) is one quarter of the length of the metal top layer (1).
5. A dual mode substrate integrated waveguide resonator according to claim 1, characterized in that the hole diameter of the metallized via (6) of the longitudinal metallized via strip (5) is 2-3 times the hole diameter of the metallized via (6) of the lateral metallized via strip (4).
6. The dual-mode substrate integrated waveguide resonator of claim 1, wherein the length of the metal top layer (1) is 0.6-0.8 wavelength, and the width of the metal top layer (1) is 0.3-0.4 wavelength.
7. A dual mode substrate integrated waveguide resonator according to claim 1, characterized in that the hole diameter of the metallized vias (6) of the lateral metallized via stripe (4) is 0.01-0.03 wavelength and the hole pitch of the metallized vias (6) of the lateral metallized via stripe (4) is twice the hole diameter.
8. The dual mode substrate integrated waveguide resonator of claim 7, wherein the pitch of the holes of the metallized vias (6) of the longitudinal metallized via strip (5) is 0.02-0.03 wavelength.
9. The dual mode substrate integrated waveguide resonator of claim 1, wherein the length of the non-porous region is between 0.07 and 0.1 wavelength.
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| CN202310442378.6A CN116207464B (en) | 2023-04-23 | 2023-04-23 | Dual-mode substrate integrated waveguide resonator |
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| CN202310442378.6A CN116207464B (en) | 2023-04-23 | 2023-04-23 | Dual-mode substrate integrated waveguide resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201178125Y (en) * | 2008-01-11 | 2009-01-07 | 东南大学 | A dual-mode ellipse response filter of substrate integration waveguide |
| CN105932379A (en) * | 2016-06-17 | 2016-09-07 | 中国电子科技集团公司第十研究所 | SIW (substrate integrated waveguide) filter with ports on different planes |
| CN108777354A (en) * | 2018-05-25 | 2018-11-09 | 南京理工大学 | A kind of micro-strip paster antenna based on the load of SIW resonant cavities |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
| US20220223990A1 (en) * | 2021-01-08 | 2022-07-14 | Kang Zhou | Compact substrate-integrated waveguide filtering crossover devices and systems |
-
2023
- 2023-04-23 CN CN202310442378.6A patent/CN116207464B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201178125Y (en) * | 2008-01-11 | 2009-01-07 | 东南大学 | A dual-mode ellipse response filter of substrate integration waveguide |
| CN105932379A (en) * | 2016-06-17 | 2016-09-07 | 中国电子科技集团公司第十研究所 | SIW (substrate integrated waveguide) filter with ports on different planes |
| CN108777354A (en) * | 2018-05-25 | 2018-11-09 | 南京理工大学 | A kind of micro-strip paster antenna based on the load of SIW resonant cavities |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
| US20220223990A1 (en) * | 2021-01-08 | 2022-07-14 | Kang Zhou | Compact substrate-integrated waveguide filtering crossover devices and systems |
Non-Patent Citations (3)
| Title |
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| L. SILVESTRI, A. GHIOTTO, C. TOMASSONI, M. BOZZI AND L. PERREGRINI: "《Partially Air-Filled Substrate Integrated Waveguide Filters With Full Control of Transmission Zeros》", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》, vol. 67, no. 9 * |
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